TWI503325B - 單分子層或多分子層形成用組成物 - Google Patents
單分子層或多分子層形成用組成物 Download PDFInfo
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- TWI503325B TWI503325B TW100137329A TW100137329A TWI503325B TW I503325 B TWI503325 B TW I503325B TW 100137329 A TW100137329 A TW 100137329A TW 100137329 A TW100137329 A TW 100137329A TW I503325 B TWI503325 B TW I503325B
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- 239000011254 layer-forming composition Substances 0.000 title description 2
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- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- 239000004147 Sorbitan trioleate Substances 0.000 description 2
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 2
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- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
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- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
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- AGGJWJFEEKIYOF-UHFFFAOYSA-N 1,1,1-triethoxydecane Chemical compound CCCCCCCCCC(OCC)(OCC)OCC AGGJWJFEEKIYOF-UHFFFAOYSA-N 0.000 description 1
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- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 description 1
- XZIIFPSPUDAGJM-UHFFFAOYSA-N 6-chloro-2-n,2-n-diethylpyrimidine-2,4-diamine Chemical compound CCN(CC)C1=NC(N)=CC(Cl)=N1 XZIIFPSPUDAGJM-UHFFFAOYSA-N 0.000 description 1
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- JSGRIFNBTXDZQU-UHFFFAOYSA-N C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC JSGRIFNBTXDZQU-UHFFFAOYSA-N 0.000 description 1
- NCFPZFKBZRQTBY-UHFFFAOYSA-N COC(CCCCCCCCCC1=CC=C(C=C1)C)(OC)OC Chemical compound COC(CCCCCCCCCC1=CC=C(C=C1)C)(OC)OC NCFPZFKBZRQTBY-UHFFFAOYSA-N 0.000 description 1
