JP2019057709A - 半導体プロセスモジュールのためのインサイチュ装置 - Google Patents
半導体プロセスモジュールのためのインサイチュ装置 Download PDFInfo
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- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
本開示の態様は、一般に、半導体プロセスで用いられるような処理チャンバ内でのエッジリングの交換のための装置及び方法に関する。
処理チャンバ(例えば、エッチングチャンバ)では、基板は静電的に定位置にクランプされている間にエッチングされる。典型的には、エッジリングと呼ばれる円形部品が基板の外径のすぐ外側に配置され、静電チャックの上面がエッチャントケミストリによりエッチングされることを防止する。エッジリングは幾つかの異なる材料から作られ、様々な形状を有することができ、両方ともエッジリングの近傍でのプロセスの均一性に影響する。処理中に、エッジリングは経時的にエッチングされ、その結果、形状の変化及び処理の均一性の変化が生じる。
Claims (15)
- エッジリングを支持するキャリアであって、
2つの対向する湾曲したエッジを含む周縁部を有するプレートと、
プレート内に配置された第1の複数のリセプタクルであって、各々がリフトピンを内部に受け入れるように構成された第1の複数のリセプタクルと、
プレート内に配置された第2の複数のリセプタクルであって、各々が支持構造と係合するように構成された第2の複数のリセプタクルと、
2つの対向する湾曲したエッジのうちの1つに結合され、プレートの上面の平面の上方に延在する第1の弧状支持構造と、
2つの対向する湾曲したエッジのうちの他方に結合され、プレートの上面の平面の上方に延在する第2の弧状支持構造を含むキャリア。 - プレートは、2つの平行なエッジと、2つの平行なエッジを連結する2つの対向する湾曲したエッジにより画定される周縁部を有する半円形のプレートを含む請求項1記載のキャリア。
- 第1の複数のリセプタクルは、プレートの中心から第2の複数のリセプタクルに対して半径方向内側に配置される請求項1記載のキャリア。
- 第1の複数のリセプタクルの各々は、プレートのボア内に配置されるキャップを含む請求項1記載のキャリア。
- 第1の複数のリセプタクルの各々は、内部に延在する凹部を有する本体を含み、凹部は、長方形又は放物線形状を含む請求項1記載のキャリア。
- 第2の複数のリセプタクルの各々は、プレートの開口部内に配置される本体を含み、本体は、本体に対し拡大された外径を有するフレア部と、本体を貫通するボアを含む請求項1記載のキャリア。
- プレートは、プレーを貫通して形成された複数の開口部を含む請求項1記載のキャリア。
- 第1の弧状支持構造及び第2の弧状支持構造の各々は、その半径方向外側エッジに形成された段差面を含み、各々の段差面は、プレートの上面にほぼ平行に位置する支持面と、支持面の半径方向内側に配置され、プレートの上面にほぼ垂直に配向された垂直壁を含む請求項1記載のキャリア。
- ロボットブレードであって、
ベースと、
ベースから延在する2つのフィンガと、
ベースの上面に結合されたベースキャリア係合フィーチャと、
2つのフィンガの各々1つの上面に結合されたフィンガキャリア係合フィーチャを含むロボットブレード。 - ベースから2つフィンガに向かって駆動するように構成されたローラを更に含み、ベースキャリア係合フィーチャは、ベースの上面に結合されたベースパッドを含み、フィンガキャリア係合フィーチャの各々は、各々のフィンガの遠端部に配置されたエンドパッドを備える請求項9記載のロボットブレード。
- ベースキャリア係合フィーチャはベースの上面に形成された係合ポストを含み、
フィンガキャリア係合フィーチャの各々は、各々のフィンガの上面に形成された係合ポストを含み、
ベースは、その上面に形成された隆起したリッジを含み、
各々のフィンガは、その遠端部において、その上面に形成された隆起したリッジを含み、
2つのフィンガの隆起した隆起したリッジ及びベースの隆起したリッジは、共通の円の弧である請求項9記載のロボットブレード。 - エッジリングを搬送する方法であって、
スリットバルブドアを介してチャンバ内にロボットブレードを挿入する工程であって、ロボットブレードはその上にキャリアとエッジリングを有する工程と
キャリアとその上のエッジリングを基板支持体の上方に位置決めする工程と、
基板リフトピンを駆動し、キャリアをロボットブレードから持ち上げる工程と、
ロボットブレードをチャンバから引き出す工程を含む方法。 - 基板リフトピンを駆動し、キャリアを基板支持体に向けて下降させる工程と、
リフトピンの第2のセットを駆動し、エッジリングをキャリアから持ち上げる工程と、
ロボットブレードをチャンバ内に挿入し、キャリアと係合させる工程と、
チャンバからキャリア及びロボットブレードを除去する工程と、
エッジリングを下降させ、基板支持体と接触させる工程を含む請求項12記載の方法。 - エッジリングを下降させ、基板支持体と接触させる工程は、エッジリングを基板支持体の上面に対して非平行な形態に位置決めし、処理中にプラズマシースの位置を調節することを含む請求項13記載の方法。
- キャリアは、キャリアの中心から第2の複数のリセプタクルに対して半径方向内側に配置された第1の複数のリセプタクルを備え、
第1の複数のリセプタクルの各々は、キャリアを持ち上げるため、リフトピンの各々の1つを受け入れるように構成され、
第2の複数のリセプタクルの各々は、ロボットブレードに係合するように構成される請求項12記載の方法。
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CN109545642A (zh) | 2019-03-29 |
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TWI778133B (zh) | 2022-09-21 |
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KR102641354B1 (ko) | 2024-02-26 |
US20190088531A1 (en) | 2019-03-21 |
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