CN107924828B - 电子器件和用于制造电子器件的方法 - Google Patents
电子器件和用于制造电子器件的方法 Download PDFInfo
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- CN107924828B CN107924828B CN201680049235.7A CN201680049235A CN107924828B CN 107924828 B CN107924828 B CN 107924828B CN 201680049235 A CN201680049235 A CN 201680049235A CN 107924828 B CN107924828 B CN 107924828B
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Abstract
本发明涉及一种器件(100),所述器件具有第一部件(1)、第二部件(2)、连接元件(3),所述连接元件设置在第一部件(1)和第二部件(2)之间,其中连接元件(3)具有至少一个第一相(31)和第二相(32),其中第一相(31)包括具有浓度(c11)的第一金属(Me1)、具有浓度(c12)的第二金属(Me2)和具有浓度(c13)的第三金属(Me3),其中第二相(32)包括具有浓度(c25)的第一金属(Me1)、第二金属(Me2)和第三金属(Me3),其中第一金属(Me1)、第二金属(Me2)和第三金属(Me3)彼此不同,并且适合于在小于200℃的处理温度下反应,其中适用的是c11≥c25,并且c11≥c13≥c12。
Description
技术领域
本发明涉及一种电子器件。此外,本发明涉及一种用于制造电子器件的方法。
背景技术
尤其当两个部件具有明显不同的膨胀系数时,至少两个部件的连接或接合是一种挑战。具有强烈不同的膨胀系数的部件在复合结构中产生强的翘曲,尤其在使用较高的温度时如此,这会引起制造时的问题,引起部件的折断和功能的丧失。为了解决所述问题,迄今为止通常遵循两种方式。一方面使用具有相似的热膨胀表现的两个部件,例如基底,以便在制造期间,两个部件或基底在高的定型温度下仅轻微地弯曲。另一方面尝试,通过使用低熔点的金属、例如铟,和其在温和温度下的等温凝固反应来降低定型温度。当然,在多种实际情况下翘曲的减少通常不够。因此,这也能够引起部件的折断或功能的丧失。
发明内容
本发明的目的是,提供一种器件,所述器件可稳定地和/或容易地制造。此外,本发明的目的是,提供一种用于制造器件的方法,所述方法可容易地和/或低成本地执行。
所述目的通过根据本发明的电子器件来实现。此外,所述目的通过根据本发明的用于制造电子器件的方法来实现。
在至少一个实施方式中,器件具有第一部件、第二部件和连接元件。连接元件设置在第一部件和第二部件之间。连接元件具有至少一个第一相和第二相。第一相具有浓度为c11的第一金属、浓度为c12的第二金属和浓度为c13的第三金属,或由其构成。第二相具有浓度为c25的第一金属、第二金属和第三金属,或者由其构成。第一金属、第二金属和第三金属彼此不同,并且适合于在<200℃的处理温度下混合和/或反应。在此适用的是:c11≥c25并且c11≥c13≥c12。尤其适用的是:c11≥c25并且c11≥c13>c12。“反应”尤其表示,金属化学反应。
根据至少一个实施方式,器件具有第一部件和/或第二部件。第一部件和/或第二部件能够选自不同数量的材料和元素。第一和/或第二部件例如能够分别选自:蓝宝石、氮化硅、半导体材料、陶瓷材料、金属和玻璃。
