JP7015214B2 - 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 - Google Patents

半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 Download PDF

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JP7015214B2
JP7015214B2 JP2018107498A JP2018107498A JP7015214B2 JP 7015214 B2 JP7015214 B2 JP 7015214B2 JP 2018107498 A JP2018107498 A JP 2018107498A JP 2018107498 A JP2018107498 A JP 2018107498A JP 7015214 B2 JP7015214 B2 JP 7015214B2
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alcohol
ether
etching solution
glycol
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JP2018207108A (ja
JP2018207108A5 (enExample
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リ イ－チア
ダー リウ ウェン
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バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H10P50/20—
    • H10P50/283—
    • H10P50/642—
    • H10P50/644—
    • H10P52/00—
    • H10P70/12—
    • H10P95/70—

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Weting (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
JP2018107498A 2017-06-05 2018-06-05 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液 Active JP7015214B2 (ja)

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JP2021071961A JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US62/515,351 2017-06-05
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
US15/990,000 2018-05-25

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JP2021071961A Division JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

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JP2018207108A5 JP2018207108A5 (enExample) 2019-02-14
JP7015214B2 true JP7015214B2 (ja) 2022-02-02

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JP2021071961A Withdrawn JP2021132212A (ja) 2017-06-05 2021-04-21 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液

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US (1) US11186771B2 (enExample)
EP (1) EP3422392B1 (enExample)
JP (2) JP7015214B2 (enExample)
KR (1) KR102141447B1 (enExample)
CN (1) CN109054838A (enExample)
IL (1) IL259799B2 (enExample)
SG (1) SG10201804769SA (enExample)
TW (1) TWI683037B (enExample)

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KR102362365B1 (ko) * 2018-04-11 2022-02-11 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
WO2020091020A1 (ja) 2018-11-02 2020-05-07 公立大学法人名古屋市立大学 多能性幹細胞由来腸管オルガノイドの作製法
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC ETCHING SOLUTION AND PROCESS FOR ALUMINUM NITRIDE
US11955341B2 (en) * 2019-03-11 2024-04-09 Versum Materials Us, Llc Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
IL287656B2 (en) * 2019-05-01 2025-10-01 Fujifilm Electronic Mat Usa Inc Etching compounds
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KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
TWI821833B (zh) 2019-10-09 2023-11-11 美商恩特葛瑞斯股份有限公司 濕式蝕刻組合物
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
WO2022026739A1 (en) * 2020-07-30 2022-02-03 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
KR20230054674A (ko) * 2020-08-24 2023-04-25 바스프 에스이 실리콘-게르마늄 재료를 선택적으로 에칭하기 위한 조성물, 그의 용도 및 방법
KR102315919B1 (ko) 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR102325905B1 (ko) * 2021-03-22 2021-11-12 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR20230173103A (ko) * 2021-04-22 2023-12-26 카오카부시키가이샤 에칭액
FR3122664B1 (fr) * 2021-05-05 2024-06-28 Dehon Composition de defluxage d’assemblages electroniques
EP4347744A4 (en) * 2021-05-26 2025-08-06 Entegris Inc COMPOSITIONS AND METHODS FOR SELECTIVE ETCHING OF SILICON NITRIDE FILMS
EP4098729A1 (en) * 2021-06-01 2022-12-07 Cipelia Non-flammable, volatile and aqueous cleaning composition
WO2022264631A1 (ja) 2021-06-14 2022-12-22 ラサ工業株式会社 エッチング液組成物
KR102782691B1 (ko) * 2021-11-10 2025-03-19 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法
CN116218528B (zh) * 2022-12-08 2025-04-22 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液
JPWO2024122103A1 (enExample) 2022-12-08 2024-06-13
WO2025258498A1 (ja) * 2024-06-10 2025-12-18 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法

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SG10201804769SA (en) 2019-01-30
EP3422392B1 (en) 2021-07-21
EP3422392A1 (en) 2019-01-02
JP2018207108A (ja) 2018-12-27
US20180346811A1 (en) 2018-12-06
IL259799A (en) 2018-07-31
KR102141447B1 (ko) 2020-08-05
JP2021132212A (ja) 2021-09-09
CN109054838A (zh) 2018-12-21
TWI683037B (zh) 2020-01-21
KR20180133226A (ko) 2018-12-13
TW201903207A (zh) 2019-01-16
IL259799B2 (en) 2024-01-01
IL259799B1 (en) 2023-09-01
US11186771B2 (en) 2021-11-30

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