TW201709330A - 非晶質薄膜之形成方法 - Google Patents

非晶質薄膜之形成方法 Download PDF

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TW201709330A
TW201709330A TW105113256A TW105113256A TW201709330A TW 201709330 A TW201709330 A TW 201709330A TW 105113256 A TW105113256 A TW 105113256A TW 105113256 A TW105113256 A TW 105113256A TW 201709330 A TW201709330 A TW 201709330A
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film
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amorphous
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申承祐
柳次英
鄭愚德
崔豪珉
吳完錫
李郡禹
權赫龍
金基鎬
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尤金科技有限公司
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Abstract

本發明提供一種非晶質薄膜之形成方法，該方法包含：藉由在一基底上供應胺基矽烷基氣體以在該基底之表面上形成一晶種層；藉由在該晶種層上供應包括硼基氣體之第一來源氣體以形成該第一硼摻雜非晶質薄膜；及藉由在該第一非晶質薄膜上供應包括硼基氣體之第二來源氣體以形成該第二硼摻雜非晶質薄膜。

Description

非晶質薄膜之形成方法
本文揭示之本發明係關於一種非晶質薄膜之形成方法，且更特定而言，係關於一種沉積一膜之方法，其可藉由在形成第一硼摻雜非晶質薄膜之後形成第二硼摻雜非晶質薄膜而使該第二非晶質薄膜之表面粗糙度最小化。
當在低溫(低於300度C)下沉積一非晶質薄膜時，若摻雜硼則表面粗糙度快速地劣化。特定而言，若該非晶質薄膜之目標厚度為200Å時，則其可能難以形成具有等於或小於0.3nm之表面粗糙度(RMS)之非晶質薄膜。因此，需要改善表面粗糙度之技術。
本發明之目標係提供一種用於沉積一膜之方法，其可將一非晶質薄膜之表面粗糙度最小化。
本發明之進一步另一目標在參照以下詳細描述及隨附圖式將變得顯而易見。
本發明之具體實施例提供一種非晶質薄膜之形成方法，該方法包含：藉由在一基底上供應胺基矽烷基氣體以在該基底之表面上形成一晶種層；藉由在該晶種層上供應包括硼基氣體之第一來源氣體以形成該第 一硼摻雜非晶質薄膜；及藉由在該第一非晶質薄膜上供應包括硼基氣體之第二來源氣體以形成該第二硼摻雜非晶質薄膜。
該硼基氣體可係B2H6。
包括在該第一來源氣體之矽烷基氣體可係SiH4。
包括在該第二來源氣體之矽烷基氣體可係Si2H6且該第二非晶質薄膜可係矽薄膜，該形成第一非晶質薄膜可在300度C下進行，且該形成第二非晶質薄膜可在400度C下進行。
包括在該第二來源氣體之矽烷基氣體可係比例為4：1之SiH4及Si2H6之混合氣體，且該第二非晶質薄膜可係矽薄膜。
該第二來源氣體可進一步包括矽烷基氣體及鍺基氣體，且包括在該第二來源氣體之該矽烷基氣體及鍺基氣體可以1：2之比例混合。
包括在該第二來源氣體之矽烷基氣體可係SiH4且該二非晶質薄膜係矽薄膜，該第一來源氣體可包括N2 15000sccm，且該第二來源氣體可包括N2 5000sccm及H2 3000sccm。
該第二來源氣體可包括鍺基氣體，且該第二非晶質薄膜係鍺薄膜。
根據本發明之一具體實施例，可能藉由在形成該第一薄膜之後形成該第二薄膜以將第二薄膜之表面粗糙度最小化。
所包括之隨附圖式提供對本發明之進一步了解，並併入且構成本說明書之一部份。該等圖式說明本發明之示例性具體實施例，並連同實施方式一起用於解釋本發明之原理。在該等圖式中： 第一圖係說明根據程序條件改變而改善之非晶質薄膜之表面粗糙度之圖；第二圖係說明根據厚度增加之非晶質薄膜之表面粗糙度之圖；第三圖係說明根據本發明之第一至第四具體實施例改善之非晶質薄膜之表面粗糙度之圖。
下文中，本發明之示例性具體實施例將參考第一圖至第三圖更詳細地描述。然而，本發明可以不同形式體現且不應視為限於本文所提及之具體實施例。而是，提供該等具體實施例使得本發明將連貫及完備，並向熟習本技術之人士完全地傳達本發明之範疇。在該等圖式，層及區域之尺寸為清楚說明而放大。
第一圖係說明根據程序條件改變而改善之非晶質薄膜之表面粗糙度之圖。首先，一基底係在一矽基板上形成且該基底可係氧化矽膜或氮化矽膜。藉由在該基板之表面上供應胺基矽烷基氣體(例如：DIPAS)以在該基底上形成一晶種層且接著在該晶種層上形成一非晶質薄膜。
第一圖中說明之非晶質薄膜係在如下表1之程序條件下形成，且在藉由供應該胺基矽烷基氣體達30秒以形成該晶種層之後，該非晶質薄膜形成為200Å。供作參考，D/R意指沉積比例。
同時，二硼烷(B2H6)係硼基氣體之一實例且其可用另一硼基氣體取代，不同於以下程序條件。
如第一圖中所示，可理解隨著該程序條件自該參考程序(300℃ Ref)改變時，該表面粗糙度改善。考量第一圖，改善之效果如下。
首先該非晶質薄膜之程序條件之程序溫度自300度C增加至400度C，且在此情況下，該表面粗糙度自0.614改善至0.457。
其次，該矽烷基氣體自單矽烷(SiH4)改變至單矽烷(SiH4)與二矽烷(Si2H6)之混合氣體，且該單矽烷與該二矽烷係以4：1之比例混合。在此情況下，該表面粗糙度係自0.651改善至0.484。
第三係供應GeH4，且在此情況下，該表面粗糙度自0.561改善至0.401。
第四係供應氫氣，且在此情況下，該表面粗糙度自0.534改善至0.433。
然而，該非晶質薄膜之表面粗糙度隨其厚度增加而變化如下。若將表2以圖顯示，其係如第二圖。
即，如表2及第二圖，該非晶質薄膜之表面粗糙度相較於其餘程序在參考程序中係最優異的，但在該參考程序之情況下，該表面粗糙度隨該非晶質薄膜之厚度增加而快速地增加。同時，在其餘程序之情況下，根據該非晶質薄膜之厚度之表面粗糙度的變化係不明顯的。
以此觀點，藉由在使用該參考程序形成該第一非晶質薄膜之後經由各別程序條件形成該第二非晶質薄膜，其可明顯地改善該第二非晶質薄膜之表面粗糙度，如第三圖所示。
另一方面，如表1中第五列所示，該參考程序之矽烷基氣體(單矽烷或二矽烷)可由鍺基氣體取代，且在此情況下，該非晶質薄膜並非一矽薄膜而是一鍺薄膜。當為該鍺薄膜之第二非晶質薄膜係形成於上述第一非晶質薄膜上時，其可經確認該第二非晶質薄膜之表面粗糙度同樣地被改善。
以上揭示標的係視作說明性，且非限制性，以及隨附申請專利範圍意欲包涵所有屬於本發明之真實精神與範疇之此等修正、加強、及其它具體實施例。因此，為達到法律許可之最大範圍，本發明之範疇係藉由以下申請專利範圍及其等效物之最廣容許解釋決定，且不應受到前述實施方法限制或限定。

Claims (8)

  1. 一種非晶質薄膜之形成方法，包含：藉由在一基底上供應胺基矽烷基氣體，以在該基底之一表面上形成一晶種層；藉由在該晶種層上供應包括硼基氣體之第一來源氣體，以形成第一硼摻雜非晶質薄膜；及藉由在該第一非晶質薄膜上供應包括硼基氣體之第二來源氣體，以形成第二硼摻雜非晶質薄膜。
  2. 如申請專利範圍第1項之形成方法，其中該硼基氣體係B2H6。
  3. 如申請專利範圍第1或2項之形成方法，其中包括在該第一來源氣體中之矽烷基氣體係SiH4。
  4. 如申請專利範圍第3項之形成方法，其中包括在該第二來源氣體中之矽烷基氣體係Si2H6，且該第二非晶質薄膜係矽薄膜，該第一非晶質薄膜之形成係在300度下進行，及該第二非晶質薄膜之形成係在400度下進行。
  5. 如申請專利範圍第3項之形成方法，其中包括在該第二來源氣體中之矽烷基氣體係比例為4：1之SiH4及Si2H6之混合氣體，及該第二非晶質薄膜係矽薄膜。
  6. 如申請專利範圍第3項之形成方法，其中該第二來源氣體進一步包括矽烷基氣體及鍺基氣體，及包括在該第二來源氣體中之矽烷基氣體及鍺基氣體係以1：2之比例混合。
  7. 如申請專利範圍第3項之形成方法，其中包括在該第二來源氣體中之矽烷基氣體係SiH4，且該第二非晶質薄膜係矽薄膜，該第一來源氣體包括15000sccm的N2，及該第二來源氣體包括5000sccm的N2以及3000sccm的H2。
  8. 如申請專利範圍第3項之形成方法，其中該第二來源氣體包括鍺基氣體，及該第二非晶質薄膜係鍺薄膜。
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