IL259799B2 - Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device - Google Patents

Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Info

Publication number
IL259799B2
IL259799B2 IL259799A IL25979918A IL259799B2 IL 259799 B2 IL259799 B2 IL 259799B2 IL 259799 A IL259799 A IL 259799A IL 25979918 A IL25979918 A IL 25979918A IL 259799 B2 IL259799 B2 IL 259799B2
Authority
IL
Israel
Prior art keywords
weight
etching solution
acid
silicon nitride
present
Prior art date
Application number
IL259799A
Other languages
English (en)
Hebrew (he)
Other versions
IL259799A (en
IL259799B1 (en
Original Assignee
Versum Mat Us Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Mat Us Llc filed Critical Versum Mat Us Llc
Publication of IL259799A publication Critical patent/IL259799A/en
Publication of IL259799B1 publication Critical patent/IL259799B1/en
Publication of IL259799B2 publication Critical patent/IL259799B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
IL259799A 2017-06-05 2018-06-04 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device IL259799B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Publications (3)

Publication Number Publication Date
IL259799A IL259799A (en) 2018-07-31
IL259799B1 IL259799B1 (en) 2023-09-01
IL259799B2 true IL259799B2 (en) 2024-01-01

Family

ID=62528355

Family Applications (1)

Application Number Title Priority Date Filing Date
IL259799A IL259799B2 (en) 2017-06-05 2018-06-04 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Country Status (8)

Country Link
US (1) US11186771B2 (enExample)
EP (1) EP3422392B1 (enExample)
JP (2) JP7015214B2 (enExample)
KR (1) KR102141447B1 (enExample)
CN (1) CN109054838A (enExample)
IL (1) IL259799B2 (enExample)
SG (1) SG10201804769SA (enExample)
TW (1) TWI683037B (enExample)

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KR102362365B1 (ko) * 2018-04-11 2022-02-11 삼성에스디아이 주식회사 실리콘 질화막 에칭 조성물 및 이를 이용한 에칭 방법
WO2020091020A1 (ja) 2018-11-02 2020-05-07 公立大学法人名古屋市立大学 多能性幹細胞由来腸管オルガノイドの作製法
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
US11929257B2 (en) * 2019-03-11 2024-03-12 Versum Materials Us, Llc Etching solution and method for aluminum nitride
EP3938465B1 (en) * 2019-03-11 2025-07-09 Versum Materials US, LLC Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
EP3963036B1 (en) * 2019-05-01 2024-07-10 FUJIFILM Electronic Materials U.S.A, Inc. Method of etching semiconductors
KR102803329B1 (ko) * 2019-08-29 2025-05-07 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법
KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
JP7512378B2 (ja) * 2019-10-09 2024-07-08 インテグリス・インコーポレーテッド 湿式エッチング湿式エッチング組成物及び方法
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
CN116134588A (zh) * 2020-07-30 2023-05-16 恩特格里斯公司 用于选择性蚀刻氮化硅膜的组合物和方法
CN116195036A (zh) * 2020-08-24 2023-05-30 巴斯夫欧洲公司 用于选择性蚀刻硅-锗材料的组合物及其用途和方法
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR102325905B1 (ko) * 2021-03-22 2021-11-12 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR20230173103A (ko) * 2021-04-22 2023-12-26 카오카부시키가이샤 에칭액
FR3122664B1 (fr) * 2021-05-05 2024-06-28 Dehon Composition de defluxage d’assemblages electroniques
US12012540B2 (en) 2021-05-26 2024-06-18 Entegris, Inc. Compositions and methods for selectively etching silicon nitride films
EP4098729A1 (en) * 2021-06-01 2022-12-07 Cipelia Non-flammable, volatile and aqueous cleaning composition
WO2022264631A1 (ja) 2021-06-14 2022-12-22 ラサ工業株式会社 エッチング液組成物
KR102782691B1 (ko) * 2021-11-10 2025-03-19 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法
KR20250044782A (ko) 2022-12-08 2025-04-01 라사 인더스트리즈, 리미티드 에칭액 조성물
CN116218528B (zh) * 2022-12-08 2025-04-22 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液

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US20130065400A1 (en) * 2011-09-12 2013-03-14 Yasuhito Yoshimizu Etching method
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Also Published As

Publication number Publication date
EP3422392A1 (en) 2019-01-02
SG10201804769SA (en) 2019-01-30
US20180346811A1 (en) 2018-12-06
IL259799A (en) 2018-07-31
EP3422392B1 (en) 2021-07-21
US11186771B2 (en) 2021-11-30
KR20180133226A (ko) 2018-12-13
IL259799B1 (en) 2023-09-01
JP2021132212A (ja) 2021-09-09
TW201903207A (zh) 2019-01-16
CN109054838A (zh) 2018-12-21
KR102141447B1 (ko) 2020-08-05
TWI683037B (zh) 2020-01-21
JP7015214B2 (ja) 2022-02-02
JP2018207108A (ja) 2018-12-27

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