JP7278035B2 - 静電チャック、基板固定装置 - Google Patents
静電チャック、基板固定装置 Download PDFInfo
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- JP7278035B2 JP7278035B2 JP2018117331A JP2018117331A JP7278035B2 JP 7278035 B2 JP7278035 B2 JP 7278035B2 JP 2018117331 A JP2018117331 A JP 2018117331A JP 2018117331 A JP2018117331 A JP 2018117331A JP 7278035 B2 JP7278035 B2 JP 7278035B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Description
[基板固定装置の構造]
図1は、第1の実施の形態に係る基板固定装置を簡略化して例示する図であり、図1(a)は断面図、図1(b)は図1(a)の熱電対のみを示す部分拡大斜視図である。
基板固定装置1は、ベースプレート10の一方の面10aに搭載された静電チャック30により吸着対象物である基板(ウェハ等)を吸着保持する装置である。
図2及び図3は、第1の実施の形態に係る基板固定装置の製造工程を例示する図である。図2及び図3を参照しながら、基板固定装置1の製造工程について説明する。
第1の実施の形態の変形例1では、制御部を有していない基板固定装置の例を示す。なお、第1の実施の形態の変形例1において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
10 ベースプレート
10x、10y 貫通孔
20 接着層
30 静電チャック
31 基体
31a 載置面
32 静電電極
32P、33P、341P、342P 金属ペースト
33 発熱体
34 熱電対
34c 測温接点
40 制御部
311、312、313、314、315 セラミックグリーンシート
341 第1金属部
341a 第1水平部
341b 第1垂直部
342 第2金属部
342a 第2水平部
342b 第2垂直部
343 第1線材部
344 第2線材部
Claims (5)
- 吸着対象物を吸着保持する載置面を備えた基体と、
前記基体の温度を検出する熱電対と、を有し、
前記熱電対は、
前記基体の内部に設けられ、一端同士が接合されて測温接点を形成する第1金属部及び第2金属部と、
一端が前記基体の内部で前記第1金属部の他端と直接接合され、他端が前記基体の外部に延伸する第1線材部と、
一端が前記基体の内部で前記第2金属部の他端と直接接合され、他端が前記基体の外部に延伸する第2線材部と、を備え、
前記第1金属部と前記第1線材部とは第1の材料から形成され、
前記第2金属部と前記第2線材部とは前記第1の材料とは異なる第2の材料から形成され、
前記第1金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第1水平部と、前記第1水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第1垂直部と、を有し、
前記第2金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第2水平部と、前記第2水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第2垂直部と、を有し、
前記基体は、電圧を印加することで前記吸着対象物との間にクーロン力を発生させる静電電極と、電圧を印加することで発熱する発熱体と、を内蔵し、
前記第1水平部及び前記第2水平部は、前記基体の厚さ方向の前記静電電極及び前記発熱体とは異なる位置に配置され、
前記第1金属部及び前記第2金属部は、前記基体により被覆され、かつ前記発熱体をまたぐように配置されている静電チャック。 - 前記第1金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第1水平部と、前記第1水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第1垂直部と、を有し、
前記第2金属部は、前記載置面と平行な方向に延伸し一端が前記測温接点である第2水平部と、前記第2水平部の他端から前記載置面と垂直な方向に延伸して端部が前記基体から露出する第2垂直部と、を有し、
前記第1垂直部の前記端部が前記第1線材部と接合され、前記第2垂直部の前記端部が前記第2線材部と接合されている請求項1に記載の静電チャック。 - 前記第1の材料及び前記第2の材料は、前記基体の焼成温度よりも融点が高い導電材料である請求項1又は2に記載の静電チャック。
- ベースプレートと、
前記ベースプレートの一方の面に搭載された請求項1乃至3の何れか一項に記載の静電チャックと、を有し、
前記第1線材部は、前記ベースプレートに設けられた第1貫通孔に挿入され、他端が前記ベースプレートの他方の面から露出し、
前記第2線材部は、前記ベースプレートに設けられた第2貫通孔に挿入され、他端が前記ベースプレートの他方の面から露出している基板固定装置。 - ベースプレートと、
前記ベースプレートの一方の面に搭載された請求項1乃至3の何れか一項に記載の静電チャックと、
前記熱電対から得られる熱起電力に基づいて前記基体の温度を算出する制御部と、を有し、
前記第1線材部は、前記ベースプレートに設けられた第1貫通孔に挿入され、他端が前記制御部と電気的に接続され、
前記第2線材部は、前記ベースプレートに設けられた第2貫通孔に挿入され、他端が前記制御部と電気的に接続されている基板固定装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018117331A JP7278035B2 (ja) | 2018-06-20 | 2018-06-20 | 静電チャック、基板固定装置 |
US16/434,226 US10957574B2 (en) | 2018-06-20 | 2019-06-07 | Electrostatic chuck and substrate fixing apparatus |
KR1020190068474A KR20190143369A (ko) | 2018-06-20 | 2019-06-11 | 정전 척 및 기판 고정 장치 |
CN201910519459.5A CN110620075A (zh) | 2018-06-20 | 2019-06-14 | 静电夹盘及基板固定装置 |
TW108120639A TWI827619B (zh) | 2018-06-20 | 2019-06-14 | 靜電夾盤及基板固定裝置 |
Applications Claiming Priority (1)
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JP2018117331A JP7278035B2 (ja) | 2018-06-20 | 2018-06-20 | 静電チャック、基板固定装置 |
Publications (2)
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JP2019220593A JP2019220593A (ja) | 2019-12-26 |
