JP2007529899A5 - - Google Patents
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- Publication number
- JP2007529899A5 JP2007529899A5 JP2007503903A JP2007503903A JP2007529899A5 JP 2007529899 A5 JP2007529899 A5 JP 2007529899A5 JP 2007503903 A JP2007503903 A JP 2007503903A JP 2007503903 A JP2007503903 A JP 2007503903A JP 2007529899 A5 JP2007529899 A5 JP 2007529899A5
- Authority
- JP
- Japan
- Prior art keywords
- hard mask
- layer
- exposing
- substrate holder
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 13
- 229910052760 oxygen Inorganic materials 0.000 claims 10
- 239000002344 surface layer Substances 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 8
- 239000000463 material Substances 0.000 claims 8
- 239000001301 oxygen Substances 0.000 claims 8
- 239000010409 thin film Substances 0.000 claims 3
- 239000006117 anti-reflective coating Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/801,571 US7291446B2 (en) | 2004-03-17 | 2004-03-17 | Method and system for treating a hard mask to improve etch characteristics |
| PCT/US2005/004047 WO2005091796A2 (en) | 2004-03-17 | 2005-02-10 | Method and system for treating a hard mask to improve etch characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007529899A JP2007529899A (ja) | 2007-10-25 |
| JP2007529899A5 true JP2007529899A5 (enExample) | 2008-03-27 |
Family
ID=34986730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007503903A Withdrawn JP2007529899A (ja) | 2004-03-17 | 2005-02-10 | エッチング特性を改良するためのハードマスクを処理する方法およびシステム。 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7291446B2 (enExample) |
| JP (1) | JP2007529899A (enExample) |
| TW (1) | TWI295815B (enExample) |
| WO (1) | WO2005091796A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7153780B2 (en) * | 2004-03-24 | 2006-12-26 | Intel Corporation | Method and apparatus for self-aligned MOS patterning |
| US7497959B2 (en) | 2004-05-11 | 2009-03-03 | International Business Machines Corporation | Methods and structures for protecting one area while processing another area on a chip |
| KR100694412B1 (ko) * | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
| TW200806567A (en) * | 2006-07-26 | 2008-02-01 | Touch Micro System Tech | Method of deep etching |
| KR100829603B1 (ko) * | 2006-11-23 | 2008-05-14 | 삼성전자주식회사 | 에어 갭을 갖는 반도체 소자의 제조 방법 |
| JP2009200095A (ja) * | 2008-02-19 | 2009-09-03 | Tokyo Electron Ltd | 薄膜およびその薄膜を用いた半導体装置の製造方法 |
| US8980706B2 (en) * | 2008-09-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double treatment on hard mask for gate N/P patterning |
| JP5466468B2 (ja) * | 2009-10-05 | 2014-04-09 | 旭化成イーマテリアルズ株式会社 | ドライエッチング方法 |
| US9058983B2 (en) | 2013-06-17 | 2015-06-16 | International Business Machines Corporation | In-situ hardmask generation |
| US9229326B2 (en) * | 2014-03-14 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
| US10043672B2 (en) * | 2016-03-29 | 2018-08-07 | Lam Research Corporation | Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask |
| US10690821B1 (en) * | 2018-12-14 | 2020-06-23 | Applied Materials, Inc. | Methods of producing slanted gratings |
| US11424123B2 (en) * | 2020-02-25 | 2022-08-23 | Tokyo Electron Limited | Forming a semiconductor feature using atomic layer etch |
| KR20210126214A (ko) * | 2020-04-10 | 2021-10-20 | 에스케이하이닉스 주식회사 | 반도체 장치 제조방법 |
| JP7773277B2 (ja) * | 2021-04-14 | 2025-11-19 | 東京エレクトロン株式会社 | 基板処理方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4493855A (en) * | 1982-12-23 | 1985-01-15 | International Business Machines Corporation | Use of plasma polymerized organosilicon films in fabrication of lift-off masks |
| JPH0775226B2 (ja) * | 1990-04-10 | 1995-08-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | プラズマ処理方法及び装置 |
| US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
| US7816188B2 (en) * | 2001-07-30 | 2010-10-19 | Sandisk 3D Llc | Process for fabricating a dielectric film using plasma oxidation |
| JP2003209046A (ja) * | 2002-01-16 | 2003-07-25 | Mitsubishi Electric Corp | レジストパターン形成方法および半導体装置の製造方法 |
| US6984529B2 (en) * | 2003-09-10 | 2006-01-10 | Infineon Technologies Ag | Fabrication process for a magnetic tunnel junction device |
-
2004
- 2004-03-17 US US10/801,571 patent/US7291446B2/en not_active Expired - Fee Related
-
2005
- 2005-02-10 JP JP2007503903A patent/JP2007529899A/ja not_active Withdrawn
- 2005-02-10 WO PCT/US2005/004047 patent/WO2005091796A2/en not_active Ceased
- 2005-03-08 TW TW094106981A patent/TWI295815B/zh not_active IP Right Cessation