JP2018113679A - 基板間のキャビティ内に形成されてビアを含む電子デバイスを製造する方法 - Google Patents

基板間のキャビティ内に形成されてビアを含む電子デバイスを製造する方法 Download PDF

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JP2018113679A
JP2018113679A JP2017231535A JP2017231535A JP2018113679A JP 2018113679 A JP2018113679 A JP 2018113679A JP 2017231535 A JP2017231535 A JP 2017231535A JP 2017231535 A JP2017231535 A JP 2017231535A JP 2018113679 A JP2018113679 A JP 2018113679A
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substrate
wafer
sidewall
metal
layer
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JP2018113679A5 (enExample
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敦 鷹野
Atsushi Takano
敦 鷹野
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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    • H03—ELECTRONIC CIRCUITRY
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    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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    • H10N30/01—Manufacture or treatment
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    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
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    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
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    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
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    • H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
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    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
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    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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    • B23K2101/00—Articles made by soldering, welding or cutting
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
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    • B23K2101/42—Printed circuits
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
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    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
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    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2017231535A 2016-12-02 2017-12-01 基板間のキャビティ内に形成されてビアを含む電子デバイスを製造する方法 Pending JP2018113679A (ja)

Applications Claiming Priority (24)

Application Number Priority Date Filing Date Title
US201662429223P 2016-12-02 2016-12-02
US201662429179P 2016-12-02 2016-12-02
US201662429186P 2016-12-02 2016-12-02
US201662429190P 2016-12-02 2016-12-02
US201662429226P 2016-12-02 2016-12-02
US201662429218P 2016-12-02 2016-12-02
US201662429188P 2016-12-02 2016-12-02
US201662429183P 2016-12-02 2016-12-02
US62/429,218 2016-12-02
US62/429,179 2016-12-02
US62/429,223 2016-12-02
US62/429,186 2016-12-02
US62/429,190 2016-12-02
US62/429,188 2016-12-02
US62/429,183 2016-12-02
US62/429,226 2016-12-02
US201762539861P 2017-08-01 2017-08-01
US201762539871P 2017-08-01 2017-08-01
US201762539863P 2017-08-01 2017-08-01
US201762539873P 2017-08-01 2017-08-01
US62/539,863 2017-08-01
US62/539,873 2017-08-01
US62/539,871 2017-08-01
US62/539,861 2017-08-01

Publications (2)

Publication Number Publication Date
JP2018113679A true JP2018113679A (ja) 2018-07-19
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021118477A (ja) * 2020-01-28 2021-08-10 太陽誘電株式会社 圧電デバイスおよびその製造方法
US11895771B2 (en) 2020-11-23 2024-02-06 Samsung Electro-Mechanics Co., Ltd. Printed circuit board

