JP6775804B2 - シリコン系誘電体上の六方晶窒化ホウ素の直接形成 - Google Patents

シリコン系誘電体上の六方晶窒化ホウ素の直接形成 Download PDF

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JP6775804B2
JP6775804B2 JP2018555266A JP2018555266A JP6775804B2 JP 6775804 B2 JP6775804 B2 JP 6775804B2 JP 2018555266 A JP2018555266 A JP 2018555266A JP 2018555266 A JP2018555266 A JP 2018555266A JP 6775804 B2 JP6775804 B2 JP 6775804B2
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layer
metal film
single crystal
semiconductor wafer
crystal semiconductor
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JP2019522348A5 (enExample
JP2019522348A (ja
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ビカス・ベリー
サンジャイ・ベフラ
フォン・グエン
マイケル・アール・シークリスト
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GlobalWafers Co Ltd
University of Illinois System
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GlobalWafers Co Ltd
University of Illinois System
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
JP2018555266A 2016-05-12 2017-04-28 シリコン系誘電体上の六方晶窒化ホウ素の直接形成 Active JP6775804B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662335149P 2016-05-12 2016-05-12
US62/335,149 2016-05-12
PCT/US2017/030124 WO2017196559A1 (en) 2016-05-12 2017-04-28 Direct formation of hexagonal boron nitride on silicon based dielectrics

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JP2020163797A Division JP7066127B2 (ja) 2016-05-12 2020-09-29 シリコン系誘電体上の六方晶窒化ホウ素の直接形成

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JP2019522348A JP2019522348A (ja) 2019-08-08
JP2019522348A5 JP2019522348A5 (enExample) 2020-05-07
JP6775804B2 true JP6775804B2 (ja) 2020-10-28

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JP2020163797A Active JP7066127B2 (ja) 2016-05-12 2020-09-29 シリコン系誘電体上の六方晶窒化ホウ素の直接形成
JP2022066022A Active JP7283707B2 (ja) 2016-05-12 2022-04-13 シリコン系誘電体上の六方晶窒化ホウ素の直接形成

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JP2022066022A Active JP7283707B2 (ja) 2016-05-12 2022-04-13 シリコン系誘電体上の六方晶窒化ホウ素の直接形成

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US (3) US10658472B2 (enExample)
EP (3) EP4131338A3 (enExample)
JP (3) JP6775804B2 (enExample)
KR (3) KR102419924B1 (enExample)
CN (1) CN109791876B (enExample)
ES (1) ES2940083T3 (enExample)
WO (1) WO2017196559A1 (enExample)

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US11332369B2 (en) * 2018-03-22 2022-05-17 BNNano, Inc. Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
CN109180026A (zh) * 2018-07-26 2019-01-11 吉林大学 利用化学气相沉积方法制备蓝宝石光纤包层的方法
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JP7253943B2 (ja) * 2019-03-15 2023-04-07 東京エレクトロン株式会社 六方晶窒化ホウ素膜を形成する方法および装置
US11158807B2 (en) * 2019-10-18 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
CN110676384B (zh) * 2019-11-05 2024-11-26 南京理工大学 一种氮化硼封装的二维有机-无机异质结及其制备方法
CN113023718B (zh) * 2019-12-24 2022-11-01 北京大学 一种洁净转移制备高质量悬空二维材料支撑膜的方法
CN111243942A (zh) * 2020-01-19 2020-06-05 吉林大学 利用过渡金属或合金作为缓冲层提高六方氮化硼结晶质量的方法
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CN115004343B (zh) * 2020-06-28 2025-02-28 深圳清华大学研究院 带有微结构的原子级平整器件及其制备方法
KR20220033997A (ko) * 2020-09-10 2022-03-17 에이에스엠 아이피 홀딩 비.브이. 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치
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