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
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- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
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- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
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- C07F7/1804—Compounds having Si-O-C linkages
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- C08G77/04—Polysiloxanes
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Description
本發明關於用於在基板表面上塗佈，而將單分子層或多分子層形成在光阻下層之組成物。特別地，關於在具有階差(凹凸)的表面上形成單分子層或多分子層用之組成物。
電場效應電晶體等的半導體元件之製造時的離子注入步驟，係有採用以光阻圖型為光罩，對半導體基板導入賦予n型或p型導電型的雜質離子之步驟的情況。於多數的情況中，該半導體基板係藉由使用多晶矽、鋁、氮化鈦等的半導體材料或金屬材料來形成閘電極及閘極配線，而具有階差或凹凸表面。於具有該階差(凹凸)的基板表面上形成光阻圖型時，部分地形成厚的光阻膜，而難以形成均勻的膜厚。因此，即使經過對於上述光阻膜的曝光、顯像及沖洗，也不完全去除所厚地形成之部分，而容易殘留。結果，光阻圖型的底部形狀容易成為下端拖尾形狀，有發生殘渣的問題。
另一方面，向來已知以HMDS(六甲基二矽氮烷)處理半導體基板的代表例之矽晶圓的表面，而使該表面成為疏水性(撥水性)之方法。矽晶圓表面若自然形成氧化膜，則顯示親水性。於該親水性的表面上，塗佈光阻溶液，預烘烤而形成的光阻膜，係與矽晶圓的密接性差。
基板表面的疏水性及親水性係可藉由水的接觸角來評價。專利文獻1中記載使光照射前後的接觸角大幅變化，光照射前具有撥液性能，經光照射時藉由具有撥液性能的基之解離而產生具有親水性能的構造之光分解性偶合劑。專利文獻2中記載為了使圖型形成步驟成為簡潔且高可靠性，形成可藉由光照射而選擇地轉換表面物性之有機薄膜的化合物。
先前技術文獻
專利文獻
專利文獻1：特開2008-050321號公報
專利文獻2：特開2006-070026號公報
本發明在於提供：即使在具有階差的基板表面上，也可形成底部形狀不成為下端拖尾形狀的所欲之光阻圖型，使用於形成該光阻圖型的基板之表面處理，在該基板上形成單分子層或多分子層用的新穎組成物。
發現藉由使用本發明的組成物，在基板上形成單分子層或多分子層，在其上形成光阻圖型，可調整該光阻圖型的底部形狀。即，本發明的第1態樣係一種單分子層或多分子層形成用組成物，其係含有以下述式(1A)或下述式(1B)所示的矽烷化合物及有機溶劑，
[化1]
[式中，R1
各自獨立地表示甲基或乙基，X各自獨立地表示碳原子數1至10的連結基，Z各自獨立地表示碳原子數1至10的烷基或可具有取代基的苯基，前述X係在主鏈可含有至少一個氧原子或硫原子，當前述Z表示烷基時，該烷基的至少一個氫原子係可被氟原子取代]。
上述單分子層或多分子層形成用組成物係可更含有下述式(2)所示的矽烷化合物，
[化2]
(R2
O)3
Si-Y (2)
[式中，R2
各自獨立地表示甲基或乙基，Y表示可具有取代基的碳原子數1至5的烷基或可具有取代基的苯基]。
當前述碳原子數1至5的烷基具有取代基時，作為該取代基，例如可舉出胺基、咪唑基、吡啶基、巰基、磺基。此處，胺基“-NH2
”係其氮原子上的氫原子之至少一個可被烷基取代，例如被甲基取代。當前述苯基具有取代基時，作為該取代基，例如可舉出甲基。
