JP2019083230A5 - - Google Patents
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- Publication number
- JP2019083230A5 JP2019083230A5 JP2017208513A JP2017208513A JP2019083230A5 JP 2019083230 A5 JP2019083230 A5 JP 2019083230A5 JP 2017208513 A JP2017208513 A JP 2017208513A JP 2017208513 A JP2017208513 A JP 2017208513A JP 2019083230 A5 JP2019083230 A5 JP 2019083230A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- semiconductor substrate
- silicon oxide
- impurity region
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 58
- 239000012535 impurity Substances 0.000 claims description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 37
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 36
- 229910052796 boron Inorganic materials 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017208513A JP6978893B2 (ja) | 2017-10-27 | 2017-10-27 | 光電変換装置、その製造方法及び機器 |
| EP18201016.5A EP3477703B1 (en) | 2017-10-27 | 2018-10-17 | Photoelectric conversion device, manufacturing method thereof, and apparatus |
| US16/163,926 US10686086B2 (en) | 2017-10-27 | 2018-10-18 | Photoelectric conversion device, manufacturing method thereof, and apparatus |
| CN201811253732.6A CN109728016B (zh) | 2017-10-27 | 2018-10-26 | 光电转换器件、其制造方法和装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017208513A JP6978893B2 (ja) | 2017-10-27 | 2017-10-27 | 光電変換装置、その製造方法及び機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019083230A JP2019083230A (ja) | 2019-05-30 |
| JP2019083230A5 true JP2019083230A5 (enExample) | 2020-09-24 |
| JP6978893B2 JP6978893B2 (ja) | 2021-12-08 |
Family
ID=63914814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017208513A Active JP6978893B2 (ja) | 2017-10-27 | 2017-10-27 | 光電変換装置、その製造方法及び機器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10686086B2 (enExample) |
| EP (1) | EP3477703B1 (enExample) |
| JP (1) | JP6978893B2 (enExample) |
| CN (1) | CN109728016B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020088291A (ja) * | 2018-11-29 | 2020-06-04 | キヤノン株式会社 | 光電変換装置、光電変換システム、移動体 |
| JPWO2021131539A1 (enExample) * | 2019-12-27 | 2021-07-01 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5466612A (en) * | 1992-03-11 | 1995-11-14 | Matsushita Electronics Corp. | Method of manufacturing a solid-state image pickup device |
| US6541329B1 (en) * | 2001-09-07 | 2003-04-01 | United Microelectronics Corp. | Method for making an active pixel sensor |
| JP2003218341A (ja) * | 2002-01-24 | 2003-07-31 | Sony Corp | 固体撮像素子およびその製造方法 |
| KR100450670B1 (ko) | 2002-02-09 | 2004-10-01 | 삼성전자주식회사 | 포토 다이오드를 갖는 이미지 센서 및 그 제조방법 |
| JP2004172229A (ja) * | 2002-11-18 | 2004-06-17 | Sony Corp | 固体撮像素子及びその製造方法 |
| US7215361B2 (en) * | 2003-09-17 | 2007-05-08 | Micron Technology, Inc. | Method for automated testing of the modulation transfer function in image sensors |
| US7737519B2 (en) | 2004-05-06 | 2010-06-15 | Canon Kabushiki Kaisha | Photoelectric conversion device and manufacturing method thereof |
| JP5230058B2 (ja) | 2004-06-07 | 2013-07-10 | キヤノン株式会社 | 固体撮像装置およびカメラ |
| US7605415B2 (en) | 2004-06-07 | 2009-10-20 | Canon Kabushiki Kaisha | Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring |
| JP4424120B2 (ja) | 2004-08-31 | 2010-03-03 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
| JP4674894B2 (ja) * | 2004-12-28 | 2011-04-20 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| JP4718875B2 (ja) | 2005-03-31 | 2011-07-06 | 株式会社東芝 | 固体撮像素子 |
| KR100746472B1 (ko) * | 2005-09-28 | 2007-08-06 | 매그나칩 반도체 유한회사 | 시모스 이미지센서의 제조방법 |
| JP4679340B2 (ja) * | 2005-11-11 | 2011-04-27 | 株式会社東芝 | 固体撮像装置 |
| JP2007208052A (ja) | 2006-02-02 | 2007-08-16 | Fujifilm Corp | 固体撮像素子 |
| JP2008021875A (ja) | 2006-07-13 | 2008-01-31 | Toshiba Corp | 固体撮像装置 |
| JP4960058B2 (ja) | 2006-10-04 | 2012-06-27 | 株式会社東芝 | 増幅型固体撮像素子 |
| US7795655B2 (en) * | 2006-10-04 | 2010-09-14 | Sony Corporation | Solid-state imaging device and electronic device |
| JP5446281B2 (ja) * | 2008-08-01 | 2014-03-19 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
| US8338248B2 (en) * | 2008-12-25 | 2012-12-25 | National University Corporation Shizuoka University | Semiconductor element and solid-state imaging device |
| JP2010161236A (ja) * | 2009-01-08 | 2010-07-22 | Canon Inc | 光電変換装置の製造方法 |
| JP5500876B2 (ja) * | 2009-06-08 | 2014-05-21 | キヤノン株式会社 | 光電変換装置の製造方法 |
| JP5651982B2 (ja) * | 2010-03-31 | 2015-01-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び電子機器 |
| JP5659707B2 (ja) * | 2010-11-08 | 2015-01-28 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
| JP2012182377A (ja) * | 2011-03-02 | 2012-09-20 | Sony Corp | 固体撮像装置 |
| JP2013016675A (ja) * | 2011-07-05 | 2013-01-24 | Sony Corp | 固体撮像装置、電子機器、及び、固体撮像装置の製造方法 |
| JP5933953B2 (ja) * | 2011-10-06 | 2016-06-15 | キヤノン株式会社 | 半導体装置の製造方法 |
| JP5991739B2 (ja) * | 2012-06-15 | 2016-09-14 | キヤノン株式会社 | 固体撮像装置およびその製造方法、ならびにカメラ |
| JP6122649B2 (ja) | 2013-02-13 | 2017-04-26 | セイコーＮｐｃ株式会社 | 浅い接合を有する紫外線受光素子 |
| JP2014229801A (ja) * | 2013-05-23 | 2014-12-08 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法及び撮像システム |
| JP6345519B2 (ja) * | 2014-07-09 | 2018-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2016092203A (ja) * | 2014-11-04 | 2016-05-23 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| JP2016187018A (ja) * | 2015-03-27 | 2016-10-27 | キヤノン株式会社 | 光電変換装置およびカメラ |
| JP6821291B2 (ja) * | 2015-05-29 | 2021-01-27 | キヤノン株式会社 | 光電変換装置、撮像システムおよび光電変換装置の製造方法 |
| JP6892221B2 (ja) | 2016-03-04 | 2021-06-23 | エイブリック株式会社 | 半導体装置の製造方法 |
-
2017
- 2017-10-27 JP JP2017208513A patent/JP6978893B2/ja active Active
-
2018
- 2018-10-17 EP EP18201016.5A patent/EP3477703B1/en active Active
- 2018-10-18 US US16/163,926 patent/US10686086B2/en active Active
- 2018-10-26 CN CN201811253732.6A patent/CN109728016B/zh active Active
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