CN100352009C - 具有高性能集成电路多晶硅凝集熔消组件的互补金属氧化物半导体的工艺 - Google Patents

具有高性能集成电路多晶硅凝集熔消组件的互补金属氧化物半导体的工艺 Download PDF

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Publication number
CN100352009C
CN100352009C CNB02824656XA CN02824656A CN100352009C CN 100352009 C CN100352009 C CN 100352009C CN B02824656X A CNB02824656X A CN B02824656XA CN 02824656 A CN02824656 A CN 02824656A CN 100352009 C CN100352009 C CN 100352009C
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China
Prior art keywords
insulator
polysilicon layer
polysilicon
silicon substrate
layer
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Expired - Fee Related
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CNB02824656XA
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English (en)
Chinese (zh)
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CN1695232A (zh
Inventor
C·萨鲁瑟伊尔
P·A·菲舍尔
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Publication of CN1695232A publication Critical patent/CN1695232A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
CNB02824656XA 2001-12-10 2002-12-09 具有高性能集成电路多晶硅凝集熔消组件的互补金属氧化物半导体的工艺 Expired - Fee Related CN100352009C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/014,064 2001-12-10
US10/014,064 US6756255B1 (en) 2001-12-10 2001-12-10 CMOS process with an integrated, high performance, silicide agglomeration fuse

Publications (2)

Publication Number Publication Date
CN1695232A CN1695232A (zh) 2005-11-09
CN100352009C true CN100352009C (zh) 2007-11-28

Family

ID=21763328

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02824656XA Expired - Fee Related CN100352009C (zh) 2001-12-10 2002-12-09 具有高性能集成电路多晶硅凝集熔消组件的互补金属氧化物半导体的工艺

Country Status (9)

Country Link
US (1) US6756255B1 (enExample)
EP (1) EP1451860B1 (enExample)
JP (1) JP4651941B2 (enExample)
KR (1) KR100957601B1 (enExample)
CN (1) CN100352009C (enExample)
AU (1) AU2002357140A1 (enExample)
DE (1) DE60224712T2 (enExample)
TW (1) TWI270961B (enExample)
WO (1) WO2003050858A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050124097A1 (en) * 2003-12-05 2005-06-09 Advanced Micro Devices, Inc Integrated circuit with two phase fuse material and method of using and making same
US7645687B2 (en) * 2005-01-20 2010-01-12 Chartered Semiconductor Manufacturing, Ltd. Method to fabricate variable work function gates for FUSI devices
US7817455B2 (en) * 2005-08-31 2010-10-19 International Business Machines Corporation Random access electrically programmable e-fuse ROM
US7417300B2 (en) * 2006-03-09 2008-08-26 International Business Machines Corporation Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof
US7784009B2 (en) * 2006-03-09 2010-08-24 International Business Machines Corporation Electrically programmable π-shaped fuse structures and design process therefore
US7460003B2 (en) * 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7645645B2 (en) * 2006-03-09 2010-01-12 International Business Machines Corporation Electrically programmable fuse structures with terminal portions residing at different heights, and methods of fabrication thereof
US7288804B2 (en) * 2006-03-09 2007-10-30 International Business Machines Corporation Electrically programmable π-shaped fuse structures and methods of fabrication thereof
US7924597B2 (en) * 2007-10-31 2011-04-12 Hewlett-Packard Development Company, L.P. Data storage in circuit elements with changed resistance
US8354304B2 (en) * 2008-12-05 2013-01-15 Stats Chippac, Ltd. Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant
JP5478626B2 (ja) * 2009-08-27 2014-04-23 パナソニック株式会社 半導体装置
US8912626B2 (en) 2011-01-25 2014-12-16 International Business Machines Corporation eFuse and method of fabrication
US12408563B1 (en) * 2020-08-24 2025-09-02 Synopsys, Inc. Superconducting anti-fuse based field programmable gate array

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US5854510A (en) * 1996-12-27 1998-12-29 Vlsi Technology, Inc. Low power programmable fuse structures
US6022775A (en) * 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) * 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261154A (ja) * 1984-06-08 1985-12-24 Hitachi Micro Comput Eng Ltd 半導体集積回路装置の製造方法
US4647340A (en) * 1986-03-31 1987-03-03 Ncr Corporation Programmable read only memory using a tungsten fuse
JPH0424945A (ja) * 1990-05-16 1992-01-28 Seiko Instr Inc 半導体装置の製造方法
US5821160A (en) * 1996-06-06 1998-10-13 Motorola, Inc. Method for forming a laser alterable fuse area of a memory cell using an etch stop layer
FR2760563A1 (fr) * 1997-03-07 1998-09-11 Sgs Thomson Microelectronics Pseudofusible et application a un circuit d'etablissement d'une bascule a la mise sous tension
JP2001077050A (ja) * 1999-08-31 2001-03-23 Toshiba Corp 半導体装置の製造方法
US6391767B1 (en) * 2000-02-11 2002-05-21 Advanced Micro Devices, Inc. Dual silicide process to reduce gate resistance
JP2001326242A (ja) * 2000-05-16 2001-11-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6642601B2 (en) * 2000-12-18 2003-11-04 Texas Instruments Incorporated Low current substantially silicide fuse for integrated circuits

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4042950A (en) * 1976-03-01 1977-08-16 Advanced Micro Devices, Inc. Platinum silicide fuse links for integrated circuit devices
US5708291A (en) * 1995-09-29 1998-01-13 Intel Corporation Silicide agglomeration fuse device
CN1202277A (zh) * 1995-09-29 1998-12-16 英特尔公司 硅化物块熔丝器件
WO1998027595A1 (en) * 1996-12-18 1998-06-25 Intel Corporation A silicide agglomeration fuse device with notches to enhance programmability
US5854510A (en) * 1996-12-27 1998-12-29 Vlsi Technology, Inc. Low power programmable fuse structures
US6022775A (en) * 1998-08-17 2000-02-08 Taiwan Semiconductor Manufacturing Company High effective area capacitor for high density DRAM circuits using silicide agglomeration
US6242790B1 (en) * 1999-08-30 2001-06-05 Advanced Micro Devices, Inc. Using polysilicon fuse for IC programming

Also Published As

Publication number Publication date
US6756255B1 (en) 2004-06-29
DE60224712D1 (de) 2008-03-06
KR20040064302A (ko) 2004-07-16
EP1451860A1 (en) 2004-09-01
JP2005513764A (ja) 2005-05-12
DE60224712T2 (de) 2009-01-29
EP1451860B1 (en) 2008-01-16
JP4651941B2 (ja) 2011-03-16
AU2002357140A1 (en) 2003-06-23
TWI270961B (en) 2007-01-11
TW200301549A (en) 2003-07-01
KR100957601B1 (ko) 2010-05-13
CN1695232A (zh) 2005-11-09
WO2003050858A1 (en) 2003-06-19

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