JP2019514042A5 - - Google Patents

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JP2019514042A5
JP2019514042A5 JP2018547903A JP2018547903A JP2019514042A5 JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5 JP 2018547903 A JP2018547903 A JP 2018547903A JP 2018547903 A JP2018547903 A JP 2018547903A JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5
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Japan
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buffer
further embodiments
hardmask
nitride
silicon nitride
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JP2018547903A
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JP2019514042A (ja
JP6993982B2 (ja
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Priority claimed from PCT/US2017/021769 external-priority patent/WO2017156388A1/en
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バッファハードマスク１０４は、パターン形成されたハードマスク材料及び充填材料に対して同時に、並びに基板材料に対して独立に差別的なエッチングを提供するように設計される。本明細書で説明する特に関心の持たれる材料としては、窒化チタン、窒化タンタル、又は窒化ケイ素を、バッファハードマスク１０４に適した材料として特定することができるが、酸化ケイ素などのセラミック酸化物、又は酸窒化ケイ素などのそれらの組み合わせを、残りの材料の適切な選択と共に使用することもできる。バッファハードマスク層は、約１ミクロン以下、更なる実施形態では約２ｎｍ〜約１００ｎｍ、別の実施形態では約３ｎｍ〜約５０ｎｍ、更なる実施形態では約４ｎｍ〜約２０ｎｍの平均厚さを有することがある。当業者であれば、上記の明示的な範囲内にある別の範囲のバッファハードマスク層の厚さも考えられ、本開示の範囲内であることを、認識するであろう。
JP2018547903A 2016-03-11 2017-03-10 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス Active JP6993982B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662306979P 2016-03-11 2016-03-11
US62/306,979 2016-03-11
PCT/US2017/021769 WO2017156388A1 (en) 2016-03-11 2017-03-10 Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates

Publications (3)

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JP2019514042A JP2019514042A (ja) 2019-05-30
JP2019514042A5 true JP2019514042A5 (ja) 2021-08-12
JP6993982B2 JP6993982B2 (ja) 2022-02-04

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JP2018547903A Active JP6993982B2 (ja) 2016-03-11 2017-03-10 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス

Country Status (6)

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US (2) US10649328B2 (ja)
JP (1) JP6993982B2 (ja)
KR (1) KR102394042B1 (ja)
CN (1) CN108780739B (ja)
TW (1) TWI721125B (ja)
WO (1) WO2017156388A1 (ja)

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