本發明的第2態樣係一種光阻圖型之形成方法，其包含：使用本發明的第1態樣之組成物，於半導體基板上形成單分子層或多分子層之步驟；於該單分子層或多分子層上形成光阻膜之步驟；將經該單分子層或多分子層與該光阻膜所被覆的半導體基板曝光之步驟；及，於該曝光後，將該光阻膜顯像之步驟。
作為上述半導體基板，可使用在表面形成有階差的基板。該階差例如係起於半導體元件的閘電極及閘極配線。
本發明的組成物係可在基板的表面上，尤其在形成有階差的基板之表面上，形成單分子層或多分子層。此單分子層或多分子層係可調整其上所形成的光阻圖型之底部形狀，例如可調整到沒有下端拖尾形狀。
[實施發明的形態]
本發明的組成物係含有前述式(1A)或式(1B)所示的矽烷化合物。由於矽烷化合物具有以此等式所示的構造，而與酸反應，產生新的酸。例如，當式(1B)所示的矽烷化合物具有甲苯磺醯基時，與酸反應而產生對甲苯磺酸。藉由此產生的酸，進一步促進反應，增殖地發生酸。式(1A)或式(1B)中，作為X所示的碳原子數1至10之連結基，例如可舉出伸烷基、伸苯基、伸環己基。當該連結基為碳原子數3以上的伸烷基時，其主鏈亦可為分支狀。式(1A)或式(1B)中，當Z表示具有取代基的苯基時，作為該取代基，例如可舉出甲基。又，當Z表示碳原子數3以上的烷基時，該烷基較佳為如異丙基、第三丁基的支鏈狀烷基。
本發明的組成物藉由含有式(1A)或式(1B)所示的矽烷化合物，而且含有式(2)所示的矽烷化合物，可控制基板上所形成的單分子層或多分子層表面之疏水性。
式(2)所示的矽烷化合物係可僅使用1種，也可組合2種以上使用。相對於式(1A)或式(1B)所示的矽烷化合物與式(2)所示的矽烷化合物之總和而言，式(2)所示的矽烷化合物之比例係例如為1質量%至99質量%、或5質量%至95質量%，而且，例如10質量%以上且未達95質量%。
本發明之組成物，係除了上述矽烷化合物以外，還可含有水及有機酸。藉由含有水及有機酸，可提高本發明的組成物之保存安定性，同時在基板上塗佈該組成物，進行烘烤而形成單分子層或多分子層時，可促進矽烷化合物的縮合反應。作為有機酸，例如可舉出醋酸、馬來酸、草酸、檸檬酸、蘋果酸、琥珀酸的羧酸。
本發明的組成物可含有界面活性劑。作為界面活性劑，例如可舉出聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯鯨蠟基醚、聚氧乙烯油基醚等的聚氧乙烯烷基醚類、聚氧乙烯辛基苯酚醚、聚氧乙烯壬基苯酚醚等的聚氧乙烯烷基芳基醚類、聚氧乙烯‧聚氧丙烯嵌段共聚物類、山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯、山梨糖醇酐單油酸酯、山梨糖醇酐三油酸酯、山梨糖醇酐三硬脂酸酯等的山梨糖醇酐脂肪酸酯類、聚氧乙烯山梨糖醇酐單月桂酸酯、聚氧乙烯山梨糖醇酐單棕櫚酸酯、聚氧乙烯山梨糖醇酐單硬脂酸酯、聚氧乙烯山梨糖醇酐三油酸酯、聚氧乙烯山梨糖醇酐三硬脂酸酯等的聚氧乙烯山梨糖醇酐脂肪酸酯類等的非離子系界面活性劑、Eftop(註冊商標)EF301、同EF303、同EF352(三菱材料電子化成(股)(舊株式會社JEMCO)製)、Megafac(註冊商標)F171、同F173、同R30(DIC(股)製)、Fluorad FC430、同FC431(住友3M(股)製)、Asahiguard(註冊商標)AG710、Surflon(註冊商標)S-382、同SC101、同SC102、同SC103、同SC104、同SC105、同SC106(旭硝子(股)製)等的氟系界面活性劑、有機矽氧烷聚合物KP341(信越化學工業(股)製)。此等界面活性劑的配合量，在本發明的組成物的全部成分中，通常為0.2質量%以下，較佳為0.1質量%以下。此等界面活性劑係可添加1種類，也可添加2種以上的組合。
