JP2018117153A - 基板ホルダ及び基板ホルダ製造方法 - Google Patents
基板ホルダ及び基板ホルダ製造方法 Download PDFInfo
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- JP2018117153A JP2018117153A JP2018068277A JP2018068277A JP2018117153A JP 2018117153 A JP2018117153 A JP 2018117153A JP 2018068277 A JP2018068277 A JP 2018068277A JP 2018068277 A JP2018068277 A JP 2018068277A JP 2018117153 A JP2018117153 A JP 2018117153A
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- B22F10/66—Treatment of workpieces or articles after build-up by mechanical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
【解決手段】リソグラフィ装置用のオブジェクトホルダ(100)は、表面(400a)を有する本体(400)を有する。オブジェクトを支持する複数のバール(406)が薄膜スタック(410,440,450)の表面上又はアパーチャ内に形成される。バールの少なくとも1つは、レーザ焼結によって形成される。レーザ焼結によって形成されるバールの少なくとも1つは、レーザ焼結又はその他の方法によって以前に形成された損傷したバールの補修部分であってもよい。
【選択図】図11
Description
[0001] 本出願は、2012年2月3日出願の米国仮出願第61/594,857号、2012年4月9日出願の米国仮出願第61/621,648号及び2012年4月9日出願の米国仮出願第61/621,660号の利益を主張し、その全体を参照により本明細書に組み込むものとする。
[0031] −放射ビームB(例えばUV放射、DUV放射又はEUV放射)を調節するように構成された照明システム(イルミネータ)ILと、
[0032] −パターニングデバイス(例えばマスク)MAを支持するように構築され、特定のパラメータに従ってパターニングデバイスを正確に位置決めするように構成された第1のポジショナPMに接続された支持構造(例えばマスクテーブル)MTと、
[0033] −基板(例えばレジストコートウェーハ)Wを保持するように構築され、特定のパラメータに従って基板を正確に位置決めするように構成された第2のポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
[0034] −パターニングデバイスMAによって放射ビームBに与えられたパターンを基板Wの目標部分C(例えば1つ以上のダイを含む)に投影するように構成された投影システム(例えば屈折投影レンズシステム)PSと、を備える。
−放射ビームB(例えばEUV放射)を調節するように構成された照明システム(イルミネータ)EILと、
−パターニングデバイス(例えばマスク又はレチクル)MAを支持するように構築され、パターニングデバイスを正確に位置決めするように構成された第1のポジショナPMに接続された支持構造(例えばマスクテーブル)MTと、
−基板(例えばレジストコートウェーハ)Wを保持するように構築され、基板を正確に位置決めするように構成された第2のポジショナPWに接続された基板テーブル(例えばウェーハテーブル)WTと、
−パターニングデバイスMAによって放射ビームBに与えられたパターンを基板Wのターゲット部分C(例えば1つ以上のダイを含む)に投影するように構成された投影システム(例えば反射投影システム)PSと、を備える。
Claims (15)
- リソグラフィ装置で使用するオブジェクトホルダの製造方法であって、
表面を有する本体を提供するステップと、
前記表面から突き出しオブジェクトを支持する端面を有する複数のバールを、前記表面上に形成するステップと、を含み、
少なくとも1つの前記バールの少なくとも一部の形成ステップが、レーザ焼結を含む、方法。 - 前記レーザ焼結が、
前記表面に粉末の層を塗布するステップと、
前記粉末の層を放射ビームで選択的に照射し、照射した場所の前記粉末を少なくとも部分的に溶融させるステップと、
を含む、請求項1に記載の方法。 - 前記レーザ焼結が、
前記表面上のある場所を照射するステップと、
前記照射した場所に粉末を噴射するステップと、
を含む、請求項1に記載の方法。 - 前記本体が、前記少なくとも1つのバールと異なる材料で形成される、請求項1〜3のいずれか一項に記載の方法。
- 前記少なくとも1つのバールが、Ti、Si、溶融石英、コージェライト、ダイヤモンドライクカーボン、SiC、SiO2、AIN、TiN及びCrNからなる群から選択した少なくとも1つの材料を含む、請求項1〜4のいずれか一項に記載の方法。
- 前記少なくとも1つのバールが、マトリクス材料及び前記マトリクス材料内に埋込まれた粒子から形成される、請求項1〜4のいずれか一項に記載の方法。
- 少なくとも1つのバールが、第1の材料の第1の層と、前記第1の材料とは異なる第2の材料の第2の層と、を含む、請求項1〜6のいずれか一項に記載の方法。
- 前記第1及び第2の材料は、特性又は成分が異なる、請求項7に記載の方法。
- 前記オブジェクトが、基板又はパターニングデバイスである、請求項1〜8のいずれか一項に記載の方法。
- 薄膜スタックが前記表面上に提供され、前記複数のバールが前記薄膜スタックよりも前記表面から突き出している、請求項1〜9のいずれか一項に記載の方法。
- リソグラフィ装置で使用するオブジェクトホルダであって、
表面を有する本体と、
前記表面上に提供されオブジェクトを支持する端面を有する複数のバールと、を備え、
少なくとも1つの前記バールの少なくとも一部が、レーザ焼結によって形成される、オブジェクトホルダ。 - 前記オブジェクトホルダが、前記オブジェクトとして、基板、パターニングデバイス、センサ及び光学要素から選択した少なくとも1つを支持する、請求項11に記載のオブジェクトホルダ。
- 薄膜スタックが前記表面上に提供され、前記複数のバールが前記薄膜スタックよりも前記表面から突き出している、請求項11又は12に記載のオブジェクトホルダ。
- 前記オブジェクトホルダが、基板用の基板ホルダ、パターニングデバイスの支持構造、レチクル用のレチクルクランプ及び基板用の基板グリッパのうちの少なくとも1つである、請求項11に記載のオブジェクトホルダ。
- パターニングデバイスを支持する支持構造と、
前記パターニングデバイスによってパターン形成されたビームを基板上に投影する投影システムと、
前記基板を保持する請求項14に記載の基板ホルダと、
を備える、リソグラフィ装置。
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Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
EP2490073B1 (en) | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
NL2008630A (en) | 2011-04-27 | 2012-10-30 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