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6270506B2 (ja) * 2014-01-27 2018-01-31 オリンパス株式会社 積層型超音波振動デバイスおよび超音波医療装置
US10541152B2 (en) 2014-07-31 2020-01-21 Skyworks Solutions, Inc. Transient liquid phase material bonding and sealing structures and methods of forming same
CN105448869A (zh) 2014-07-31 2016-03-30 天工方案公司 多层瞬态液相接合
US10965269B2 (en) 2016-12-02 2021-03-30 Skyworks Solutions, Inc. Electronic devices formed in a cavity between substrates and including a via
KR20180134238A (ko) * 2017-06-08 2018-12-18 (주)와이솔 웨이퍼레벨패키지 및 제조방법
KR102292154B1 (ko) * 2017-08-29 2021-08-23 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
US10418294B1 (en) * 2018-05-15 2019-09-17 Texas Instruments Incorporated Semiconductor device package with a cap to selectively exclude contact with mold compound
US11251769B2 (en) 2018-10-18 2022-02-15 Skyworks Solutions, Inc. Bulk acoustic wave components
US10903186B2 (en) 2018-10-19 2021-01-26 Toyota Motor Engineering & Manufacturing North America, Inc. Power electronic assemblies with solder layer and exterior coating, and methods of forming the same
US11430758B2 (en) * 2018-12-29 2022-08-30 Texas Instruments Incorporated Creating 3D features through selective laser annealing and/or laser ablation
CN109795980B (zh) * 2019-01-08 2020-09-29 上海华虹宏力半导体制造有限公司 Mems器件的制造方法
JP7246775B2 (ja) * 2019-07-19 2023-03-28 中芯集成電路（寧波）有限公司上海分公司 Ｂａｗ共振器のパッケージングモジュールおよびパッケージング方法
US11581870B2 (en) * 2019-09-27 2023-02-14 Skyworks Solutions, Inc. Stacked acoustic wave resonator package with laser-drilled VIAS
CN111130493B (zh) * 2019-12-31 2021-03-12 诺思(天津)微系统有限责任公司 具有叠置单元的半导体结构及制造方法、电子设备
CN111606297B (zh) * 2020-04-28 2021-04-16 诺思(天津)微系统有限责任公司 器件结构及其制造方法、滤波器、电子设备
CN111786647B (zh) * 2020-08-07 2021-06-15 展讯通信（上海）有限公司 晶圆级声表面波滤波器与封装方法
US20220321090A1 (en) * 2021-03-31 2022-10-06 Skyworks Solutions, Inc. Self-shielded acoustic wave device package
WO2022209749A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 高周波モジュール及び通信装置
US12542533B2 (en) 2021-08-27 2026-02-03 Skyworks Solutions, Inc. Packaged surface acoustic wave device with conductive roof supporting structure
US12407315B2 (en) 2021-11-08 2025-09-02 Skyworks Solutions, Inc. Stacked filter package having multiple types of acoustic wave devices
US20230245979A1 (en) * 2022-02-01 2023-08-03 Skyworks Solutions, Inc. Shielded wafer level chip scale package with shield connected to ground via a seal ring
CN115276601B (zh) * 2022-09-29 2023-01-06 苏州汉天下电子有限公司 一种测试用谐振器、制备方法及谐振器的测试方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004194290A (ja) * 2002-11-26 2004-07-08 Murata Mfg Co Ltd 電子部品の製造方法
JP2006197554A (ja) * 2004-12-17 2006-07-27 Seiko Epson Corp 弾性表面波デバイス及びその製造方法、ｉｃカード、携帯用電子機器
JP2006246112A (ja) * 2005-03-04 2006-09-14 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその製造方法
JP2007082867A (ja) * 2005-09-26 2007-04-05 Ge Medical Systems Global Technology Co Llc Ｍｒｉ装置
JP2008252351A (ja) * 2007-03-29 2008-10-16 Murata Mfg Co Ltd 弾性表面波素子及びその製造方法
JP2009177736A (ja) * 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2011223234A (ja) * 2010-04-08 2011-11-04 Seiko Epson Corp 圧電振動子、圧電デバイス、貫通電極構造、半導体装置、半導体パッケージ
JP2015091065A (ja) * 2013-11-06 2015-05-11 太陽誘電株式会社 電子部品およびモジュール

