CN107533975B - 非晶薄膜形成方法 - Google Patents

非晶薄膜形成方法 Download PDF

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CN107533975B
CN107533975B CN201680023468.XA CN201680023468A CN107533975B CN 107533975 B CN107533975 B CN 107533975B CN 201680023468 A CN201680023468 A CN 201680023468A CN 107533975 B CN107533975 B CN 107533975B
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thin film
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amorphous thin
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申承祐
柳次英
郑愚德
崔豪珉
吴完锡
李郡禹
权赫龙
金基镐
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Eugene Technology Co Ltd
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Abstract

本发明涉及形成非晶薄膜的方法。根据本发明的一实施例，形成非晶薄膜的方法包括：在基底上流过氨基硅烷系气体，从而在上述基底表面形成种子层的工序；在上述种子层供给包括含硼气体的第一源气体而形成掺杂有硼的第一非晶薄膜的工序；以及在上述第一非晶薄膜供给包括含硼气体的第二源气体而形成掺杂有硼的第二非晶薄膜的工序。

Description

非晶薄膜形成方法
技术领域
本发明涉及形成非晶薄膜的方法，更详细地涉及形成掺杂硼的第一非晶薄膜之后形成掺杂硼的第二非晶薄膜来最小化第二非晶薄膜的表面粗糙度的成膜方法。
背景技术
在低温(小于300度)蒸镀非晶薄膜(amorphous thin film)的情况下，若掺杂硼，则表面粗糙度急剧下降。特别是，若将非晶薄膜的目标厚度设为
Figure BDA0001441732030000011
则难以形成表面粗糙度(RMS)0.3nm以下的非晶薄膜。因此，需要可以改善这个温度的技术。
发明内容
技术问题
本发明的目的在于，提供一种可以最小化非晶薄膜的表面粗糙度的成膜方法。
本发明的其它目的根据下面的详细说明和附图会变得更加清楚。
问题解决方案
根据本发明的一实施例，形成非晶薄膜的方法包括：在基底上流过氨基硅烷系气体，从而在上述基底表面形成种子层的工序；及在上述种子层上形成既定厚度的非晶薄膜的工序；其中，形成上述非晶薄膜的工序包括：在上述种子层上形成第一非晶薄膜的工序，该第一非晶薄膜掺杂硼并具有第一厚度；在上述第一非晶薄膜上形成第二非晶薄膜的工序，该第二非晶薄膜掺杂硼并具有第二厚度；使用于形成上述第一非晶薄膜的工序的第一源气体包括含硼气体及硅烷系气体且供给到上述种子层；使用于形成上述第二非晶薄膜的工序的第二源气体包括含硼气体且与上述第一源气体不同，而且被供给到上述第一非晶薄膜。
上述硼类气体可以是B2H6。
包含在上述第一源气体的硅烷系气体可以是SiH4。
包含在上述第二源气体的硅烷系气体是Si2H6，上述第二非晶薄膜是硅薄膜，形成上述第一非晶薄膜的工序在300度进行，形成上述第二非晶薄膜的工序可以在400度进行。
包含在上述第二源气体的硅烷系气体中SiH4和Si2H6以4：1的比率混合，上述第二非晶薄膜可以是硅薄膜。
上述第二源气体还包含硅烷系气体及含锗气体，包含在上述第二源气体的硅烷系气体和含锗气体可以按1：2混合。