NL2009487A (en) | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
WO2013113569A1 (en) * | 2012-02-03 | 2013-08-08 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
US9939737B2 (en) * | 2013-01-22 | 2018-04-10 | Asml Netherlands B.V. | Electrostatic clamp |
US10133196B2 (en) | 2014-04-09 | 2018-11-20 | Asml Netherlands B.V. | Apparatus for cleaning an object |
US11061338B2 (en) | 2014-04-17 | 2021-07-13 | Nikon Corporation | High-resolution position encoder with image sensor and encoded target pattern |
US10812695B2 (en) | 2015-09-14 | 2020-10-20 | Nikon Corporation | Three-dimensional positioning system using surface pattern recognition and interpolation |
US9726987B2 (en) | 2014-04-17 | 2017-08-08 | Nikon Corporation | Positioning system using surface pattern recognition and interpolation |
TWI656596B (zh) * | 2014-08-26 | 2019-04-11 | 荷蘭商Asml控股公司 | 靜電夾具及其製造方法 |
CN107206567B (zh) | 2014-11-23 | 2020-12-29 | M丘比德技术公司 | 晶片针钉卡盘制造和修理 |
EP3262677A1 (en) * | 2015-02-23 | 2018-01-03 | M Cubed Technologies Inc. | Film electrode for electrostatic chuck |
TWI647787B (zh) * | 2015-04-02 | 2019-01-11 | 日商愛發科股份有限公司 | 吸附方法及真空處理方法 |
EP3280566A4 (en) * | 2015-04-06 | 2018-12-12 | M Cubed Technologies Inc. | Article having diamond-only contact surfaces |
US9682441B2 (en) * | 2015-06-01 | 2017-06-20 | Caterpillar Inc. | Laser polishing system and method for metal face seal |
DE102015211017B4 (de) * | 2015-06-16 | 2017-06-14 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Verfahren zum hauptzeitparallelen Entladen eines freigeschnittenen Werkstückteils, zugehörige Laserschneidmaschine und Computerprogrammprodukt |
NL2016873A (en) * | 2015-07-02 | 2017-01-17 | Asml Netherlands Bv | A Substrate Holder, a Lithographic Apparatus and Method of Manufacturing Devices. |
EP3334560B1 (en) | 2015-08-14 | 2023-09-13 | M Cubed Technologies Inc. | Method for removing contamination from a chuck surface |
WO2017030873A1 (en) | 2015-08-14 | 2017-02-23 | M Cubed Technologies, Inc. | Wafer chuck featuring reduced friction support surface |
EP3334561B1 (en) | 2015-08-14 | 2023-12-20 | M Cubed Technologies Inc. | Machine for finishing a work piece, and having a highly controllable treatment tool |
EP3334564B1 (en) | 2015-08-14 | 2023-11-15 | M Cubed Technologies Inc. | Method for deterministic finishing of a chuck surface |
CN109791363B (zh) | 2016-07-06 | 2021-01-08 | Asml荷兰有限公司 | 衬底保持器和制造衬底保持器的方法 |
US20180019139A1 (en) * | 2016-07-12 | 2018-01-18 | Ayar Labs, Inc. | Wafer-Level Etching Methods for Planar Photonics Circuits and Devices |
WO2018022670A1 (en) * | 2016-07-26 | 2018-02-01 | M Cubed Technologies, Inc. | Methods for masking a pin chuck, and articles made thereby |
EP3364247A1 (en) * | 2017-02-17 | 2018-08-22 | ASML Netherlands B.V. | Methods & apparatus for monitoring a lithographic manufacturing process |
KR102206687B1 (ko) * | 2017-06-26 | 2021-01-22 | 니뽄 도쿠슈 도교 가부시키가이샤 | 기판 유지 부재 |
JP7096031B2 (ja) * | 2017-06-26 | 2022-07-05 | 日本特殊陶業株式会社 | 基板保持部材 |
CN107275276B (zh) * | 2017-07-12 | 2019-09-03 | 成都海威华芯科技有限公司 | 一种适于半导体行业的晶圆夹具制作方法 |
US10646960B2 (en) * | 2017-10-03 | 2020-05-12 | Lawrence Livermore National Security, Llc | Compact absorptivity measurement system for additive manufacturing |
CN111373327B (zh) * | 2017-11-08 | 2022-07-22 | Asml荷兰有限公司 | 衬底保持器和制造器件的方法 |
