TWI788463B - 用於形成完全自對準介層窗的選擇性膜沉積方法 - Google Patents

用於形成完全自對準介層窗的選擇性膜沉積方法 Download PDF

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TWI788463B
TWI788463B TW107141017A TW107141017A TWI788463B TW I788463 B TWI788463 B TW I788463B TW 107141017 A TW107141017 A TW 107141017A TW 107141017 A TW107141017 A TW 107141017A TW I788463 B TWI788463 B TW I788463B
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gas
substrates
substrate
exposing
silanol
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TW107141017A
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TW201930625A (zh
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坎達巴拉 Ｎ 泰伯利
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日商東京威力科創股份有限公司
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

一基板製程方法，用於形成完全自對準介層窗，該方法可於一批次處理系統之中執行，該批次處理系統能夠同時處理多個基板，其中該批次處理系統包含一製程腔室，該製程腔室內部設有圍繞著轉軸的製程空間。每個基板包含第一表面與第二表面，且此方法包含選擇性地在第一表面上形成相對於第二表面的SiO2 突起特徵部。

Description

用於形成完全自對準介層窗的選擇性膜沉積方法
相關申請案的交互參照：本申請案涉及並主張以下申請案的優先權：於2017年11月20日提交之美國臨時專利申請案第62/588,855號，其全部內容通過引用結合於此。本申請案涉及並主張以下申請案的優先權：於2018年6月15日提交之美國臨時專利申請案第62/685,847號，其全部內容通過引用結合於此。
此發明與半導體製程及半導體元件相關，並且更特別相關於用於形成完全自對準介層窗的選擇性膜沉積方法。
隨著元件大小日趨變小，半導體元件製造的複雜度也隨之提高。製造半導體元件的成本也隨之上升，因此需要具有成本效益的的解決方案與創新。隨著更小的電晶體被製造，圖案化特徵部的臨界尺寸（CD）或解析度的生產也變得愈加有挑戰性。在高度微縮的技術節點中，薄膜的選擇性沉積是圖案化的關鍵步驟。需要可在不同材質表面上提供選擇性薄膜沉積的新沉積方式。
根據一具體實施例，提供一種基板製程方法。該方法包含：（a）配置基板於製程腔室中的多個基板支撐物上，其中該製程腔室中包含圍繞著該製程腔室中的一轉軸而界定的製程空間，每個基板包含一第一表面與一第二表面，以及（b）將該複數基板支撐物繞著該轉軸旋轉。該方法更包含：（c）將基板暴露於一反應氣體中，該反應氣體包含一含金屬催化劑、（d）將基板暴露於一清潔氣體，該清潔氣體將氧化層連同其上的含金屬催化劑從第二表面上移除，以及（e）將基板暴露於含矽烷醇氣體的一沉積氣體中一段時間，使得一初始SiO2 薄膜選擇性沉積於第一表面上的含金屬催化劑之上，其中該初始SiO2 薄膜形成鄰近第二表面的一突起特徵部。此方法更包含：（f）將基板暴露於該反應氣體中，以含金屬催化劑選擇性地塗覆初始SiO2 薄膜之突起特徵部，但不塗覆該第二表面；以及（g）將基板暴露於含矽烷醇氣體的該沉積氣體中一段時間，使得一額外SiO2 薄膜選擇性沉積於該初始SiO2 薄膜之突起特徵部上之含金屬催化劑之上。