例如,两个部件中的一个能够是半导体晶片或陶瓷晶片,例如由蓝宝石、硅、锗、氮化硅、氧化铝、发光陶瓷例如YAG成形的材料。此外可行的是,至少一个部件成型为印刷电路板(PCB)、金属导体框或其他类型的连接载体。此外,部件中的至少一个例如能够包括电子芯片、光电子芯片、发射光的发光二极管、激光器芯片、光敏探测器芯片或晶片或具有多个这种芯片。尤其,第二部件和/或第一部件包括发射光的发光二极管,简称LED。尤其,第二部件包括发射光的发光二极管,并且第一部件包括至少一种在上文中提到的材料。
包括发射光的发光二极管的部件优选设计成用于,发射蓝光或白光。替选地,部件也能够发射其他颜色,例如红色、橙色或出自红外范围的辐射。
发射光的发光二极管包括至少一个光电子半导体芯片。光电子半导体芯片能够具有半导体层序列。半导体芯片的半导体层序列优选基于III-V族化合物半导体材料。例如使用由下述元素构成的化合物,所述元素能够选自铟、镓、铝、氮、磷、砷、氧、硅、碳和其组合。但是也能够使用其他元素和添加物。具有有源区域的半导体层序列例如能够基于氮化物化合物半导体材料。“基于氮化物化合物半导体材料”在本文中表示,半导体层序列或其至少一部分具有氮化物化合物半导体材料,优选AlnGamIn1-n-mN,或者由其构成,其中0≤n≤1,0≤m≤1,并且n+m≤1。在此,所述材料不必强制性地具有根据上式的数学上精确的组成。更确切地说,所述材料例如能够具有一种或多种掺杂物以及附加的组成成分。然而出于简单性,上式仅包含晶格的主要组成成分(Al、Ga、In、N),即使所述主要组成成分部分地通过少量其他物质替代和/或补充也如此。
半导体层序列包含有源层,所述有源层具有至少一个pn结和/或一个或多个量子系统结构。在LED或半导体芯片运行时,在有源层中产生电磁辐射。辐射的波长或波长最大值优选位于紫外和/或可见和/或红外光谱范围中,尤其位于420nm和800nm之间、例如位于440nm和480nm之间的波长处,其中包括边界值。
根据至少一个实施方式,第一部件与第二部件在组成方面不同。例如,第一和第二部件具有不同的热膨胀系数。换言之,器件具有两个部件,所述部件至少在其热膨胀系数方面彼此不同。
根据至少一个实施方式,第一部件具有第一热膨胀系数α1。第二部件具有第二热膨胀系数α2。尤其,第一热膨胀系数α1与第二热膨胀系数α2不同。尤其,两个热膨胀系数至少相差3、2、1或1.5倍。替选地,能够是α1=α2。
根据至少一个实施方式,器件具有连接元件。连接元件设置在第一部件和第二部件之间。换言之,连接元件将第一和第二部件彼此连接。例如,连接元件能够是第一部件和第二部件的机械连接装置。此外,第一部件与第二部件的电连接也能够经由连接元件进行。尤其,连接元件与第一部件和第二部件直接机械地和/或电接触地设置。
根据至少一个实施方式,连接元件是连接层或具有多个连接层。
连接元件包括至少两相,即第一相和第二相。尤其,连接元件由第一相和第二相构成。但是,连接元件也能够具有多于两相,例如三相、四相或五相。连接元件也能够具有多个第一相和/或多个第二相。尤其,多个第一相彼此空间分离。例如,两个第一相能够通过第二相在空间上彼此分离。至少第一相和/或至少第二相至少在其组成方面不同。如果连接元件由三相构成,那么能够存在两个相同的第一相和第二相。
各个相也能够形成子相。尤其,子相不构成一致的层。尤其,每个相由不同的晶粒构成,所述晶粒的组成处于给出的范围中。当然,组成能够在晶粒之间不同。因此,子相在第一和/或第二相之内构成,所述第一和/或第二相不具有层厚度均匀的层。
借助“相”在此表示连接元件的下述区域,在所述区域中存在类似的或相同的物理特性,例如熔点。