US11187998B2 (en) * | 2017-11-20 | 2021-11-30 | Asml Netherlands B.V. | Substrate holder, substrate support and method of clamping a substrate to a clamping system |
JP7164605B2 (ja) * | 2017-12-13 | 2022-11-01 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置で使用するための基板ホルダ |
US10921718B2 (en) | 2017-12-15 | 2021-02-16 | Nikon Corporation | Two-dimensional position encoder |
JP7167158B2 (ja) | 2017-12-20 | 2022-11-08 | エーエスエムエル ホールディング エヌ.ブイ. | 定められたバールトップトポグラフィを有するリソグラフィサポート |
US11845127B2 (en) * | 2018-06-08 | 2023-12-19 | Hewlett-Packard Development Company, L.P. | Powder layer former with flowing gas seal |
US11101617B2 (en) | 2018-07-16 | 2021-08-24 | Ayar Labs, Inc. | Wafer-level handle replacement |
JP7150510B2 (ja) * | 2018-07-30 | 2022-10-11 | 日本特殊陶業株式会社 | 静電チャック |
US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
CN109049445B (zh) * | 2018-09-19 | 2023-09-08 | 河北科技大学 | 一种高精度光纤环圈固化封装设备和处理工艺 |
US20220082945A1 (en) * | 2018-12-28 | 2022-03-17 | Asml Netherlands B.V. | Substrate holder for use in a lithographic apparatus and a method of manufacturing a substrate holder |
US20220134480A1 (en) * | 2019-02-19 | 2022-05-05 | Asml Holding N.V. | Laser roughening: engineering the roughness of the burl top |
CN113508340A (zh) * | 2019-03-01 | 2021-10-15 | Asml荷兰有限公司 | 包括静电夹具的物体保持器 |
DE102019108855B4 (de) * | 2019-04-04 | 2020-11-12 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. | Elektrostatische Haltevorrichtung mit einer Schichtverbund-Elektrodeneinrichtung und Verfahren zu deren Herstellung |
CN111817529A (zh) * | 2019-04-11 | 2020-10-23 | 三赢科技(深圳)有限公司 | 复合镜座的制作方法、音圈马达及电子产品 |
US11491508B2 (en) | 2019-05-16 | 2022-11-08 | Dragonfly Energy Corp. | Systems and methods for dry powder coating layers of an electrochemical cell |
KR20220011128A (ko) * | 2019-05-24 | 2022-01-27 | 에이에스엠엘 홀딩 엔.브이. | 리소그래피 장치, 기판 테이블 및 방법 |
KR102261935B1 (ko) * | 2019-09-25 | 2021-06-07 | (주)탑나노시스 | 작업 스테이지 수선 방법 |
KR102338512B1 (ko) * | 2019-10-30 | 2021-12-10 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
KR20220120580A (ko) * | 2019-12-26 | 2022-08-30 | 에이에스엠엘 홀딩 엔.브이. | 웨이퍼 클램프의 단단한 버얼의 제조 및 개장 |
US11942878B2 (en) * | 2020-04-01 | 2024-03-26 | Bvw Holding Ag | Microstructured field effect device |
CN112643206A (zh) * | 2020-12-29 | 2021-04-13 | 中国科学院长春光学精密机械与物理研究所 | 基于铬膜辅助的飞秒激光诱导超规整纳米光栅的方法 |
DE102021102154A1 (de) | 2021-01-29 | 2022-08-04 | Markus Brzeski | Verfahren zur additiven Fertigung von 3D-Objekten aus thermoplastischem Kunststoff |
US11747741B2 (en) * | 2021-03-05 | 2023-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate stage, substrate processing system using the same, and method for processing substrate |
DE102021115970A1 (de) | 2021-06-21 | 2022-12-22 | Asml Netherlands B.V. | Haltevorrichtung zur Bauteil-Halterung und Verfahren zur Herstellung der Haltevorrichtung |
DE102021206512A1 (de) | 2021-06-24 | 2022-12-29 | Carl Zeiss Smt Gmbh | Verfahren zum Ausbilden einer Noppenstruktur, Haltevorrichtung zur elektrostatischen Halterung eines Bauteils, sowie EUV-Lithographiesystem |
EP4174576A1 (en) * | 2021-10-29 | 2023-05-03 | ASML Netherlands B.V. | Clamp for holding an object and method |
EP4220302A1 (en) | 2022-01-27 | 2023-08-02 | ASML Netherlands B.V. | System for holding an object in a semiconductor manufacturing process, lithographic apparatus provided with said system and method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204324A (ja) * | 1992-12-28 | 1994-07-22 | Hitachi Ltd | ウエハチャック |
