JP2006520104A5 - - Google Patents

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Publication number
JP2006520104A5
JP2006520104A5 JP2006508689A JP2006508689A JP2006520104A5 JP 2006520104 A5 JP2006520104 A5 JP 2006520104A5 JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006508689 A JP2006508689 A JP 2006508689A JP 2006520104 A5 JP2006520104 A5 JP 2006520104A5
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JP
Japan
Prior art keywords
immersion
layer
carbon dioxide
photoresist layer
fluid
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Pending
Application number
JP2006508689A
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English (en)
Japanese (ja)
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JP2006520104A (ja
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Priority claimed from US10/386,356 external-priority patent/US7029832B2/en
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Publication of JP2006520104A publication Critical patent/JP2006520104A/ja
Publication of JP2006520104A5 publication Critical patent/JP2006520104A5/ja
Pending legal-status Critical Current

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JP2006508689A 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法 Pending JP2006520104A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/386,356 US7029832B2 (en) 2003-03-11 2003-03-11 Immersion lithography methods using carbon dioxide
PCT/US2004/003556 WO2004081666A1 (en) 2003-03-11 2004-01-23 Immersion lithography methods using carbon dioxide

Publications (2)

Publication Number Publication Date
JP2006520104A JP2006520104A (ja) 2006-08-31
JP2006520104A5 true JP2006520104A5 (enExample) 2007-03-08

Family

ID=32961680

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Application Number Title Priority Date Filing Date
JP2006508689A Pending JP2006520104A (ja) 2003-03-11 2004-01-23 二酸化炭素を使用した浸漬リソグラフィ方法

Country Status (5)

Country Link
US (1) US7029832B2 (enExample)
EP (1) EP1602012A1 (enExample)
JP (1) JP2006520104A (enExample)
TW (1) TW200504864A (enExample)
WO (1) WO2004081666A1 (enExample)

Families Citing this family (153)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
SG121818A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
KR101036114B1 (ko) * 2002-12-10 2011-05-23 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
WO2004053952A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
SG158745A1 (en) * 2002-12-10 2010-02-26 Nikon Corp Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP1598855B1 (en) * 2003-02-26 2015-04-22 Nikon Corporation Exposure apparatus and method, and method of producing apparatus
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004090956A1 (ja) * 2003-04-07 2004-10-21 Nikon Corporation 露光装置及びデバイス製造方法
JP4488004B2 (ja) * 2003-04-09 2010-06-23 株式会社ニコン 液浸リソグラフィ流体制御システム
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN101061429B (zh) * 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101323993B1 (ko) 2003-04-10 2013-10-30 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
CN1771463A (zh) * 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) * 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TWI614794B (zh) 2003-05-23 2018-02-11 Nikon Corp 曝光方法及曝光裝置以及元件製造方法
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2453465A3 (en) * 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101520591B1 (ko) * 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI543235B (zh) * 2003-06-19 2016-07-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7236232B2 (en) * 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
JP4697138B2 (ja) * 2003-07-08 2011-06-08 株式会社ニコン 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
EP1643543B1 (en) * 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP1650787A4 (en) * 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) * 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
CN104122760B (zh) 2003-07-28 2017-04-19 株式会社尼康 曝光装置、器件制造方法
EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
US20050022731A1 (en) * 2003-07-30 2005-02-03 Bernard Petrillo Immersion optics fluid dispenser
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG145780A1 (en) * 2003-08-29 2008-09-29 Nikon Corp Exposure apparatus and device fabricating method
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
KR101319108B1 (ko) * 2003-09-29 2013-10-17 가부시키가이샤 니콘 투영 노광 장치, 투영 노광 방법 및 디바이스 제조 방법
EP1670043B1 (en) 2003-09-29 2013-02-27 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101111364B1 (ko) 2003-10-08 2012-02-27 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광방법, 디바이스 제조 방법
WO2005036623A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
EP3139214B1 (en) 2003-12-03 2019-01-30 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
DE602004030481D1 (de) * 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
KR101111363B1 (ko) * 2003-12-15 2012-04-12 가부시키가이샤 니콘 투영노광장치 및 스테이지 장치, 그리고 노광방법
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
KR101281775B1 (ko) 2003-12-19 2013-07-15 더 유니버시티 오브 노쓰 캐롤라이나 엣 채플 힐 소프트 또는 임프린트 리소그래피를 이용하여 분리된마이크로- 및 나노- 구조를 제작하는 방법
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1706793B1 (en) 2004-01-20 2010-03-03 Carl Zeiss SMT AG Exposure apparatus and measuring device for a projection lens
US7391501B2 (en) * 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076321A1 (ja) 2004-02-03 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法
US7741012B1 (en) * 2004-03-01 2010-06-22 Advanced Micro Devices, Inc. Method for removal of immersion lithography medium in immersion lithography processes
JP4220423B2 (ja) * 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
JP4525676B2 (ja) 2004-03-25 2010-08-18 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) * 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP3981368B2 (ja) * 2004-05-17 2007-09-26 松下電器産業株式会社 パターン形成方法
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005119368A2 (en) 2004-06-04 2005-12-15 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101342330B1 (ko) 2004-07-12 2013-12-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4264038B2 (ja) * 2004-07-13 2009-05-13 パナソニック株式会社 液浸露光用の液体及びパターン形成方法
JP4983257B2 (ja) * 2004-08-18 2012-07-25 株式会社ニコン 露光装置、デバイス製造方法、計測部材、及び計測方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7397533B2 (en) * 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4696558B2 (ja) * 2005-01-07 2011-06-08 Ｊｓｒ株式会社 フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
SG124351A1 (en) * 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG124359A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2006084641A2 (en) * 2005-02-10 2006-08-17 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US7399581B2 (en) 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7385673B2 (en) * 2005-06-10 2008-06-10 International Business Machines Corporation Immersion lithography with equalized pressure on at least projection optics component and wafer
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US7571992B2 (en) * 2005-07-01 2009-08-11 Xerox Corporation Pressure compensation structure for microelectromechanical systems
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US7495743B2 (en) * 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
JP2008041741A (ja) * 2006-08-02 2008-02-21 Matsushita Electric Ind Co Ltd パターン形成方法
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
TWI389551B (zh) * 2007-08-09 2013-03-11 Mstar Semiconductor Inc 迦瑪校正裝置
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US20090246706A1 (en) * 2008-04-01 2009-10-01 Applied Materials, Inc. Patterning resolution enhancement combining interference lithography and self-aligned double patterning techniques
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
JP6450405B2 (ja) 2014-03-14 2019-01-09 サエス・ピュア・ガス・インコーポレイテッドＳａｅｓ Ｐｕｒｅ Ｇａｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 超高純度（ｕｈｐ）二酸化炭素浄化のためのシステム及び方法
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
KR102225957B1 (ko) * 2018-09-12 2021-03-11 세메스 주식회사 기판 처리 장치
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
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KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) * 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JP2000085025A (ja) 1998-09-09 2000-03-28 Nikon Corp 光学薄膜の製造方法及び光学薄膜
US6358673B1 (en) * 1998-09-09 2002-03-19 Nippon Telegraph And Telephone Corporation Pattern formation method and apparatus
EP1131677B1 (en) 1998-09-23 2005-08-03 E.I. Dupont De Nemours And Company Photoresists, polymers and processes for microlithography
KR20020012206A (ko) 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
US6509138B2 (en) * 2000-01-12 2003-01-21 Semiconductor Research Corporation Solventless, resistless direct dielectric patterning
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
US6683008B1 (en) * 2002-11-19 2004-01-27 International Business Machines Corporation Process of removing ion-implanted photoresist from a workpiece

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