根据至少一个实施方式,连接元件的各个相具有不同类型的金属。尤其,相应的相之内的金属彼此不同。例如,连接元件在第一相中具有至少三种或四种不同的金属,即浓度为c11的第一金属Me1、浓度为c12的第二金属Me2、浓度为c13的第三金属Me3和可能的浓度为c14的第四金属Me4。尤其,第一相由这些在上文中提到的金属构成。第二相同样能够具有不同类型的金属或由其构成。例如,第二相能够包括与在第一相中包含的相同的第一金属Me1、与在第一相中包含的相同的第二金属Me2和与在第一相中包含的第三金属Me3或者由其构成。替选地或附加地,也还能够存在其他金属,例如在第二相中的第四金属Me4。尤其,第一相的第一金属Me1与第二相的第一金属Me1通过其在相应的相之内的浓度来区分。因此,尤其第一相中的第一金属的浓度大于或等于第二相中的第一金属的浓度(c11≥c25)。尤其,在相内的金属的浓度也不同,例如第一相中的第一金属的浓度大于或等于第一相中的第三金属的浓度(c11≥c13)并且大于第一相中的第二金属的浓度(c11>c12)。第一相中的第三金属的浓度大于第一相中的第二金属的浓度,即适用的是:c13>c12。
根据至少一个实施方式,第一和/或第二相是三元体系。换言之,第一和/或第二相由三种金属构成,即第一金属、第二金属和第三金属。尤其,第一和/或第二相具有低熔点的金属。
根据至少一个实施方式,第一和/或第二相分别由第一金属、第二金属、第三金属和第四金属构成。尤其,金属在相应的相中具有不同的浓度,使得第一和/或第二相具有不同的组成。
尤其,相应的金属在相应的相中形成合金。
根据至少一个实施方式,第一金属、第二金属和第三金属适合于,在<200℃、尤其小于180℃的处理温度下混合或反应。这例如能够通过如下方式进行:第二金属和第三金属在<200℃或<120℃的处理温度下转变成液态的聚集态并且与固态的第一金属反应。由此产生第一相和/或第二相,所述第一相和第二相具有相应的金属的不同的浓度组成。
根据至少一个实施方式,第一相中的第二金属具有浓度c12,并且第一相中的第三金属具有浓度c13。尤其,第二相中的第二金属具有浓度c26并且第二相中的第三金属具有浓度c27。适用的是,c11>c25并且c11>c13>c12,并且c12<c26或者c11>c25并且c11>c13>c12并且c25=c27>c26。尤其适用的是:c11>c25并且c11>c13>c12,并且c12<c26或者c11>c25并且c11>c13>c12并且c25≈c27>c26。≈在此表示,数值相差最多10%、尤其相差最多2%或5%。
根据至少一个实施方式,第一金属选自:镍、铂和钯。优选地,第一金属是镍,因为镍能够较低成本地提供。
根据至少一个实施方式,第二金属是铟。
根据至少一个实施方式,第三金属是锡。
根据至少一个实施方式,第一相中的第一金属的浓度c11在40原子%和65原子%之间,尤其在45原子%和60原子%之间,例如为50原子%,其中包括边界值。替选地或附加地,第二相中的第一金属的浓度c25在20原子%和40原子%之间,尤其在25原子%和35原子%之间,例如为30原子%,其中包括边界值。
根据至少一个实施方式,第一相中的第二金属的浓度c12在5原子%和25原子%之间,尤其在8原子%和20原子%之间,例如为15原子%,其中包括边界值。替选地或附加地,第二相中的第二金属的浓度c26在20原子%和40原子%之间,尤其在20原子%和35原子%之间,例如为30原子%,其中包括边界值。
根据至少一个实施方式,第一相中的第三金属的浓度c13在15原子%和40原子%之间,尤其在20原子%和40原子%之间,例如为30原子%,其中包括边界值。替选地或附加地,第二相中的第三金属的浓度c27在30原子%和50原子%之间,尤其在30原子%和45原子%之间,例如为35原子%,其中包括边界值。
浓度借助于EDX(英语为energy dispersive X-ray spectroscopy,能量色散X射线光谱仪)确定,所述浓度能够具有最大5%、尤其最大2%的公差。
尤其,第一相中的第一金属的浓度能够与第一相中的第二金属的浓度和与第一相中的第三金属的浓度任意彼此组合。尤其,第二相中的第一金属的浓度能够与第二相中的第二金属的浓度和第二相中的第三金属的浓度任意彼此组合。