JP2007527625A (ja) * | 2004-02-24 | 2007-09-27 | アプライド マテリアルズ インコーポレイテッド | 汚染物質削減基板移送およびサポートシステム |
Family Cites Families (152)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6059104B2 (ja) | 1982-02-03 | 1985-12-23 | 株式会社東芝 | 静電チヤツク板 |
US4551192A (en) * | 1983-06-30 | 1985-11-05 | International Business Machines Corporation | Electrostatic or vacuum pinchuck formed with microcircuit lithography |
FR2592747B1 (fr) | 1986-01-08 | 1988-03-18 | Alsthom | Onduleur a double resonance |
JPH0719831B2 (ja) * | 1986-10-13 | 1995-03-06 | 日本電信電話株式会社 | 静電チヤツク |
JPH0719831Y2 (ja) | 1988-04-11 | 1995-05-10 | パイロットインキ株式会社 | マーキングペンの先端部 |
JPH0547909Y2 (ja) | 1989-08-18 | 1993-12-17 | ||
US5182170A (en) | 1989-09-05 | 1993-01-26 | Board Of Regents, The University Of Texas System | Method of producing parts by selective beam interaction of powder with gas phase reactant |
JPH03187240A (ja) | 1989-12-18 | 1991-08-15 | Nikon Corp | 静電チヤツク |
JPH04103750A (ja) * | 1990-08-22 | 1992-04-06 | Nippon Steel Corp | 耐摩耗被覆層の形成方法 |
US5368947A (en) | 1991-08-12 | 1994-11-29 | The Penn State Research Foundation | Method of producing a slip-resistant substrate by depositing raised, bead-like configurations of a compatible material at select locations thereon, and a substrate including same |
JP3258042B2 (ja) | 1991-08-21 | 2002-02-18 | キヤノン株式会社 | ウエハチャック |
JP3095514B2 (ja) | 1992-01-29 | 2000-10-03 | キヤノン株式会社 | 基板保持盤 |
JPH0719831A (ja) | 1993-06-18 | 1995-01-20 | Fujitsu General Ltd | 画像認識処理装置 |
US5583736A (en) | 1994-11-17 | 1996-12-10 | The United States Of America As Represented By The Department Of Energy | Micromachined silicon electrostatic chuck |
US6033475A (en) | 1994-12-27 | 2000-03-07 | Tokyo Electron Limited | Resist processing apparatus |
JPH08227933A (ja) | 1995-02-20 | 1996-09-03 | Shin Etsu Chem Co Ltd | 静電吸着機能を有するウエハ加熱装置 |
JPH0992703A (ja) | 1995-09-22 | 1997-04-04 | Hitachi Ltd | コレットおよびそのコレットを取り付けた移送装置 |
JP3319693B2 (ja) | 1995-10-30 | 2002-09-03 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JPH09148379A (ja) * | 1995-11-22 | 1997-06-06 | Taiyo Yuden Co Ltd | 突起電極形成方法 |
US5838529A (en) | 1995-12-22 | 1998-11-17 | Lam Research Corporation | Low voltage electrostatic clamp for substrates such as dielectric substrates |
JPH09199574A (ja) * | 1996-01-23 | 1997-07-31 | Sumitomo Metal Ind Ltd | セラミックス製ウエハ保持台及びその製造方法 |
JPH09270327A (ja) | 1996-03-29 | 1997-10-14 | Tokin Corp | 電子部品及びその製造方法 |
JPH09283605A (ja) * | 1996-04-09 | 1997-10-31 | Canon Inc | 基板の吸着保持装置およびその製造方法 |
US5751537A (en) | 1996-05-02 | 1998-05-12 | Applied Materials, Inc. | Multielectrode electrostatic chuck with fuses |
US6046426A (en) | 1996-07-08 | 2000-04-04 | Sandia Corporation | Method and system for producing complex-shape objects |
US5885654A (en) | 1996-08-14 | 1999-03-23 | Tokyo Ohka Kogyo Co., Ltd. | Polysilazane-based coating solution for interlayer insulation |
FR2774931B1 (fr) * | 1998-02-19 | 2000-04-28 | Arnaud Hory | Procede de prototypage rapide par frittage laser de poudre et dispositif associe |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US6122564A (en) | 1998-06-30 | 2000-09-19 | Koch; Justin | Apparatus and methods for monitoring and controlling multi-layer laser cladding |
