JP2018516465A5 - - Google Patents
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- Publication number
- JP2018516465A5 JP2018516465A5 JP2017562997A JP2017562997A JP2018516465A5 JP 2018516465 A5 JP2018516465 A5 JP 2018516465A5 JP 2017562997 A JP2017562997 A JP 2017562997A JP 2017562997 A JP2017562997 A JP 2017562997A JP 2018516465 A5 JP2018516465 A5 JP 2018516465A5
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- gas
- substrate
- feature
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 32
- 229910052751 metal Inorganic materials 0.000 claims 25
- 239000002184 metal Substances 0.000 claims 25
- 239000000758 substrate Substances 0.000 claims 23
- 239000007789 gas Substances 0.000 claims 18
- 238000000151 deposition Methods 0.000 claims 8
- 238000005229 chemical vapour deposition Methods 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 6
- 230000006911 nucleation Effects 0.000 claims 6
- 238000010899 nucleation Methods 0.000 claims 6
- 238000000231 atomic layer deposition Methods 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- 239000012159 carrier gas Substances 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562171739P | 2015-06-05 | 2015-06-05 | |
| US62/171,739 | 2015-06-05 | ||
| PCT/US2016/035724 WO2016196937A1 (en) | 2015-06-05 | 2016-06-03 | Ruthenium metal feature fill for interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018516465A JP2018516465A (ja) | 2018-06-21 |
| JP2018516465A5 true JP2018516465A5 (OSRAM) | 2019-07-04 |
| JP7066929B2 JP7066929B2 (ja) | 2022-05-16 |
Family
ID=57441803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017562997A Active JP7066929B2 (ja) | 2015-06-05 | 2016-06-03 | インターコネクトのためのルテニウムメタルによるフィーチャ充填 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9711449B2 (OSRAM) |
| JP (1) | JP7066929B2 (OSRAM) |
| KR (1) | KR102542758B1 (OSRAM) |
| CN (1) | CN107836034B (OSRAM) |
| TW (1) | TWI621161B (OSRAM) |
| WO (1) | WO2016196937A1 (OSRAM) |
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| US10049927B2 (en) * | 2016-06-10 | 2018-08-14 | Applied Materials, Inc. | Seam-healing method upon supra-atmospheric process in diffusion promoting ambient |
| KR102489216B1 (ko) | 2017-01-20 | 2023-01-16 | 도쿄엘렉트론가부시키가이샤 | 상호 접속 구조체 및 그 형성 방법 |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| JP7277871B2 (ja) * | 2017-10-04 | 2023-05-19 | 東京エレクトロン株式会社 | 相互接続のためのルテニウム金属機能フィリング |
| US10790188B2 (en) | 2017-10-14 | 2020-09-29 | Applied Materials, Inc. | Seamless ruthenium gap fill |
| US10672649B2 (en) | 2017-11-08 | 2020-06-02 | International Business Machines Corporation | Advanced BEOL interconnect architecture |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| US10269698B1 (en) | 2017-12-20 | 2019-04-23 | International Business Machines Corporation | Binary metallization structure for nanoscale dual damascene interconnects |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 沈積方法 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| JP7547037B2 (ja) * | 2018-08-20 | 2024-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 周期的堆積プロセスによって基材の誘電体表面上にモリブデン金属膜を堆積させる方法および関連する半導体デバイス構造 |
| JP7182970B2 (ja) * | 2018-09-20 | 2022-12-05 | 東京エレクトロン株式会社 | 埋め込み方法及び処理システム |
| US11631680B2 (en) | 2018-10-18 | 2023-04-18 | Applied Materials, Inc. | Methods and apparatus for smoothing dynamic random access memory bit line metal |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| TW202101734A (zh) * | 2019-02-28 | 2021-01-01 | 日商東京威力科創股份有限公司 | 半導體裝置用的雙重矽化物包繞式接觸窗 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| JP7206355B2 (ja) * | 2020-11-12 | 2023-01-17 | アプライド マテリアルズ インコーポレイテッド | ダイナミックランダムアクセスメモリビット線金属を滑らかにするための方法及び装置 |
| US20220165852A1 (en) * | 2020-11-23 | 2022-05-26 | Applied Materials, Inc. | Methods and apparatus for metal fill in metal gate stack |
| US20220223472A1 (en) | 2021-01-11 | 2022-07-14 | Applied Materials, Inc. | Ruthenium Reflow For Via Fill |
| KR102659491B1 (ko) * | 2021-08-12 | 2024-04-23 | 한국과학기술연구원 | 배선 재료용 저저항 필름의 제조 방법 |
| US20240282709A1 (en) * | 2023-02-22 | 2024-08-22 | Applied Materials, Inc. | Layered Substrate with Ruthenium Layer and Method for Producing |