一些本發明的具體實施例提供用於形成完全自對準介層窗的選擇性膜沉積方法。此方法可以在能夠同時處理多個基板的批次處理系統中執行。一批次處理系統範例的例子示意顯示於圖2。
圖1A至圖1G透過示意性剖面圖顯示出根據一本發明具體實施例之用於形成完全自對準介層窗的選擇性膜沉積的方法。在圖1A中，該基板1已經過圖案化與平坦化，且含有一介電材料100、鑲嵌於介電材料100中的一金屬層104，以及將金屬層104與介電材料100分隔開的選用性的一擴散障蔽層102。該介電材料100具有一第一表面101，而該金屬層104具一有第二表面103。舉例而言，該介電材料100可包含一低k介電材料、SiO2、SiCOH或含金屬介電材料。在某些例子中，該介電材料100可包含SiCN或SiOC。在一例子中，該含金屬介電材料可包含一金屬氧化物、一金屬氮化物或一金屬氮氧化物。在某些例子中，該選用性的擴散障蔽層102可包含TaN、TiN、TaSiN或TiSiN。舉例而言，該金屬層104可包含Cu金屬、W金屬、Ru金屬或Co金屬。 該金屬層104頂部可以氧化金屬層107的形式被氧化。形成該氧化金屬層107可藉由將金屬層104在基板製程過程中暴露於含氧氣體中，其中包含暴露於製程系統中的背景氣體或製程氣體中的O2 及H2 O。在一例子中，該氧化金屬層107可能在CMP製程期間或之後形成。在一例子中，該氧化金屬層107可能具有開口區域而是不完整的，該開口區域露出金屬層104。
一具體實施例包含配置基板於製程腔室中複數個基板支撐物之上，其中該製程腔室中包含圍繞著一製程腔室中之轉軸而界定的製程空間。該方法更包含圍繞著該轉軸旋轉該複數個基板支撐物，並在該製程腔室中的一製程空間中，將基板暴露於具有含金屬催化劑之反應氣體。如此暴露於反應氣體可使基板1上所有吸附位置飽和。該含金屬催化劑層105（圖1B中「X」形的部分）、或部分分解的含金屬催化劑，在圖1A中所示之基板1的第一表面101與第二表面103上被吸附。如示意圖1B所示意，該含金屬催化劑層105的面密度在第二表面103上可能比在第一表面101上低。該氧化金屬層107的存在可透過減少沉積選擇性以影響後續選擇性SiO2 薄膜的沉積。依據一些本發明的具體實施例，該含金屬催化劑層105可包含鋁（Al）、鈦（Ti）、鉿（Hf）、鋯（Zr）或其組合。根據一具體實施例，該含金屬催化劑層105可選自由Al、Al2 O3 、AlN、AlON、含鋁前驅物、含鋁合金、CuAl、TiAlN、TaAlN、Ti、TiAlC、TiO2、TiON、TiN、含鈦前驅物、含鈦合金、以及其組合之群組。該含金屬催化劑層105可經由暴露該基板1於一含金屬前驅物蒸氣與選用性的含氧氣體以及/或者一含氮氣體中而形成。根據一具體實施例，此暴露步驟可進行如下：將基板1暴露於一含金屬氣體脈衝，該含金屬氣體脈衝可吸附約一單分子層厚的含金屬催化劑層105。在一例子中，該含金屬催化劑層105可包含一吸附的含金屬前驅物層，例如AlMe3 。
本發明具體實施例可利用廣泛類型的含鋁前驅物。例如，許多含鋁前驅物具有以下化學式： AlL1 L2 L3 Dx 其中L1 、L2 、L3 為個別陰離子配位基，而D為一中性予體配位基，其中x可以為0、1或2。每個L1 、L2 、L3 配位基可個別選自由烷氧化物（alkoxides）、鹵化物（halides）、芳氧化物（aryloxides）、醯胺化物（amides）、環戊二烯基（cyclopentadienyls）、烷基（alkyls）、矽基（silyls）、脒化物（amidinates）、β二酮基（β-diketonates）、酮亞胺化物（ketoiminates）、矽烷化物（silanoates）及羧酸鹽類（carboxylates）所組成之群組。D配位基可選自由醚（ethers）、呋喃（furans）、吡啶（pyridines）、吡咯類（pyrroles）、吡咯啶類（pyrrolidines）、胺類（amines）、冠醚類（crown ethers）、乙二醇醚類（glymes）及腈類（nitriles）所組成之群組。