JP7278035B2 true JP7278035B2 (ja) | 2023-05-19 |
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JP2018117331A Active JP7278035B2 (ja) | 2018-06-20 | 2018-06-20 | 静電チャック、基板固定装置 |
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US (1) | US10957574B2 (ja) |
JP (1) | JP7278035B2 (ja) |
KR (1) | KR20190143369A (ja) |
CN (1) | CN110620075A (ja) |
TW (1) | TWI827619B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013113569A1 (en) * | 2012-02-03 | 2013-08-08 | Asml Netherlands B.V. | Substrate holder and method of manufacturing a substrate holder |
JP7329917B2 (ja) * | 2018-11-30 | 2023-08-21 | 新光電気工業株式会社 | 基板固定装置 |
JP7304188B2 (ja) * | 2019-03-29 | 2023-07-06 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
WO2023190785A1 (ja) * | 2022-03-29 | 2023-10-05 | 京セラ株式会社 | 流路構造体および半導体製造装置 |
WO2023190786A1 (ja) * | 2022-03-29 | 2023-10-05 | 京セラ株式会社 | 流路構造体および半導体製造装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286331A (ja) | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2006196864A (ja) | 2004-12-14 | 2006-07-27 | Ngk Insulators Ltd | アルミナ部材及びその製造方法 |
US20170032935A1 (en) | 2015-07-27 | 2017-02-02 | Lam Research Corporation | Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods for Operation, Monitoring, and Control |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040011781A1 (en) * | 1999-12-29 | 2004-01-22 | Ibiden Co., Ltd. | Ceramic heater |
JP2002025913A (ja) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用サセプタとそれを用いた半導体製造装置 |
US20090100841A1 (en) * | 2007-10-19 | 2009-04-23 | Jerome Kahn | System for reclamation of waste thermal energy |
JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
JP5618638B2 (ja) * | 2010-06-07 | 2014-11-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置または試料載置台 |
JP5855402B2 (ja) * | 2010-09-24 | 2016-02-09 | 日本碍子株式会社 | サセプター及びその製法 |
KR101605079B1 (ko) * | 2015-05-20 | 2016-03-22 | (주)울텍 | 급속 열처리 장치 |
US10935437B2 (en) * | 2018-03-26 | 2021-03-02 | Rosemount Aerospace Inc | Coaxial high temperature thermocouple background |
-
2018
- 2018-06-20 JP JP2018117331A patent/JP7278035B2/ja active Active
-
2019
- 2019-06-07 US US16/434,226 patent/US10957574B2/en active Active
- 2019-06-11 KR KR1020190068474A patent/KR20190143369A/ko not_active Application Discontinuation
- 2019-06-14 CN CN201910519459.5A patent/CN110620075A/zh active Pending
- 2019-06-14 TW TW108120639A patent/TWI827619B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000286331A (ja) | 1999-03-31 | 2000-10-13 | Kyocera Corp | ウエハ支持部材 |
JP2006196864A (ja) | 2004-12-14 | 2006-07-27 | Ngk Insulators Ltd | アルミナ部材及びその製造方法 |
US20170032935A1 (en) | 2015-07-27 | 2017-02-02 | Lam Research Corporation | Electrostatic Chuck Including Embedded Faraday Cage for RF Delivery and Associated Methods for Operation, Monitoring, and Control |
Also Published As
Publication number | Publication date |
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TWI827619B (zh) | 2024-01-01 |
KR20190143369A (ko) | 2019-12-30 |
US10957574B2 (en) | 2021-03-23 |
CN110620075A (zh) | 2019-12-27 |
TW202002156A (zh) | 2020-01-01 |
JP2019220593A (ja) | 2019-12-26 |
US20190393068A1 (en) | 2019-12-26 |
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