| US20240355673A1 (en) * | 2023-04-20 | 2024-10-24 | Applied Materials, Inc. | Hybrid molybdenum fill scheme for low resistivity semiconductor applications |
| US20240363410A1 (en) * | 2023-04-25 | 2024-10-31 | Tokyo Electron Limited | Methods for making semiconductor devices that include metal cap layers |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475903B1 (en) | 1993-12-28 | 2002-11-05 | Intel Corporation | Copper reflow process |
| JP3393436B2 (ja) * | 1996-12-03 | 2003-04-07 | ソニー株式会社 | 配線の形成方法 |
| JPH10209157A (ja) * | 1997-01-21 | 1998-08-07 | Hitachi Ltd | 半導体装置の製造方法 |
| KR100227843B1 (ko) * | 1997-01-22 | 1999-11-01 | 윤종용 | 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법 |
| KR100230418B1 (ko) * | 1997-04-17 | 1999-11-15 | 윤종용 | 백금족 금속층 형성방법 및 이를 이용한 커패시터 제조방법 |
| JP2000091269A (ja) * | 1998-09-10 | 2000-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
| KR100408410B1 (ko) * | 2001-05-31 | 2003-12-06 | 삼성전자주식회사 | 엠아이엠(ｍｉｍ) 커패시터를 갖는 반도체 소자 및 그제조 방법 |
| KR100416602B1 (ko) * | 2001-08-08 | 2004-02-05 | 삼성전자주식회사 | 스택형 캐패시터의 제조 방법 |
| US7270848B2 (en) * | 2004-11-23 | 2007-09-18 | Tokyo Electron Limited | Method for increasing deposition rates of metal layers from metal-carbonyl precursors |
| US7273814B2 (en) | 2005-03-16 | 2007-09-25 | Tokyo Electron Limited | Method for forming a ruthenium metal layer on a patterned substrate |
| US7659203B2 (en) * | 2005-03-18 | 2010-02-09 | Applied Materials, Inc. | Electroless deposition process on a silicon contact |
| US20070059502A1 (en) * | 2005-05-05 | 2007-03-15 | Applied Materials, Inc. | Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer |
| JP2010507263A (ja) * | 2006-10-17 | 2010-03-04 | エントン インコーポレイテッド | 超小型電子デバイスの製造におけるフィチャーを埋め込むための銅堆積 |
| US7829454B2 (en) | 2007-09-11 | 2010-11-09 | Tokyo Electron Limited | Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device |
| US7704879B2 (en) * | 2007-09-27 | 2010-04-27 | Tokyo Electron Limited | Method of forming low-resistivity recessed features in copper metallization |
| US7776740B2 (en) * | 2008-01-22 | 2010-08-17 | Tokyo Electron Limited | Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device |
| JP2010067638A (ja) * | 2008-09-08 | 2010-03-25 | Tokyo Electron Ltd | ルテニウム膜の成膜方法 |
| JP2010199349A (ja) | 2009-02-26 | 2010-09-09 | Toshiba Corp | 半導体装置の製造方法 |
| TWI536451B (zh) * | 2010-04-26 | 2016-06-01 | 應用材料股份有限公司 | 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備 |
| US8637390B2 (en) * | 2010-06-04 | 2014-01-28 | Applied Materials, Inc. | Metal gate structures and methods for forming thereof |
| US9048296B2 (en) * | 2011-02-11 | 2015-06-02 | International Business Machines Corporation | Method to fabricate copper wiring structures and structures formed thereby |
| KR101444527B1 (ko) * | 2011-08-05 | 2014-09-24 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법 |
| JP5862353B2 (ja) * | 2011-08-05 | 2016-02-16 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
| KR20130096949A (ko) * | 2012-02-23 | 2013-09-02 | 삼성전자주식회사 | 반도체 소자의 형성 방법 |
| US8517769B1 (en) | 2012-03-16 | 2013-08-27 | Globalfoundries Inc. | Methods of forming copper-based conductive structures on an integrated circuit device |
| US10665503B2 (en) | 2012-04-26 | 2020-05-26 | Applied Materials, Inc. | Semiconductor reflow processing for feature fill |
| TWI576961B (zh) * | 2012-04-26 | 2017-04-01 | 應用材料股份有限公司 | 用於高深寬比塡充的半導體重流處理 |
| JP2014033139A (ja) * | 2012-08-06 | 2014-02-20 | Ulvac Japan Ltd | デバイスの製造方法 |
| EP2779224A3 (en) * | 2013-03-15 | 2014-12-31 | Applied Materials, Inc. | Methods for producing interconnects in semiconductor devices |
| JP2014204014A (ja) * | 2013-04-08 | 2014-10-27 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
-
2016
- 2016-06-03 CN CN201680040035.5A patent/CN107836034B/zh active Active
- 2016-06-03 KR KR1020187000200A patent/KR102542758B1/ko active Active
- 2016-06-03 JP JP2017562997A patent/JP7066929B2/ja active Active
- 2016-06-03 US US15/172,648 patent/US9711449B2/en active Active
- 2016-06-03 TW TW105117505A patent/TWI621161B/zh active
- 2016-06-03 WO PCT/US2016/035724 patent/WO2016196937A1/en not_active Ceased
-
2017
- 2017-07-17 US US15/651,979 patent/US10056328B2/en active Active
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