本發明的組成物係可藉由使上述各成分溶解於適當的有機溶劑中而調製，以均勻的溶液狀態使用。作為如此的有機溶劑，例如可舉出乙二醇單甲基醚、乙二醇單乙基醚、二乙二醇單甲基醚、二乙二醇單乙基醚、丙二醇、丙二醇單甲基醚、丙二醇單丙基醚、丙二醇單甲基醚乙酸酯、丙二醇丙基醚乙酸酯、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、甲苯、二甲苯、甲基乙基酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基醋酸乙酯、羥基醋酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、醋酸乙酯、醋酸丁酯、乳酸乙酯、乳酸丁酯、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基吡咯啶酮。此等有機溶劑可為單獨或以2種以上的組合使用。
自本發明的組成物中去除有機溶劑後(含有水及有機酸時，亦去除此等)的固體成分之比例，例如為0.001質量%至10質量%，較佳為0.1質量%至5質量%。
以下，說明本發明的組成物之使用。於半導體基板(例如形成有閘電極的矽晶圓，該矽晶圓亦可被氧化矽膜、氮化矽膜或氧氮化矽膜所被覆)之上，藉由旋塗等適當的塗佈方法塗佈本發明的組成物，然後使用熱板等的加熱手段進行烘烤。烘烤條件係由烘烤溫度80℃至180℃、烘烤時間0.3分鐘至10分鐘中適宜地選擇。代替半導體基板，亦可使用氮化矽基板、石英基板、玻璃基板(包含無鹼玻璃、低鹼玻璃、結晶化玻璃)、形成有ITO膜的玻璃基板。
然後，藉由以溶劑去除半導體基板上所殘留的過剩之矽烷化合物，使乾燥而形成單分子層或多分子層。使用本發明的組成物所形成的層係極薄，測定其厚度係困難。再者，將該層特別規定為單分子層、多分子層中的任一者亦困難。
於經過上述過程而在半導體基板上形成的單分子層或多分子層之上，形成光阻膜。光阻膜的形成係可藉由一般的方法，例如藉由光阻溶液的塗佈及烘烤而進行。
作為光阻溶液，只要是對曝光光線感光者，則沒有特別的限定。有含有酚醛清漆樹脂與1,2-萘醌二疊氮磺酸酯之正型光阻，含有具有羥基的聚合物、胺基塑料交聯劑、光酸產生劑的系且藉由酸進行交聯而降低鹼溶解速度之負型光阻，含有具有因酸進行分解而提高鹼溶解速度之基的黏結劑與光酸產生劑之化學增幅型光阻，含有因酸進行分解而提高光阻的鹼溶解速度之低分子化合物、鹼可溶性黏結劑與光酸產生劑之化學增幅型光阻，含有具有因酸進行分解而提高鹼溶解速度之基的黏結劑與因酸進行分解而提高光阻的鹼溶解速度之低分子化合物及光酸產生劑之化學增幅型光阻等。亦可使用能感應電子線或EUV(極端紫外線)之光阻。
於形成光阻圖型之際，曝光係通過形成有指定圖型的光罩(標線片)而進行。於曝光中，可使用KrF準分子雷射、ArF準分子雷射、EUV、電子線等。曝光後，視需要可進行曝光後加熱(Post Exposure Bake)。作為曝光後加熱的條件，可自加熱溫度80℃至150℃、加熱時間0.3分鐘至60分鐘中適宜地選擇。對於形成有光阻膜的半導體基板，通過光罩進行曝光，然後藉由鹼性顯像液進行顯像。
作為鹼性顯像液，可舉出氫氧化鉀、氫氧化鈉等的鹼金屬氫氧化物的水溶液、氫氧化四甲銨、氫氧化四乙銨、膽鹼等的氫氧化四級銨之水溶液、乙醇胺、丙胺、乙二胺等的胺水溶液等之鹼性水溶液當作例子。再者，於此等顯像液中，亦可添加界面活性劑等。
作為顯像的條件，可自顯像溫度5℃至50℃、顯像時間10秒至300秒中適宜地選擇。由本發明的光阻下層膜形成組成物所形成的光阻下層膜，係可使用光阻之顯像所通用之2.38質量%的氫氧化四甲銨水溶液，在室溫下容易進行顯像。
以下，說明本發明的組成物之具體例，惟本發明不受此所限定。
實施例
[化3]
(合成例1)
於具備磁攪拌器的300mL四口燒瓶中，加入4-戊烯-2-醇18.00g及吡啶108.00g，於室溫下攪拌。其次，添加對甲苯磺醯氯(TsCl)37.90g，於室溫下攪拌15小時。“Ts”表示甲苯磺醯基(對甲苯磺醯基)。反應結束後，用醋酸乙酯200g稀釋反應液，以純水100g洗淨有機相3次，以飽和食鹽水100g洗淨1次。再者，將硫酸鈉18.00g加到有機相中，使乾燥。然後，過濾去除硫酸鈉，將濾液濃縮乾燥，而得到41.73g(收率88%)上述化合物1。
[化4]
1H-NMR(CDCl3,