根据至少一个实施方式,第一金属具有>1400℃的熔点。第二金属具有小于180℃的熔点。第三金属具有<250℃的熔点。例如,能够将具有1455℃的熔化温度的镍、具有1768℃的熔化温度的铂和/或具有1555℃的熔化温度的钯用作为第一金属。例如,能够将具有156℃的熔化温度的铟用作为第二金属。例如,能够将具有231℃的熔化温度的锡用作为第三金属。
替选地或附加地,第二和第三金属能够形成熔点小于或等于120℃、尤其≤118℃的共晶混合物。尤其,第二和第三金属形成熔化温度在115℃和118℃之间的共晶混合物。如果例如作为第二和第三金属选择铟和锡,那么份额为52原子%的铟和份额为48原子%的锡具有熔化温度为117.5+/-0.5℃的共晶体。具有低熔点的第二金属与第三金属的组合示出下述优点,连接元件在低的处理温度下产生,进而可在低的处理温度下产生具有不同大的热膨胀系数的至少两个部件的复合结构。
根据至少一个实施方式,第一和/或第二相具有其他金属,尤其第四金属Me4。在第一相中第四金属具有浓度c14。替选地或附加地,在第二相中第四金属具有浓度c28。第四金属尤其具有小于1200℃的熔点。在第一相和/或第二相中的第四金属的浓度优选是全部金属的最小浓度,尤其小于第一、第二和第三金属的浓度。
根据至少一个实施方式,第四金属是金。尤其,金具有1064℃的熔点。
根据至少一个实施方式,第一相和/或第二相中的第四金属的浓度最大为5原子%。尤其,第一相和/或第二相也能够不具有贵金属,尤其金。因此,第一相和/或第二相中的第四金属的浓度在0原子%和5原子%之间。金尤其也能够嵌入到第一相和/或第二相的原子晶格中。第一和/或第二和/或第三金属的起始层上的金防止所述金属层的氧化。尤其,第四金属、例如金的浓度应不大于5原子%,以便防止形成不期望的相,例如AuIn2相。
根据至少一个实施方式,第一相和/或第二相分别成型为层。层尤其能够具有30nm至10000nm、例如100nm至2000nm的层厚度。成型为层的第一和/或第二相尤其彼此直接接触地、即尤其直接机械和/或电接触地设置。尤其,第一和第二相的层在器件的侧视图中相互堆叠,使得第一部件的第一相和第二部件的第二相相向。替选地或附加地,第一相和第二相的各个层相互堆叠,使得第二部件的第一相和第一部件的第二相相向。尤其,那么第一相与第二部件彼此直接机械地或电接触地设置,并且第二相与第一部件彼此直接机械地和/或电接触地设置。
根据至少一个实施方式,第一相层和/或第二相层的表面波浪状地成型。尤其,第一相层和第二相层的彼此邻接的表面波浪状地成型。换言之,各个相层的表面不是平坦的,而是相层由于其波浪状的成型彼此咬合。波浪状的设计方案尤其能够通过不同大小的晶粒产生。
发明人已经认识到,通过使用连接元件的根据本发明的第一相和/或第二相,能够在温和的温度下能够实现具有强烈不同的膨胀系数的第一和第二部件的连接,例如晶片的键合,使得所述部件在连接、例如键合之后具有小的翘曲。此外,根据本发明的连接元件示出热机械稳定性,使得器件也出色地适合于后续工艺和器件的运行。
如果例如具有不同的热膨胀系数的两个部件在提高的温度下平坦地彼此固定并且随后冷却,那么由于两个部件、例如晶片的不同的收缩而产生器件的弯曲。所述效应与双金属条类似。所产生的所述机械应力由于第一和第二部件的不同大的热膨胀系数而引起。这此外有助于剩余的器件的内部应力。器件的翘曲(英语:bow)能够负面地影响制造和器件使用寿命。例如,器件中的部件也能够丧失其功能或在制造期间折断。因此,出现高的产量损失。
