CN109054838A - 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 - Google Patents

用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 Download PDF

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Publication number
CN109054838A
CN109054838A CN201810570790.5A CN201810570790A CN109054838A CN 109054838 A CN109054838 A CN 109054838A CN 201810570790 A CN201810570790 A CN 201810570790A CN 109054838 A CN109054838 A CN 109054838A
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Prior art keywords
etching solution
alcohol
glycol
ether
weight
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Chinese (zh)
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李翊嘉
刘文达
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Versum Materials US LLC
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Versum Materials US LLC
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN201810570790.5A 2017-06-05 2018-06-05 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 Pending CN109054838A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US62/515,351 2017-06-05
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
US15/990,000 2018-05-25

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Publication Number Publication Date
CN109054838A true CN109054838A (zh) 2018-12-21

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US (1) US11186771B2 (enExample)
EP (1) EP3422392B1 (enExample)
JP (2) JP7015214B2 (enExample)
KR (1) KR102141447B1 (enExample)
CN (1) CN109054838A (enExample)
IL (1) IL259799B2 (enExample)
SG (1) SG10201804769SA (enExample)
TW (1) TWI683037B (enExample)

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CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
CN111836873A (zh) * 2018-04-11 2020-10-27 三星Sdi株式会社 氮化硅膜蚀刻组成物与使用其的蚀刻方法
CN113557287A (zh) * 2019-03-11 2021-10-26 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN116218528A (zh) * 2022-12-08 2023-06-06 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液

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KR20190051656A (ko) * 2017-11-07 2019-05-15 삼성전자주식회사 식각 조성물, 실리콘 질화막의 식각 방법, 및 반도체 소자의 제조 방법
WO2020091020A1 (ja) 2018-11-02 2020-05-07 公立大学法人名古屋市立大学 多能性幹細胞由来腸管オルガノイドの作製法
US11929257B2 (en) * 2019-03-11 2024-03-12 Versum Materials Us, Llc Etching solution and method for aluminum nitride
CN114072488B (zh) * 2019-05-01 2024-08-09 富士胶片电子材料美国有限公司 蚀刻组合物
KR102803329B1 (ko) * 2019-08-29 2025-05-07 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법
KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
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IL300758A (en) * 2020-08-24 2023-04-01 Basf Se The composition, its use and a process for selective burning of silicon-germanium material
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR102325905B1 (ko) * 2021-03-22 2021-11-12 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
TW202302817A (zh) * 2021-04-22 2023-01-16 日商花王股份有限公司 蝕刻液
FR3122664B1 (fr) * 2021-05-05 2024-06-28 Dehon Composition de defluxage d’assemblages electroniques
CN117460805A (zh) * 2021-05-26 2024-01-26 恩特格里斯公司 用于选择性蚀刻氮化硅膜的组合物和方法
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US20240279548A1 (en) 2021-06-14 2024-08-22 Rasa Industries, Ltd. Etching solution composition
KR102782691B1 (ko) * 2021-11-10 2025-03-19 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法
KR20250044782A (ko) 2022-12-08 2025-04-01 라사 인더스트리즈, 리미티드 에칭액 조성물

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Cited By (8)

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Publication number Priority date Publication date Assignee Title
CN111836873A (zh) * 2018-04-11 2020-10-27 三星Sdi株式会社 氮化硅膜蚀刻组成物与使用其的蚀刻方法
CN111836873B (zh) * 2018-04-11 2022-06-07 三星Sdi株式会社 用于氮化硅的蚀刻组成物与半导体元件的蚀刻方法
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
CN113557287A (zh) * 2019-03-11 2021-10-26 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN113557287B (zh) * 2019-03-11 2023-03-24 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN116218528A (zh) * 2022-12-08 2023-06-06 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液

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TW201903207A (zh) 2019-01-16
IL259799B1 (en) 2023-09-01
IL259799B2 (en) 2024-01-01
KR20180133226A (ko) 2018-12-13
JP2021132212A (ja) 2021-09-09
EP3422392B1 (en) 2021-07-21
JP7015214B2 (ja) 2022-02-02
US20180346811A1 (en) 2018-12-06
US11186771B2 (en) 2021-11-30
TWI683037B (zh) 2020-01-21
JP2018207108A (ja) 2018-12-27
SG10201804769SA (en) 2019-01-30
IL259799A (en) 2018-07-31
EP3422392A1 (en) 2019-01-02
KR102141447B1 (ko) 2020-08-05

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Application publication date: 20181221