400MHz): 1.26ppm(d,J=6.4Hz,3H),2.22-2.40ppm(m,2H),2.45ppm(s,3H),4.60-4.67ppm(m,1H),5.01-5.06ppm(m,2H),5.54-5.64ppm(m,1H),7.33ppm(d,J=8.0Hz,2H),7.81ppm(d,J=8.0Hz,2H)
(合成例2)
於具備磁攪拌器的100mL四口燒瓶中，加入上述合成例1所得之化合物1 5.00g及甲苯30.00g，於室溫下攪拌。其次，添加卡爾司泰特(Karstedt)觸媒(白金(0)-1,1,3,3-四甲基二矽氧烷錯合物0.1M二甲苯溶液)2080μL後，滴下三乙氧基矽烷[(EtO)3
SiH]12.5mL，於40℃攪拌8小時。反應結束後，於反應液中添加特性白鷺活性碳(日本Enviro Chemicals(股)製)0.25g，於40℃攪拌1小時。然後，過濾去除活性碳，將濾液濃縮乾燥，而得到8.41g(收率100%)相當於前述式(1B)所示的矽烷化合物之上述化合物2。
[化5]
1H-NMR(CDCl3,
400MHz): 0.50-0.58ppm(m,2H),1.21ppm(t,J=6.8Hz,9H),1.25ppm(d,J=6.4Hz,3H),1.27-1,48ppm(m,2H),1.50-1.70ppm(m,2H),2.44ppm(s,3H),3.79ppm(q,J=6.8Hz,6H),4.61ppm(hex,J=7.2Hz,1H),7.32ppm(d,J=8.0Hz,2H),7.79ppm(d,J=8.0Hz,2H)
[化6]
(合成例3)
於具備磁攪拌器的200mL四口燒瓶中，加入4-戊烯-1-醇10.00g、三乙胺(Et3
N)11.75g、吡啶10.00g及四氫呋喃(以下本說明書中簡稱THF)60.00g，於室溫下攪拌。其次，添加甲磺醯氯(MsCl)12.63g，於室溫下攪拌18小時。“Ms”表示甲磺醯基(甲烷磺醯基)。反應結束後，用醋酸乙酯150g稀釋反應液，過濾去除所析出的鹽。接著，以純水70g洗淨濾液2次，將有機相濃縮乾燥，而得到粗物。用矽凝膠管柱(展開溶劑：醋酸乙酯)精製此，而得到16.99g(收率94%)上述化合物3。
[化7]
1H-NMR(CDCl3,
400MHz): 1.86ppm(quintet,J=6.4Hz,2H),2.20ppm(q,J=6.8Hz,2H),3.01ppm(s,3H),4.24ppm(t,J=6.4Hz,2H),5.03ppm(dd,J=10.8Hz,2.0Hz,1H),5.07ppm(dd,J=16.8Hz,2.0Hz,1H),5.78ppm(ddt,J=16.8Hz,10.8Hz,6.8Hz,1H)
(合成例4)
於具備磁攪拌器的200mL四口燒瓶中，加入上述合成例3所得之化合物3 10.00g及甲苯60.00g，於室溫下攪拌。其次，添加Karstedt觸媒(白金(0)-1,1,3,3-四甲基二矽氧烷錯合物0.1M二甲苯溶液)1220μL後，滴下三甲氧基矽烷[(MeO)3
SiH]8.5mL，於室溫下攪拌18小時。反應結束後，於反應液中添加特性白鷺活性碳(日本Enviro Chemicals(股)製)0.5g，於40℃攪拌30分鐘。然後，過濾去除活性碳，將濾液濃縮乾燥，而得到17.44g(收率76%)相當於前述式(1B)所示的矽烷化合物之上述化合物4。
[化8]
1H-NMR(CDCl3,
400MHz): 0.65-0.67ppm(m,2H),1.44-1.47ppm(m,4H),1.72-1.78ppm(m,2H),3.00ppm(s,5H),3.57ppm(s,9H),4.22ppm(t,J=6.4Hz,2H)
[化9]
(合成例5)
於具備磁攪拌器的200mL四口燒瓶中，加入乙二醇單烯丙基醚12.34g、三乙胺12.23g、吡啶12.34g及THF74.00g，於室溫下攪拌。其次，添加甲磺醯氯12.63g，於室溫下攪拌1小時。反應結束後，用醋酸乙酯150g稀釋反應液，過濾去除所析出的鹽。接著，以純水100g洗淨濾液2次，將有機相濃縮乾燥，而得到粗物。用矽凝膠管柱(展開溶劑：醋酸乙酯)精製此，而得到19.55g(收率95%)上述化合物5。
[化10]
1H-NMR(CDCl3.
