CN109728016B - 光电转换器件、其制造方法和装置 - Google Patents

光电转换器件、其制造方法和装置 Download PDF

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CN109728016B
CN109728016B CN201811253732.6A CN201811253732A CN109728016B CN 109728016 B CN109728016 B CN 109728016B CN 201811253732 A CN201811253732 A CN 201811253732A CN 109728016 B CN109728016 B CN 109728016B
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semiconductor substrate
impurity region
photoelectric conversion
silicon oxide
oxide film
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CN109728016A (zh
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远藤信之
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/028—Manufacture or treatment of image sensors covered by group H10F39/12 performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201811253732.6A 2017-10-27 2018-10-26 光电转换器件、其制造方法和装置 Active CN109728016B (zh)

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JP2017208513A JP6978893B2 (ja) 2017-10-27 2017-10-27 光電変換装置、その製造方法及び機器
JP2017-208513 2017-10-27

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CN109728016A CN109728016A (zh) 2019-05-07
CN109728016B true CN109728016B (zh) 2023-03-17

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US (1) US10686086B2 (enExample)
EP (1) EP3477703B1 (enExample)
JP (1) JP6978893B2 (enExample)
CN (1) CN109728016B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088291A (ja) * 2018-11-29 2020-06-04 キヤノン株式会社 光電変換装置、光電変換システム、移動体
JPWO2021131539A1 (enExample) * 2019-12-27 2021-07-01

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KR20070035907A (ko) * 2005-09-28 2007-04-02 매그나칩 반도체 유한회사 시모스 이미지센서의 제조방법
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CN102867834A (zh) * 2011-07-05 2013-01-09 索尼公司 固体摄像装置、电子设备和固体摄像装置的制造方法
JP2014229801A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像システム
JP2016018920A (ja) * 2014-07-09 2016-02-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2016187018A (ja) * 2015-03-27 2016-10-27 キヤノン株式会社 光電変換装置およびカメラ
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JP2003218341A (ja) * 2002-01-24 2003-07-31 Sony Corp 固体撮像素子およびその製造方法
KR20030067946A (ko) * 2002-02-09 2003-08-19 삼성전자주식회사 포토 다이오드를 갖는 이미지 센서 및 그 제조방법
JP2004172229A (ja) * 2002-11-18 2004-06-17 Sony Corp 固体撮像素子及びその製造方法
CN1812114A (zh) * 2004-12-28 2006-08-02 松下电器产业株式会社 固态成像装置及其制造方法
KR20070035907A (ko) * 2005-09-28 2007-04-02 매그나칩 반도체 유한회사 시모스 이미지센서의 제조방법
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CN102468314A (zh) * 2010-11-08 2012-05-23 索尼公司 固体摄像器件及其制造方法和电子装置
CN102655158A (zh) * 2011-03-02 2012-09-05 索尼公司 固态成像器件
CN102867834A (zh) * 2011-07-05 2013-01-09 索尼公司 固体摄像装置、电子设备和固体摄像装置的制造方法
JP2014229801A (ja) * 2013-05-23 2014-12-08 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像システム
JP2016018920A (ja) * 2014-07-09 2016-02-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
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US20190131468A1 (en) 2019-05-02
US10686086B2 (en) 2020-06-16
JP2019083230A (ja) 2019-05-30
JP6978893B2 (ja) 2021-12-08
EP3477703A1 (en) 2019-05-01
CN109728016A (zh) 2019-05-07
EP3477703B1 (en) 2021-03-31

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