其他含鋁前驅物例子包含：AlMe3 、AlEt3 、AlMe2 H、[Al(Os Bu)3 ]4 、Al(CH3 COCHCOCH3 )3 、AlCl3 、AlBr3 、AlI3 、Al(Oi Pr)3 、[Al(NMe2 )3 ]2 、Al(i Bu)2 Cl、Al(i Bu)3 、Al(i Bu)2 H、AlEt2 Cl、Et3 Al2 (Os Bu)3 以及 Al(THD)3 。
本發明具體實施例可利用廣泛類型的含鈦前驅物。例子包含具有「Ti-N」分子內鍵結的含鈦前驅物，包含Ti(NEt2 )4 (TDEAT)、Ti(NMeEt)4 (TEMAT)、Ti(NMe2 )4 (TDMAT)。其他含鈦前驅物的例子包含具有「Ti-C」分子內鍵結的含鈦前驅物，包含Ti(COCH3 )(η5 -C5 H5 )2 Cl、Ti(η5 -C5 H5 )Cl2 、Ti(η5 -C5 H5 )Cl3 、Ti(η5 -C5 H5 )2 Cl2 、Ti(η5 -C5 (CH3 )5 )Cl3 、Ti(CH3 )(η5 -C5 H5 )2 Cl、Ti(η5 -C9 H7 )2 Cl2 、Ti((η5 -C5 (CH3 )5 )2 Cl、Ti((η5 -C5 (CH3 )5 )2 Cl2 、Ti(η5 -C5 H5 )2 (μ-Cl)2 、Ti(η5 -C5 H5 )2 (CO)2 、Ti(CH3 )3 (η5 -C5 H5 ) 、Ti(CH3 )2 (η5 -C5 H5 )2 、Ti(CH3 )4 、Ti(η5 -C5 H5 )(η7 -C7 H7 ) 、Ti(η5 -C5 H5 )(η8 -C8 H8 ) 、Ti(C5 H5 )2 (η5 -C5 H5 )2 、Ti((C5 H5 )2 )2 (η-H)2 、Ti(η5 - C5 (CH3 )5 )2 、Ti(η5 - C5 (CH3 )5 )2 (H)2 以及Ti(CH3 )2 (η5 - C5 (CH3 )5 )2 。而TiCl4 則為一具有「鈦-鹵」鍵結的鹵化鈦前驅物之例。
此方法更包含將基板暴露於一清潔氣體中，該清潔氣體從第二表面103移除氧化金屬層107以及氧化金屬層107上之含金屬催化劑層105。上述內容示意顯示於圖1C中，其中含金屬催化劑層105保留在第一表面101上。該清潔氣體有效地在不再次氧化金屬層104的情況下剝離該氧化金屬層107，並且由於該含金屬催化劑層105與將被移除的氧化金屬層107相連接，因此在此剝離過程中更移除了此含金屬催化劑層105。該清潔氣體可包含一或多種具有化學式「R-OH」的醇類（alcohols）。一種醇類為一級醇，其中甲醇及乙醇為最簡單的成員。另一種醇類為二級醇，例如異丙醇（IPA）。
此方法更包含將基板暴露於一含矽烷醇（silanol）氣體之沉積氣體中一段時間，使得在第一表面101但並不在第二表面103上將一初始SiO2 薄膜106以一個自我限制的方式選擇性地沉積於含金屬催化劑層105上，其中該初始SiO2 薄膜106鄰近第二表面103形成一突起特徵。上述內容示意顯示於圖1D中。
該含金屬催化劑層105將從矽烷醇氣體催化初始SiO2 薄膜106的選擇性沉積，且能觀察到此催化效果直到該沉積的SiO2 薄膜106厚度至約15 nm厚（或更少，取決於製程條件），且隨後該SiO2 沉積自動停止。此暴露於沉積氣體之步驟可進行達 不會導致在金屬層104的第二表面103上有顯著的SiO2 沉積的一段時間。根據本發明的具體實施例，在不存在任何氧化劑和水解劑的情況下，該基板1暴露於含矽烷醇氣體之沉積氣體中。在一例子中，該矽烷醇氣體可選自由參（三級戊氧）矽烷醇（TPSOL, tris(tert-pentoxy) silanol）、參（三級丁氧）矽烷醇（tris(tert-butoxy) silanol）及雙（三級丁氧）（異丙氧）矽烷醇（bis(tert-butoxy)(isopropoxy) silanol）組成之群組。在一例子中，該沉積氣體由該矽烷醇氣體與一惰性氣體（如氬氣）所組成。再者，根據本發明的具體實施例，在該暴露期間該基板溫度可為約150 °C或更低。在另外一具體實施例中，該基板溫度可為約120 °C或更低。在又另外一具體實施例中，該基板溫度可為約100 °C或更低。