PL364804A1 (en) * | 1998-09-28 | 2004-12-13 | Frenton Ltd. | Method of manufacturing a diamond composite and a composite produced by same |
US6709747B1 (en) | 1998-09-28 | 2004-03-23 | Skeleton Technologies Ag | Method of manufacturing a diamond composite and a composite produced by same |
JP2000174105A (ja) | 1998-12-03 | 2000-06-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体ウエハの保持装置 |
JP2000202626A (ja) | 1999-01-20 | 2000-07-25 | Daido Steel Co Ltd | 硬質肉盛層付きAl系構造体及びそれに用いる肉盛用複合材料 |
JP2000311933A (ja) * | 1999-04-27 | 2000-11-07 | Canon Inc | 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法 |
TW594426B (en) | 1999-06-11 | 2004-06-21 | Asml Netherlands Bv | Lithographic projection apparatus, integrated circuit manufacturing method and integrated circuit made thereby |
JP2003518193A (ja) | 1999-11-16 | 2003-06-03 | トリトン・システムズ・インコーポレイテツド | 不連続強化金属基複合材料のレーザー加工 |
ES2264237T3 (es) * | 1999-12-07 | 2006-12-16 | Alliedsignal Bremsbelag Gmbh | Procedimiento para la fabricacion de placas de soporte para forros de freno. |
JP2001237303A (ja) | 2000-02-22 | 2001-08-31 | Sumitomo Metal Ind Ltd | ウェハ用真空チャックおよびその製造方法 |
JP4700819B2 (ja) * | 2000-03-10 | 2011-06-15 | キヤノン株式会社 | 基板保持装置、半導体製造装置および半導体デバイス製造方法 |
JP4753460B2 (ja) | 2000-08-16 | 2011-08-24 | 株式会社クリエイティブ テクノロジー | 静電チャック及びその製造方法 |
US6495802B1 (en) | 2001-05-31 | 2002-12-17 | Motorola, Inc. | Temperature-controlled chuck and method for controlling the temperature of a substantially flat object |
DE10157647C5 (de) * | 2001-11-26 | 2012-03-08 | Cl Schutzrechtsverwaltungs Gmbh | Verfahren zur Herstellung von dreidimensionalen Werkstücken in einer Laser-Materialbearbeitungsanlage oder einer Stereolitographieanlage |
EP1359466A1 (en) | 2002-05-01 | 2003-11-05 | ASML Netherlands B.V. | Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method |
TWI238348B (en) | 2002-05-13 | 2005-08-21 | Kyocera Corp | Portable information terminal, display control device, display control method, and recording media |
JP2004022859A (ja) | 2002-06-18 | 2004-01-22 | Murata Mfg Co Ltd | 積層セラミックコンデンサおよびその製造方法 |
JP4061131B2 (ja) * | 2002-06-18 | 2008-03-12 | キヤノンアネルバ株式会社 | 静電吸着装置 |
US7092231B2 (en) | 2002-08-23 | 2006-08-15 | Asml Netherlands B.V. | Chuck, lithographic apparatus and device manufacturing method |
US20040055709A1 (en) * | 2002-09-19 | 2004-03-25 | Applied Materials, Inc. | Electrostatic chuck having a low level of particle generation and method of fabricating same |
SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
JP3813932B2 (ja) * | 2003-02-03 | 2006-08-23 | 株式会社東芝 | 化合物半導体多層膜のドライエッチング方法 |
EP1475666A1 (en) | 2003-05-06 | 2004-11-10 | ASML Netherlands B.V. | Substrate holder for lithographic apparatus |
CN1310285C (zh) * | 2003-05-12 | 2007-04-11 | 东京毅力科创株式会社 | 处理装置 |
TW201445617A (zh) | 2003-06-13 | 2014-12-01 | 尼康股份有限公司 | 基板載台、曝光裝置 |
EP1491953A1 (en) | 2003-06-23 | 2004-12-29 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
JP2005029401A (ja) | 2003-07-08 | 2005-02-03 | Iwasaki Electric Co Ltd | 光源用反射鏡および光源ユニット |
EP1498777A1 (en) | 2003-07-15 | 2005-01-19 | ASML Netherlands B.V. | Substrate holder and lithographic projection apparatus |
SG108996A1 (en) | 2003-07-23 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
