TWI683037B - 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 - Google Patents

於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 Download PDF

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Publication number
TWI683037B
TWI683037B TW107119087A TW107119087A TWI683037B TW I683037 B TWI683037 B TW I683037B TW 107119087 A TW107119087 A TW 107119087A TW 107119087 A TW107119087 A TW 107119087A TW I683037 B TWI683037 B TW I683037B
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Taiwan
Prior art keywords
alcohol
ether
etching solution
glycol
silicon nitride
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TW107119087A
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English (en)
Chinese (zh)
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TW201903207A (zh
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李翊嘉
劉文達
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美商慧盛材料美國責任有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H10P50/20—
    • H10P50/283—
    • H10P50/642—
    • H10P50/644—
    • H10P52/00—
    • H10P70/12—
    • H10P95/70—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
TW107119087A 2017-06-05 2018-06-03 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液 TWI683037B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US62/515351 2017-06-05
US15/990000 2018-05-25
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Publications (2)

Publication Number Publication Date
TW201903207A TW201903207A (zh) 2019-01-16
TWI683037B true TWI683037B (zh) 2020-01-21

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TW107119087A TWI683037B (zh) 2017-06-05 2018-06-03 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液

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Country Link
US (1) US11186771B2 (enExample)
EP (1) EP3422392B1 (enExample)
JP (2) JP7015214B2 (enExample)
KR (1) KR102141447B1 (enExample)
CN (1) CN109054838A (enExample)
IL (1) IL259799B2 (enExample)
SG (1) SG10201804769SA (enExample)
TW (1) TWI683037B (enExample)

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EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC ETCHING SOLUTION AND PROCESS FOR ALUMINUM NITRIDE
US11955341B2 (en) * 2019-03-11 2024-04-09 Versum Materials Us, Llc Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
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KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
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Publication number Publication date
SG10201804769SA (en) 2019-01-30
EP3422392B1 (en) 2021-07-21
EP3422392A1 (en) 2019-01-02
JP2018207108A (ja) 2018-12-27
US20180346811A1 (en) 2018-12-06
IL259799A (en) 2018-07-31
JP7015214B2 (ja) 2022-02-02
KR102141447B1 (ko) 2020-08-05
JP2021132212A (ja) 2021-09-09
CN109054838A (zh) 2018-12-21
KR20180133226A (ko) 2018-12-13
TW201903207A (zh) 2019-01-16
IL259799B2 (en) 2024-01-01
IL259799B1 (en) 2023-09-01
US11186771B2 (en) 2021-11-30

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