根據一具體實施例，將基板暴露於含有含金屬催化劑之反應氣體中、將基板暴露於清潔氣體中、以及將基板暴露於含矽烷醇氣體之沉積氣體中的順序步驟，可重複至少一次以增加基板1上該初始SiO2 薄膜106的厚度。製程條件可選擇，使得在單次暴露於沉積氣體的期間，初始SiO2 薄膜106可沉積上達至約15 nm厚，且接著該SiO2 沉積會自動停止。在某些例子中，在單次暴露於含一矽烷醇氣體之沉積氣體期間，可沉積小於約15 nm、小於約10 nm或小於約5 nm之初始SiO2 薄膜106。在一例子中，在將基板暴露於含有含金屬催化劑之反應氣體中、將基板暴露於清潔氣體中、以及將基板暴露於含矽烷醇氣體之沉積氣體中的順序步驟期間，該基板支撐物可繞著製程腔室中之轉軸以約100 rpm或更低的轉速旋轉。
此方法更包含將基板暴露於反應氣體中，而以含金屬催化劑層105選擇性地塗覆該初始SiO2 薄膜106之突起特徵而不塗覆第二表面103。上述內容示意顯示於圖1E中。可選擇製程腔室中該複數個基板支撐物的轉速以及暴露參數，使得該具有含金屬催化劑的反應氣體優先暴露於初始SiO2 薄膜106上表面，但不在第二表面103上表面。 該選擇性塗覆步驟至少一部份原因是由於該初始SiO2 薄膜106於第二表面103上形成一突起特徵，且反應氣體不擴散進入突起特徵部之間的空間並塗覆於第二表面103。此外，由於該金屬層104沒有被氧化，因此在第二表面103上該含金屬催化劑的吸附會被減少或預防。
此後，此方法更包含將基板暴露於含矽烷醇（silanol）氣體之沉積氣體中一段時間，使得一額外SiO2 薄膜108選擇性地沉積在位於初始SiO2 薄膜106突起特徵部上之含金屬催化劑層105上。上述內容示意顯示於圖1F中。由於在第二表面103上，該含金屬催化劑的吸附會被減少或預防，當沉積額外SiO2 薄膜108於初始SiO2 薄膜106時，順序步驟中將基板暴露於清潔氣體的步驟可被省略。
根據一具體實施例，將基板暴露於含有含金屬催化劑之反應氣體中及將基板暴露於含矽烷醇氣體之沉積氣體中以選擇性沉積額外SiO2 薄膜108之順序步驟可重複至少一次，以增加在初始SiO2 薄膜106上該額外SiO2 薄膜108的厚度。上述內容示意顯示於圖1G中。在一例子中，該額外SiO2 薄膜108的厚度可為約50 nm至100 nm 之間。在一例子中，在將基板暴露於含有含金屬催化劑之反應氣體中及將基板暴露於含矽烷醇氣體之沉積氣體中之順序步驟的期間，該基板支撐物可以高於100 rpm的轉速繞著該轉軸旋轉。可選擇製程條件，使得在單次暴露於沉積氣體期間，額外SiO2 薄膜108可沉積上達約15 nm厚，且接著該SiO2 沉積會自動停止。在某些例子中，在單次暴露於含矽氧烷氣體之沉積氣體期間，可沉積小於約15 nm、小於約10 nm或小於約5 nm之額外SiO2 薄膜108。
如在圖1G中可見，初始SiO2 薄膜106與額外SiO2 薄膜108形成完全自對準介層窗110於金屬層104之上。該完全自對準介層窗110亦可被稱為空孔（holes）或溝槽（trenches）。該方法提供選擇性膜沉積以在高度微縮的技術節點中形成完全自對準介層窗。舉例而言，該介層窗可以具有小於約50 nm、小於約20 nm、小於約10 nm或小於約5 nm的寬度。這些介層窗對於使用傳統微影方法來製造而言是有挑戰性的。