EP1507172A1 (en) * | 2003-08-12 | 2005-02-16 | ASML Netherlands B.V. | Lithographic apparatus and apparatus adjustment method |
US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
EP1510868A1 (en) * | 2003-08-29 | 2005-03-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005136025A (ja) | 2003-10-29 | 2005-05-26 | Trecenti Technologies Inc | 半導体製造装置、半導体装置の製造方法及びウエハステージ |
US7019820B2 (en) * | 2003-12-16 | 2006-03-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2267535A1 (en) | 2003-11-05 | 2010-12-29 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method |
US7245357B2 (en) | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
ITPR20040018A1 (it) | 2004-03-09 | 2004-06-09 | Sig Technology Ag | Macchina etichettatrice con dispositivo di saldatura ad ultrasuoni per realizzare una etichetta tubolare in film termoretraibile e procedimento di saldatura. |
US7524735B1 (en) | 2004-03-25 | 2009-04-28 | Novellus Systems, Inc | Flowable film dielectric gap fill process |
US7133120B2 (en) | 2004-05-04 | 2006-11-07 | Asml Netherlands B.V. | Lithographic apparatus, article support member, and method |
WO2005124835A1 (ja) * | 2004-06-21 | 2005-12-29 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7050147B2 (en) | 2004-07-08 | 2006-05-23 | Asml Netherlands B.V. | Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus |
US7304715B2 (en) | 2004-08-13 | 2007-12-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
US7532310B2 (en) * | 2004-10-22 | 2009-05-12 | Asml Netherlands B.V. | Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck |
US7327439B2 (en) | 2004-11-16 | 2008-02-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9557656B2 (en) * | 2004-12-01 | 2017-01-31 | Nikon Corporation | Stage apparatus and exposure apparatus |
US7255747B2 (en) * | 2004-12-22 | 2007-08-14 | Sokudo Co., Ltd. | Coat/develop module with independent stations |
US20070017160A1 (en) | 2005-07-22 | 2007-01-25 | Caldwell Steven G | Composite materials and method for making same |
CN1320108C (zh) | 2005-08-08 | 2007-06-06 | 中国林业科学研究院林业研究所 | 一种防止植物愈伤组织褐化现象产生的方法 |
EP1770443B1 (en) | 2005-09-28 | 2016-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and exposure method |
US20070097346A1 (en) * | 2005-10-28 | 2007-05-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7564536B2 (en) * | 2005-11-08 | 2009-07-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070139855A1 (en) | 2005-12-21 | 2007-06-21 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing an electrostatic clamp for a lithographic apparatus |
US7626681B2 (en) * | 2005-12-28 | 2009-12-01 | Asml Netherlands B.V. | Lithographic apparatus and method |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007201068A (ja) | 2006-01-25 | 2007-08-09 | Taiheiyo Cement Corp | 静電チャック |
US7646581B2 (en) * | 2006-01-31 | 2010-01-12 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck |
JP2007258240A (ja) | 2006-03-20 | 2007-10-04 | Tokyo Electron Ltd | 表面処理方法 |
JP4873405B2 (ja) * | 2006-03-24 | 2012-02-08 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
EP1840657A1 (en) | 2006-03-28 | 2007-10-03 | Carl Zeiss SMT AG | Support structure for temporarily supporting a substrate |
JP2007329008A (ja) | 2006-06-07 | 2007-12-20 | Tokyo Electron Ltd | 熱板及びその製造方法 |
JP5019811B2 (ja) * | 2006-07-20 | 2012-09-05 | 東京エレクトロン株式会社 | 静電吸着電極の補修方法 |
