TWI270961B - CMOS process with an integrated, high performance, silicide agglomeration fuse - Google Patents
CMOS process with an integrated, high performance, silicide agglomeration fuse Download PDFInfo
- Publication number
- TWI270961B TWI270961B TW091135639A TW91135639A TWI270961B TW I270961 B TWI270961 B TW I270961B TW 091135639 A TW091135639 A TW 091135639A TW 91135639 A TW91135639 A TW 91135639A TW I270961 B TWI270961 B TW I270961B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- insulator
- region
- polysilicon
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 70
- 230000008569 process Effects 0.000 title abstract description 46
- 230000002776 aggregation Effects 0.000 title description 4
- 238000005054 agglomeration Methods 0.000 title description 2
- 229910021332 silicide Inorganic materials 0.000 title 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 65
- 229920005591 polysilicon Polymers 0.000 claims abstract description 65
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 7
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920002098 polyfluorene Polymers 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 32
- 230000000295 complement effect Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 6
- 150000004706 metal oxides Chemical class 0.000 abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 description 22
- 239000010941 cobalt Substances 0.000 description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000012545 processing Methods 0.000 description 15
- 230000003667 anti-reflective effect Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 150000004772 tellurides Chemical group 0.000 description 6
- 230000004520 agglutination Effects 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- VRRFSFYSLSPWQY-UHFFFAOYSA-N sulfanylidenecobalt Chemical compound [Co]=S VRRFSFYSLSPWQY-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920001021 polysulfide Polymers 0.000 description 2
- 239000005077 polysulfide Substances 0.000 description 2
- 150000008117 polysulfides Polymers 0.000 description 2
- 238000010187 selection method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical class [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- RILANLDEAUXJGY-UHFFFAOYSA-N cerium germanium Chemical compound [Ge].[Ce] RILANLDEAUXJGY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
- H10D84/0172—Manufacturing their gate conductors
- H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/014,064 US6756255B1 (en) | 2001-12-10 | 2001-12-10 | CMOS process with an integrated, high performance, silicide agglomeration fuse |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200301549A TW200301549A (en) | 2003-07-01 |
| TWI270961B true TWI270961B (en) | 2007-01-11 |
Family
ID=21763328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091135639A TWI270961B (en) | 2001-12-10 | 2002-12-10 | CMOS process with an integrated, high performance, silicide agglomeration fuse |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6756255B1 (enExample) |
| EP (1) | EP1451860B1 (enExample) |
| JP (1) | JP4651941B2 (enExample) |
| KR (1) | KR100957601B1 (enExample) |
| CN (1) | CN100352009C (enExample) |
| AU (1) | AU2002357140A1 (enExample) |
| DE (1) | DE60224712T2 (enExample) |
| TW (1) | TWI270961B (enExample) |
| WO (1) | WO2003050858A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050124097A1 (en) * | 2003-12-05 | 2005-06-09 | Advanced Micro Devices, Inc | Integrated circuit with two phase fuse material and method of using and making same |
| US7645687B2 (en) * | 2005-01-20 | 2010-01-12 | Chartered Semiconductor Manufacturing, Ltd. | Method to fabricate variable work function gates for FUSI devices |
| KR101211213B1 (ko) * | 2005-08-31 | 2012-12-11 | 인터내셔널 비지네스 머신즈 코포레이션 | 전기적으로 프로그램가능한 랜덤 액세스 ｅ－퓨즈 롬 |
| US7460003B2 (en) * | 2006-03-09 | 2008-12-02 | International Business Machines Corporation | Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer |
| US7288804B2 (en) * | 2006-03-09 | 2007-10-30 | International Business Machines Corporation | Electrically programmable π-shaped fuse structures and methods of fabrication thereof |
| US7784009B2 (en) * | 2006-03-09 | 2010-08-24 | International Business Machines Corporation | Electrically programmable π-shaped fuse structures and design process therefore |
