JP2019145659A5 - - Google Patents
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- JP2019145659A5 JP2019145659A5 JP2018028057A JP2018028057A JP2019145659A5 JP 2019145659 A5 JP2019145659 A5 JP 2019145659A5 JP 2018028057 A JP2018028057 A JP 2018028057A JP 2018028057 A JP2018028057 A JP 2018028057A JP 2019145659 A5 JP2019145659 A5 JP 2019145659A5
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- semiconductor substrate
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 claims 32
- 239000012535 impurity Substances 0.000 claims 23
- 210000000746 body region Anatomy 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 6
- 230000002265 prevention Effects 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018028057A JP6971877B2 (ja) | 2018-02-20 | 2018-02-20 | 半導体装置 |
| US16/248,251 US10950600B2 (en) | 2018-02-20 | 2019-01-15 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018028057A JP6971877B2 (ja) | 2018-02-20 | 2018-02-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019145659A JP2019145659A (ja) | 2019-08-29 |
| JP2019145659A5 true JP2019145659A5 (enExample) | 2020-09-10 |
| JP6971877B2 JP6971877B2 (ja) | 2021-11-24 |
Family
ID=67618201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018028057A Active JP6971877B2 (ja) | 2018-02-20 | 2018-02-20 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US10950600B2 (enExample) |
| JP (1) | JP6971877B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10944001B1 (en) * | 2020-01-06 | 2021-03-09 | Nxp Usa, Inc. | Deep trench and junction hybrid isolation |
| JP7759855B2 (ja) * | 2022-08-10 | 2025-10-24 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3509552B2 (ja) * | 1998-04-30 | 2004-03-22 | 株式会社デンソー | 半導体装置 |
| JP2011029466A (ja) * | 2009-07-28 | 2011-02-10 | Hitachi Ltd | 半導体装置 |
| JP5460279B2 (ja) * | 2009-12-11 | 2014-04-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| US8841723B2 (en) * | 2010-03-10 | 2014-09-23 | Richtek Technology Corporation, R.O.C. | LDMOS device having increased punch-through voltage and method for making same |
| KR101710599B1 (ko) * | 2011-01-12 | 2017-02-27 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| JP6271157B2 (ja) | 2013-05-24 | 2018-01-31 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6252022B2 (ja) * | 2013-08-05 | 2017-12-27 | セイコーエプソン株式会社 | 半導体装置 |
| JP5725230B2 (ja) * | 2014-04-09 | 2015-05-27 | 株式会社デンソー | 半導体装置 |
| JP6383325B2 (ja) * | 2014-06-27 | 2018-08-29 | 株式会社東芝 | 半導体装置 |
| US9306060B1 (en) * | 2014-11-20 | 2016-04-05 | Freescale Semiconductor Inc. | Semiconductor devices and related fabrication methods |
| CN106206561B (zh) * | 2015-04-29 | 2019-05-10 | 无锡华润上华科技有限公司 | Ldmos可控硅结构的静电保护器件 |
| JP6664261B2 (ja) * | 2016-04-07 | 2020-03-13 | キヤノン株式会社 | 半導体装置及び液体吐出ヘッド用基板 |
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2018
- 2018-02-20 JP JP2018028057A patent/JP6971877B2/ja active Active
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2019
- 2019-01-15 US US16/248,251 patent/US10950600B2/en active Active