400MHz): 3.07ppm(s,3H),3.70-3.73ppm(m,2H),4.05ppm(ddd,J=5.7Hz,1.6Hz,1.2Hz,2H),4.37-4.40ppm(m,2H),5.21ppm(ddt,J=10.4Hz,1.8Hz,1.2Hz,1H),5.28ppm(ddt,J=17.2Hz,1.8Hz,1.6Hz,1H),5.89ppm(ddt,J=17.2Hz,10.4Hz,5.7Hz,1H)
(合成例6)
於具備磁攪拌器的100mL四口燒瓶中，加入上述合成例5所得之化合物5 3.00g及甲苯18.00g，於室溫下攪拌。其次，添加Karstedt觸媒(白金(0)-1,1,3,3-四甲基二矽氧烷錯合物0.1M二甲苯溶液)333μL後，滴下三乙氧基矽烷3.3mL，於室溫下攪拌16小時。反應結束後，於反應液中添加特性白鷺活性碳(日本Enviro Chemicals(股)製)0.15g，於40℃攪拌30分鐘。然後，過濾去除活性碳，將濾液濃縮乾燥，而得到粗物。於減壓蒸餾下，在外溫155～172℃/壓力0.5～0.6torr的條件下使其餾出，而得到3.99g(收率70%)相當於前述式(1B)所示的矽烷化合物之上述化合物6。
[化11]
1H-NMR(CDCl3,
400MHz): 0.61-0.66ppm(m,2H),1.22ppm(t,J=5.2Hz,9H),1.65-1.75ppm(m,2H),3.07ppm(s,3H),3.47ppm(t,J=6.4Hz,2H),3.69ppm(t,J=4.4Hz,2H),3.81ppm(q,J=5.2Hz,6H),4.37ppm(t,J=4.4Hz,2H)
[化12]
(合成例7)
於具備磁攪拌器的500mL四口燒瓶中，加入三乙胺34.13g及乙醇(EtOH)200g，於0℃攪拌。其次，於冰浴下，滴下2-氯乙烷磺醯氯25.28g經1,2-二氯乙烯75g所稀釋的溶液，於0～10℃攪拌4小時。反應結束後，用醋酸乙酯500g稀釋反應液，以純水200g洗淨有機相2次，以飽和食鹽水200g洗淨1次。於有機相中，添加2滴的三乙胺與少量的BHT(2,6-二第三丁基對甲酚)後，進行濃縮乾燥，而得到16.79g(收率80%)上述化合物7。
[化13]
1H-NMR(CDCl3,
400MHz): 1.40ppm(t,J=7.0 Hz,3H),4.21ppm(q,J=7.0 Hz,2H),6.14ppm(d,J=9.8 Hz,1H),6.40ppm(d,J=16.6 Hz,1H),6.54ppm(dd,J=9.8 Hz,16.6 Hz,1H)
(合成例8)
於具備磁攪拌器的200mL四口燒瓶中，加入上述合成例7所得之化合物7 8.00g、三乙胺0.060g及二氯甲烷(DCM)40.00g，於室溫下攪拌。其次，於冰浴下，滴下巰基丙基三乙氧基矽烷11.91g經二氯甲烷24.00g所稀釋的溶液，於室溫下攪拌24小時。反應結束後，將反應液濃縮乾燥，而得到15.91g(收率100%)相當於前述式(1A)所示的矽烷化合物之化合物8。
[化14]
1H-NMR(CDCl3,
400MHz): 0.71-0.76ppm(m,2H),1.22ppm(t,J=7.0Hz,9H),1.42ppm(t,J=7.1Hz,3H),1.68-1.76ppm(m,2H),2.59ppm(t,J=7.4Hz,2H),2.89-2.94ppm(m,2H),3.30-3.35ppm(m,2H),3.8appm(q,J=7.0Hz,6H),4.31ppm(q,J=7.1Hz,2H)
