KR100957601B1 - 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 - Google Patents

집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 Download PDF

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Publication number
KR100957601B1
KR100957601B1 KR1020047008979A KR20047008979A KR100957601B1 KR 100957601 B1 KR100957601 B1 KR 100957601B1 KR 1020047008979 A KR1020047008979 A KR 1020047008979A KR 20047008979 A KR20047008979 A KR 20047008979A KR 100957601 B1 KR100957601 B1 KR 100957601B1
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South Korea
Prior art keywords
fuse
insulator
polysilicon layer
layer
region
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Expired - Fee Related
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KR1020047008979A
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English (en)
Korean (ko)
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KR20040064302A (ko
Inventor
두루시일시비
피셔필립에이.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020047008979A 2001-12-10 2002-12-09 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정 Expired - Fee Related KR100957601B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/014,064 US6756255B1 (en) 2001-12-10 2001-12-10 CMOS process with an integrated, high performance, silicide agglomeration fuse
US10/014,064 2001-12-10
PCT/US2002/039482 WO2003050858A1 (en) 2001-12-10 2002-12-09 Cmos process with an integrated, high performance, silicide agglomeration fuse

Publications (2)

Publication Number Publication Date
KR20040064302A KR20040064302A (ko) 2004-07-16
KR100957601B1 true KR100957601B1 (ko) 2010-05-13

Family

ID=21763328

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047008979A Expired - Fee Related KR100957601B1 (ko) 2001-12-10 2002-12-09 집적된 고성능의 실리사이드 응집 퓨즈를 갖는 ｃｍｏｓ 공정

Country Status (9)

Country Link
US (1) US6756255B1 (enExample)
EP (1) EP1451860B1 (enExample)
JP (1) JP4651941B2 (enExample)
KR (1) KR100957601B1 (enExample)
CN (1) CN100352009C (enExample)
AU (1) AU2002357140A1 (enExample)
DE (1) DE60224712T2 (enExample)
TW (1) TWI270961B (enExample)
WO (1) WO2003050858A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050124097A1 (en) * 2003-12-05 2005-06-09 Advanced Micro Devices, Inc Integrated circuit with two phase fuse material and method of using and making same
US7645687B2 (en) * 2005-01-20 2010-01-12 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate variable work function gates for FUSI devices
KR101211213B1 (ko) * 2005-08-31 2012-12-11 인터내셔널 비지네스 머신즈 코포레이션 전기적으로 프로그램가능한 랜덤 액세스 ｅ－퓨즈 롬
US7460003B2 (en) * 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7288804B2 (en) * 2006-03-09 2007-10-30 International Business Machines Corporation Electrically programmable π-shaped fuse structures and methods of fabrication thereof
US7784009B2 (en) * 2006-03-09 2010-08-24 International Business Machines Corporation Electrically programmable π-shaped fuse structures and design process therefore
US7417300B2 (en) 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7645645B2 (en) * 2006-03-09 2010-01-12 International Business Machines Corporation Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof
US7924597B2 (en) * 2007-10-31 2011-04-12 Hewlett-Packard Development Company, L.P. Data storage in circuit elements with changed resistance
US8354304B2 (en) * 2008-12-05 2013-01-15 Stats Chippac, Ltd. Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant
WO2011024340A1 (ja) * 2009-08-27 2011-03-03 パナソニック株式会社 半導体装置及びその製造方法
US8912626B2 (en) 2011-01-25 2014-12-16 International Business Machines Corporation eFuse and method of fabrication
US12408563B1 (en) * 2020-08-24 2025-09-02 Synopsys, Inc. Superconducting anti-fuse based field programmable gate array

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US6022775A (en) 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
JPS60261154A (ja) * 1984-06-08 1985-12-24 Hitachi Micro Comput Eng Ltd 半導体集積回路装置の製造方法
US4647340A (en) * 1986-03-31 1987-03-03 Ncr Corporation Programmable read only memory using a tungsten fuse
JPH0424945A (ja) * 1990-05-16 1992-01-28 Seiko Instr Inc 半導体装置の製造方法
US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
US5821160A (en) * 1996-06-06 1998-10-13 Motorola, Inc. Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
US5976943A (en) * 1996-12-27 1999-11-02 Vlsi Technology, Inc. Method for bi-layer programmable resistor
FR2760563A1 (fr) * 1997-03-07 1998-09-11 Sgs Thomson Microelectronics Pseudofusible et application a un circuit d'etablissement d'une bascule a la mise sous tension
JP2001077050A (ja) * 1999-08-31 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6391767B1 (en) * 2000-02-11 2002-05-21 Advanced Micro Devices, Inc. Dual silicide process to reduce gate resistance
JP2001326242A (ja) * 2000-05-16 2001-11-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6642601B2 (en) * 2000-12-18 2003-11-04 Texas Instruments Incorporated Low current substantially silicide fuse for integrated circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US6022775A (en) 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Also Published As

Publication number Publication date
WO2003050858A1 (en) 2003-06-19
US6756255B1 (en) 2004-06-29
TW200301549A (en) 2003-07-01
KR20040064302A (ko) 2004-07-16
TWI270961B (en) 2007-01-11
DE60224712D1 (de) 2008-03-06
CN100352009C (zh) 2007-11-28
JP2005513764A (ja) 2005-05-12
EP1451860A1 (en) 2004-09-01
CN1695232A (zh) 2005-11-09
AU2002357140A1 (en) 2003-06-23
DE60224712T2 (de) 2009-01-29
EP1451860B1 (en) 2008-01-16
JP4651941B2 (ja) 2011-03-16

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