TW201427113A - 發光二極體封裝的固晶方法和固晶結構 - Google Patents

發光二極體封裝的固晶方法和固晶結構 Download PDF

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Publication number
TW201427113A
TW201427113A TW101149187A TW101149187A TW201427113A TW 201427113 A TW201427113 A TW 201427113A TW 101149187 A TW101149187 A TW 101149187A TW 101149187 A TW101149187 A TW 101149187A TW 201427113 A TW201427113 A TW 201427113A
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Taiwan
Prior art keywords
metal layer
metal
layer
solid crystal
substrate
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TW101149187A
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English (en)
Inventor
Tung-Han Chuang
Jian-Shian Lin
Ying-Tsun Su
Meng-Chi Huang
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Ind Tech Res Inst
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Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW101149187A priority Critical patent/TW201427113A/zh
Priority to CN201310036408.XA priority patent/CN103887404A/zh
Priority to US13/901,816 priority patent/US20140175495A1/en
Priority to KR1020130070364A priority patent/KR20140081654A/ko
Publication of TW201427113A publication Critical patent/TW201427113A/zh

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    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract

一種發光二極體封裝的固晶方法和結構，其中固晶結構包含一具有透光特性且形成於一發光二極體晶片的一基板的一表面上的黏著層、一形成於黏著層上的第一金屬層、一形成於封裝基板上的第二金屬層，以及複數個金屬化合層。金屬化合層是由設置在第一金屬層和第二金屬層中至少一個上的一第三金屬層在加熱後擴散至第一金屬層和第二金屬層中所形成。第一金屬層和第二金屬層的熔點高於第三屬層的熔點。藉此，可提高發光二極體晶片和封裝基板接合的可靠性和發光二極體的發光效率。

Description

發光二極體封裝的固晶方法和固晶結構
本提案是關於一種發光二極體封裝，特別是一種發光二極體封裝的固晶方法和固晶結構。
由於發光二極體(Light Emitting Diode,LED)具有體積小、發光效率高、壽命長與色彩變化豐富等優點，可預期地發光二極體的應用將會越來越多。一般來說，發光二極體裸晶需經過固晶(Die Bonding)、打線、封膠及商品分類等封裝步驟，方能將晶片商品化至客戶端。
固晶製程在較低溫度的條件下，可避免LED元件損毀，並且固晶結構具有良好的導熱性，可使LED封裝在運作時能發揮較佳的散熱效果，確保LED元件的發光效率。此外，固晶接合界面亦必需有足夠的機械強度與可靠度。
習知之固晶材料可分為兩大類，第一類為高分子導電膠材，第二類則為金屬銲接材料。
習用發光二極體之固晶方法，係先使用高分子導電膠材(如導電銀膠)將發光二極體晶片黏著於導線架上，並以150℃之溫度加熱1.5小時以上，使導電銀膠熱固成型，進而將發光二極體晶片固定於導線架上。舉例來說，台灣專利公告編號第463394號「晶片式發光二極體及其製造方法」中，該專利係使用高分子導電膠材(如導電銀膠)，將晶粒與基板(導線架或印刷電路板)進行連接，並送入空氣爐內進行熱固化烘烤。
上述方式雖簡便，但若導電銀膠塗抹不均勻時，將使晶粒無法固定在應固定之位置，而影響發光效率。另外，在高溫的操作環境下，由於高分子膠質材料導熱耐熱性極差，銀膠第二層在長時間使用下將易劣化，導致發光二極體晶片無法確實與導線架接合。另外，發光二極體也將因銀膠難以導熱(銀膠熱導係數僅1W/M-K)而無法確實散熱，造成壽命減少與光電轉化效率下降等現象。
另外，發光二極體晶片亦可透過一金屬銲接材料，將發光二極體晶片固定於導線架上，使得發光二極體晶片和導線架間的連接材料的散熱性與耐熱性皆因此而有所提升。舉例來說，台灣專利公開編號第200840079號「發光二極體封裝之固晶材料與方法」中，該專利係於基板表面上塗佈一層適當範圍的共晶接著材料。後續再將發光二極體晶粒設置於基板表面上的共晶接著材料上，後續再經熱板、烤箱或空氣爐加熱而完成共晶結合。由於此共晶結合的接合層為金屬材料，散熱性與耐熱性均優於高分子導電膠。但相較於銀膠固晶，由於利用金屬焊接材料的固晶設備需外加溫控系統與加壓系統，因此其固晶設備較為複雜昂貴，且其產能亦較低。
此外，若使用高熔點的金屬銲接材料，發光二極體晶片將因接合溫過高而易受熱應力的影響，產生破壞。若改以低熔點之金屬做為銲接材料，雖然接合溫度降低，但在一般的工作環境下(約70-80℃)，由於接合層熔點較低，接合層材料將因原子的快速擴散，而有軟化或介金屬化合物(intermetallic compound)過度成長的 現象產生，導致接點可靠度將因此而大幅下降。
本提案提供一種發光二極體封裝的固晶方法和固晶結構。
本提案所揭露之固晶方法，首先在一發光二極體晶片的一基板上的一表面上形成具有透光特性的一黏著層，在黏著層上形成一第一金屬層，在一封裝基板上形成一第二金屬層，以及在第一金屬層和第二金屬層中至少一個上形成一第三金屬層。
接著，使第一金屬層、第二金屬層與至少一第三金屬層彼此堆疊，以使發光二極體晶片和封裝基板結合。最後，將相結合的發光二極體晶片和封裝基板加熱，使至少一第三金屬層擴散至第一金屬層和第二金屬層而分別形成一金屬化合層。
其中，至少一個第三金屬層的熔點低於第一金屬層和第二金屬層的熔點。
本提案所揭露之固晶結構，包括有一黏著層、一第一金屬層、一第二金屬層和複數個金屬化合層。黏著層具有透光特性且形成於一發光二極體晶片的一基板的一表面上。第一金屬層形成於黏著層上。第二金屬層形成於封裝基板上。金屬化合層則在固晶結構加熱時，分別由形成在第一金屬層和第二金屬層中至少一個上的一第三金屬層向第一金屬層和第二金屬層擴散而分別形成。第三金屬層的熔點低於第一金屬層和第二金屬層的熔點。
本提案亦揭露包含上述的固晶結構的發光二極體封裝。
在本提案之一實施例中，第一金屬層的材料為銀、鋁或包含銀或鋁的合金。
在本提案之一實施例中，第一金屬層的厚度為0.1至10微米。
在本提案之一實施例中，第二金屬層的材料為銀、銅、鎳或包含銀、銅或鎳元素的合金。
在本提案之一實施例中，第二金屬層的厚度為0.1至10微米。
在本提案之一實施例中，第三金屬層的材料為鉍、錫、銦或包含鉍、銦或錫的合金。
在本提案之一實施例中，第三金屬層的厚度範圍為1至20微米。
在本提案之一實施例中，發光二極體晶片的基板為一藍寶石基板、一矽基板或一碳化矽基板。
在本提案之一實施例中，黏著層的材料為鋁或氧化鋁。
在本提案之一實施例中，黏著層的厚度為10奈米至1微米。
在本提案之一實施例中，封裝基板的材料為銀、銅、鎳化鐵、鋁、氮化鋁，或者封裝基板為銅或銀的一引腳架。
根據上述本提案所揭露之固晶方法、固晶結構和發光二極體封裝，係藉由在發光二極體晶片的基板的一面形成具有透光透性的一黏著層，以及在黏著層上再形成具有反光特性的第一金屬層，使穿透發光二極體晶片的基板的光線能被第一金屬層反射，而達到提高發光二極體封裝的發光效率。
此外，本提案也藉著上述至少一個第三金屬層與第一金屬層及第二金屬層相堆疊的結構(第三金屬層的熔點低於第一金屬層和第二金屬層的熔點)，使固晶結構在加熱時，此第三金屬層分別與第一金屬層和第二金屬層間產生固相和液相的界面反應，形成上 述的金屬化合層。藉此，發光二極體晶片與封裝基板的接合界面可承受較高的溫度。
有關本提案的特徵、實作與功效，茲配合圖式作最佳實施例詳細說明如下。
本提案之一實施例的發光二極體封裝的固晶方法，請同時參照「第1A圖」至「第1F圖」所示，其中「第1F圖」為本提案之發光二極體封裝的結構示意圖。本提案之發光二極體封裝包含一發光二極體晶片10、一固晶結構和一封裝基板40。
首先，在發光二極體晶片10的基板11的一表面111上形成一黏著層21，以及在黏著層21上形成一第一金屬層22，如「第1A圖」和「第1B圖」所示。另一方面，在封裝基板40上形成一第二金屬層31，在第二金屬層31上形成一第三金屬層32，如「第1C圖」和「第1D圖」所示。
接著，將第一金屬層22和第三金屬層32相堆疊，使黏著層21、第一金屬層22、第三金屬層32和第二金屬層31由發光二極體晶片10往封裝基板40的方向依序堆疊，藉此將發光二極體晶片10和封裝基板40相接合，如「第1E圖」所示。
在一實施例中，將發光二極體晶片10和封裝基板40的接合方法可利用一固晶機台，將第一金屬層22和第三金屬層31接觸，在一定的接合溫度的環境下(例如110℃)，對鍍有第一金屬層22的發光二極體晶片10和鍍有第二金屬層31與第三金屬層32的封裝基板40施加一定的接合壓力(例如1000牛頓(N))，並維持一定 時間(例如5秒)，使得發光二極體晶片10和封裝基板40相接合。
最後，將相接合的發光二極體晶片10和封裝基板40一同置入高溫爐中加熱，以進行等溫凝固製程(Isothermal Solidification Process)。
當「第1E圖」的固晶結構的半成品加熱時，第三金屬層32會熔融。液化的第三金屬層32會分別向第一金屬層22和第二金屬層31擴散，使第一金屬層22與第三金屬層32間的接合界面F1以及第三金屬層32和第二金屬層31間的接合界面F2產生固相和液相的界面反應，而分別形成一金屬化合層50和一金屬化合層51。至終，第三金屬層32進行擴散的結果，第三金屬層32將會被消耗殆盡，如「第1F圖」所示。金屬化合層50的面積可等於第一金屬層22的面積。金屬化合層51的面積可等於第二金屬層31的面積。
上述的等溫凝固製程是指在發光二極體晶片10和封裝基板40的接合過程中，溫度均維持在恆溫狀態下，第三金屬層32由熔融狀態轉變為固態的介金屬化合物，亦即金屬化合物50和51。
在一實施例中，第一金屬層22和第二金屬層31的厚度取決於第三金屬層32的厚度，亦即當第三金屬層32在加熱過程中完全消耗時，殘留的第一金屬層22和第二金屬層31仍分別維持一厚度值，且殘留的第一金屬層22和殘留的第二金屬層31的厚度不一定要一致。
在另一實施例中，當第三金屬層32和第二金屬層31在加熱過程中完全消耗時，殘留的第一金屬層22仍維持一厚度值。
本提案之一實施例的發光二極體封裝的固晶方法，請同時參照「第2A圖」至「第2F圖」所示，其中「第2F圖」為本提案之發光二極體封裝的結構示意圖。本提案之發光二極體封裝包含一發光二極體晶片10、一固晶結構和一封裝基板40。
首先，在發光二極體晶片10的基板11的一表面111上形成一黏著層21，在黏著層21上形成一第一金屬層22，以及在第一金屬層22上形成一第三金屬層23，如「第1A圖」至「第1C圖」所示。另一方面，在封裝基板40上形成一第二金屬層31，如「第1D圖」所示。
接著，將第三金屬層23和第二金屬層31相堆疊，使黏著層21、第一金屬層22、第三金屬層23和第二金屬層31由發光二極體晶片10往封裝基板40的方向依序堆疊，藉此將發光二極體晶片10和封裝基板40相接合，如「第2E圖」所示。
最後，將相接合的發光二極體晶片10和封裝基板40一同置入高溫爐中加熱，以進行等溫凝固製程。
當「第2E圖」的固晶結構的半成品加熱時，第三金屬層23會熔融。液化的第三金屬層23會分別向第一金屬層22和第二金屬層31擴散，使第一金屬層22與第三金屬層23間的接合界面F4以及第三金屬層23和第二金屬層31間的接合界面F3產生固相和液相的界面反應，而分別形成一金屬化合層50和一金屬化合層51。至終，第三金屬層23進行擴散的結果，第三金屬層23將會被消耗殆盡，如「第2F圖」所示。金屬化合層50的面積可等於第一金屬層22的面積。金屬化合層51的面積可等於第二金屬層 31的面積。
在一實施例中，第一金屬層22和第二金屬層31的厚度取決於第三金屬層23的厚度，亦即當第三金屬層23在加熱過程中完全消耗時，殘留的第一金屬層22和第二金屬層31仍分別維持一厚度值，且殘留的第一金屬層22和殘留的第二金屬層31的厚度不一定要一致。
在另一實施例中，當第三金屬層23和第二金屬層31在加熱過程中完全消耗時，殘留的第一金屬層22仍維持一厚度值。
本提案之一實施例的發光二極體封裝的固晶方法，請同時參照「第3A圖」至「第3G圖」所示，其中「第3G圖」為本提案之發光二極體封裝的結構示意圖。本提案之發光二極體封裝包含一發光二極體晶片10、一固晶結構和一封裝基板40。
首先，在發光二極體晶片10的基板11的一表面111上形成一黏著層21，在黏著層21上形成一第一金屬層22，以及在第一金屬層22上形成一第三金屬層23，如「第3A圖」至「第3C圖」所示。另一方面，在封裝基板40上形成一第二金屬層31，以及在第二金屬層31上形成另一第三金屬層32，如「第3D圖」和「第3E」所示。
接著，將第三金屬層23和第三金屬層32相堆疊，使黏著層21、第一金屬層22、第三金屬層23、第三金屬層32和第二金屬層31由發光二極體晶片10往封裝基板40的方向依序堆疊，藉此將發光二極體晶片10和封裝基板40相接合，如「第3F圖」所示。
最後，將相接合的發光二極體晶片10和封裝基板40一同置 入高溫爐中加熱，以進行等溫凝固製程。
當「第3F圖」的固晶結構的半成品加熱時，第三金屬層23和32會熔融。液化的第三金屬層23和32會在接合界面F5接合，並且會向第一金屬層22和第二金屬層31擴散，使第一金屬層22與第三金屬層23間的接合界面F6以及第三金屬層32和第二金屬層31間的接合界面F7產生固相和液相的界面反應，而分別形成一金屬化合層50和一金屬化合層51。至終，第三金屬層23和32進行擴散的結果，第三金屬層23和32將會被消耗殆盡，如「第3G圖」所示。金屬化合層50的面積可等於第一金屬層22的面積。金屬化合層51的面積可等於第二金屬層31的面積。
在一實施例中，第一金屬層22和第二金屬層31的厚度取決於第三金屬層23和32的厚度，亦即當第三金屬層23和32在加熱過程中完全消耗時，殘留的第一金屬層22和第二金屬層31仍分別維持一厚度值，且殘留的第一金屬層22和殘留的第二金屬層31的厚度不一定要一致。
在另一實施例中，當第三金屬層23和32與第二金屬層31在加熱過程中完全消耗時，殘留的第一金屬層22仍維持一厚度值。
透過本提案的固晶結構，發光二極體晶片10所發出的光線不僅由其出射面112射出(如實線所標示)，而其穿越基板11的向下的光線(由虛線所標示)也可經由第一金屬層22的反射而從出射面112射出。其中第一金屬層22的反射率可達91%至96%。藉此，提高了發光二極體封裝的光出射率，即提高了發光效率。
本提案的黏著層21可透過蒸鍍或濺鍍的方式形成。黏著層21 具有透光特性，其材料可為金屬薄膜或金屬氧化物薄膜，例如鋁、氧化鋁(Al2O3)，其厚度可為10奈米(nm)至1微米(um)。黏著層21之透光特性係指其至少允許發光二極體晶片所發出之光線穿透。
本提案的第一金屬層22可透過蒸鍍、濺鍍、電鍍或沉積的方式形成。第一金屬層22具有反光特性，其材料可為銀、鋁或包含銀或鋁元素的合金，其厚度可為0.1微米至10微米。
本提案的第二金屬層31可透過蒸鍍、濺鍍、電鍍或沉積的方式形成於封裝基板40上，其材料可為銀(Ag)、銅(Cu)、鎳(Ni)或包含銀、銅或鎳元素的合金，其厚度可為0.1微米至10微米。
本提案的第三金屬層23和32的熔點低於第一金屬層22和第二金屬層31的熔點，其材料可為錫(Sn)、銦(In)或銦錫(InSn)，其厚度可為1至20微米。在一實施例中，當第三金屬層31為複合的金屬層時，每一單一材料設置的順序可視需求而設計。
本提案的金屬化合層50的材料是由第一金屬層22和第三金屬層32的材料所決定，或是由第一金屬層22和第三金屬層23的材料所決定。因此，金屬化合層50的材料可為錫銀(Ag3Sn)或銦銀(Ag2In)。金屬化合層51的材料是由第三金屬層32和第二金屬層31的材料所決定，或是由第三金屬層23和第二金屬層31的材料所決定。因此，金屬化合層51的材料為良性錫銅(Cu6Sn5)、惡性錫銅(Cu3Sn)、錫鎳(Ni3Sn4)、銦銅(Cu7In3)或銦鎳(Ni3In)。
錫銀(Ag3Sn)的熔點為480℃。銦銀(Ag2In)的熔點為305℃。良性錫銅(Cu6Sn5)的熔點為415℃。惡性錫銅(Cu3Sn)的熔點為670℃。錫鎳(Ni3Sn4)的熔點為795℃。銦銅(Cu7In3)的熔點為610℃。 銦鎳(Ni3In)的熔點為776℃。
本提案的發光二極體晶片10不限於任何一種材料、結構和製程，其所激發出的光線的波長可根據使用者的需要來設計或選用。因此，發光二極體晶片10可具有p-i-n結構，且可為氮化鎵(GaN)、氮化鎵銦(GaInN)、磷化鋁銦鎵鎵(AlInGaP)、氮化鋁銦鎵(AlInGaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵銦砷(GaInAsN)、磷氮化鎵銦(GaInPN)或其組合。
本提案的基板11為具有透光特性的一透明基板，可為一藍寶石基板、一矽(Si)基板或一碳化矽(SiC)基板。此外，此基板11還可以為一單晶材料的基板。封裝基板40可以為導線架、印刷電路板、具有塑膠反射杯的基材、或陶瓷基板。封裝基板40的材料可為銀(Ag)、銅(Cu)、鐵鎳鈷(Kovar)合金、鎳化鐵(FeNi)、鋁(Al)、氮化鋁(AlN)、矽(Si)或低溫共燒多層陶瓷(Low-Temperature cofired Ceramics,LTCC)等。
在一實施例中，黏著層的材料為氧化鋁，第一金屬層的材料為銀，第二金屬層的材料為錫，且黏著層的厚度為50nm，第一金屬層的厚度為6-10um，第二金屬層的厚度為4um。在此實施例中，黏著層的反射率可達91%。
在一實施例中，黏著層的材料為鋁，第一金屬層的材料為銀，第二金屬層的材料為錫，且黏著層的厚度為1um，第一金屬層的厚度為6-10um，第二金屬層的厚度為4um。在此實施例中，黏著層的反射率可達96%。
根據上述本提案所揭露之固晶方法、固晶結構和發光二極體 封裝，係藉由在發光二極體晶片的基板的一面形成具有透光透性的一黏著層，以及在黏著層上再形成具有反光特性的第一金屬層，使穿透發光二極體晶片的基板的光線能被第一金屬層反射，而達到提高發光二極體封裝的發光效率。
此外，本提案也藉著上述至少一個第三金屬層與第一金屬層及第二金屬層相堆疊的結構(第三金屬層的熔點低於第一金屬層和第二金屬層的熔點)，使固晶結構在加熱時，此第三金屬層分別與第一金屬層和第二金屬層間產生固相和液相的界面反應，形成上述的金屬化合層。藉此，第一堆疊結構和第二堆疊結構的接合界面可承受較高的溫度，達到低溫接合，高溫使用的目的。
雖然本提案以前述之較佳實施例揭露如上，然其並非用以限定本提案，任何熟習相像技藝者，在不脫離本提案之精神和範圍內，當可作些許之更動與潤飾，因此本提案之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。
10‧‧‧發光二極體晶片
11‧‧‧基板
111‧‧‧表面
112‧‧‧出光面
21‧‧‧黏著層
22‧‧‧第一金屬層
23、32‧‧‧第三金屬層
31‧‧‧第二金屬層
40‧‧‧封裝基板
50、51‧‧‧金屬化合層
F1-F7‧‧‧接合界面
第1A圖至第1F圖為根據本提案之一實施例的固晶方法的示意圖。
第2A圖至第2F圖為根據本提案之一實施例的固晶方法的示意圖。
第3A圖至第3G圖為根據本提案之一實施例的固晶方法的示意圖。
