CN111799153A - 非晶薄膜形成方法 - Google Patents
非晶薄膜形成方法 Download PDFInfo
- Publication number
- CN111799153A CN111799153A CN202010704396.3A CN202010704396A CN111799153A CN 111799153 A CN111799153 A CN 111799153A CN 202010704396 A CN202010704396 A CN 202010704396A CN 111799153 A CN111799153 A CN 111799153A
- Authority
- CN
- China
- Prior art keywords
- thin film
- forming
- amorphous
- amorphous thin
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 59
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052796 boron Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 22
- 229910000077 silane Inorganic materials 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 7
- 239000007789 gas Substances 0.000 description 34
- 230000003746 surface roughness Effects 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 101000735417 Homo sapiens Protein PAPPAS Proteins 0.000 description 1
- 102100034919 Protein PAPPAS Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/38—Borides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/42—Silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
本发明涉及形成非晶薄膜的方法。根据本发明的一实施例,形成非晶薄膜的方法包括:在基底上流过氨基硅烷系气体,从而在上述基底表面形成种子层的工序;在上述种子层供给包括含硼气体的第一源气体而形成掺杂有硼的第一非晶薄膜的工序;以及在上述第一非晶薄膜供给包括含硼气体的第二源气体而形成掺杂有硼的第二非晶薄膜的工序。
Description
本申请是申请号201680023468.X(申请日:2016年05月09日,发明名称:非晶薄膜形成方法)的发明专利申请的分案申请。
技术领域
本发明涉及形成非晶薄膜的方法,更详细地涉及形成掺杂硼的第一非晶薄膜之后形成掺杂硼的第二非晶薄膜来最小化第二非晶薄膜的表面粗糙度的成膜方法。
背景技术
在低温(小于300度)蒸镀非晶薄膜(amorphous thin film)的情况下,若掺杂硼,则表面粗糙度急剧下降。特别是,若将非晶薄膜的目标厚度设为则难以形成表面粗糙度(RMS)0.3nm以下的非晶薄膜。因此,需要可以改善这个温度的技术。
发明内容
技术问题
本发明的目的在于,提供一种可以最小化非晶薄膜的表面粗糙度的成膜方法。
本发明的其它目的根据下面的详细说明和附图会变得更加清楚。
问题解决方案
根据本发明的一实施例,形成非晶薄膜的方法包括:在基底上流过氨基硅烷系气体,从而在上述基底表面形成种子层的工序;及在上述种子层上形成既定厚度的非晶薄膜的工序;其中,形成上述非晶薄膜的工序包括:在上述种子层上形成第一非晶薄膜的工序,该第一非晶薄膜掺杂硼并具有第一厚度;在上述第一非晶薄膜上形成第二非晶薄膜的工序,该第二非晶薄膜掺杂硼并具有第二厚度;使用于形成上述第一非晶薄膜的工序的第一源气体包括含硼气体及硅烷系气体且供给到上述种子层;使用于形成上述第二非晶薄膜的工序的第二源气体包括含硼气体且与上述第一源气体不同,而且被供给到上述第一非晶薄膜。
上述硼类气体可以是B2H6。
包含在上述第一源气体的硅烷系气体可以是SiH4。
包含在上述第二源气体的硅烷系气体是Si2H6,上述第二非晶薄膜是硅薄膜,形成上述第一非晶薄膜的工序在300度进行,形成上述第二非晶薄膜的工序可以在400度进行。
包含在上述第二源气体的硅烷系气体中SiH4和Si2H6以4:1的比率混合,上述第二非晶薄膜可以是硅薄膜。
上述第二源气体还包含硅烷系气体及含锗气体,包含在上述第二源气体的硅烷系气体和含锗气体可以按1:2混合。
包含在上述第二源气体的硅烷系气体是SiH4,上述第二非晶薄膜是硅薄膜,上述第一源气体包含15000sccm的N2,上述第二源气体可以包含5000sccm的N2,3000sccm的H2。
上述第二源气体包含含锗气体,上述第二非晶薄膜可以是锗薄膜。
发明效果
根据本发明的一实施例,形成第一薄膜之后形成第二薄膜,从而可以最小化第二薄膜的表面粗糙度。
附图说明
图1是表示随着工序条件的变化改善的非晶薄膜的表面粗糙度的图表。
图2是表示基于厚度增加的非晶薄膜的表面粗糙度的图表。
图3是根据本发明的第一至第四实施例改善的非晶薄膜的表面粗糙度的图表。
具体实施方式
下面,参考所附的图1于图3更详细地说明本发明的优选的实施例。本发明的实施例可以变形为各种形态,不应解释为本发明的范围由下面说明的实施例限定。本实施例是为了向本发明所属技术领域的普通技术人员更详细地说明本发明而提供的。因此,为了强调更清楚的说明,附图中出现的各要素的形状可能被夸张。