| US7417300B2 (en) | 2006-03-09 | 2008-08-26 | International Business Machines Corporation | Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof |
| US7645645B2 (en) * | 2006-03-09 | 2010-01-12 | International Business Machines Corporation | Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof |
| US7924597B2 (en) * | 2007-10-31 | 2011-04-12 | Hewlett-Packard Development Company, L.P. | Data storage in circuit elements with changed resistance |
| US8354304B2 (en) * | 2008-12-05 | 2013-01-15 | Stats Chippac, Ltd. | Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant |
| WO2011024340A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US8912626B2 (en) | 2011-01-25 | 2014-12-16 | International Business Machines Corporation | eFuse and method of fabrication |
| US12408563B1 (en) * | 2020-08-24 | 2025-09-02 | Synopsys, Inc. | Superconducting anti-fuse based field programmable gate array |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4042950A (en) * | 1976-03-01 | 1977-08-16 | Advanced Micro Devices, Inc. | Platinum silicide fuse links for integrated circuit devices |
| JPS60261154A (ja) * | 1984-06-08 | 1985-12-24 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置の製造方法 |
| US4647340A (en) * | 1986-03-31 | 1987-03-03 | Ncr Corporation | Programmable read only memory using a tungsten fuse |
| JPH0424945A (ja) * | 1990-05-16 | 1992-01-28 | Seiko Instr Inc | 半導体装置の製造方法 |
| US5708291A (en) * | 1995-09-29 | 1998-01-13 | Intel Corporation | Silicide agglomeration fuse device |
| US6337507B1 (en) * | 1995-09-29 | 2002-01-08 | Intel Corporation | Silicide agglomeration fuse device with notches to enhance programmability |
| US5821160A (en) * | 1996-06-06 | 1998-10-13 | Motorola, Inc. | Method for forming a laser alterable fuse area of a memory cell using an etch stop layer |
| US5976943A (en) * | 1996-12-27 | 1999-11-02 | Vlsi Technology, Inc. | Method for bi-layer programmable resistor |
| FR2760563A1 (fr) * | 1997-03-07 | 1998-09-11 | Sgs Thomson Microelectronics | Pseudofusible et application a un circuit d'etablissement d'une bascule a la mise sous tension |
| US6022775A (en) | 1998-08-17 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company | High effective area capacitor for high density DRAM circuits using silicide agglomeration |
| US6242790B1 (en) | 1999-08-30 | 2001-06-05 | Advanced Micro Devices, Inc. | Using polysilicon fuse for IC programming |
| JP2001077050A (ja) * | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
| US6391767B1 (en) * | 2000-02-11 | 2002-05-21 | Advanced Micro Devices, Inc. | Dual silicide process to reduce gate resistance |
| JP2001326242A (ja) * | 2000-05-16 | 2001-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6642601B2 (en) * | 2000-12-18 | 2003-11-04 | Texas Instruments Incorporated | Low current substantially silicide fuse for integrated circuits |
-
2001
- 2001-12-10 US US10/014,064 patent/US6756255B1/en not_active Expired - Lifetime
-
2002
- 2002-12-09 KR KR1020047008979A patent/KR100957601B1/ko not_active Expired - Fee Related
- 2002-12-09 EP EP02804766A patent/EP1451860B1/en not_active Expired - Lifetime
- 2002-12-09 CN CNB02824656XA patent/CN100352009C/zh not_active Expired - Fee Related
- 2002-12-09 JP JP2003551823A patent/JP4651941B2/ja not_active Expired - Fee Related
- 2002-12-09 DE DE60224712T patent/DE60224712T2/de not_active Expired - Lifetime
- 2002-12-09 AU AU2002357140A patent/AU2002357140A1/en not_active Abandoned
- 2002-12-09 WO PCT/US2002/039482 patent/WO2003050858A1/en not_active Ceased
- 2002-12-10 TW TW091135639A patent/TWI270961B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003050858A1 (en) | 2003-06-19 |
| US6756255B1 (en) | 2004-06-29 |
| TW200301549A (en) | 2003-07-01 |
| KR20040064302A (ko) | 2004-07-16 |
| DE60224712D1 (de) | 2008-03-06 |
| KR100957601B1 (ko) | 2010-05-13 |
| CN100352009C (zh) | 2007-11-28 |
| JP2005513764A (ja) | 2005-05-12 |
| EP1451860A1 (en) | 2004-09-01 |
| CN1695232A (zh) | 2005-11-09 |
| AU2002357140A1 (en) | 2003-06-23 |
| DE60224712T2 (de) | 2009-01-29 |
| EP1451860B1 (en) | 2008-01-16 |
| JP4651941B2 (ja) | 2011-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |