TW200504864A - Immersion lithography methods using carbon dioxide - Google Patents

Immersion lithography methods using carbon dioxide

Info

Publication number
TW200504864A
TW200504864A TW093102166A TW93102166A TW200504864A TW 200504864 A TW200504864 A TW 200504864A TW 093102166 A TW093102166 A TW 093102166A TW 93102166 A TW93102166 A TW 93102166A TW 200504864 A TW200504864 A TW 200504864A
Authority
TW
Taiwan
Prior art keywords
carbon dioxide
immersion lithography
immersion
lithography methods
layer
Prior art date
Application number
TW093102166A
Other languages
English (en)
Chinese (zh)
Inventor
Jason P Rolland
Joseph M Desimone
Original Assignee
Univ North Carolina
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina filed Critical Univ North Carolina
Publication of TW200504864A publication Critical patent/TW200504864A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW093102166A 2003-03-11 2004-01-30 Immersion lithography methods using carbon dioxide TW200504864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/386,356 US7029832B2 (en) 2003-03-11 2003-03-11 Immersion lithography methods using carbon dioxide

Publications (1)

Publication Number Publication Date
TW200504864A true TW200504864A (en) 2005-02-01

Family

ID=32961680

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102166A TW200504864A (en) 2003-03-11 2004-01-30 Immersion lithography methods using carbon dioxide

Country Status (5)

Country Link
US (1) US7029832B2 (enExample)
EP (1) EP1602012A1 (enExample)
JP (1) JP2006520104A (enExample)
TW (1) TW200504864A (enExample)
WO (1) WO2004081666A1 (enExample)

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US12183604B2 (en) 2020-07-07 2024-12-31 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
US12474638B2 (en) 2020-01-15 2025-11-18 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12474640B2 (en) 2023-03-17 2025-11-18 Lam Research Corporation Integration of dry development and etch processes for EUV patterning in a single process chamber
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
US12601976B2 (en) 2023-07-27 2026-04-14 Lam Research Corporation All-in-one dry development for metal-containing photoresist

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WO2004081666A1 (en) 2004-09-23

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