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3439231A (en) 1967-02-13 1969-04-15 Mallory & Co Inc P R Hermetically encapsulated electronic device
EP0364214B1 (en) * 1988-10-11 1995-01-11 Sony Corporation Optical wavelength conversion devices
US5448014A (en) * 1993-01-27 1995-09-05 Trw Inc. Mass simultaneous sealing and electrical connection of electronic devices
JPH1050638A (ja) * 1996-07-29 1998-02-20 Mitsubishi Electric Corp 半導体装置の製造方法
US6521477B1 (en) 2000-02-02 2003-02-18 Raytheon Company Vacuum package fabrication of integrated circuit components
US6578754B1 (en) * 2000-04-27 2003-06-17 Advanpack Solutions Pte. Ltd. Pillar connections for semiconductor chips and method of manufacture
JP2002289768A (ja) * 2000-07-17 2002-10-04 Rohm Co Ltd 半導体装置およびその製法
US6884313B2 (en) * 2001-01-08 2005-04-26 Fujitsu Limited Method and system for joining and an ultra-high density interconnect
KR100396551B1 (ko) 2001-02-03 2003-09-03 삼성전자주식회사 웨이퍼 레벨 허메틱 실링 방법
TW560018B (en) * 2001-10-30 2003-11-01 Asia Pacific Microsystems Inc A wafer level packaged structure and method for manufacturing the same
US6793829B2 (en) 2002-02-27 2004-09-21 Honeywell International Inc. Bonding for a micro-electro-mechanical system (MEMS) and MEMS based devices
US7832177B2 (en) 2002-03-22 2010-11-16 Electronics Packaging Solutions, Inc. Insulated glazing units
JP2004095849A (ja) * 2002-08-30 2004-03-25 Fujikura Ltd 貫通電極付き半導体基板の製造方法、貫通電極付き半導体デバイスの製造方法
JP3892370B2 (ja) 2002-09-04 2007-03-14 富士通メディアデバイス株式会社 弾性表面波素子、フィルタ装置及びその製造方法
US7089635B2 (en) * 2003-02-25 2006-08-15 Palo Alto Research Center, Incorporated Methods to make piezoelectric ceramic thick film arrays and elements
US7183622B2 (en) * 2004-06-30 2007-02-27 Intel Corporation Module integrating MEMS and passive components
JP4513513B2 (ja) * 2004-11-09 2010-07-28 株式会社村田製作所 電子部品の製造方法
US7400042B2 (en) 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
JP2006345170A (ja) * 2005-06-08 2006-12-21 Toshiba Corp 薄膜圧電共振器
JP2007019132A (ja) * 2005-07-06 2007-01-25 Seiko Epson Corp 圧電振動装置の製造方法
JP4517992B2 (ja) 2005-09-14 2010-08-04 セイコーエプソン株式会社 導通孔形成方法、並びに圧電デバイスの製造方法、及び圧電デバイス
US7936062B2 (en) * 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US7892972B2 (en) * 2006-02-03 2011-02-22 Micron Technology, Inc. Methods for fabricating and filling conductive vias and conductive vias so formed
JP2007266294A (ja) * 2006-03-28 2007-10-11 Kyocera Corp 半導体素子集積デバイス、半導体装置およびその製造方法
US20090004500A1 (en) 2007-06-26 2009-01-01 Daewoong Suh Multilayer preform for fast transient liquid phase bonding
KR20150068495A (ko) 2007-11-30 2015-06-19 스카이워크스 솔루션즈, 인코포레이티드 플립 칩 실장을 이용하는 웨이퍼 레벨 패키징
CN101946401B (zh) 2008-02-18 2014-09-03 精工电子水晶科技股份有限公司 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟
JP2009200093A (ja) * 2008-02-19 2009-09-03 Murata Mfg Co Ltd 中空型の電子部品
DE102008025202B4 (de) 2008-05-27 2014-11-06 Epcos Ag Hermetisch geschlossenes Gehäuse für elektronische Bauelemente und Herstellungsverfahren
JP5610177B2 (ja) * 2008-07-09 2014-10-22 国立大学法人東北大学 機能デバイス及びその製造方法
WO2010021267A1 (ja) * 2008-08-21 2010-02-25 株式会社村田製作所 電子部品装置およびその製造方法
US8686622B2 (en) * 2009-07-30 2014-04-01 Ngk Insulators, Ltd. Composite substrate and method for manufacturing the same
US8348139B2 (en) 2010-03-09 2013-01-08 Indium Corporation Composite solder alloy preform
JP5640610B2 (ja) 2010-09-29 2014-12-17 三菱マテリアル株式会社 パワーモジュール用基板の製造装置
US8592986B2 (en) 2010-11-09 2013-11-26 Rohm Co., Ltd. High melting point soldering layer alloyed by transient liquid phase and fabrication method for the same, and semiconductor device
DE102011016554B4 (de) * 2011-04-08 2018-11-22 Snaptrack, Inc. Waferlevel-Package und Verfahren zur Herstellung
US8513806B2 (en) 2011-06-30 2013-08-20 Rohm Co., Ltd. Laminated high melting point soldering layer formed by TLP bonding and fabrication method for the same, and semiconductor device
DE112012002879B4 (de) * 2011-07-08 2018-03-01 Murata Manufacturing Co., Ltd. Schaltungsmodul
JP2013055632A (ja) * 2011-08-11 2013-03-21 Nippon Dempa Kogyo Co Ltd 気密封止パッケージ及びこの気密封止パッケージの製造方法
JP5588419B2 (ja) * 2011-10-26 2014-09-10 株式会社東芝 パッケージ
US9773750B2 (en) * 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
JP5837845B2 (ja) * 2012-02-23 2015-12-24 京セラ株式会社 電子部品の製造方法及び電子部品
US9044822B2 (en) * 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
KR102061695B1 (ko) * 2012-10-17 2020-01-02 삼성전자주식회사 웨이퍼 가공 방법
DE102012110542B4 (de) 2012-11-05 2017-04-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Selbstaktivierender Dünnschichtgetter in reaktiven Mehrschichtsystemen
DE102012112058B4 (de) * 2012-12-11 2020-02-27 Snaptrack, Inc. MEMS-Bauelement und Verfahren zur Verkapselung von MEMS-Bauelementen
TW201427113A (zh) 2012-12-21 2014-07-01 財團法人工業技術研究院 發光二極體封裝的固晶方法和固晶結構
US9406577B2 (en) * 2013-03-13 2016-08-02 Globalfoundries Singapore Pte. Ltd. Wafer stack protection seal
JP6061248B2 (ja) 2013-03-29 2017-01-18 国立研究開発法人産業技術総合研究所 接合方法及び半導体モジュールの製造方法
JP6385648B2 (ja) * 2013-05-14 2018-09-05 太陽誘電株式会社 弾性波デバイス、及び弾性波デバイスの製造方法
JP6374240B2 (ja) * 2013-07-05 2018-08-15 トヨタ モーター エンジニアリング アンド マニュファクチャリング ノース アメリカ，インコーポレイティド 両面パワーモジュールのための液相拡散接合プロセス
JP6158676B2 (ja) 2013-10-15 2017-07-05 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
US9634641B2 (en) * 2013-11-06 2017-04-25 Taiyo Yuden Co., Ltd. Electronic module having an interconnection substrate with a buried electronic device therein
US9793877B2 (en) * 2013-12-17 2017-10-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Encapsulated bulk acoustic wave (BAW) resonator device
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
CN105448869A (zh) 2014-07-31 2016-03-30 天工方案公司 多层瞬态液相接合
US10541152B2 (en) 2014-07-31 2020-01-21 Skyworks Solutions, Inc. Transient liquid phase material bonding and sealing structures and methods of forming same
DE112015003845T5 (de) 2014-08-22 2017-05-18 Kabushiki Kaisha Toyota Jidoshokki Bondaufbau, Bondmaterieal und Bondverfahren
US9893116B2 (en) * 2014-09-16 2018-02-13 Toshiba Memory Corporation Manufacturing method of electronic device and manufacturing method of semiconductor device
US10196745B2 (en) * 2014-10-31 2019-02-05 General Electric Company Lid and method for sealing a non-magnetic package
JP2016096265A (ja) * 2014-11-14 2016-05-26 株式会社東芝 デバイスの製造方法
US9847310B2 (en) * 2015-07-18 2017-12-19 Semiconductor Components Industries, Llc Flip chip bonding alloys
KR20180082622A (ko) * 2015-12-08 2018-07-18 스카이워크스 솔루션즈, 인코포레이티드 캐리어 웨이퍼를 사용하여 웨이퍼-레벨 칩-스케일 패키지에서 보호 캐비티 및 집적 패시브 컴포넌트들을 제공하는 방법
JP6718837B2 (ja) * 2016-04-01 2020-07-08 スカイワークスフィルターソリューションズジャパン株式会社 電子部品とその製造方法、及び電子装置とその製造方法
US10965269B2 (en) 2016-12-02 2021-03-30 Skyworks Solutions, Inc. Electronic devices formed in a cavity between substrates and including a via
KR102064380B1 (ko) * 2018-06-22 2020-01-10 (주)와이솔 표면 탄성파 소자 패키지 및 그 제조 방법
US11251769B2 (en) * 2018-10-18 2022-02-15 Skyworks Solutions, Inc. Bulk acoustic wave components

