JPS60110163A - Manufacture of mos transistor - Google Patents
Manufacture of mos transistorInfo
- Publication number
- JPS60110163A JPS60110163A JP21777583A JP21777583A JPS60110163A JP S60110163 A JPS60110163 A JP S60110163A JP 21777583 A JP21777583 A JP 21777583A JP 21777583 A JP21777583 A JP 21777583A JP S60110163 A JPS60110163 A JP S60110163A
- Authority
- JP
- Japan
- Prior art keywords
- film
- source
- gate electrode
- nitride film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21777583A JPS60110163A (en) | 1983-11-21 | 1983-11-21 | Manufacture of mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21777583A JPS60110163A (en) | 1983-11-21 | 1983-11-21 | Manufacture of mos transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60110163A true JPS60110163A (en) | 1985-06-15 |
Family
ID=16709533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21777583A Pending JPS60110163A (en) | 1983-11-21 | 1983-11-21 | Manufacture of mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60110163A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756272B1 (en) | 1998-10-01 | 2004-06-29 | Nec Corporation | Method of manufacturing non-volatile semiconductor memory device |
| US7775138B2 (en) | 2004-09-13 | 2010-08-17 | Honda Motor Co., Ltd. | Wire fixing structure |
-
1983
- 1983-11-21 JP JP21777583A patent/JPS60110163A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756272B1 (en) | 1998-10-01 | 2004-06-29 | Nec Corporation | Method of manufacturing non-volatile semiconductor memory device |
| US7775138B2 (en) | 2004-09-13 | 2010-08-17 | Honda Motor Co., Ltd. | Wire fixing structure |
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