JP2019208002A - 膜、マルチレベル素子、マルチレベル素子の製造方法、マルチレベル素子の駆動方法 - Google Patents
膜、マルチレベル素子、マルチレベル素子の製造方法、マルチレベル素子の駆動方法 Download PDFInfo
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Abstract
Description
によって、前記第2のアクティブ層の活性化がシールドされてもよい。
電極120に印加される場合、前記第1のアクティブ層150を流れる電流の量が飽和(saturation)されたことを意味する。すなわち、第2のゲート電圧範囲R2では、ゲート電圧が増加しても電流が保持されるという点で、仲介(intermediate)電圧範囲であると理解されてもよい。
of state)を説明するための図であり、図8は、結晶質、非晶質、本発明の一実施形態に係るアクティブ層のDOS(density of state)を説明するための図であり、図9は、本発明の一実施形態に係る波動関数を説明するための図であり、図10は、本発明の一実施形態に係るマルチレベル素子をエネルギーバンドの観点から説明するための図である。
制限された電流の移動を提供することができる。前記量子化された伝導性状態について図7及び図8aに基づいてより詳細に説明する。
、第1のゲート電圧範囲から第5のゲート電圧範囲(R1〜R5)を提供することができる。すなわち、前記第2及び第4のゲート電圧範囲(R2、R4)において、量子化された伝導性状態による飽和電流が発生することができ、前記第5のゲート電圧範囲R5において、第3のアクティブ層174とソース/ドレイン電極180、185の接触によって電流は増加することができる。
段階S110は、事前用意の段階であって、基板を用意する段階と、基板上にゲート電極を形成する段階と、前記ゲート電極上にゲート絶縁膜を形成する段階と、を含んでいてもよい。
段階S120において第1のアクティブ層150が蒸着されてもよい。図16に基づいて段階S120を具体的に説明する。
ソースガス加圧ドージング段階(S210)のために、ソースガスが用意されてもよい。ソースガスは、蒸着しようとする膜の種類に応じて種々に用意されてもよい。例えば、蒸着しようとする膜が金属酸化物である場合、それに対応する金属前駆体ソースガスが用意されてもよい。例えば、蒸着しようとする膜がジンクオキサイド(ZnO)である場合、ソースガスは、DEZ(diethyl zinc)を含んでいてもよい。
第1のメインパージング段階(S220)において、不活性ガスが用いられてもよく、不活性ガスは、例えば、アルゴン(Ar)、または窒素(N2)ガスからなってもよい。パージングする段階によって、基板の表面に吸着し切れなかった過剰のソースガスが除去可能である。
反応ガスドージング段階(S230)において、反応ガスは、ソースガスと反応して蒸着しようとする膜に還元されてもよい。例えば、ソースガスがDEZを含む場合、反応ガスはH2Oからなってもよい。
反応ガスドージング段階後に、第2のメインパージング段階(S240)がさらに行われてもよい。これにより、基板の表面に吸着し切れなかった過剰のガスが除去可能になる。
段階S210のソースガス加圧ドージング段階は、加圧雰囲気下で行われてもよい。換言すれば、ソースガス加圧ドージング段階は、高圧の雰囲気下で行われてもよく、これは加圧段階と略称することがある。
加圧ドージング段階によって提供された所定の圧力を保持する段階である。このために、チャンバーの流入口及び流出口が両方とも閉じられてもよい。すなわち、チャンバーは密閉されてもよい。前記サブパージング段階は、前記サブ露出段階後に行われて、過剰に供給されたソースガスを除去することができる。
再び図15を参照すると、第1のアクティブ層150上に第2のバリア層160が蒸着されてもよい。段階S130は、前述した段階S110に対応するので、具体的な説明を省略する。
第2のバリア層160上に第2のアクティブ層170が蒸着されてもよい。このとき、段階S140は、前述した段階S120に対応するので、具体的な説明を省略する。
実験例によるマルチレベル素子を作製するために、まず、基板として300nmの厚さのシリコンウェハを用意し、シリコンウェハ上に70nm厚のアルミニウムゲート電極を蒸着した。ゲート電極の蒸着に際しては、熱気相蒸着により蒸着させた。ゲート電極上に絶縁膜として酸化アルミニウム(Al2O3)を蒸着した。酸化アルミニウムは、原子層蒸着工程を用いて蒸着され、TMA前駆体ソースガス提供段階、パージ段階、H2O提供段階、パージ段階の順で進められた。酸化アルミニウムの厚さを、蒸着されるアクティブ層の層数に応じて異ならせた。酸化アルミニウムの厚さを、アクティブ層の層数が増加するほど厚くした。
Claims (13)
- 非晶質領域及び前記非晶質領域によって取り囲まれる複数の結晶質領域を含み、
前記非晶質領域が有する第1のエネルギー状態のうちの特定の第1のエネルギー状態と前記結晶質領域が有する第2のエネルギー状態のうちの特定の第2のエネルギー状態との共鳴マッチング(resonant matching)によって量子化された伝導性状態が(quantized conduction state)提供される、膜。 - 前記結晶質領域は、ナノサイズである、請求項1に記載の膜。
- 前記結晶質領域は、量子閉じ込め効果(quantum confinement effect)を提供する、請求項1に記載の膜。
- 前記結晶質領域による量子閉じ込め効果は、3軸方向に提供される、請求項3に記載の膜。
- 前記量子化された伝導性状態は、伝導帯内で電子が存在可能な最も低いエネルギー状態である移動度端(mobility edge)よりも高い電子エネルギーで提供される、請求項1に記載の膜。
- 前記複数の結晶質領域は、前記非晶質領域内で任意に分布するが、2次元的に配列される、請求項1に記載の膜。
- 前記量子化された伝導性状態は、所定の電子エネルギー範囲で提供される、請求項1に記載の膜。
- 前記所定の電子エネルギー範囲よりも高い電子エネルギー範囲で局在状態が提供される、請求項7に記載の膜。
- 前記非伝導性状態に対応する電子エネルギー範囲よりも高い電子エネルギー範囲で伝導性状態が提供される、請求項8に記載の膜。
- 前記第1のエネルギー状態の数は、前記第2のエネルギー状態の数よりも多い、請求項1に記載の膜。
- 前記共鳴マッチングは、状態密度(density of state:DOS)の観点からみて、移動度端よりも高いエネルギー範囲で量子化された電子状態の数を提供する、請求項1に記載の膜。
- 前記共鳴マッチングは、状態密度(density of state:DOS)の観点からみて、移動度端よりも高いエネルギー範囲で少なくとも2つの不連続的な電子状態を提供する、請求項1に記載の膜。
- 前記量子化された伝導性状態は、特定のエネルギー範囲で制限されたキャリア移動を許容する、請求項1に記載の膜。
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