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004194290A (ja) * 2002-11-26 2004-07-08 Murata Mfg Co Ltd 電子部品の製造方法
JP2006197554A (ja) * 2004-12-17 2006-07-27 Seiko Epson Corp 弾性表面波デバイス及びその製造方法、ｉｃカード、携帯用電子機器
JP2006246112A (ja) * 2005-03-04 2006-09-14 Matsushita Electric Ind Co Ltd 弾性表面波デバイスおよびその製造方法
JP2007082867A (ja) * 2005-09-26 2007-04-05 Ge Medical Systems Global Technology Co Llc Ｍｒｉ装置
JP2008252351A (ja) * 2007-03-29 2008-10-16 Murata Mfg Co Ltd 弾性表面波素子及びその製造方法
JP2009177736A (ja) * 2008-01-28 2009-08-06 Murata Mfg Co Ltd 電子部品の製造方法
JP2011223234A (ja) * 2010-04-08 2011-11-04 Seiko Epson Corp 圧電振動子、圧電デバイス、貫通電極構造、半導体装置、半導体パッケージ
JP2015091065A (ja) * 2013-11-06 2015-05-11 太陽誘電株式会社 電子部品およびモジュール

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021118477A (ja) * 2020-01-28 2021-08-10 太陽誘電株式会社 圧電デバイスおよびその製造方法
JP7456788B2 (ja) 2020-01-28 2024-03-27 太陽誘電株式会社 圧電デバイスおよびその製造方法
US11895771B2 (en) 2020-11-23 2024-02-06 Samsung Electro-Mechanics Co., Ltd. Printed circuit board

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