JP2018207108A5 - - Google Patents

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Publication number
JP2018207108A5
JP2018207108A5 JP2018107498A JP2018107498A JP2018207108A5 JP 2018207108 A5 JP2018207108 A5 JP 2018207108A5 JP 2018107498 A JP2018107498 A JP 2018107498A JP 2018107498 A JP2018107498 A JP 2018107498A JP 2018207108 A5 JP2018207108 A5 JP 2018207108A5
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Japan
Prior art keywords
etching solution
alcohol
ether
glycol
hydroxyl group
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JP2018107498A
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English (en)
Japanese (ja)
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JP7015214B2 (ja
JP2018207108A (ja
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Priority claimed from US15/990,000 external-priority patent/US11186771B2/en
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Publication of JP2018207108A publication Critical patent/JP2018207108A/ja
Publication of JP2018207108A5 publication Critical patent/JP2018207108A5/ja
Priority to JP2021071961A priority Critical patent/JP2021132212A/ja
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JP2018107498A 2017-06-05 2018-06-05 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 Active JP7015214B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021071961A JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US62/515,351 2017-06-05
US15/990,000 2018-05-25
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Related Child Applications (1)

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JP2021071961A Division JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

Publications (3)

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JP2018207108A JP2018207108A (ja) 2018-12-27
JP2018207108A5 true JP2018207108A5 (enExample) 2019-02-14
JP7015214B2 JP7015214B2 (ja) 2022-02-02

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JP2018107498A Active JP7015214B2 (ja) 2017-06-05 2018-06-05 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液
JP2021071961A Withdrawn JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

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JP2021071961A Withdrawn JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

Country Status (8)

Country Link
US (1) US11186771B2 (enExample)
EP (1) EP3422392B1 (enExample)
JP (2) JP7015214B2 (enExample)
KR (1) KR102141447B1 (enExample)
CN (1) CN109054838A (enExample)
IL (1) IL259799B2 (enExample)
SG (1) SG10201804769SA (enExample)
TW (1) TWI683037B (enExample)

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US12134784B2 (en) 2018-11-02 2024-11-05 Public University Corporation Nagoya City University Method for preparing intestinal tract cell layer derived from pluripotent stem cell
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KR102803329B1 (ko) * 2019-08-29 2025-05-07 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법
KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
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IL300758B1 (en) * 2020-08-24 2026-06-01 Basf Se Composition, use and process for selective burning of silicon-germanium material
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR102325905B1 (ko) * 2021-03-22 2021-11-12 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
JP7768825B2 (ja) * 2021-04-22 2025-11-12 花王株式会社 エッチング液
FR3122664B1 (fr) * 2021-05-05 2024-06-28 Dehon Composition de defluxage d’assemblages electroniques
KR20260004549A (ko) * 2021-05-26 2026-01-08 엔테그리스, 아이엔씨. 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법
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