JP2019096877A5 - - Google Patents
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- JP2019096877A5 JP2019096877A5 JP2018216745A JP2018216745A JP2019096877A5 JP 2019096877 A5 JP2019096877 A5 JP 2019096877A5 JP 2018216745 A JP2018216745 A JP 2018216745A JP 2018216745 A JP2018216745 A JP 2018216745A JP 2019096877 A5 JP2019096877 A5 JP 2019096877A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silanol
- metal oxide
- gas
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 26
- 239000007789 gas Substances 0.000 claims 23
- 239000010410 layer Substances 0.000 claims 23
- 229910044991 metal oxide Inorganic materials 0.000 claims 18
- 150000004706 metal oxides Chemical class 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 14
- 229910052751 metal Inorganic materials 0.000 claims 14
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 11
- 239000003989 dielectric material Substances 0.000 claims 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims 5
- 239000003054 catalyst Substances 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 230000003301 hydrolyzing effect Effects 0.000 claims 3
- MBMITMZVBNZJTQ-UHFFFAOYSA-N hydroxy-bis[(2-methylpropan-2-yl)oxy]-propan-2-yloxysilane Chemical compound CC(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C MBMITMZVBNZJTQ-UHFFFAOYSA-N 0.000 claims 3
- ORJFXWYTRPGGRK-UHFFFAOYSA-N hydroxy-tris(2-methylbutan-2-yloxy)silane Chemical compound CCC(C)(C)O[Si](O)(OC(C)(C)CC)OC(C)(C)CC ORJFXWYTRPGGRK-UHFFFAOYSA-N 0.000 claims 3
- HLDBBQREZCVBMA-UHFFFAOYSA-N hydroxy-tris[(2-methylpropan-2-yl)oxy]silane Chemical compound CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C HLDBBQREZCVBMA-UHFFFAOYSA-N 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 238000003672 processing method Methods 0.000 claims 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000012495 reaction gas Substances 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000002094 self assembled monolayer Substances 0.000 claims 2
- 239000013545 self-assembled monolayer Substances 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- VCUDBOXVJZSMOK-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecane-1-thiol Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)S VCUDBOXVJZSMOK-UHFFFAOYSA-N 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- ZLZGHBNDPINFKG-UHFFFAOYSA-N chloro-decyl-dimethylsilane Chemical compound CCCCCCCCCC[Si](C)(C)Cl ZLZGHBNDPINFKG-UHFFFAOYSA-N 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- BCNZYOJHNLTNEZ-UHFFFAOYSA-N tert-butyldimethylsilyl chloride Chemical compound CC(C)(C)[Si](C)(C)Cl BCNZYOJHNLTNEZ-UHFFFAOYSA-N 0.000 claims 1
- 150000003573 thiols Chemical class 0.000 claims 1
- QRPMCZNLJXJVSG-UHFFFAOYSA-N trichloro(1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)[Si](Cl)(Cl)Cl QRPMCZNLJXJVSG-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762588855P | 2017-11-20 | 2017-11-20 | |
| US62/588,855 | 2017-11-20 | ||
| US201862685847P | 2018-06-15 | 2018-06-15 | |
| US62/685,847 | 2018-06-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019096877A JP2019096877A (ja) | 2019-06-20 |
| JP2019096877A5 true JP2019096877A5 (enExample) | 2022-01-04 |
| JP7287770B2 JP7287770B2 (ja) | 2023-06-06 |
Family
ID=66533236
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018216745A Active JP7287770B2 (ja) | 2017-11-20 | 2018-11-19 | 完全自己整合性ビアを形成するための選択的付着の方法 |
| JP2018217623A Active JP7193990B2 (ja) | 2017-11-20 | 2018-11-20 | 完全自己整合性ビアを形成するための選択的膜付着の方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018217623A Active JP7193990B2 (ja) | 2017-11-20 | 2018-11-20 | 完全自己整合性ビアを形成するための選択的膜付着の方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US10847363B2 (enExample) |
| JP (2) | JP7287770B2 (enExample) |
| KR (3) | KR102491746B1 (enExample) |
| TW (2) | TWI788463B (enExample) |
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| US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
| US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
| US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
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| US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
| US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
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-
2018
- 2018-11-16 US US16/193,833 patent/US10847363B2/en active Active
- 2018-11-16 US US16/193,849 patent/US10586734B2/en active Active
- 2018-11-19 TW TW107141017A patent/TWI788463B/zh active
- 2018-11-19 TW TW107141020A patent/TWI798290B/zh active
- 2018-11-19 JP JP2018216745A patent/JP7287770B2/ja active Active
- 2018-11-20 KR KR1020180143517A patent/KR102491746B1/ko active Active
- 2018-11-20 KR KR1020180143516A patent/KR102523731B1/ko active Active
- 2018-11-20 JP JP2018217623A patent/JP7193990B2/ja active Active
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2020
- 2020-11-23 US US17/102,054 patent/US11658068B2/en active Active
-
2022
- 2022-09-16 KR KR1020220116934A patent/KR102549289B1/ko active Active
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