圖2示意顯示一根據本發明的具體實施例用以處理基板之批次處理系統。該批次處理系統10係配置以處理多個基板200，並且包含一輸入/輸出臺12、一加載/鎖定臺14、一製程腔室16、以及一插設在加載/鎖定臺14與製程腔室16之間的傳送腔室18。該批次處理系統10以簡化的方式顯示，可包含額外結構，例如為本發明所屬領域中具有通常知識者所知的將加載/鎖定臺14與傳送腔室18連結以及將製程腔室16與傳送腔室18連結的額外真空隔離牆。該輸入/輸出臺12處於或接近一大氣壓下（例如760托），適於接收晶圓匣20（如前開式晶圓傳送盒（FOUPs））。該晶圓匣20之尺寸與形狀被設計為用以容納複數基板200，例如具有半徑諸如200或300毫米的半導體晶圓。
該加載/鎖定臺14適於從大氣壓抽空至一真空壓力，以及從真空壓力通氣至大氣壓力，同時將製程腔室16與傳送腔室18與之隔離且持續維持在真空壓力下。該加載/鎖定臺14持有從輸入/輸出臺12的大氣壓力環境引入的多個晶圓匣20。該加載/鎖定臺14包含平臺21、23，其各支撐晶圓匣20其中一者且可以垂直分度以協助晶圓從製程腔室16傳送及傳送至製程腔室16。
一晶圓傳送機構22在真空下將基板200從位在加載/鎖定臺14中之晶圓匣20的其中之一經過傳送腔室18傳送進入製程腔室16。另一晶圓傳送機構24在真空下將已在製程腔室16處理之基板200從製程腔室16經過傳送腔室18而傳送至晶圓匣20。該晶圓傳送機構22與24，其相互獨立作業以提高批次處理系統10的產出量，可為一般用於取放物操作之水平多關節機械手臂（SCARA）。晶圓傳送機構22、24包含被設置用以在傳送過程中固定基板200的末端效應器。該製程腔室16可包含各別的第一及第二可密封端口（未示於圖上），其分別被晶圓傳送機構22、24用以進入製程腔室16中的製程空間。當基板製程正在製程腔室16中進行時，該出入端口會被密封。該晶圓傳送機構22於圖2繪示成將未經過製程之基板200從位在加載/鎖定臺14之平臺21上的晶圓匣20傳送至製程腔室16。晶圓傳送機構24於圖2繪示成將已經過製程之基板200從製程腔室16傳送至位在加載/鎖定臺14上之平臺23上的晶圓匣20。
該晶圓傳送機構24亦可將已經過製程之基板200從製程腔室16中提取至一檢測臺26以查驗，或是提取至用以後處理基板200的低壓冷卻的一冷卻臺28。在該檢測臺26中執行的製程可包含但不限於用以量測膜厚以及/或者薄膜組成的傳統技術，如橢圓偏振儀，以及用以汙染控制的顆粒量測技術。
該批次處理系統10裝有編程以控制及編排批次處理系統10運作的一系統控制器36。該系統控制器36一般包含一中央處理器（CPU）以控制各種系統功能、腔室製程以及支援硬體（例如偵檢器、機械人、馬達、氣體源硬體等等），以及監測系統與腔室製程（例如腔室溫度、製程順序產出率、腔室製程時間、輸入/輸出訊號等等）。軟體指令與數據可被編碼且儲存在記憶體中以命令CPU。一可經由該系統控制器36執行之軟體程式決定哪一個作業要執行於基板200上，包含相關於對製程順序作業以及各種腔室製程配方步驟的執行與監測的作業。
一基座48配置於該製程腔室16中。該基座48包含配置於基座48上表面的多個圓形基板支撐物52。每個基板支撐物52配置用以將基板200的至少其中之一保持在一位置，該位置係徑向位於製程腔室16的周圍側壁40之內。該基板支撐物52的個數範圍舉例而言可從2至8個。然而，在發明所屬領域中具有通常知識者會了解，取決於基板200的尺寸以及基座48的尺寸，該基座48可配置任何需要之數量的基板支撐物52。儘管本發明的具體實施例中描述一具有圓形或環狀幾何形狀的基板支撐物52，在發明所屬領域中具有通常知識者會了解該基板支撐物52可以為任何需要的形狀以容納適當形狀的基板。
該批次處理系統10可被設置為用以處理200 mm之基板、300 mm之基板或更大尺寸的圓形基板，該尺寸會反映在基板支撐物52的尺寸上。事實上，如精於本項技術者所知，可思及該批次處理系統10可以被設置用以處理基板、晶圓，或液晶顯示器，無論其尺寸為何。因此，雖然本發明的實施態樣就為半導體基板的基板200之製程加以描述，但本發明並不限於此。
該基板支撐物52以一轉軸54為中心以均勻半徑周向分布於基座48之上。該基板支撐物52具有繞轉軸54大致等角度的間隔，該轉軸54基本上與方位角軸42共線或共軸，但本發明並不限於此。
當基板200在製程腔室16中進行製程時，該基座48可能會持續旋轉並可造成繞該轉軸54的恆定的角速度。或者，該角速度可能依據基座48相對於任意參考點的角度方向而隨之變化。
隔板68、70、72、74將製程腔室16劃分為多個製程空間76、78、80、82，其可允許基座48以及基板支撐物52繞著轉軸54自由地旋轉。隔板68、70、72、74相對於該轉軸54徑向延伸至周圍側壁40。儘管代表性地顯示四隔板68、70、72、74，發明所屬領域中具有通常知識者會了解該製程腔室16可以用任何合適數量的複數個隔板細分出不同於四之數量的製程空間。根據另一具體實施例，隔板68、70、72、74可省略而吹掃氣體可流入位於製程腔室16中該複數個製程空間76、78、80、82其中一或多者之間。根據一具體實施例，一或多個製程空間76、78、80、82可被用來做氣體吹掃。
該批次處理系統10更包含一吹掃氣體供應系統84，該吹掃氣體供應系統84經由氣體管路連接至穿透周圍側壁40的氣體噴嘴30、34。該吹掃氣體供應系統84設置用以引入一吹掃氣體氣流至製程空間76和80。被引入製程空間76和80的吹掃氣體可包含惰性氣體，如稀有氣體（例如氦氣、氖氣、氬氣、氙氣、氪氣），或氮氣或氫氣。在基板製程期間，吹掃氣體可被不斷地引入製程空間76和80以提供一氣幕或障蔽,，其預防或至少顯著地限制第一與第二製程材料在製程空間78和82之間傳送。該吹掃氣體亦可在製程空間76和80中提供一惰性氣體環境，使得任何基板200承載的製程材料層當在基座48上傳送經過製程空間76、80時基本上不變。製程空間78並置於製程空間76、80之間且製程空間82並置於製程空間76、80之間，使得製程空間76、80將製程空間78與82分隔開以使得第一及第二製程材料相互隔離。
批次處理系統10更包含：一第一製程材料供應系統90，該第一製程材料供應系統90經由氣體管路連接至穿透周圍側壁40的氣體噴嘴32；以及一第二製程材料供應系統92，該第二製程材料供應系統92經由氣體管路連接至穿透周圍側壁40的氣體噴嘴38。該第一製程材料供應系統90被設置用以引入一第一製程材料至製程空間78，而第二製程材料供應系統92被設置用以引入一第二製程材料至製程空間82。該第一與第二製程材料供應系統90、92可個別包含一或多種材料來源、一或多個加熱器、一或多個壓力控制裝置、一或多個流量控制裝置、一或多個過濾器、一或多個氣閥，或者一或多個流量感測器，如在如此製程材料供應系統中通常可見者。
舉例而言，該第一製程材料可包含一含有一含金屬催化劑之反應氣體。舉例而言，該反應氣體可在無論有或沒有載氣的協助下以氣相傳送至製程空間78。舉例而言，該第二製程材料可包括含有矽烷醇氣體之沉積氣體。舉例而言，該沉積氣體可在無論有或沒有載氣的協助下以氣相傳送至製程空間82。
根據一具體實施例，該第一製程材料供應系統90、第二製程材料供應系統92以及吹掃氣體供應系統84其中一或多者可更配置用以注入一清潔氣體進入一或多個製程空間76、78、80、82。根據一具體實施例，該清洗氣體可包含一或多種醇類。
當基座48繞轉軸54旋轉時，基板支撐物52繞基座48周緣的配置，允許每個基板200可依序暴露於各個製程空間76、78、80、82之中的不同環境中。舉例來說，當基座48旋轉通過一2π弧度（360°）之封閉路徑，每個基板200將依序在第一製程空間78環境中暴露於第一製程材料，然後暴露於第二製程空間80中由吹掃氣體構成之環境中，再到第三製程空間82中暴露於第二製程材料，最後暴露於第四製程空間76中由吹掃氣體構成之環境中。按照將在各基板200上沉積之薄膜特性，每個基板200分別在每個製程空間76、78、80、82中有足以形成該薄膜的期望留置時間。