通过根据本发明的连接元件,通过大程度降低处理温度能够实现使用低成本的部件,例如具有小的热膨胀系数的基底,而不会出现部件的过高的翘曲。因此,例如由具有低的热膨胀系数的硅、石英玻璃或氮化硅(Si:2.6·10-6K-1,石英玻璃:0.54·10-6K-1,Si3N4:1.2·10-6K-1)构成的部件能够与由蓝宝石(6.1·10-6K-1,)或GaAs构成的具有高的热膨胀系数的部件在器件中彼此连接,而不会出现明显的翘曲。通过使用根据本发明的连接元件避免或减少部件折断的出现。此外,通过使用镍,能够在器件中完全地放弃使用贵金属,例如金。这引起成本节约。
根据本发明在此尤其提出三元的低熔点的金属体系作为第一和第二相,所述金属体系能够在低温下将部件彼此连接或定型。在另一温度步骤中,能够实现连接元件的彻底的完全反应(Abreaktion),进而形成热机械稳定的连接元件。
尤其能够使用第二和第三金属、例如金属铟和锡的共晶体,以便降低混合物的熔点进而降低处理温度。借此,器件能够在低温下产生。在将两个部件连接期间,尤其由第二和第三金属构成的熔化物与三元体系的第一金属、尤其镍、钯或铂反应成三元的金属间层,这已经固定处理温度。在另一温度步骤中,第一和/或第二相能够完全反应。在此,由三元相构成的具有第一金属的层能够通过固体扩散机制积聚。换言之,在此防止连接元件的重新再次熔化并且产生温度稳定的且机械稳定的连接元件。连接元件在制造之后示出由至少一个第一相和至少一个第二相构成的组成,所述第一相和第二相具有不同浓度的各个金属。与低熔点的第二和第三金属、例如铟和锡的熔点相比,相具有提高的再熔点。
此外,提出一种用于制造器件的方法。用于制造器件的方法优选制造所述器件。这就是说,全部针对方法公开的特征也针对器件公开并且反之亦然。
根据至少一个实施方式,方法具有下述步骤:
A)提供第一部件和/或第二部件,
B)将由第一金属Me1构成的层、由第二金属Me2构成的层和由第三金属Me3构成的层施加到第一和/或第二部件上。尤其,由第一金属构成的层具有10nm至3000nm的层厚度。由第二金属构成的层具有10nm至3000nm的层厚度。第三金属的层具有10nm至4000nm的层厚度。
C)将在步骤B)下产生的布置结构加热到第一温度,例如最大200℃或180℃,以构成连接元件。连接元件具有第一相和第二相。第一相和第二相分别至少包括第一金属、第二金属和第三金属或由其构成。尤其,在第一或第二相中第一金属、第二金属和/或第三金属具有不同的浓度,使得第一相和第二相具有不同的组成。
D)将在步骤C)下产生的布置结构加热到第二温度,例如加热到在200℃和400℃之间的第二温度上,以构成热力学和机械稳定的第一和第二相,其中至少在步骤D)之前将第一和第二部件彼此连接,其中第一相至少在步骤D)之后包括浓度为c11的第一金属Me1、浓度为c12的第二金属和浓度为c13的第三金属Me3,并且第二相包括浓度为c25的第一金属Me1、浓度为c26的第二金属Me2和浓度为c27的第三金属Me3,或者由其构成。适用的是:c11≥c25并且从c11≥c13>c12,尤其c11>c25并且c11>c13>c12。尤其,将部件彼此相叠,使得施加的层直接彼此叠置。
优选地,步骤A)至D)不直接彼此紧随。在步骤A)至D)之间,其他的工艺步骤是可行的。
借助“热力学和机械稳定”在此和在下文中理解成,第一金属与第二金属和第三金属混合成,使得第一和/或第二相不继续积聚第一金属并且第一和/或第二相具有固态的聚集态。尤其,那么在步骤D)之后,第一和/或第二相具有如下熔化温度,所述熔化温度与在步骤D)之前的第一和/或第二相的熔化温度、例如在步骤C)中的第一和第二相中的熔化温度彼此不同。尤其,在步骤D)之后的第一和/或第二相的再熔温度大于在步骤D)之前、例如在步骤C)中的第一和/或第二相的再熔温度。
根据至少一个实施方式,连接元件至少在步骤C)中构成与第一部件和第二部件的牢固的连接。
根据至少一个实施方式,在步骤C)和D)之间进行其他步骤C1):
