JP2005513764A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005513764A5 JP2005513764A5 JP2003551823A JP2003551823A JP2005513764A5 JP 2005513764 A5 JP2005513764 A5 JP 2005513764A5 JP 2003551823 A JP2003551823 A JP 2003551823A JP 2003551823 A JP2003551823 A JP 2003551823A JP 2005513764 A5 JP2005513764 A5 JP 2005513764A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulator
- layer
- polysilicon
- fuse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 49
- 229920005591 polysilicon Polymers 0.000 claims 49
- 238000000034 method Methods 0.000 claims 37
- 239000012212 insulator Substances 0.000 claims 33
- 229910052751 metal Inorganic materials 0.000 claims 29
- 239000002184 metal Substances 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 21
- 229910052710 silicon Inorganic materials 0.000 claims 21
- 239000010703 silicon Substances 0.000 claims 21
- 238000000137 annealing Methods 0.000 claims 19
- 238000005530 etching Methods 0.000 claims 14
- 229920002120 photoresistant polymer Polymers 0.000 claims 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 229910017052 cobalt Inorganic materials 0.000 claims 4
- 239000010941 cobalt Substances 0.000 claims 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052759 nickel Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- 229910019001 CoSi Inorganic materials 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000009966 trimming Methods 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/014,064 US6756255B1 (en) | 2001-12-10 | 2001-12-10 | CMOS process with an integrated, high performance, silicide agglomeration fuse |
| PCT/US2002/039482 WO2003050858A1 (en) | 2001-12-10 | 2002-12-09 | Cmos process with an integrated, high performance, silicide agglomeration fuse |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005513764A JP2005513764A (ja) | 2005-05-12 |
| JP2005513764A5 true JP2005513764A5 (enExample) | 2006-02-02 |
| JP4651941B2 JP4651941B2 (ja) | 2011-03-16 |
Family
ID=21763328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003551823A Expired - Fee Related JP4651941B2 (ja) | 2001-12-10 | 2002-12-09 | 集積型高性能シリサイド凝集ヒューズを有する相補型金属酸化膜半導体の形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6756255B1 (enExample) |
| EP (1) | EP1451860B1 (enExample) |
| JP (1) | JP4651941B2 (enExample) |
| KR (1) | KR100957601B1 (enExample) |
| CN (1) | CN100352009C (enExample) |
| AU (1) | AU2002357140A1 (enExample) |
| DE (1) | DE60224712T2 (enExample) |
| TW (1) | TWI270961B (enExample) |
| WO (1) | WO2003050858A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050124097A1 (en) * | 2003-12-05 | 2005-06-09 | Advanced Micro Devices, Inc | Integrated circuit with two phase fuse material and method of using and making same |
| US7645687B2 (en) * | 2005-01-20 | 2010-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Method to fabricate variable work function gates for FUSI devices |
| WO2007027607A2 (en) * | 2005-08-31 | 2007-03-08 | International Business Machines Corporation | Random access electrically programmable-e-fuse rom |
| US7460003B2 (en) * | 2006-03-09 | 2008-12-02 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
| US7288804B2 (en) | 2006-03-09 | 2007-10-30 | International Business Machines Corporation | Electrically programmable π-shaped fuse structures and methods of fabrication thereof |
| US7645645B2 (en) * | 2006-03-09 | 2010-01-12 | International Business Machines Corporation | Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof |
| US7784009B2 (en) * | 2006-03-09 | 2010-08-24 | International Business Machines Corporation | Electrically programmable π-shaped fuse structures and design process therefore |
| US7417300B2 (en) | 2006-03-09 | 2008-08-26 | International Business Machines Corporation | Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof |
| US7924597B2 (en) * | 2007-10-31 | 2011-04-12 | Hewlett-Packard Development Company, L.P. | Data storage in circuit elements with changed resistance |
| US8354304B2 (en) * | 2008-12-05 | 2013-01-15 | Stats Chippac, Ltd. | Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant |
| WO2011024340A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US8912626B2 (en) | 2011-01-25 | 2014-12-16 | International Business Machines Corporation | eFuse and method of fabrication |