該沉積製程是一種沉積技術，其中透過交替和依序引入適當的氣相前驅物來控制在基板200上薄膜或其一部分的每個原子層沉積，該氣相前驅物以一自我限制的方式反應以漸增形成或建構該薄膜。在第一製程空間78中，第一製程材料分子與每個基板200的上表面鍵結（化學性地，透過吸收、吸附等等）以形成一第一製程材料的單分子層或單分子層的一部分。在在第三製程空間82中，第二製程材料分子與各個依序的基板200上之第一製程材料分子反應。隨著基板200輪轉經過該第一與第三製程空間78、82，這些按次序連續暴露於該第一與第二製程材料中的步驟被重複。第一與第三製程空間78、82中第一與第二材料的環境分別藉由在第二與第四製程空間80、76中化學無反應性的吹掃氣體而互相隔離。該基板200可被加熱至製程溫度以促使沉積製程進行。
用於形成完全自對準介層窗的選擇性膜沉積方法已揭露於各種具體實施例中。出於說明與描述的目的，本發明的具體實施例已在前述內容表明。此內容並非旨在全面詳述或限制本發明於所揭露內容於此精確形式。此描述與後續申請專利範圍中包含之用語僅供描述性目的而不應解釋為其限制。與此發明相關之所屬領域中具有通常知識者可了解，鑒於上述教示，許多調整與改變是可行的。此發之所屬領域中具有通常知識者將辨認出所示圖中各種元件的各種等效組合及替換。因此，上述旨在說明本發明的範圍不受細節描述所限，而是受隨附在此處之申請專利範圍所限。
1‧‧‧基板 10‧‧‧批次處理系統 12‧‧‧輸入/輸出臺 14‧‧‧加載/鎖定臺 16‧‧‧製程腔室 18‧‧‧傳送腔室 20‧‧‧晶圓匣 21‧‧‧平臺 22‧‧‧晶圓傳送機構 23‧‧‧平臺 24‧‧‧晶圓傳送機構 26‧‧‧檢測臺 28‧‧‧冷卻臺 30‧‧‧氣體噴嘴 32‧‧‧氣體噴嘴 34‧‧‧氣體噴嘴 36‧‧‧系統控制器 38‧‧‧氣體噴嘴 40‧‧‧周圍側壁 42‧‧‧方位角軸 48‧‧‧基座 52‧‧‧基板支撐物 54‧‧‧轉軸 68‧‧‧隔板 70‧‧‧隔板 72‧‧‧隔板 74‧‧‧隔板 76‧‧‧製程空間 78‧‧‧製程空間 80‧‧‧製程空間 82‧‧‧製程空間 84‧‧‧吹掃氣體供應系統 90‧‧‧第一製程材料供應系統 92‧‧‧第二製程材料供應系統 100‧‧‧介電材料 101‧‧‧第一表面 102‧‧‧擴散障蔽層 103‧‧‧第二表面 104‧‧‧金屬層 105‧‧‧含金屬催化劑層 106‧‧‧初始SiO2薄膜 107‧‧‧氧化金屬層 108‧‧‧額外SiO2薄膜 110‧‧‧介層窗 200‧‧‧基板
參考後續實施方式章節以及隨附圖式，將能更完整了解本發明的具體實施例且許多其伴隨的優點也變得顯而易見：
圖1A–1G透過示意性剖面圖顯示根據本發明的具體實施例之用於形成完全自對準介層窗的選擇性膜沉積方法；以及
圖2示意顯示根據本發明的具體實施例之用以處理基板的批次處理系統。
1‧‧‧基板
100‧‧‧介電材料
102‧‧‧擴散障蔽層
103‧‧‧第二表面
104‧‧‧金屬層
106‧‧‧初始SiO2薄膜
108‧‧‧額外SiO2薄膜
110‧‧‧介層窗

Claims (20)

  1. 一種基板製程方法，包含： （a） 配置基板於一製程腔室中的複數基板支撐物上，其中該製程腔室包含製程空間，該製程空間係圍繞著該製程腔室中的一轉軸加以界定，該等基板每一者包含一第一表面與一第二表面； （b） 將該複數基板支撐物繞該轉軸旋轉； （c） 將該等基板暴露於含有含金屬催化劑之反應氣體中； （d） 將該等基板暴露於一清潔氣體，該清潔氣體將氧化層及該氧化層上的該含金屬催化劑從該第二表面上移除； （e） 將該等基板暴露於含矽烷醇氣體之沉積氣體達一段時間，以選擇性沉積一初始SiO2 薄膜於該第一表面上的該含金屬催化劑之上，其中該初始SiO2 薄膜形成鄰近該第二表面的一突起特徵部； （f） 將該等基板暴露於該反應氣體中，而以該含金屬催化劑選擇性地塗覆於該初始SiO2 薄膜之該突起特徵部，但不塗覆該第二表面；以及 （g） 將該等基板暴露於含該矽烷醇氣體之該沉積氣體達一段時間，以選擇性沉積一額外SiO2 薄膜於位於該初始SiO2 薄膜之該突起特徵部上之該含金屬催化劑之上。
  2. 如申請專利範圍第1項之基板製程方法，其中該第一表面包含一介電材料，且該第二表面包含一金屬層。
  3. 如申請專利範圍第1項之基板製程方法，更包含： 在執行步驟（f）之前，將步驟（c）-（e）重複至少一遍以增加該初始SiO2 薄膜之厚度。