C1)将在步骤C)下产生的布置结构冷却到室温。借助室温在此尤其理解成25℃的温度。
根据至少一个实施方式,第一和/或第二相具有如下组成,该组成使得第一和/或第二部件的翘曲最小化。
根据方法的至少一个实施方式,将第一和/或第二部件加热直至第一温度,例如直至最大200℃或最大180℃的第一温度。在此,第一金属和第二金属和第三金属形成三元的第一和/或第二相。尤其,第二和第三金属由于其适合于形成共晶体而熔化并且与第一金属反应成三元的第一和/或第二相。三元的第一或第二相包括第一、第二和第三金属或由其构成。三元相能够是多相的金属间层。在器件中,那么所述三元相将第一和第二部件彼此连接。尤其,部件具有不同程度的热膨胀系数。
该方法能够实现第一部件与第二部件通过连接元件连接,其中两个部件尤其具有不同的热膨胀系数。这允许将更便宜的材料用于第一和/或第二部件以形成器件。借此,例如能够将可良好导热和导电且节约成本的材料、例如硅晶片用于接合到蓝宝石晶片上。
附图说明
其他的优点、有利的实施方式和改进方案从在下文中结合附图描述的实施例中得出。
附图示出:
图1A示出根据一个实施方式的器件的示意侧视图,
图1B示出图1A的细节图,
图2A至5B分别示出根据一个实施方式的器件的示意侧视图,
图6A至6C、7A至7C、8A至8B和9A至9B分别示出根据一个实施方式的用于制造器件的方法。
具体实施方式
在实施例和附图中,相同的、同类的或起相同作用的元件分别设有相同的附图标记。所示出的元件和其相互间的大小关系不应视作为是符合比例的。更确切地说,各个元件、例如层、组件、器件和区域为了更好的可视性和/或为了更好的理解夸大地示出。
图1示出根据一个实施方式的器件100的示意侧视图。器件100具有第一部件1和第二部件2。在第一部件1和第二部件2之间设置有连接元件3。第一部件1和第二部件2例如选自:蓝宝石、陶瓷材料、半导体材料和金属。在此,第一部件1和第二部件2选择成,使得所述第一部件和第二部件具有不同程度的热膨胀系数。尤其,热膨胀系数至少相差1.倍5,例如3倍或更高。
连接元件3设置在第一部件1和第二部件2之间。连接元件3与第一部件1和第二部件2直接接触。连接元件3具有第一相31和第二相32。
例如,第一相31包括下述浓度的下述材料或者由其构成:
第一金属Me1:45原子%至60原子%,
第二金属Me2:8原子%至20原子%,
第三金属Me3:20原子%至40原子%,
第四金属Me4:0原子%至5原子%。
第二相32于是能够由下述金属和其浓度构成或包括所述金属和其浓度:
第一金属Me1:25原子%至35原子%,
第二金属Me2:20原子%至35原子%,
第三金属Me3:30原子%至45原子%,
第四金属Me4:0原子%至5原子%
换言之,连接元件3具有两个相31、32,其中每个相31、32包括至少三种金属Me1、Me2、Me3或者由其构成。在此,第一相中的第一金属Me1的浓度c11大于第二相中的第一金属Me1的浓度c25,并且第一相中的第一金属Me1的浓度c11大于第一相中的第三金属Me3的浓度c13,并且大于第一相中的第二金属Me2的浓度c12。例如,作为第一金属Me1能够使用镍、铂和/或钯。作为第二金属Me2例如能够使用铟。作为第三金属Me3例如能够使用锡并且可能的作为第四金属Me4能够使用金。尤其,第四金属Me4具有相应的相31、32中的全部金属的最低浓度。
根据至少一个实施方式,第一相31和/或第二相32分别成型为层。尤其,第一相和/或第二相31、32上下堆叠。在第一相和/或第二相31、32的相邻的层之间的边界面能够是平坦的。替选地,如在图1B中示出的那样,在第一相31和第二相32之间的边界面312能够不是平坦的,而是具有波浪形的形状。由此,第一相31能够与第二相32咬合。这能够通过各个层中的晶粒的单独的生长引起。
