JP6978893B2 - 光電変換装置、その製造方法及び機器 - Google Patents

光電変換装置、その製造方法及び機器 Download PDF

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Publication number
JP6978893B2
JP6978893B2 JP2017208513A JP2017208513A JP6978893B2 JP 6978893 B2 JP6978893 B2 JP 6978893B2 JP 2017208513 A JP2017208513 A JP 2017208513A JP 2017208513 A JP2017208513 A JP 2017208513A JP 6978893 B2 JP6978893 B2 JP 6978893B2
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Prior art keywords
photoelectric conversion
semiconductor substrate
impurity region
silicon oxide
oxide film
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Japanese (ja)
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JP2019083230A (ja
JP2019083230A5 (enExample
Inventor
信之 遠藤
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017208513A priority Critical patent/JP6978893B2/ja
Priority to EP18201016.5A priority patent/EP3477703B1/en
Priority to US16/163,926 priority patent/US10686086B2/en
Priority to CN201811253732.6A priority patent/CN109728016B/zh
Publication of JP2019083230A publication Critical patent/JP2019083230A/ja
Publication of JP2019083230A5 publication Critical patent/JP2019083230A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2017208513A 2017-10-27 2017-10-27 光電変換装置、その製造方法及び機器 Active JP6978893B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017208513A JP6978893B2 (ja) 2017-10-27 2017-10-27 光電変換装置、その製造方法及び機器
EP18201016.5A EP3477703B1 (en) 2017-10-27 2018-10-17 Photoelectric conversion device, manufacturing method thereof, and apparatus
US16/163,926 US10686086B2 (en) 2017-10-27 2018-10-18 Photoelectric conversion device, manufacturing method thereof, and apparatus
CN201811253732.6A CN109728016B (zh) 2017-10-27 2018-10-26 光电转换器件、其制造方法和装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017208513A JP6978893B2 (ja) 2017-10-27 2017-10-27 光電変換装置、その製造方法及び機器

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JP2019083230A JP2019083230A (ja) 2019-05-30
JP2019083230A5 JP2019083230A5 (enExample) 2020-09-24
JP6978893B2 true JP6978893B2 (ja) 2021-12-08

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US (1) US10686086B2 (enExample)
EP (1) EP3477703B1 (enExample)
JP (1) JP6978893B2 (enExample)
CN (1) CN109728016B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088291A (ja) * 2018-11-29 2020-06-04 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JPWO2021131539A1 (enExample) * 2019-12-27 2021-07-01

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466612A (en) * 1992-03-11 1995-11-14 Matsushita Electronics Corp. Method of manufacturing a solid-state image pickup device
US6541329B1 (en) * 2001-09-07 2003-04-01 United Microelectronics Corp. Method for making an active pixel sensor
JP2003218341A (ja) * 2002-01-24 2003-07-31 Sony Corp 固体撮像素子およびその製造方法
KR100450670B1 (ko) 2002-02-09 2004-10-01 삼성전자주식회사 포토 다이오드를 갖는 이미지 센서 및 그 제조방법
JP2004172229A (ja) * 2002-11-18 2004-06-17 Sony Corp 固体撮像素子及びその製造方法
US7215361B2 (en) * 2003-09-17 2007-05-08 Micron Technology, Inc. Method for automated testing of the modulation transfer function in image sensors
US7737519B2 (en) 2004-05-06 2010-06-15 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP5230058B2 (ja) 2004-06-07 2013-07-10 キヤノン株式会社 固体撮像装置およびカメラ
US7605415B2 (en) 2004-06-07 2009-10-20 Canon Kabushiki Kaisha Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring
JP4424120B2 (ja) 2004-08-31 2010-03-03 ソニー株式会社 固体撮像装置および固体撮像装置の製造方法
JP4674894B2 (ja) * 2004-12-28 2011-04-20 パナソニック株式会社 固体撮像装置及びその製造方法
JP4718875B2 (ja) 2005-03-31 2011-07-06 株式会社東芝 固体撮像素子
KR100746472B1 (ko) * 2005-09-28 2007-08-06 매그나칩 반도체 유한회사 시모스 이미지센서의 제조방법
JP4679340B2 (ja) * 2005-11-11 2011-04-27 株式会社東芝 固体撮像装置
JP2007208052A (ja) 2006-02-02 2007-08-16 Fujifilm Corp 固体撮像素子
JP2008021875A (ja) 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
JP4960058B2 (ja) 2006-10-04 2012-06-27 株式会社東芝 増幅型固体撮像素子
US7795655B2 (en) * 2006-10-04 2010-09-14 Sony Corporation Solid-state imaging device and electronic device
JP5446281B2 (ja) * 2008-08-01 2014-03-19 ソニー株式会社 固体撮像装置、その製造方法および撮像装置
US8338248B2 (en) * 2008-12-25 2012-12-25 National University Corporation Shizuoka University Semiconductor element and solid-state imaging device
JP2010161236A (ja) * 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP5500876B2 (ja) * 2009-06-08 2014-05-21 キヤノン株式会社 光電変換装置の製造方法
JP5651982B2 (ja) * 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5659707B2 (ja) * 2010-11-08 2015-01-28 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2012182377A (ja) * 2011-03-02 2012-09-20 Sony Corp 固体撮像装置
JP2013016675A (ja) * 2011-07-05 2013-01-24 Sony Corp 固体撮像装置、電子機器、及び、固体撮像装置の製造方法
JP5933953B2 (ja) * 2011-10-06 2016-06-15 キヤノン株式会社 半導体装置の製造方法
JP5991739B2 (ja) * 2012-06-15 2016-09-14 キヤノン株式会社 固体撮像装置およびその製造方法、ならびにカメラ
JP6122649B2 (ja) 2013-02-13 2017-04-26 セイコーＮｐｃ株式会社 浅い接合を有する紫外線受光素子
JP2014229801A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像システム
JP6345519B2 (ja) * 2014-07-09 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2016092203A (ja) * 2014-11-04 2016-05-23 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
JP2016187018A (ja) * 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
JP6821291B2 (ja) * 2015-05-29 2021-01-27 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP6892221B2 (ja) 2016-03-04 2021-06-23 エイブリック株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US20190131468A1 (en) 2019-05-02
CN109728016B (zh) 2023-03-17
US10686086B2 (en) 2020-06-16
JP2019083230A (ja) 2019-05-30
EP3477703A1 (en) 2019-05-01
CN109728016A (zh) 2019-05-07
EP3477703B1 (en) 2021-03-31

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