图1是表示随着工序条件的变化改善的非晶薄膜的表面粗糙度的图表。首先,在硅基板上形成基底,基底可以是氧化硅膜或氮化硅膜。在基底上使氨基硅烷系气体(例如,DIPAS)流过基板的表面来形成种子层,然后将非晶薄膜形成在种子层上。
另一方面,乙硼烷(B2H6)是含硼气体的例子,不同于下面的工序条件,可以用其它含硼气体代替。
[表1]
如图1所示,随着将工序条件从基准工序(300℃Ref)变化,可知表面粗糙度得到改善。若观察图1,改善效果如下。
第一个是将非晶薄膜的工序条件中的工序温度从300度上升到400度的情况,该情况下表面粗糙度从0.614改善为0.457。
第二个是将硅烷系气体从甲硅烷SiH4变更为甲硅烷(SiH4)和乙硅烷(Si2H6)的混合气体的情况,甲硅烷和乙硅烷按4:1的比率混合。该情况下表面粗糙度从0.651改善为0.484。
第三个是供给GeH4的情况,该情况下表面粗糙度从0.561改善为0.401。
第四个是供给氢气的情况,该情况下表面粗糙度从0.534改善为0.433。
但是,非晶薄膜随着厚度增加,表面粗糙度如下变化。若将表2用图表表示,则如图2。
[表2]
即,如表2及图2所示,在关于非晶薄膜的表面粗糙度,基准工序与其它工序相比最优秀,但是基准工序的情况下,随着非晶薄膜的厚度增加,表面粗糙度急剧增加。相反,在其它工序的情况下,表面粗糙度的基于非晶薄膜的厚度的变化微小。
若考虑这些,利用基准工序形成第一非晶薄膜之后,通过各工序条件形成第二非晶薄膜,从而如图3所示可以大幅改善第二非晶薄膜的表面粗糙度。
另一方面,如表1的第五个项目记载,基准工序的硅烷系气体(甲硅烷或乙硅烷)可以用含锗气体代替,该情况下非晶薄膜不是硅膜而是锗膜。在前面说明的第一非晶薄膜上形成锗薄膜的第二非晶薄膜时,可以确认第二非晶薄膜的表面粗糙度同样被改善。
通过优选的实施例详细说明了本发明,但是也可以是与此不同方式的实施例。因此,下面记载的权利要求的技术思想和范围不受优选实施例的限制。
工业可利用性
本发明可以应用于多样形态的半导体制造设备及制造方法。
Claims (6)
1.一种非晶薄膜的形成方法,其特征在于,包括:
在基底上流过氨基硅烷系气体,从而在上述基底表面形成种子层的工序;及
在上述种子层上形成既定厚度的非晶薄膜的工序;
其中,上述的形成上述非晶薄膜的工序包括:
使用于形成上述第一非晶硅薄膜的工序的第一源气体包括含硼气体及硅烷系气体且供给到上述种子层;
使用于形成上述第二非晶硅薄膜的工序的第二源气体包括含硼气体和硅烷系气体,且上述第二源气体与上述第一源气体不同,而且上述第二源气体被供给到上述第一非晶硅薄膜,
其中,上述第一源气体中包括15000sccm的N2,上述第二源气体中包括5000sccm的N2和3000sccm的H2。
2.如权利要求1所述的非晶薄膜的形成方法,其特征在于,
上述含硼气体为B2H6。
3.如权利要求1所述的非晶薄膜的形成方法,其特征在于,
上述第一源气体中包含的硅烷系气体为SiH4,
上述第二源气体中包含的硅烷系气体为SiH4。
4.如权利要求1所述的非晶薄膜的形成方法,其特征在于,
上述第一源气体是150sccm的SiH4、50sccm的B2H6以及15000sccm的N2的混合气体,
上述第二源气体是150sccm的SiH4、50sccm的B2H6、5000sccm的N2以及3000sccm的H2的混合气体。
5.如权利要求4所述的非晶薄膜的形成方法,其特征在于,
上述形成上述第一非晶硅薄膜和形成上述第二非锗薄膜是在300℃执行。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0064857 | 2015-05-08 | ||
KR1020150064857A KR101706747B1 (ko) | 2015-05-08 | 2015-05-08 | 비정질 박막의 형성방법 |
CN201680023468.XA CN107533975B (zh) | 2015-05-08 | 2016-05-09 | 非晶薄膜形成方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680023468.XA Division CN107533975B (zh) | 2015-05-08 | 2016-05-09 | 非晶薄膜形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111799153A true CN111799153A (zh) | 2020-10-20 |
Family
ID=57249150
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680023468.XA Active CN107533975B (zh) | 2015-05-08 | 2016-05-09 | 非晶薄膜形成方法 |
CN202010704396.3A Pending CN111799153A (zh) | 2015-05-08 | 2016-05-09 | 非晶薄膜形成方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680023468.XA Active CN107533975B (zh) | 2015-05-08 | 2016-05-09 | 非晶薄膜形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10246773B2 (zh) |
JP (3) | JP6516871B2 (zh) |
KR (1) | KR101706747B1 (zh) |
CN (2) | CN107533975B (zh) |
TW (2) | TWI692033B (zh) |
WO (1) | WO2016182296A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112020002824T5 (de) | 2019-06-13 | 2022-03-10 | Denso Corporation | Kartendatenerzeugungssystem, Datenzentrum und fahrzeugeigene Vorrichtung |
JP2022143997A (ja) * | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 半導体製造方法および半導体製造装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101084574A (zh) * | 2004-12-14 | 2007-12-05 | 应用材料股份有限公司 | 用于深槽的掺杂硅填充的工艺步骤 |
US20110269315A1 (en) * | 2010-05-01 | 2011-11-03 | Tokyo Electron Limited | Thin film formation method and film formation apparatus |
US20120025200A1 (en) * | 2010-07-30 | 2012-02-02 | Tomonori Aoyama | Semiconductor device and method for manufacturing the same |
US20130056742A1 (en) * | 2010-05-14 | 2013-03-07 | Sharp Kabushiki Kaisha | Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
CN103031530A (zh) * | 2011-09-30 | 2013-04-10 | 东京毅力科创株式会社 | 薄膜的形成方法和成膜装置 |
CN103898601A (zh) * | 2012-12-27 | 2014-07-02 | 东京毅力科创株式会社 | 晶种层的形成方法、硅膜的成膜方法以及成膜装置 |
CN104183535A (zh) * | 2013-05-27 | 2014-12-03 | 东京毅力科创株式会社 | 填充沟道的方法和处理装置 |
US20150056791A1 (en) * | 2013-08-22 | 2015-02-26 | Tokyo Electron Limited | Depression filling method and processing apparatus |
JP2015065447A (ja) * | 2011-09-30 | 2015-04-09 | 東京エレクトロン株式会社 | 薄膜の形成方法及び成膜装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0654755B2 (ja) * | 1985-07-15 | 1994-07-20 | 三井東圧化学株式会社 | 半導体薄膜の形成方法 |
JP3599290B2 (ja) * | 1994-09-19 | 2004-12-08 | 株式会社ルネサステクノロジ | 半導体装置 |
JPH09191092A (ja) * | 1995-12-23 | 1997-07-22 | Samsung Electron Co Ltd | 多結晶シリコン膜の形成方法及びこれを用いた半導体装置のキャパシタの製造方法 |
KR100224707B1 (ko) * | 1995-12-23 | 1999-10-15 | 윤종용 | 반도체 장치 커패시터의 제조방법 |
US6410090B1 (en) * | 1998-09-29 | 2002-06-25 | Applied Materials, Inc. | Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films |
US7005392B2 (en) * | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US6800510B2 (en) * | 2002-11-06 | 2004-10-05 | Hannstar Display Corporation | Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display |
US20050101160A1 (en) * | 2003-11-12 | 2005-05-12 | Diwakar Garg | Silicon thin film transistors and solar cells on plastic substrates |
JP2007329200A (ja) * | 2006-06-06 | 2007-12-20 | Toshiba Corp | 半導体装置の製造方法 |
US8153887B2 (en) * | 2006-09-11 | 2012-04-10 | Silicon China (HK) Ltd. | Method and structure for hydrogenation of silicon substrates with shaped covers |
JP5525694B2 (ja) * | 2007-03-14 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5311791B2 (ja) * | 2007-10-12 | 2013-10-09 | 東京エレクトロン株式会社 | ポリシリコン膜の形成方法 |
US8365075B2 (en) | 2009-11-19 | 2013-01-29 | International Business Machines Corporation | Recording events in a virtual world |