包含在上述第二源气体的硅烷系气体是SiH4，上述第二非晶薄膜是硅薄膜，上述第一源气体包含15000sccm的N2，上述第二源气体可以包含5000sccm的N2，3000sccm的H2。
上述第二源气体包含含锗气体，上述第二非晶薄膜可以是锗薄膜。
上述第一厚度为
Figure BDA0001441732030000025
以上
Figure BDA0001441732030000022
以下，上述第二厚度是
Figure BDA0001441732030000023
以上。
上述既定的厚度为
Figure BDA0001441732030000024
以上。
发明效果
根据本发明的一实施例，形成第一薄膜之后形成第二薄膜，从而可以最小化第二薄膜的表面粗糙度。
附图说明
图1是表示随着工序条件的变化改善的非晶薄膜的表面粗糙度的图表。
图2是表示基于厚度增加的非晶薄膜的表面粗糙度的图表。
图3是根据本发明的第一至第四实施例改善的非晶薄膜的表面粗糙度的图表。
具体实施方式
下面，参考所附的图1于图3更详细地说明本发明的优选的实施例。本发明的实施例可以变形为各种形态，不应解释为本发明的范围由下面说明的实施例限定。本实施例是为了向本发明所属技术领域的普通技术人员更详细地说明本发明而提供的。因此，为了强调更清楚的说明，附图中出现的各要素的形状可能被夸张。
图1是表示随着工序条件的变化改善的非晶薄膜的表面粗糙度的图表。首先，在硅基板上形成基底，基底可以是氧化硅膜或氮化硅膜。在基底上使氨基硅烷系气体(例如，DIPAS)流过基板的表面来形成种子层，然后将非晶薄膜形成在种子层上。
图1所示的非晶薄膜按照如下表1的工序条件形成，使氨基硅烷系气体流过30秒时间来形成种子层之后，图1所示的非晶薄膜形成
Figure BDA0001441732030000032
作为参考，D/R表示蒸镀率。
另一方面，乙硼烷(B2H6)是含硼气体的例子，不同于下面的工序条件，可以用其它含硼气体代替。
[表1]
Figure BDA0001441732030000031
如图1所示，随着将工序条件从基准工序(300℃Ref)变化，可知表面粗糙度得到改善。若观察图1，改善效果如下。
第一个是将非晶薄膜的工序条件中的工序温度从300度上升到400度的情况，该情况下表面粗糙度从0.614改善为0.457。
第二个是将硅烷系气体从甲硅烷SiH4变更为甲硅烷(SiH4)和乙硅烷(Si2H6)的混合气体的情况，甲硅烷和乙硅烷按4：1的比率混合。该情况下表面粗糙度从0.651改善为0.484。
第三个是供给GeH4的情况，该情况下表面粗糙度从0.561改善为0.401。
第四个是供给氢气的情况，该情况下表面粗糙度从0.534改善为0.433。
但是，非晶薄膜随着厚度增加，表面粗糙度如下变化。若将表2用图表表示，则如图2。
[表2]
Figure BDA0001441732030000041
即，如表2及图2所示，在
Figure BDA0001441732030000042
关于非晶薄膜的表面粗糙度，基准工序与其它工序相比最优秀，但是基准工序的情况下，随着非晶薄膜的厚度增加，表面粗糙度急剧增加。相反，在其它工序的情况下，表面粗糙度的基于非晶薄膜的厚度的变化微小。
若考虑这些，利用基准工序形成第一非晶薄膜之后，通过各工序条件形成第二非晶薄膜，从而如图3所示可以大幅改善第二非晶薄膜的表面粗糙度。
另一方面，如表1的第五个项目记载，基准工序的硅烷系气体(甲硅烷或乙硅烷)可以用含锗气体代替，该情况下非晶薄膜不是硅膜而是锗膜。在前面说明的第一非晶薄膜上形成锗薄膜的第二非晶薄膜时，可以确认第二非晶薄膜的表面粗糙度同样被改善。
通过优选的实施例详细说明了本发明，但是也可以是与此不同方式的实施例。因此，下面记载的权利要求的技术思想和范围不受优选实施例的限制。
工业可利用性
本发明可以应用于多样形态的半导体制造设备及制造方法。