US8325321B2 (en) | 2006-07-28 | 2012-12-04 | Mapper Lithography Ip B.V. | Lithography system, method of heat dissipation and frame |
DE102007005780A1 (de) | 2006-08-10 | 2008-02-14 | Carl Zeiss Smt Ag | Verbundstruktur für die Mikrolithographie und optische Anordnung |
JP2008085129A (ja) * | 2006-09-28 | 2008-04-10 | Taiheiyo Cement Corp | 基板載置装置 |
TW200830034A (en) | 2006-10-13 | 2008-07-16 | Asahi Glass Co Ltd | Method of smoothing surface of substrate for EUV mask blank, and EUV mask blank obtained by the method |
JP4890421B2 (ja) * | 2006-10-31 | 2012-03-07 | 太平洋セメント株式会社 | 静電チャック |
US9067792B1 (en) | 2006-11-03 | 2015-06-30 | Semlux Technologies, Inc. | Laser conversion of high purity silicon powder to densified granular forms |
JP2008160093A (ja) | 2006-11-29 | 2008-07-10 | Toto Ltd | 静電チャック、静電チャックの製造方法および基板処理装置 |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080138504A1 (en) * | 2006-12-08 | 2008-06-12 | Coorstek, Inc. | Coatings for components of semiconductor wafer fabrication equipment |
US7791708B2 (en) * | 2006-12-27 | 2010-09-07 | Asml Netherlands B.V. | Lithographic apparatus, substrate table, and method for enhancing substrate release properties |
JP4874133B2 (ja) | 2007-02-02 | 2012-02-15 | パナソニック株式会社 | 金型およびその製造方法 |
KR20090008658A (ko) | 2007-07-18 | 2009-01-22 | 삼성전자주식회사 | 소자분리막을 갖는 반도체 소자의 제조방법 |
US7940511B2 (en) * | 2007-09-21 | 2011-05-10 | Asml Netherlands B.V. | Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp |
US20090122458A1 (en) * | 2007-11-14 | 2009-05-14 | Varian Semiconductor Epuipment Associated, Inc. | Embossed electrostatic chuck |
US20090138504A1 (en) | 2007-11-26 | 2009-05-28 | International Business Machines Corporation | Electronic calendar scheduling method |
JP4894770B2 (ja) | 2008-01-30 | 2012-03-14 | 株式会社フェローテックセラミックス | 炭化珪素/窒化硼素複合材料焼結体、その製造方法およびその焼結体を用いた部材 |
NL1036460A1 (nl) | 2008-02-20 | 2009-08-24 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
KR200449275Y1 (ko) | 2008-02-25 | 2010-06-28 | 정지융 | 일회용 이쑤시개 겸용 식사도구 받침대 |
JP2009246302A (ja) * | 2008-03-31 | 2009-10-22 | Lintec Corp | ダイソートテープ |
NL1036715A1 (nl) | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus. |
US8421993B2 (en) | 2008-05-08 | 2013-04-16 | Asml Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
EP2131241B1 (en) | 2008-05-08 | 2019-07-31 | ASML Netherlands B.V. | Fluid handling structure, lithographic apparatus and device manufacturing method |
TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
US7883988B2 (en) | 2008-06-04 | 2011-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor substrate |
WO2010019430A2 (en) | 2008-08-12 | 2010-02-18 | Applied Materials, Inc. | Electrostatic chuck assembly |
JP2010161319A (ja) | 2009-01-09 | 2010-07-22 | Nikon Corp | 静電吸着保持装置、露光装置及びデバイスの製造方法 |
JP5193886B2 (ja) * | 2009-01-14 | 2013-05-08 | 株式会社巴川製紙所 | 静電チャック装置の補修方法および補修装置、ならびに静電チャック装置 |
WO2010090948A1 (en) | 2009-02-04 | 2010-08-12 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
KR20100092221A (ko) | 2009-02-12 | 2010-08-20 | 삼성전자주식회사 | 실린더형 커패시터 하부 전극을 포함하는 반도체 메모리 소자 |
US8582274B2 (en) | 2009-02-18 | 2013-11-12 | Ulvac, Inc. | Tray for transporting wafers and method for fixing wafers onto the tray |
NL2004153A (en) * | 2009-02-24 | 2010-08-25 | Asml Netherlands Bv | Lithographic apparatus, a method for removing material of one or more protrusions on a support surface, and an article support system. |