US20120142172A1 (en) * | 2010-03-25 | 2012-06-07 | Keith Fox | Pecvd deposition of smooth polysilicon films |
JP4967066B2 (ja) * | 2010-04-27 | 2012-07-04 | 東京エレクトロン株式会社 | アモルファスシリコン膜の成膜方法および成膜装置 |
FI124354B (fi) * | 2011-04-04 | 2014-07-15 | Okmetic Oyj | Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille |
JP5829196B2 (ja) * | 2011-10-28 | 2015-12-09 | 東京エレクトロン株式会社 | シリコン酸化物膜の成膜方法 |
JP5792101B2 (ja) * | 2012-03-15 | 2015-10-07 | 東京エレクトロン株式会社 | 積層半導体膜の成膜方法 |
KR20130107628A (ko) | 2012-03-22 | 2013-10-02 | 삼성디스플레이 주식회사 | 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법 |
US9165788B2 (en) * | 2012-04-06 | 2015-10-20 | Novellus Systems, Inc. | Post-deposition soft annealing |
JP6068130B2 (ja) * | 2012-12-25 | 2017-01-25 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
JP6336866B2 (ja) * | 2013-10-23 | 2018-06-06 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理装置およびプログラム |
JP6150724B2 (ja) * | 2013-12-27 | 2017-06-21 | 東京エレクトロン株式会社 | 凹部を充填する方法 |
US9543438B2 (en) * | 2014-10-15 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact resistance reduction technique |
US9899291B2 (en) * | 2015-07-13 | 2018-02-20 | Asm Ip Holding B.V. | Method for protecting layer by forming hydrocarbon-based extremely thin film |
JP6554438B2 (ja) * | 2016-03-30 | 2019-07-31 | 東京エレクトロン株式会社 | シリコン膜の形成方法および形成装置 |
-
2015
- 2015-05-08 KR KR1020150064857A patent/KR101706747B1/ko active IP Right Grant
-
2016
- 2016-04-28 TW TW107102920A patent/TWI692033B/zh active
- 2016-04-28 TW TW105113256A patent/TWI627677B/zh active
- 2016-05-09 CN CN201680023468.XA patent/CN107533975B/zh active Active
- 2016-05-09 JP JP2017558451A patent/JP6516871B2/ja active Active
- 2016-05-09 WO PCT/KR2016/004833 patent/WO2016182296A1/ko active Application Filing
- 2016-05-09 US US15/568,536 patent/US10246773B2/en active Active
- 2016-05-09 CN CN202010704396.3A patent/CN111799153A/zh active Pending
-
2019
- 2019-03-15 JP JP2019048567A patent/JP2019114802A/ja active Pending
- 2019-03-15 JP JP2019048568A patent/JP6722794B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101084574A (zh) * | 2004-12-14 | 2007-12-05 | 应用材料股份有限公司 | 用于深槽的掺杂硅填充的工艺步骤 |
US20110269315A1 (en) * | 2010-05-01 | 2011-11-03 | Tokyo Electron Limited | Thin film formation method and film formation apparatus |
US20130056742A1 (en) * | 2010-05-14 | 2013-03-07 | Sharp Kabushiki Kaisha | Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
US20120025200A1 (en) * | 2010-07-30 | 2012-02-02 | Tomonori Aoyama | Semiconductor device and method for manufacturing the same |
CN103031530A (zh) * | 2011-09-30 | 2013-04-10 | 东京毅力科创株式会社 | 薄膜的形成方法和成膜装置 |
JP2015065447A (ja) * | 2011-09-30 | 2015-04-09 | 東京エレクトロン株式会社 | 薄膜の形成方法及び成膜装置 |
CN103898601A (zh) * | 2012-12-27 | 2014-07-02 | 东京毅力科创株式会社 | 晶种层的形成方法、硅膜的成膜方法以及成膜装置 |
CN104183535A (zh) * | 2013-05-27 | 2014-12-03 | 东京毅力科创株式会社 | 填充沟道的方法和处理装置 |
US20150056791A1 (en) * | 2013-08-22 | 2015-02-26 | Tokyo Electron Limited | Depression filling method and processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
TW201709330A (zh) | 2017-03-01 |
CN107533975B (zh) | 2020-10-02 |
CN107533975A (zh) | 2018-01-02 |
JP2019110336A (ja) | 2019-07-04 |
JP2018515928A (ja) | 2018-06-14 |
TW201818472A (zh) | 2018-05-16 |
WO2016182296A1 (ko) | 2016-11-17 |
US10246773B2 (en) | 2019-04-02 |
KR101706747B1 (ko) | 2017-02-15 |
TWI692033B (zh) | 2020-04-21 |
KR20160131793A (ko) | 2016-11-16 |
JP6516871B2 (ja) | 2019-05-22 |
JP6722794B2 (ja) | 2020-07-15 |
US20180112307A1 (en) | 2018-04-26 |
JP2019114802A (ja) | 2019-07-11 |
TWI627677B (zh) | 2018-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11031242B2 (en) | Methods for depositing a boron doped silicon germanium film | |
US10262859B2 (en) | Process for forming a film on a substrate using multi-port injection assemblies | |
US20210118679A1 (en) | Methods for selective deposition of doped semiconductor material | |
TWI692545B (zh) | 形成高p型摻雜鍺錫膜的方法以及包含該等膜的結構和裝置 | |
US9396934B2 (en) | Methods of forming films including germanium tin and structures and devices including the films | |
KR20180123444A (ko) | 실리콘 함유 에피택셜층을 형성하기 위한 방법 및 관련 반도체 소자 구조체 | |
US20170154770A1 (en) | Methods of forming silicon germanium tin films and structures and devices including the films | |
US8815714B2 (en) | Method of forming a germanium thin film | |
WO2002080244A2 (en) | Improved process for deposition of semiconductor films | |
KR20130047580A (ko) | 시드층의 형성 방법 및 실리콘 함유 박막의 성막 방법 | |
CN107430994B (zh) | 提高选择性外延生长的生长速率的方法 | |
CN107533975B (zh) | 非晶薄膜形成方法 | |
CN102324406A (zh) | 可降低外延时自掺杂的外延片衬底、外延片及半导体器件 | |
TWI739332B (zh) | 用於低溫矽化物形成的方法 | |
WO2009002028A3 (en) | Method and apparatus for depositing thin film | |
US20230349069A1 (en) | Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same | |
TWI836199B (zh) | 提高選擇性磊晶生長之生長速率的方法 | |
KR20200073452A (ko) | 저온 실리콘 절연막 증착 방법 | |
CN103348445B (zh) | 用于拉伸应变应用上的高拉伸硅合金的外延法 | |
TW202412074A (zh) | 提高選擇性磊晶生長之生長速率的方法 | |
CN103348445A (zh) | 用于拉伸应变应用上的高拉伸硅合金的外延法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |