KR102317740B1 - 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 - Google Patents

실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 Download PDF

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KR102317740B1
KR102317740B1 KR1020207028017A KR20207028017A KR102317740B1 KR 102317740 B1 KR102317740 B1 KR 102317740B1 KR 1020207028017 A KR1020207028017 A KR 1020207028017A KR 20207028017 A KR20207028017 A KR 20207028017A KR 102317740 B1 KR102317740 B1 KR 102317740B1
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layer
graphene
metal film
boron nitride
silicon
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KR20200117048A (ko
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비카스 베리
산제이 비후라
퐁 응우옌
마이클 알. 시크리스트
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글로벌웨이퍼스 씨오., 엘티디.
더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이
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KR1020207028017A 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성 Active KR102317740B1 (ko)

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US201662335149P 2016-05-12 2016-05-12
US62/335,149 2016-05-12
PCT/US2017/030124 WO2017196559A1 (en) 2016-05-12 2017-04-28 Direct formation of hexagonal boron nitride on silicon based dielectrics
KR1020187032597A KR102163616B1 (ko) 2016-05-12 2017-04-28 실리콘 기반 유전체 상에서의 6각형 붕소 질화물의 직접적 형성

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US (3) US10658472B2 (enExample)
EP (3) EP3455874B1 (enExample)
JP (3) JP6775804B2 (enExample)
KR (3) KR102317740B1 (enExample)
CN (1) CN109791876B (enExample)
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US10490673B2 (en) * 2018-03-02 2019-11-26 Texas Instruments Incorporated Integration of graphene and boron nitride hetero-structure device
US11332369B2 (en) 2018-03-22 2022-05-17 BNNano, Inc. Compositions and aggregates comprising boron nitride nanotube structures, and methods of making
CN109180026A (zh) * 2018-07-26 2019-01-11 吉林大学 利用化学气相沉积方法制备蓝宝石光纤包层的方法
US11339499B2 (en) * 2018-10-08 2022-05-24 Korea Institute Of Science And Technology Method for epitaxial growth of single crystalline heterogeneous 2D materials and stacked structure
JP7253943B2 (ja) * 2019-03-15 2023-04-07 東京エレクトロン株式会社 六方晶窒化ホウ素膜を形成する方法および装置
US11158807B2 (en) * 2019-10-18 2021-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Field effect transistor and method of manufacturing the same
CN110676384B (zh) * 2019-11-05 2024-11-26 南京理工大学 一种氮化硼封装的二维有机-无机异质结及其制备方法
CN113023718B (zh) * 2019-12-24 2022-11-01 北京大学 一种洁净转移制备高质量悬空二维材料支撑膜的方法
CN111243942A (zh) * 2020-01-19 2020-06-05 吉林大学 利用过渡金属或合金作为缓冲层提高六方氮化硼结晶质量的方法
US11075273B1 (en) 2020-03-04 2021-07-27 International Business Machines Corporation Nanosheet electrostatic discharge structure
KR102314020B1 (ko) * 2020-05-06 2021-10-15 아주대학교산학협력단 육방정계 질화붕소/그래핀 2차원 복합 소재 제조방법
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