Claims (7)

1.一种非晶薄膜的形成方法，其特征在于，包括：
在基底上流过氨基硅烷系气体，从而在上述基底表面形成种子层的工序；及
在上述种子层上形成既定厚度的非晶薄膜的工序；
其中，上述的形成上述非晶薄膜的工序包括：
在上述种子层上形成第一非晶硅薄膜的工序，该第一非晶硅薄膜掺杂硼并具有第一厚度；
在上述第一非晶硅薄膜上形成第二非晶锗薄膜的工序，该第二非晶锗薄膜掺杂硼并具有第二厚度；
使用于形成上述第一非晶硅薄膜的工序的第一源气体包括含硼气体及硅烷系气体且供给到上述种子层；
使用于形成上述第二非晶锗薄膜的工序的第二源气体包括含硼气体和含锗气体，且上述第二源气体与上述第一源气体不同，而且上述第二源气体被供给到上述第一非晶硅薄膜，
其中，上述第一厚度是
Figure FDA0002591892230000011
上述第二厚度是
Figure FDA0002591892230000012
以上。
2.如权利要求1所述的非晶薄膜的形成方法，其特征在于，
上述含硼气体为B2H6。
3.如权利要求1或2所述的非晶薄膜的形成方法，其特征在于，
上述第一源气体中包括SiH4、B2H6、N2。
4.如权利要求3所述的非晶薄膜的形成方法，其特征在于，
上述第二源气体中包括GeH4、B2H6、N2、H2。
5.如权利要求1或2所述的非晶薄膜的形成方法，其特征在于，
上述第一源气体中包括150sccm的SiH4、50sccm的B2H6以及15000sccm的N2，
上述第二源气体中包括500sccm的GeH4、100sccm的B2H6、5000sccm的N2以及3000sccm的H2。
6.如权利要求5所述的非晶薄膜的形成方法，其特征在于，
上述形成上述第一非晶硅薄膜和形成上述第二非锗薄膜是在300℃执行。
7.如权利要求1或2所述的非晶薄膜的形成方法，其特征在于，
上述既定厚度为
Figure FDA0002591892230000021
以上。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008033864A1 (en) * 2006-09-11 2008-03-20 Silicon China (Hk) Limited Method and structure for hydrogenation of silicon substrates with shaped covers
US20130244399A1 (en) * 2012-03-15 2013-09-19 Tokyo Electron Limited Method of forming a laminated semiconductor film
JP2015065447A (ja) * 2011-09-30 2015-04-09 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654755B2 (ja) * 1985-07-15 1994-07-20 三井東圧化学株式会社 半導体薄膜の形成方法
JP3599290B2 (ja) * 1994-09-19 2004-12-08 株式会社ルネサステクノロジ 半導体装置
JPH09191092A (ja) * 1995-12-23 1997-07-22 Samsung Electron Co Ltd 多結晶シリコン膜の形成方法及びこれを用いた半導体装置のキャパシタの製造方法
KR100224707B1 (ko) * 1995-12-23 1999-10-15 윤종용 반도체 장치 커패시터의 제조방법
US6410090B1 (en) * 1998-09-29 2002-06-25 Applied Materials, Inc. Method and apparatus for forming insitu boron doped polycrystalline and amorphous silicon films
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US6800510B2 (en) * 2002-11-06 2004-10-05 Hannstar Display Corporation Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display
US20050101160A1 (en) * 2003-11-12 2005-05-12 Diwakar Garg Silicon thin film transistors and solar cells on plastic substrates
US7109097B2 (en) * 2004-12-14 2006-09-19 Applied Materials, Inc. Process sequence for doped silicon fill of deep trenches
JP2007329200A (ja) * 2006-06-06 2007-12-20 Toshiba Corp 半導体装置の製造方法
JP5525694B2 (ja) * 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5311791B2 (ja) * 2007-10-12 2013-10-09 東京エレクトロン株式会社 ポリシリコン膜の形成方法
US8365075B2 (en) 2009-11-19 2013-01-29 International Business Machines Corporation Recording events in a virtual world
US20120142172A1 (en) * 2010-03-25 2012-06-07 Keith Fox Pecvd deposition of smooth polysilicon films
JP4967066B2 (ja) * 2010-04-27 2012-07-04 東京エレクトロン株式会社 アモルファスシリコン膜の成膜方法および成膜装置
JP5696530B2 (ja) * 2010-05-01 2015-04-08 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
WO2011142443A1 (en) * 2010-05-14 2011-11-17 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline silicon film, manufacturing method thereof, semiconductor device, and manufacturing method thereof
JP2012033750A (ja) * 2010-07-30 2012-02-16 Toshiba Corp 半導体装置及びその製造方法
FI124354B (fi) * 2011-04-04 2014-07-15 Okmetic Oyj Menetelmä yhden tai useamman polykiteisen piikerroksen pinnoittamiseksi substraatille
JP5741382B2 (ja) * 2011-09-30 2015-07-01 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
JP5829196B2 (ja) * 2011-10-28 2015-12-09 東京エレクトロン株式会社 シリコン酸化物膜の成膜方法
KR20130107628A (ko) 2012-03-22 2013-10-02 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법
US9165788B2 (en) * 2012-04-06 2015-10-20 Novellus Systems, Inc. Post-deposition soft annealing
JP6068130B2 (ja) * 2012-12-25 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP5947710B2 (ja) * 2012-12-27 2016-07-06 東京エレクトロン株式会社 シード層の形成方法、シリコン膜の成膜方法および成膜装置
JP6059085B2 (ja) * 2013-05-27 2017-01-11 東京エレクトロン株式会社 トレンチを充填する方法及び処理装置
JP6174943B2 (ja) * 2013-08-22 2017-08-02 東京エレクトロン株式会社 凹部を充填する方法
JP6336866B2 (ja) * 2013-10-23 2018-06-06 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6150724B2 (ja) * 2013-12-27 2017-06-21 東京エレクトロン株式会社 凹部を充填する方法
US9543438B2 (en) * 2014-10-15 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Contact resistance reduction technique
US9899291B2 (en) * 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6554438B2 (ja) * 2016-03-30 2019-07-31 東京エレクトロン株式会社 シリコン膜の形成方法および形成装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008033864A1 (en) * 2006-09-11 2008-03-20 Silicon China (Hk) Limited Method and structure for hydrogenation of silicon substrates with shaped covers
JP2015065447A (ja) * 2011-09-30 2015-04-09 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
US20130244399A1 (en) * 2012-03-15 2013-09-19 Tokyo Electron Limited Method of forming a laminated semiconductor film

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