JP2018124551A - 表示装置、表示モジュール、及び電子機器 - Google Patents
表示装置、表示モジュール、及び電子機器 Download PDFInfo
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- JP2018124551A JP2018124551A JP2018012215A JP2018012215A JP2018124551A JP 2018124551 A JP2018124551 A JP 2018124551A JP 2018012215 A JP2018012215 A JP 2018012215A JP 2018012215 A JP2018012215 A JP 2018012215A JP 2018124551 A JP2018124551 A JP 2018124551A
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Abstract
【解決手段】表示部、第1の端子群、及び第2の端子群を有する表示装置である。表示部は、複数の画素、複数の走査線、及び複数の信号線を有する。第1の端子群と第2の端子群とは互いに離間して設けられる。第1の端子群は、複数の第1の端子を有する。第2の端子群は、複数の第2の端子を有する。複数の走査線は、それぞれ、行方向に配置される複数の画素と電気的に接続される。複数の信号線は、それぞれ、列方向に配置される複数の画素と電気的に接続される。複数の信号線は、それぞれ、第1の端子または第2の端子と電気的に接続される。表示部は、第1の領域を有する。第1の領域は、第1の端子と電気的に接続される信号線と、第2の端子と電気的に接続される信号線と、が混在する領域である。
【選択図】図1
Description
本実施の形態では、本発明の一態様の表示装置及び表示モジュールについて図1〜図24を用いて説明する。
図1〜図5を用いて本発明の一態様の表示モジュールの構成例について説明する。
図6及び図7を用いて本発明の一態様の表示モジュールの構成例について説明する。なお、以降の構成例において、先の構成例と同様の部分については詳細な説明を省略することがある。
図8(A)〜(E)に、本発明の一態様の表示モジュールにおける、信号線と、当該信号線が信号線駆動回路を介して電気的に接続される基準電圧生成回路との対応関係の例を示す。
図9〜図12を用いて本発明の一態様の表示モジュールの構成例について説明する。
図13〜図15を用いて本発明の一態様の表示モジュールの構成例について説明する。
次に、図16(A)〜(E)を用いて、画素120の構成例を説明する。
本発明の一態様の表示装置が有する表示素子としては、無機EL素子、有機EL素子、LED等の発光素子、液晶素子、電気泳動素子、MEMS(マイクロ・エレクトロ・メカニカル・システム)を用いた表示素子等が挙げられる。
次に、図18〜図21を用いて、表示装置の構成例について説明する。
次に、図22〜図24を用いて、図18〜図21に示した構成とは異なるトランジスタの構成例について説明する。
本発明の一態様で開示されるトランジスタに用いる半導体材料の結晶性は特に限定されず、非晶質半導体、結晶性を有する半導体(微結晶半導体、多結晶半導体、単結晶半導体、または一部に結晶領域を有する半導体)のいずれを用いてもよい。結晶性を有する半導体を用いると、トランジスタ特性の劣化を抑制できるため好ましい。
本実施の形態では、本発明の一態様で開示されるトランジスタの半導体層に用いることができる金属酸化物について説明する。なお、トランジスタの半導体層に金属酸化物を用いる場合、当該金属酸化物を酸化物半導体と読み替えてもよい。
本実施の形態では、トランジスタの半導体層に用いることのできるシリコンの結晶化方法(多結晶シリコンの形成方法)及びレーザ結晶化装置の一例について説明する。
本実施の形態では、本発明の一態様の電子機器について、図27を用いて説明する。
本実施の形態では、本発明の一態様のテレビジョン装置について、図28を用いて説明する。
101 表示部
101a〜101d 領域
102 走査線駆動回路
103 走査線駆動回路
108 分割縞
110 領域
110a〜110d 領域
111 基板
113 基板
115 画素
130a〜130h 端子群
135a〜135h 端子
150a、150b プリント基板
151a〜151d タイミングコントローラ
152a〜152d 基準電圧生成回路
160a〜160h IC
Claims (21)
- 表示部、第1の端子群、及び第2の端子群を有し、
前記表示部は、複数の画素、複数の走査線、及び複数の信号線を有し、
前記第1の端子群と前記第2の端子群とは互いに離間して設けられ、
前記第1の端子群は、複数の第1の端子を有し、
前記第2の端子群は、複数の第2の端子を有し、
前記複数の走査線は、それぞれ、行方向に配置される前記複数の画素と電気的に接続され、
前記複数の信号線は、それぞれ、列方向に配置される前記複数の画素と電気的に接続され、
前記複数の信号線は、それぞれ、前記第1の端子または前記第2の端子と電気的に接続され、
前記表示部は、第1の領域を有し、
前記第1の領域は、前記第1の端子と電気的に接続される信号線と、前記第2の端子と電気的に接続される信号線と、が混在する領域である、表示装置。 - 請求項1において、
前記複数の画素は、2n列(nは2以上の整数)に配置され、
前記第1の領域は、n列目の画素と電気的に接続される信号線と、n+1列目の画素と電気的に接続される信号線と、を含む、表示装置。 - 請求項1において、
前記複数の画素は、n列(nは300以上の整数)に配置され、
前記第1の領域は、2本以上300本以下の信号線を有する、表示装置。 - 請求項1において、
前記複数の画素は、m行n列(m及びnはそれぞれ2以上の整数)に配置され、
前記表示部は、2n本の信号線を有し、
奇数行j列目(jは1以上n以下の整数)の画素と偶数行j列目の画素とは、互いに異なる信号線と電気的に接続される、表示装置。 - 請求項4において、
i−1行j列目(iは1以上m以下の整数)の画素は、前記第1の端子と電気的に接続される信号線と電気的に接続され、
i行j列目の画素は、前記第2の端子と電気的に接続される信号線と電気的に接続される、表示装置。 - 請求項1乃至5のいずれか一において、
前記第1の領域は、前記第1の端子と電気的に接続される信号線と、前記第2の端子と電気的に接続される信号線と、が、1本おきまたは複数本おきに交互に配置される領域である、表示装置。 - 表示部、第1の端子群、及び第2の端子群を有し、
前記表示部は、複数の画素、複数の走査線、複数の第1の信号線、及び複数の第2の信号線を有し、
前記第1の端子群と前記第2の端子群とは互いに離間して設けられ、
前記第1の端子群は、複数の第1の端子を有し、
前記第2の端子群は、複数の第2の端子を有し、
前記複数の走査線は、それぞれ、行方向に配置される前記複数の画素と電気的に接続され、
前記複数の第1の信号線及び前記複数の第2の信号線は、それぞれ、列方向に配置される前記複数の画素と電気的に接続され、
前記複数の第1の信号線は、それぞれ、前記複数の第1の端子の1つと電気的に接続され、
前記複数の第2の信号線は、それぞれ、前記複数の第2の端子の1つと電気的に接続され、
前記表示部は、第1の領域を有し、
前記第1の領域では、前記複数の第1の信号線の1本が、前記複数の第2の信号線の2本の間に位置する、表示装置。 - 請求項7において、
前記複数の画素は、2n列(nは2以上の整数)に配置され、
前記第1の領域は、n列目の画素と、n+1列目の画素と、を含む、表示装置。 - 請求項7において、
前記複数の画素は、n列(nは300以上の整数)に配置され、
前記第1の領域が有する前記複数の第1の信号線と前記複数の第2の信号線の和は、2本以上300本以下である、表示装置。 - 請求項7において、
前記複数の画素は、m行n列(m及びnはそれぞれ2以上の整数)に配置され、
前記表示部が有する前記複数の第1の信号線と前記複数の第2の信号線の和は、2n本であり、
奇数行j列目(jは1以上n以下の整数)の画素と偶数行j列目の画素のうち一方は、それぞれ、前記複数の第1の信号線の1本と電気的に接続され、他方は、それぞれ、前記複数の第2の信号線の1本と電気的に接続される、表示装置。 - 請求項10において、
i−1行j列目(iは1以上m以下の整数)の画素は、前記複数の第1の信号線の1本と電気的に接続され、
i行j列目の画素は、前記複数の第2の信号線の1本と電気的に接続される、表示装置。 - 請求項7乃至11のいずれか一において、
前記第1の領域は、前記複数の第1の信号線と、前記複数の第2の信号線と、が、1本おきまたは複数本おきに交互に配置される領域である、表示装置。 - 請求項1乃至12のいずれか一において、
前記表示部は、第2の領域及び第3の領域を有し、
前記第2の領域と前記第3の領域は、前記第1の領域を挟んで設けられ、
前記第2の領域が有する信号線は、それぞれ、前記第1の端子と電気的に接続され、
前記第3の領域が有する信号線は、それぞれ、前記第2の端子と電気的に接続される、表示装置。 - 請求項1乃至13のいずれか一において、
前記画素は、表示素子と、前記表示素子と電気的に接続されるトランジスタと、を有し、
前記表示素子は、液晶素子または発光素子である、表示装置。 - 請求項14において、
前記トランジスタの半導体層は、非晶質シリコンを含む、表示装置。 - 請求項14において、
前記トランジスタの半導体層は、金属酸化物を含む、表示装置。 - 請求項1乃至16のいずれか一において、
前記表示部は、対角50インチ以上である、表示装置。 - 請求項1乃至17のいずれか一において、
前記表示部は、4K以上の解像度を有する、表示装置。 - 請求項1乃至18のいずれか一に記載の表示装置と、第1の信号線駆動回路と、第2の信号線駆動回路と、を有し、
前記第1の信号線駆動回路は、前記第1の端子群と電気的に接続され、
前記第2の信号線駆動回路は、前記第2の端子群と電気的に接続される、表示モジュール。 - 請求項19において、
さらに、第1の基準電圧生成回路と、第2の基準電圧生成回路と、を有し、
前記第1の基準電圧生成回路は、前記第1の信号線駆動回路と電気的に接続され、
前記第2の基準電圧生成回路は、前記第2の信号線駆動回路と電気的に接続される、表示モジュール。 - 請求項19または20に記載の表示モジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、または操作ボタンの少なくともいずれか一と、を有する、電子機器。
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Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10575376B2 (en) * | 2004-02-25 | 2020-02-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
US10484577B1 (en) * | 2017-08-15 | 2019-11-19 | Facebook Technologies, Llc | Real-time interleaved multi-scan-out |
EP3707698A1 (en) * | 2017-11-06 | 2020-09-16 | IMAX Theatres International Limited | Wide color gamut led pixel with screen-door reduction and high led selection yield |
CN109976562A (zh) * | 2017-12-27 | 2019-07-05 | 鸿富锦精密工业(武汉)有限公司 | 触控显示器 |
CN108320693B (zh) * | 2018-02-27 | 2022-04-19 | 京东方科技集团股份有限公司 | 一种栅极驱动电路及其驱动方法、阵列基板及显示装置 |
CN109273490B (zh) * | 2018-08-20 | 2020-11-24 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法 |
KR102608951B1 (ko) * | 2018-09-06 | 2023-12-04 | 삼성전자주식회사 | 디스플레이 장치 및 디스플레이 장치의 제어방법 |
CN110911382B (zh) * | 2018-09-14 | 2021-06-25 | 群创光电股份有限公司 | 天线装置 |
US11139562B2 (en) * | 2018-09-14 | 2021-10-05 | Innolux Corporation | Antenna device |
CN109326262B (zh) * | 2018-12-03 | 2021-07-09 | 惠科股份有限公司 | 一种显示面板的驱动方法和驱动电路 |
CN109637418B (zh) * | 2019-01-09 | 2022-08-30 | 京东方科技集团股份有限公司 | 一种显示面板及其驱动方法、显示装置 |
JP2020160244A (ja) * | 2019-03-26 | 2020-10-01 | シャープ株式会社 | 表示装置 |
TWI749501B (zh) * | 2019-04-02 | 2021-12-11 | 力領科技股份有限公司 | 顯示裝置 |
US11562249B2 (en) * | 2019-05-01 | 2023-01-24 | International Business Machines Corporation | DNN training with asymmetric RPU devices |
TWI733465B (zh) * | 2019-08-20 | 2021-07-11 | 友達光電股份有限公司 | 顯示面板 |
TWI748645B (zh) * | 2019-09-11 | 2021-12-01 | 矽創電子股份有限公司 | 顯示面板驅動晶片、顯示面板驅動架構及其顯示裝置 |
CN110716355B (zh) * | 2019-10-23 | 2022-05-03 | 厦门天马微电子有限公司 | 显示面板和显示装置 |
CN110738968A (zh) * | 2019-11-29 | 2020-01-31 | 京东方科技集团股份有限公司 | 覆晶薄膜及显示装置 |
KR20210087792A (ko) * | 2020-01-03 | 2021-07-13 | 엘지전자 주식회사 | 사용자 인증 |
TWI812358B (zh) * | 2020-01-22 | 2023-08-11 | 台灣愛司帝科技股份有限公司 | 顯示模組及其影像顯示器 |
JP7379194B2 (ja) * | 2020-02-05 | 2023-11-14 | ラピスセミコンダクタ株式会社 | 表示装置及びソースドライバ |
KR20220072051A (ko) * | 2020-11-24 | 2022-06-02 | 삼성디스플레이 주식회사 | 표시 장치의 제조 장치와 제조 방법 |
CN113674667A (zh) * | 2021-08-09 | 2021-11-19 | Tcl华星光电技术有限公司 | 显示装置及移动终端 |
US11538427B1 (en) * | 2022-01-07 | 2022-12-27 | Stmicroelectronics S.R.L. | High efficiency ghost illumination cancelation in emissive and non-emissive display panels |
US11978416B2 (en) * | 2022-01-07 | 2024-05-07 | Stmicroelectronics S.R.L. | High efficiency ghost illumination cancelation in emissive and non-emissive display panels |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10325962A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Electric Corp | 液晶表示装置ならびに該装置のゲート線およびソース線の形成方法 |
JP2002287721A (ja) * | 2000-12-30 | 2002-10-04 | Lg Phillips Lcd Co Ltd | 液晶表示装置 |
JP2005070722A (ja) * | 2003-08-22 | 2005-03-17 | Ind Technol Res Inst | ディスプレイのゲートドライバ装置 |
JP2005338157A (ja) * | 2004-05-24 | 2005-12-08 | Seiko Epson Corp | 電流供給回路、電流供給装置、電圧供給回路、電圧供給装置、電気光学装置、及び電子機器 |
JP2007096055A (ja) * | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2007164100A (ja) * | 2005-12-16 | 2007-06-28 | Epson Imaging Devices Corp | 表示装置 |
JP2007322747A (ja) * | 2006-05-31 | 2007-12-13 | Sharp Corp | 表示パネル、及び表示装置 |
JP2008216436A (ja) * | 2007-03-01 | 2008-09-18 | Necディスプレイソリューションズ株式会社 | 画像表示装置 |
WO2009148006A1 (ja) * | 2008-06-05 | 2009-12-10 | シャープ株式会社 | 表示装置 |
JP2010176013A (ja) * | 2009-01-30 | 2010-08-12 | Casio Computer Co Ltd | ディスプレイ装置 |
CN102479491A (zh) * | 2010-11-23 | 2012-05-30 | 汉王科技股份有限公司 | 一种双源同屏显示的液晶显示屏及液晶显示装置 |
JP2013178480A (ja) * | 2012-02-28 | 2013-09-09 | Samsung Display Co Ltd | 表示装置 |
JP2016170443A (ja) * | 2016-06-14 | 2016-09-23 | シャープ株式会社 | 液晶表示装置、データ線駆動回路、および液晶表示装置の駆動方法 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR100456151B1 (ko) | 2002-04-17 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
JP2005049822A (ja) * | 2003-07-11 | 2005-02-24 | Seiko Epson Corp | 電気光学装置、及びその駆動方法、並びに電子機器 |
JP2005189758A (ja) * | 2003-12-26 | 2005-07-14 | Sony Corp | 表示デバイス及び投射型表示装置 |
US7575959B2 (en) | 2004-11-26 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
TW200641774A (en) | 2005-04-28 | 2006-12-01 | Sanyo Electric Co | Electroluminescense display device and data line driving circuit |
JP2006308860A (ja) * | 2005-04-28 | 2006-11-09 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
JP4348318B2 (ja) * | 2005-06-07 | 2009-10-21 | シャープ株式会社 | 階調表示基準電圧発生回路および液晶駆動装置 |
EP1995787A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
CN101317212B (zh) * | 2005-11-30 | 2012-07-04 | 夏普株式会社 | 用于驱动显示元件的显示设备和方法 |
KR20070077682A (ko) | 2006-01-24 | 2007-07-27 | 삼성전자주식회사 | 표시장치 |
KR20080078289A (ko) * | 2007-02-23 | 2008-08-27 | 삼성전자주식회사 | 표시 장치 |
JP5116359B2 (ja) * | 2007-05-17 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP5199638B2 (ja) | 2007-10-16 | 2013-05-15 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
KR101433109B1 (ko) | 2007-10-16 | 2014-08-26 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
JP4655085B2 (ja) | 2007-12-21 | 2011-03-23 | ソニー株式会社 | 表示装置及び電子機器 |
KR101376044B1 (ko) * | 2007-12-28 | 2014-04-02 | 삼성디스플레이 주식회사 | 표시장치 및 이의 구동방법 |
JP5376723B2 (ja) | 2008-06-09 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR100994479B1 (ko) | 2008-06-12 | 2010-11-15 | 주식회사 토비스 | 액정 표시 장치 및 영상 표시 방법 |
WO2010128614A1 (en) | 2009-05-02 | 2010-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP5073712B2 (ja) | 2009-06-16 | 2012-11-14 | シャープ株式会社 | データ信号線駆動回路、液晶表示装置、および液晶表示装置の駆動方法 |
KR101319345B1 (ko) * | 2009-08-04 | 2013-10-16 | 엘지디스플레이 주식회사 | 액정 표시장치의 구동장치와 그 구동방법 |
WO2012090817A1 (ja) | 2010-12-27 | 2012-07-05 | シャープ株式会社 | 表示装置およびその製造方法 |
WO2013011855A1 (ja) * | 2011-07-15 | 2013-01-24 | シャープ株式会社 | アクティブマトリクス型表示装置 |
WO2013018597A1 (ja) * | 2011-08-02 | 2013-02-07 | シャープ株式会社 | 表示装置およびその駆動方法 |
JP2013104988A (ja) * | 2011-11-14 | 2013-05-30 | Funai Electric Co Ltd | 液晶表示装置 |
TWI459350B (zh) * | 2012-10-24 | 2014-11-01 | Au Optronics Corp | 顯示面板及其驅動方法 |
US9685131B2 (en) * | 2013-03-15 | 2017-06-20 | Sharp Kabushiki Kaisha | Active-matrix substrate, method of manufacturing active-matrix substrate, and display panel |
JP6196319B2 (ja) | 2013-11-05 | 2017-09-13 | シャープ株式会社 | 表示装置およびその駆動方法 |
KR102317600B1 (ko) * | 2014-07-21 | 2021-10-27 | 삼성디스플레이 주식회사 | 표시 장치 |
US10074333B2 (en) | 2014-09-17 | 2018-09-11 | Sharp Kabushiki Kaisha | Display device and method for driving same |
WO2016080291A1 (ja) | 2014-11-21 | 2016-05-26 | シャープ株式会社 | 表示装置 |
US10228595B2 (en) | 2014-11-21 | 2019-03-12 | Sharp Kabushiki Kaisha | Display device with layered wiring structure for external connection |
US9905312B2 (en) | 2014-12-03 | 2018-02-27 | Nlt Technologies, Ltd. | Shift register circuit, gate driver and display apparatus |
KR102275693B1 (ko) * | 2014-12-22 | 2021-07-09 | 엘지디스플레이 주식회사 | 선택회로 및 이를 구비한 표시장치 |
KR102357288B1 (ko) | 2015-07-31 | 2022-02-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN105185326B (zh) * | 2015-08-12 | 2017-10-17 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及其驱动电路 |
CN105068349A (zh) * | 2015-09-16 | 2015-11-18 | 京东方科技集团股份有限公司 | 阵列基板、显示面板、显示装置以及阵列基板的制作方法 |
CN105390114B (zh) * | 2015-12-15 | 2017-12-22 | 武汉华星光电技术有限公司 | 液晶显示装置 |
KR102385629B1 (ko) | 2017-08-25 | 2022-04-11 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 |
JP6907992B2 (ja) | 2018-04-10 | 2021-07-21 | 株式会社デンソー | 駆動装置および駆動ユニット |
-
2018
- 2018-01-17 US US15/873,174 patent/US10608017B2/en not_active Expired - Fee Related
- 2018-01-19 CN CN201810052526.2A patent/CN108375856B/zh active Active
- 2018-01-19 CN CN202211308325.7A patent/CN115755476A/zh active Pending
- 2018-01-22 TW TW107102179A patent/TWI742228B/zh not_active IP Right Cessation
- 2018-01-23 KR KR1020180008082A patent/KR102561463B1/ko active IP Right Grant
- 2018-01-29 JP JP2018012215A patent/JP7058507B2/ja active Active
-
2020
- 2020-02-19 US US16/794,348 patent/US11329071B2/en active Active
-
2021
- 2021-03-01 US US17/187,928 patent/US11515340B2/en active Active
-
2022
- 2022-04-12 JP JP2022065546A patent/JP2022105023A/ja not_active Withdrawn
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10325962A (ja) * | 1997-05-26 | 1998-12-08 | Mitsubishi Electric Corp | 液晶表示装置ならびに該装置のゲート線およびソース線の形成方法 |
JP2002287721A (ja) * | 2000-12-30 | 2002-10-04 | Lg Phillips Lcd Co Ltd | 液晶表示装置 |
JP2005070722A (ja) * | 2003-08-22 | 2005-03-17 | Ind Technol Res Inst | ディスプレイのゲートドライバ装置 |
JP2005338157A (ja) * | 2004-05-24 | 2005-12-08 | Seiko Epson Corp | 電流供給回路、電流供給装置、電圧供給回路、電圧供給装置、電気光学装置、及び電子機器 |
JP2007096055A (ja) * | 2005-09-29 | 2007-04-12 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
JP2007164100A (ja) * | 2005-12-16 | 2007-06-28 | Epson Imaging Devices Corp | 表示装置 |
JP2007322747A (ja) * | 2006-05-31 | 2007-12-13 | Sharp Corp | 表示パネル、及び表示装置 |
JP2008216436A (ja) * | 2007-03-01 | 2008-09-18 | Necディスプレイソリューションズ株式会社 | 画像表示装置 |
WO2009148006A1 (ja) * | 2008-06-05 | 2009-12-10 | シャープ株式会社 | 表示装置 |
JP2010176013A (ja) * | 2009-01-30 | 2010-08-12 | Casio Computer Co Ltd | ディスプレイ装置 |
CN102479491A (zh) * | 2010-11-23 | 2012-05-30 | 汉王科技股份有限公司 | 一种双源同屏显示的液晶显示屏及液晶显示装置 |
JP2013178480A (ja) * | 2012-02-28 | 2013-09-09 | Samsung Display Co Ltd | 表示装置 |
JP2016170443A (ja) * | 2016-06-14 | 2016-09-23 | シャープ株式会社 | 液晶表示装置、データ線駆動回路、および液晶表示装置の駆動方法 |
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JP2022105023A (ja) | 2022-07-12 |
TW201833646A (zh) | 2018-09-16 |
US20210210512A1 (en) | 2021-07-08 |
CN115755476A (zh) | 2023-03-07 |
JP7058507B2 (ja) | 2022-04-22 |
US20200185421A1 (en) | 2020-06-11 |
CN108375856A (zh) | 2018-08-07 |
TWI742228B (zh) | 2021-10-11 |
KR20180089293A (ko) | 2018-08-08 |
US10608017B2 (en) | 2020-03-31 |
KR102561463B1 (ko) | 2023-08-01 |
US20180219025A1 (en) | 2018-08-02 |
CN108375856B (zh) | 2022-11-04 |
US11515340B2 (en) | 2022-11-29 |
US11329071B2 (en) | 2022-05-10 |
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