10‧‧‧發光二極體晶片
11‧‧‧基板
111‧‧‧表面
112‧‧‧出光面
21‧‧‧黏著層
22‧‧‧第一金屬層
31‧‧‧第二金屬層
40‧‧‧封裝基板
50、51‧‧‧金屬化合層

Claims (25)

  1. 一種固晶方法，包括有：形成具有透光特性的一黏著層於一發光二極體晶片的一基板的一表面上；形成一第一金屬層於該黏著層上；形成一第二金屬層於該封裝基板上；形成一第三金屬層於該第一金屬層和該第二金屬層中至少一個上，其中該至少一個第三金屬層的熔點低於該第一金屬層和該第二金屬層的熔點；使該第一金屬層、該第二金屬層與該至少一第三金屬層彼此堆疊，以使該發光二極體晶片和該封裝基板結合；以及將相結合的該發光二極體晶片和該封裝基板進行加熱，使該至少一第三金屬層擴散至該第一金屬層和該第二金屬層而分別形成一金屬化合層。
  2. 如請求項第1項所述之固晶方法，其中該第一金屬層的材料為銀、鋁或包含銀或鋁元素的合金。
  3. 如請求項第1項所述之固晶方法，其中該第二金屬層的材料為銀、銅、鎳或包含銀、銅或鎳元素的合金。
  4. 如請求項第1項所述之固晶方法，其中該至少一第三金屬層的材料為鉍或銦或錫或包含鉍、銦、錫元素的合金。
  5. 如請求項第1項所述之固晶方法，其中該發光二極體晶片的該基板為一藍寶石基板、一矽基板或一碳化矽基板。
  6. 如請求項第1項所述之固晶方法，其中該黏著層為金屬薄膜或 金屬氧化物薄膜。
  7. 如請求項第1項所述之固晶方法，其中該黏著層的材料為鋁、氧化鋁。
  8. 如請求項第1項所述之固晶方法，其中該黏著層的厚度為10奈米至1微米。
  9. 如請求項第1項所述之固晶方法，其中該第一金屬層的厚度為0.1至10微米。
  10. 如請求項第1項所述之固晶方法，其中該第二金屬層的厚度為0.1至10微米。
  11. 如請求項第1項所述之固晶方法，其中該第三金屬層的厚度為1至20微米。
  12. 如請求項第1項所述之固晶方法，其中該封裝基板的材料為銀、銅、鎳化鐵、鋁、氮化鋁，或者該封裝基板為銅或銀的一引腳架。
  13. 一種固晶結構，包括有：一黏著層，具有透光特性且形成於一發光二極體晶片的一基板的一表面上；一第一金屬層，形成於該黏著層上；一第二金屬層，形成於一封裝基板上；以及複數個金屬化合層，形成於該第一金屬層和該第二金屬層之間；其中，該些金屬化合層是在該固晶結構加熱時，由形成於該第一金屬層和該第二金屬層中至少一個上的一第三金屬層 擴散至該第一金屬層和該第二金屬層而分別形成，該至少一個第三金屬層的熔點低於該第一金屬層和該第二金屬層的熔點。
  14. 如請求項第13項所述之固晶結構，其中該第一金屬層的材料為銀、鋁或包含銀或鋁元素的合金。
  15. 如請求項第13項所述之固晶結構，其中該第二金屬層的材料為銀、銅、鎳或包含銀、銅或鎳元素的合金。
  16. 如請求項第13項所述之固晶結構，其中該至少一第三金屬層的材料為鉍、銦、錫或包含鉍、銦或錫元素的合金。
  17. 如請求項第13項所述之固晶結構，其中該發光二極體晶片的該基板為一藍寶石基板、一矽基板或一碳化矽基板。
  18. 如請求項第13項所述之固晶方法，其中該黏著層為金屬薄膜或金屬氧化物薄膜。
  19. 如請求項第13項所述之固晶結構，其中該黏著層的材料為鋁或氧化鋁。
  20. 如請求項第13項所述之固晶結構，其中該黏著層的厚度為10奈米至1微米。
  21. 如請求項第13項所述之固晶方法，其中該第一金屬層的厚度為0.1至10微米。
  22. 如請求項第13項所述之固晶結構，其中該第二金屬層的厚度為0.1至10微米。
  23. 如請求項第13項所述之固晶結構，其中該第三金屬層的厚度為1至20微米。
  24. 如請求項第13項所述之固晶結構，其中該封裝基板的材料為 銀、銅、鎳化鐵、鋁、氮化鋁，或者該封裝基板為銅或銀的一引腳架。
  25. 一種發光二極體封裝，包含如申請專利範圍第13項之該發光二極體晶片、該封裝基板和該固晶結構，該發光二極體晶片透過該固晶結構與該封裝基板結合。
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