JP5081637B2 - 使用済み基板の再生方法 - Google Patents
使用済み基板の再生方法 Download PDFInfo
- Publication number
- JP5081637B2 JP5081637B2 JP2008004069A JP2008004069A JP5081637B2 JP 5081637 B2 JP5081637 B2 JP 5081637B2 JP 2008004069 A JP2008004069 A JP 2008004069A JP 2008004069 A JP2008004069 A JP 2008004069A JP 5081637 B2 JP5081637 B2 JP 5081637B2
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- Prior art keywords
- substrate
- carbon
- thin film
- metal oxide
- fluoride
- Prior art date
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- Expired - Fee Related
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- 239000000758 substrate Substances 0.000 title claims description 67
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 57
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 32
- 239000002041 carbon nanotube Substances 0.000 claims description 32
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims description 18
- 150000004706 metal oxides Chemical class 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- 239000003054 catalyst Substances 0.000 claims description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000001172 regenerating effect Effects 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000011069 regeneration method Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910005347 FeSi Inorganic materials 0.000 description 1
- 229910005329 FeSi 2 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Description
Claims (3)
- 基板上に形成した金属酸化物からなる触媒粒子を核としてカーボン系薄膜を合成し、同薄膜を他材料に転写した後、基板を再生する方法であって、転写後、基板上に残留したカーボン成分を酸素雰囲気で加熱して酸化させる工程と、前記基板上に残留した前記金属酸化物を、フッ化物溶液を用いた処理により除去する工程とからなることを特徴とする使用済み基板の再生方法。
- 前記フッ化物溶液が、フッ化水素1〜50%、フッ化アンモニウム1〜40%および残部水からなることを特徴とする、請求項1記載の使用済み基板の再生方法。
- 前記カーボン系薄膜が、カーボンナノチューブまたはカーボンナノコイルであることを特徴とする、請求項1又は2記載の使用済み基板の再生方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008004069A JP5081637B2 (ja) | 2008-01-11 | 2008-01-11 | 使用済み基板の再生方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2008004069A JP5081637B2 (ja) | 2008-01-11 | 2008-01-11 | 使用済み基板の再生方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009167023A JP2009167023A (ja) | 2009-07-30 |
JP5081637B2 true JP5081637B2 (ja) | 2012-11-28 |
Family
ID=40968672
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JP2008004069A Expired - Fee Related JP5081637B2 (ja) | 2008-01-11 | 2008-01-11 | 使用済み基板の再生方法 |
Country Status (1)
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JP (1) | JP5081637B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011201732A (ja) * | 2010-03-26 | 2011-10-13 | Hitachi Zosen Corp | カーボンナノチューブの剥離方法および剥離用吸引具 |
JP5563945B2 (ja) * | 2010-09-30 | 2014-07-30 | 日本バルカー工業株式会社 | 垂直配向カーボンナノチューブの成長密度制御方法 |
JP6080659B2 (ja) * | 2013-04-05 | 2017-02-15 | 日立造船株式会社 | カーボンナノチューブの生成用基板及びカーボンナノチューブの生成用基板の再利用方法 |
JP6080658B2 (ja) * | 2013-04-05 | 2017-02-15 | 日立造船株式会社 | カーボンナノチューブ生成用基板の製造方法、カーボンナノチューブ生成用基板及びカーボンナノチューブ生成用基板の再利用方法 |
JP6108453B2 (ja) * | 2013-05-21 | 2017-04-05 | 大陽日酸株式会社 | 基板の再利用方法及び基板洗浄装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09260342A (ja) * | 1996-03-18 | 1997-10-03 | Mitsubishi Electric Corp | 半導体装置の製造方法及び製造装置 |
JP2003286017A (ja) * | 2002-03-28 | 2003-10-07 | Mitsubishi Gas Chem Co Inc | 配向性カーボンナノチューブ膜の転写方法 |
JP3877302B2 (ja) * | 2002-06-24 | 2007-02-07 | 本田技研工業株式会社 | カーボンナノチューブの形成方法 |
JP2005213104A (ja) * | 2004-01-30 | 2005-08-11 | New Industry Research Organization | 高配向カーボンナノチューブの生成方法、及び高配向カーボンナノチューブの生成に適した装置。 |
JP2007091485A (ja) * | 2005-09-26 | 2007-04-12 | Sonac Kk | カーボンファイバの製造方法、基板カートリッジおよび熱cvd装置 |
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- 2008-01-11 JP JP2008004069A patent/JP5081637B2/ja not_active Expired - Fee Related
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JP2009167023A (ja) | 2009-07-30 |
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