(實施例1至實施例8)
使用下述表1中所示的矽烷化合物、水、醋酸及PGME(丙二醇單甲基醚)來製作溶液。然後,使用孔徑0.03μm的聚乙烯製微過濾器進行過濾，以調製單分子層或多分子層形成用組成物。表1中，“PhTMS”表示苯基三甲氧基矽烷(東京化成工業(股)製)，“pTTMS”表示三甲氧基(對甲苯基)矽烷(Gelest公司製)，“ImTES”表示N-(3-三乙氧基矽烷基丙基)-4,5-二氫咪唑(Gelest公司製)。
[圖型化試驗]
使用旋塗機，將實施例1至8所調製的各組成物塗佈在矽晶圓上，於熱板上以100℃烘烤1分鐘。然後，浸漬於由丙二醇單甲基醚70質量%及丙二醇單甲基醚乙酸酯30質重%所成的OK73稀釋劑(東京應化工業(股)製)中1分鐘，旋乾後，在100℃使乾燥30秒，而在矽晶圓上形成單分子層或多分子層。於此層上，藉由旋轉器以旋轉數950rpm塗佈市售的光阻溶液(JSR(股)製，商品名：V146G)，在熱板上以110℃加熱1分鐘，而形成光阻膜(膜厚0.375μm)。其次，使用(股)NIKON製NSR-S205C、KrF掃描器(波長248nm,NA：0.75,ANNULAR)，通過以顯像後的光阻圖型之線寬及線間的寬度設定在0.16μm的光罩，進行曝光。然後，於熱板上以110℃進行1分鐘曝光後加熱。冷卻後，使用0.26當量的氫氧化四甲銨水溶液當作顯像液，進行顯像。
顯像後，以掃描型電子顯微鏡(SEM)觀察所得之各光阻圖型的截面。圖1中顯示使用實施例1及實施例2所調製的組成物之各自的結果。使用實施例1所調製的組成物時，觀察所得之光阻圖型的形狀為筆直形狀。使用實施例2所調製的組成物時，觀察所得之光阻圖型的形狀係具有下切形狀。
另一方面，作為比較例，藉由六甲基二矽氮烷(HMDS)來處理矽晶圓的表面，於該表面上藉由與上述同樣的方法來形成光阻圖型。結果，所得之光阻圖型的形狀為筆直形狀。即，藉由使用本發明的組成物，在矽晶圓上形成單分子層或多分子層，可改變此層上所形成的光阻圖型之底部形狀。茲認來自光阻膜中所含有的光酸產生劑所產生的酸，係藉由與具有酸增殖效果的上述單分子層或多分子層反應，而使磺酸等的酸增殖，故可藉由該酸的作用而改變光阻圖型的底部形狀。
圖1係以掃描型電子顯微鏡(SEM)所觀察的實施例1、實施例2及比較例之光阻圖型的截面圖。
Claims (4)
- 一種單分子層或多分子層形成用組成物，其係含有以下述式(1A)或下述式(1B)所示的矽烷化合物、下述式(2)所示的矽烷化合物及有機溶劑，
- 如申請專利範圍第1項之單分子層或多分子層形成用組成物，其更含有水及有機酸。
- 一種光阻圖型之形成方法，其包含： 使用如申請專利範圍第1或2項之組成物，於半導體基板上形成單分子層或多分子層之步驟、於該單分子層或多分子層上形成光阻膜之步驟、將經該單分子層或多分子層與該光阻膜所被覆的半導體基板曝光之步驟、及於該曝光後，將該光阻膜顯像之步驟。
- 如申請專利範圍第3項之光阻圖型之形成方法，其中前述半導體基板係在表面形成有階差。
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