  4. 如申請專利範圍第1項之基板製程方法，更包含： 重複步驟（f）與（g）至少一遍以增加在該初始SiO2 薄膜上之該額外SiO2 薄膜的厚度。
  5. 如申請專利範圍第1項之基板製程方法，其中步驟（f）與（g）在沒有將該等基板暴露於清潔氣體的一中介步驟的情況下加以執行。
  6. 如申請專利範圍第1項之基板製程方法，其中該反應氣體包含鋁（Al）、鈦（Ti）、鉿（Hf）、鋯（Zr）或其組合。
  7. 如申請專利範圍第1項之基板製程方法，其中該反應氣體包含三甲鋁（AlMe3 ）。
  8. 如申請專利範圍第1項之基板製程方法，其中將該等基板暴露於含矽烷醇氣體之該沉積氣體中之該步驟，係於不存在任何氧化劑和水解劑的情況下，執行於約150°C或更低的基板溫度下。
  9. 如申請專利範圍第1項之基板製程方法，其中在該等暴露步驟中，該基板溫度約為100°C或更低。
  10. 如申請專利範圍第1項之基板製程方法，其中該沉積氣體由該矽烷醇氣體與一惰性氣體組成。
  11. 如申請專利範圍第1項之基板製程方法，其中該矽烷醇氣體選自由參（三級戊氧）矽烷醇（tris(tert-pentoxy) silanol）、參（三級丁氧）矽烷醇（tris(tert-butoxy) silanol）以及雙（三級丁氧）（異丙氧）矽烷醇（bis(tert-butoxy)(isopropoxy) silanol）組成之群組。
  12. 如申請專利範圍第1項之基板製程方法，其中該初始與額外SiO2 薄膜以一個自我限制的方式沉積於該含金屬催化劑上。
  13. 如申請專利範圍第1項之基板製程方法，其中該初始SiO2 薄膜的厚度為約15 nm 或更少。
  14. 如申請專利範圍第1項之基板製程方法，其中該初始SiO2 薄膜是藉由依序執行步驟（c）-（e）僅一次而加以沉積。
  15. 如申請專利範圍第1項之基板製程方法，其中該額外SiO2 薄膜的厚度為約50 nm至約100 nm 之間。
  16. 如申請專利範圍第1項之基板製程方法，其中該清潔氣體包含醇類。
  17. 如申請專利範圍第16項之基板製程方法，其中該醇類包含異丙醇、甲醇或乙醇。
  18. 如申請專利範圍第1項之基板製程方法，其中該步驟（c）-（e）包含： 注入該反應氣體進入一第一製程空間，該第一製程空間藉由繞該轉軸的第一夾角加以界定； 在每個完整旋轉的期間，在第一製程空間中，將該等基板每一者的該第一表面與該第二表面暴露於該反應氣體之中； 注入該清潔氣體進入一第二製程空間，該第二製程空間藉由繞該轉軸的第二夾角加以界定且與該第一製程空間分隔開； 在每個完整旋轉的期間，將該等基板每一者的該第一表面與該第二表面暴露於該清潔氣體之中；以及 注入含該矽烷醇氣體之該沉積氣體進入一第三製程空間，該第三製程空間藉由繞該轉軸的第三夾角加以界定且與該第一和第二製程空間分隔開。
  19. 如申請專利範圍第18項之基板製程方法，更包含： 藉由重複地將該等基板旋轉經過該第一、第二及第三製程空間，將該等基板每一者的該第一表面與該第二表面再次暴露於該反應氣體、清潔氣體以及沉積氣體之中，以漸增地沉積該初始SiO2 薄膜於該等基板每一者之上。
  20. 如申請專利範圍第1項之基板製程方法，其中該步驟（f）-（g）包含： 注入該反應氣體進入一第一製程空間，該第一製程空間藉由繞該轉軸的第一夾角加以界定； 在每個完整旋轉的期間，在第一製程空間中，將該等基板每一者的該第一表面暴露於該反應氣體之中； 注入含該矽烷醇氣體之該沉積氣體進入一第二製程空間，該第二製程空間藉由繞該轉軸的第二夾角加以界定且與該第一製程空間分隔開；以及 藉由重複地將該等基板旋轉經過該第一與第二製程空間，將該等基板每一者的該第一表面與該第二表面再次暴露於該反應氣體及該沉積氣體之中，以漸增地沉積該額外SiO2 薄膜於該等基板每一者之上。
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