ES2940083T3 - Formación directa de nitruro de boro hexagonal sobre dieléctricos basados en silicio - Google Patents

Formación directa de nitruro de boro hexagonal sobre dieléctricos basados en silicio Download PDF

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Publication number
ES2940083T3
ES2940083T3 ES17722645T ES17722645T ES2940083T3 ES 2940083 T3 ES2940083 T3 ES 2940083T3 ES 17722645 T ES17722645 T ES 17722645T ES 17722645 T ES17722645 T ES 17722645T ES 2940083 T3 ES2940083 T3 ES 2940083T3
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Prior art keywords
graphene
layer
silicon
semiconductor wafer
nitride layer
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English (en)
Spanish (es)
Inventor
Vikas Berry
Sanjay Behura
Phong Nguyen
Michael R Seacrist
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GlobalWafers Co Ltd
University of Illinois at Urbana Champaign
University of Illinois System
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GlobalWafers Co Ltd
University of Illinois at Urbana Champaign
University of Illinois System
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
ES17722645T 2016-05-12 2017-04-28 Formación directa de nitruro de boro hexagonal sobre dieléctricos basados en silicio Active ES2940083T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662335149P 2016-05-12 2016-05-12
PCT/US2017/030124 WO2017196559A1 (en) 2016-05-12 2017-04-28 Direct formation of hexagonal boron nitride on silicon based dielectrics

Publications (1)

Publication Number Publication Date
ES2940083T3 true ES2940083T3 (es) 2023-05-03

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ES17722645T Active ES2940083T3 (es) 2016-05-12 2017-04-28 Formación directa de nitruro de boro hexagonal sobre dieléctricos basados en silicio

Country Status (7)

Country Link
US (3) US10658472B2 (enExample)
EP (3) EP4131338A3 (enExample)
JP (3) JP6775804B2 (enExample)
KR (3) KR102419924B1 (enExample)
CN (1) CN109791876B (enExample)
ES (1) ES2940083T3 (enExample)
WO (1) WO2017196559A1 (enExample)

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CN113023718B (zh) * 2019-12-24 2022-11-01 北京大学 一种洁净转移制备高质量悬空二维材料支撑膜的方法
CN111243942A (zh) * 2020-01-19 2020-06-05 吉林大学 利用过渡金属或合金作为缓冲层提高六方氮化硼结晶质量的方法
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