KR101680787B1 (ko) | 2009-05-15 | 2016-11-29 | 엔테그리스, 아이엔씨. | 중합체 돌기들을 가지는 정전 척 |
US20110036990A1 (en) * | 2009-08-12 | 2011-02-17 | Varian Semiconductor Equipment Associates, Inc. | Platen to control charge accumulation |
JP5561989B2 (ja) * | 2009-10-02 | 2014-07-30 | 太陽ホールディングス株式会社 | レーザーを用いたパターン形成方法 |
EP2317546A1 (en) * | 2009-10-30 | 2011-05-04 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method of making a support structure |
DE102009051351B4 (de) | 2009-10-30 | 2014-07-10 | Siemens Aktiengesellschaft | Schienenfahrzeug mit Füllstandsüberwachung eines Abwasserbehälters |
JP5641765B2 (ja) | 2009-11-02 | 2014-12-17 | キヤノン株式会社 | 情報処理装置、認証方法、及びコンピュータプログラム |
JP5423632B2 (ja) * | 2010-01-29 | 2014-02-19 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP2011192991A (ja) | 2010-03-12 | 2011-09-29 | Asml Netherlands Bv | リソグラフィ装置および方法 |
WO2012005294A1 (ja) | 2010-07-09 | 2012-01-12 | 株式会社クリエイティブ テクノロジー | 静電チャック装置及びその製造方法 |
NL2006913A (en) | 2010-07-16 | 2012-01-17 | Asml Netherlands Bv | Lithographic apparatus and method. |
NL2007768A (en) | 2010-12-14 | 2012-06-18 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
TWI441589B (zh) | 2011-01-07 | 2014-06-11 | Taiwan Green Point Entpr Co | A composite structure and its manufacturing method |
JP5989673B2 (ja) * | 2011-02-01 | 2016-09-07 | エーエスエムエル ネザーランズ ビー.ブイ. | 基板テーブル、リソグラフィ装置、およびデバイス製造方法 |
EP2490073B1 (en) * | 2011-02-18 | 2015-09-23 | ASML Netherlands BV | Substrate holder, lithographic apparatus, and method of manufacturing a substrate holder |
NL2008178A (nl) | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | Lithographic apparatus and stage system. |
NL2008630A (en) | 2011-04-27 | 2012-10-30 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
JP5063797B2 (ja) * | 2011-05-23 | 2012-10-31 | 京セラ株式会社 | 吸着部材、吸着装置および吸着方法 |
NL2009487A (en) | 2011-10-14 | 2013-04-16 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, device manufacturing method, and method of manufacturing a substrate holder. |
NL2009874A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Support, lithographic apparatus and device manufacturing method. |
NL2009858A (en) | 2011-12-27 | 2013-07-01 | Asml Netherlands Bv | Substrate holder, lithographic apparatus, and device manufacturing method. |
WO2013113569A1 (en) * | 2012-02-03 | 2013-08-08 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
EP2839342A1 (en) | 2012-04-19 | 2015-02-25 | ASML Netherlands B.V. | Substrate holder, lithographic apparatus, and device manufacturing method |
WO2014084060A1 (ja) | 2012-11-28 | 2014-06-05 | 京セラ株式会社 | 載置用部材およびその製造方法 |
KR20160013916A (ko) | 2013-05-23 | 2016-02-05 | 가부시키가이샤 니콘 | 기판 유지 방법 및 장치, 그리고 노광 방법 및 장치 |
US9220333B2 (en) | 2013-11-27 | 2015-12-29 | Msa Technology, Llc | Adjustable lumbar support for mounting on a backpack and backpack having the same |
EP3280566A4 (en) | 2015-04-06 | 2018-12-12 | M Cubed Technologies Inc. | Article having diamond-only contact surfaces |
JP6867149B2 (ja) * | 2015-12-25 | 2021-04-28 | 日本特殊陶業株式会社 | 基板保持部材 |
JP7278035B2 (ja) * | 2018-06-20 | 2023-05-19 | 新光電気工業株式会社 | 静電チャック、基板固定装置 |
EP3882700A1 (en) * | 2020-03-16 | 2021-09-22 | ASML Netherlands B.V. | Object holder, tool and method of manufacturing an object holder |
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