| US12408563B1 (en) * | 2020-08-24 | 2025-09-02 | Synopsys, Inc. | Superconducting anti-fuse based field programmable gate array |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4042950A (en) * | 1976-03-01 | 1977-08-16 | Advanced Micro Devices, Inc. | Platinum silicide fuse links for integrated circuit devices |
| JPS60261154A (ja) * | 1984-06-08 | 1985-12-24 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置の製造方法 |
| US4647340A (en) * | 1986-03-31 | 1987-03-03 | Ncr Corporation | Programmable read only memory using a tungsten fuse |
| JPH0424945A (ja) * | 1990-05-16 | 1992-01-28 | Seiko Instr Inc | 半導体装置の製造方法 |
| US5708291A (en) * | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
| US6337507B1 (en) * | 1995-09-29 | 2002-01-08 | Intel Corporation | Silicide agglomeration fuse device with notches to enhance programmability |
| US5821160A (en) * | 1996-06-06 | 1998-10-13 | Motorola, Inc. | Method for forming a laser alterable fuse area of a memory cell using an etch stop layer |
| US5976943A (en) * | 1996-12-27 | 1999-11-02 | Vlsi Technology, Inc. | Method for bi-layer programmable resistor |
| FR2760563A1 (fr) * | 1997-03-07 | 1998-09-11 | Sgs Thomson Microelectronics | Pseudofusible et application a un circuit d'etablissement d'une bascule a la mise sous tension |
| US6022775A (en) | 1998-08-17 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company | High effective area capacitor for high density DRAM circuits using silicide agglomeration |
| US6242790B1 (en) | 1999-08-30 | 2001-06-05 | Advanced Micro Devices, Inc. | Using polysilicon fuse for IC programming |
| JP2001077050A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
| US6391767B1 (en) * | 2000-02-11 | 2002-05-21 | Advanced Micro Devices, Inc. | Dual silicide process to reduce gate resistance |
| JP2001326242A (ja) * | 2000-05-16 | 2001-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6642601B2 (en) * | 2000-12-18 | 2003-11-04 | Texas Instruments Incorporated | Low current substantially silicide fuse for integrated circuits |
-
2001
- 2001-12-10 US US10/014,064 patent/US6756255B1/en not_active Expired - Lifetime
-
2002
- 2002-12-09 AU AU2002357140A patent/AU2002357140A1/en not_active Abandoned
- 2002-12-09 JP JP2003551823A patent/JP4651941B2/ja not_active Expired - Fee Related
- 2002-12-09 DE DE60224712T patent/DE60224712T2/de not_active Expired - Lifetime
- 2002-12-09 EP EP02804766A patent/EP1451860B1/en not_active Expired - Lifetime
- 2002-12-09 CN CNB02824656XA patent/CN100352009C/zh not_active Expired - Fee Related
- 2002-12-09 KR KR1020047008979A patent/KR100957601B1/ko not_active Expired - Fee Related
- 2002-12-09 WO PCT/US2002/039482 patent/WO2003050858A1/en not_active Ceased
- 2002-12-10 TW TW091135639A patent/TWI270961B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2857006B2 (ja) | Ｍｏｓ集積回路上の自己整列珪化コバルト | |
| JPH0365658B2 (enExample) | ||
| JP2005513764A5 (enExample) | ||
| JPH02273934A (ja) | 半導体素子およびその製造方法 | |
| US20070222000A1 (en) | Method of forming silicided gate structure | |
| JP2673109B2 (ja) | 自己整列型のｔ−ゲートガリウム砒素の金属半導体の電界効果トランジスタの製造方法 | |
| KR940020531A (ko) | 콘택홀에 금속플러그 제조방법 | |
| JP3912932B2 (ja) | フラッシュメモリデバイスの製造方法 | |
| JPH11284179A5 (enExample) | ||
| US7235473B2 (en) | Dual silicide semiconductor fabrication process | |
| US8030149B2 (en) | Method for manufacturing semiconductor device | |
| JP2000307060A (ja) | 抵抗素子の製造方法 | |
| KR100258347B1 (ko) | 반도체 장치의 제조 방법 | |
| KR100720471B1 (ko) | 반도체 소자의 제조방법 | |
| US20030022489A1 (en) | Method of fabricating high melting point metal wiring layer, method of fabricating semiconductor device and semiconductor device | |
| JP2001358330A (ja) | 半導体装置の製造方法 | |
| KR100414025B1 (ko) | 반도체 소자의 실리사이드 형성 방법 | |
| JPH09199717A (ja) | 半導体装置の製造方法 | |
| KR100720470B1 (ko) | 반도체 소자의 제조방법 | |
| JP4841082B2 (ja) | 不揮発性半導体記憶装置の製造方法 | |
| US6486048B1 (en) | Method for fabricating a semiconductor device using conductive oxide and metal layer to silicide source + drain | |
| KR100660331B1 (ko) | 반도체 소자의 제조방법 | |
| JPS60110163A (ja) | Ｍｏｓ型トランジスタの製造方法 | |
| JPH04230039A (ja) | 半導体装置及びその製造方法 | |
| JP2009516910A (ja) | サリサイド層を有する半導体装置を形成する方法 |