CN108389949A - Led封装方法 - Google Patents
Led封装方法 Download PDFInfo
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- CN108389949A CN108389949A CN201810139750.5A CN201810139750A CN108389949A CN 108389949 A CN108389949 A CN 108389949A CN 201810139750 A CN201810139750 A CN 201810139750A CN 108389949 A CN108389949 A CN 108389949A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052737 gold Inorganic materials 0.000 claims abstract description 25
- 239000010931 gold Substances 0.000 claims abstract description 25
- 229910001020 Au alloy Inorganic materials 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000003353 gold alloy Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 235000003392 Curcuma domestica Nutrition 0.000 claims abstract description 3
- 244000008991 Curcuma longa Species 0.000 claims abstract description 3
- 235000003373 curcuma longa Nutrition 0.000 claims abstract description 3
- 235000013976 turmeric Nutrition 0.000 claims abstract description 3
- 239000004568 cement Substances 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000003723 Smelting Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000004927 fusion Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
本发明公开了一种LED封装方法,包括:在LED芯片下表面涂覆锡金合金层;在铜片的上端面沉金,使得铜片的上端面形成金层;将若干铜片放入高温炉内;将下表面涂覆有锡金合金层的LED芯片压合在铜片上端面使得锡金合金层与金层熔合。它的优点是锡金合金层与金层之间导热性好,散热效果好,可适用于大功率的LED封装,锡金合金层与金层之间固定牢固。
Description
技术领域
本发明涉及LED封装技术领域,尤其是一种LED封装方法。
背景技术
用银浆将led芯片焊接在基板上,这种焊接存在的缺点:led芯片与基板间导热性不好,led芯片与基板不够牢固,led芯片容易从基板上脱离。
发明内容
本发明的目的是解决现有技术的不足,提供一种LED封装方法。
本发明的一种技术方案:
一种LED封装方法,包括:在LED芯片下表面涂覆锡金合金层;在铜片的上端面沉金,使得铜片的上端面形成金层;将若干铜片放入高温炉内;将下表面涂覆有锡金合金层的LED芯片压合在铜片上端面使得锡金合金层与金层熔合。
一种优选方案是在铜片的左侧面或右侧面固定绝缘胶,将相邻铜片通过绝缘胶绝缘固定。
一种优选方案是锡金合金层与金层熔合在一起的温度为300~320度。
一种优选方案是所述锡金合金层与金层熔合在一起的温度为310度。
综合上述技术方案,本发明的有益效果:锡金合金层与金层之间导热性好,散热效果好,可适用于大功率的LED封装,锡金合金层与金层之间固定牢固。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。
附图说明
图1是本发明的流程图;
图2是本发明中LED芯片和铜片的熔合之前立体图;
图3是本发明中LED芯片和铜片的熔合之后立体图;
图4是本发明中若干铜片的熔合时立体图。
具体实施方式
如图1至图4所示,一种LED封装方法,包括:
S1,在LED芯片20下表面涂覆锡金合金层21;
S2,在铜片10的上端面沉金,使得铜片10的上端面形成金层11;
S3,将若干铜片10放入高温炉内;
S4,将下表面涂覆有锡金层11的LED芯片20压合在铜片10上端面使得锡金合金层21与金层11熔合。
具体的,高温炉为分段加热的熔炉带,熔炉带的温度从一端到另外一端依次增加,温度增加的梯度可以是10度,20度或者30度,将上端面设有金层11的铜片10放置在熔炉带上,铜片10随熔炉带一起移动,铜片10的温度不断升高;将下表面涂覆有锡金合金层21的LED芯片20压合在铜片10上端面,使得铜片10上端面的金层11和LED芯片20下表面的锡金合金层21熔合在一起。
优选的,在铜片10的左侧面或右侧面固定绝缘胶30,将相邻铜片10通过绝缘胶30绝缘固定。具体的,将熔化的绝缘胶30固定在铜片10的左侧面或右侧面,将相邻铜片10压合,使得铜片10一侧面的绝缘胶30与相邻铜片10粘接固定。
优选的,锡金合金层21与金层11熔合在一起的温度为300~320度,即将上端面设有金层11的铜片10放置在熔炉带上,加热温度至300~320度,将下表面涂覆有锡金合金层21的LED芯片20压合在铜片10上端面,使得铜片10上端面的金层11和LED芯片20下表面的锡金合金层21熔合在一起。当高温炉的温度加热至300~320度时,锡金合金层21处于熔化状态,此时锡金合金层21与铜片10上端面的金层11熔合在一起。
优选的,锡金合金层21与金层11熔合在一起的温度为310度。
以上是本发明的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (4)
1.一种LED封装方法,其特征在于,包括:
在LED芯片下表面涂覆锡金合金层;
在铜片的上端面沉金,使得铜片的上端面形成金层;
将若干铜片放入高温炉内;
将下表面涂覆有锡金合金层的LED芯片压合在铜片上端面使得锡金合金层与金层熔合。
2.根据权利要求1所述的LED封装方法,其特征在于,在铜片的左侧面或右侧面固定绝缘胶,相邻铜片通过绝缘胶绝缘固定。
3.根据权利要求1所述的LED封装方法,其特征在于,所述锡金合金层与金层熔合在一起的温度为300~320度。
4.根据权利要求3所述的LED封装方法,其特征在于,所述锡金合金层与金层熔合在一起的温度为310度。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1838395A (zh) * | 2005-03-24 | 2006-09-27 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101075648A (zh) * | 2006-05-17 | 2007-11-21 | 百鸣科技有限公司 | 发光二极管散热封装成型方法 |
CN103822143A (zh) * | 2014-02-18 | 2014-05-28 | 江苏新广联绿色照明工程有限公司 | 硅基led路灯光源模块 |
CN103887404A (zh) * | 2012-12-21 | 2014-06-25 | 财团法人工业技术研究院 | 发光二极管封装的固晶方法和固晶结构 |
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2018
- 2018-02-11 CN CN201810139750.5A patent/CN108389949A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1838395A (zh) * | 2005-03-24 | 2006-09-27 | 株式会社东芝 | 半导体器件及其制造方法 |
CN101075648A (zh) * | 2006-05-17 | 2007-11-21 | 百鸣科技有限公司 | 发光二极管散热封装成型方法 |
CN103887404A (zh) * | 2012-12-21 | 2014-06-25 | 财团法人工业技术研究院 | 发光二极管封装的固晶方法和固晶结构 |
CN103822143A (zh) * | 2014-02-18 | 2014-05-28 | 江苏新广联绿色照明工程有限公司 | 硅基led路灯光源模块 |
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Application publication date: 20180810 |