图2A和2B分别示出根据一个实施方式的器件100以及其制造。图2A的器件示出器件100,如其在温度的影响之前、即在方法步骤C)和D)之前能够构造的那样。图2B示出在至少方法步骤C)和/或D)之后完成的器件100。
图2A示出第一部件1,所述第一部件由层序列构成。第一部件1具有基底54,所述基底例如能够是发射光的发光二极管的蓝宝石基底。在蓝宝石基底上或下能够施加有半导体层序列5。半导体层序列5包括n型半导体层51、有源层52和p型半导体层53。有源层52在运行中设计成用于,发射尤其出自可见波长范围的辐射。半导体层序列5例如能够借助MOCVD工艺生长。替选地,在此和在下文中n型半导体层51和p型半导体层53能够交换。
第二部件3例如能够是由绝缘的陶瓷材料构成的晶片,例如由氮化硅构成的晶片。替选地,第二部件2能够是石英玻璃。在此,蓝宝石基底54的线性热膨胀系数大约是6.1μm/(mK),并且陶瓷材料的第二部件2的线性热膨胀系数大约是1.2μm/(mK)。借此,第一部件1和第二部件2具有不同的热膨胀系数,所述热膨胀系数彼此相差至少5倍。蓝宝石和陶瓷材料的热膨胀系数的所述差异是过大的并且可能会导致在制造期间复合结构的强烈的翘曲,进而器件可能损坏。这可能也会在如下情况下发生:作为连接元件3例如使用金铟合金或金锡合金。该问题的解决方案是,使用根据本发明的连接元件3。
尤其,于是连接元件3具有第一和第二相31、32,如在图2B中示出的那样。图2B示出连接元件3,所述连接元件包括三个相31、32、31。所述连接元件包括两个第一相31,所述第一相通过第二相32彼此空间间隔。尤其,第一相31的组成是相同的,其中第一相31的组成与第二相32的组成不同。第一相和第二相31、32包括至少一种第一金属、第二金属和第三金属,其中所述金属彼此不同。第一和第二相31、32中的各个金属的浓度是不同的。尤其,第一相31中的第一金属Me1的浓度c11大于第二相中的第一金属Me1的浓度c25。第一相中的第一金属Me1的浓度c11能够等于另一第一相31中的第一金属Me1的浓度c11。
连接元件3设置在两个部件1、2之间。在连接元件3和部件1、2之间能够在单侧或在双侧还设置有附着层4。附着层4例如能够包括铂、金或钛或者由其构成。替选地,在器件100中也能够不存在附着层4。
图3A和3B分别示出根据一个实施方式的器件100的示意侧视图。图3A示出在构成连接元件3之前的器件100。
图3B示出最终的器件100,意即至少在步骤D)之后的器件。图3A示出,在两个部件1、2之间并且在两个附着层4之间设置有三个金属层Me1、Me2和Me3。也能够缺少附着层4。层Me1具有第一金属。层Me2具有第二金属。层Me3具有第三金属。在方法步骤C)和D)中在第一温度和/或第二温度影响之后,得到根据图3B的器件100。换言之,各个金属层转换成第一和/或第二相31、32。第一相31包括第一金属Me1、第二金属Me2和第三金属Me3。第二相32同样包括第一金属Me1、第二金属Me2和第三金属Me3。在此,相31、32相互间的区别在于各个金属的浓度。
图4A和4B分别示出根据一个实施方式的器件的示意侧视图。图4A示出在构成连接元件3之前的器件100。
图4B示出至少在方法步骤D)之后的最终的器件4B。图4A和4B与图3A和3B的区别在于:在金属层Me1和第一部件1之间以及在金属层Me3和第二部件2之间不存在附着层4。由此,得到器件100,所述器件具有层序列第一部件1、第一相31、第二相32和第二部件2(参见图4B)。
图5A示出根据一个实施方式的器件100的示意侧视图。图5A与图4B的区别在于,连接元件3的第一相31朝向第二部件2。连接元件3的第二相32朝向第一部件1。与此相比,图4B示出,第一部件1的第一相31和第二部件2的第二相32相向。
图5B示出根据一个实施方式的器件的示意侧视图。图5B的器件100与图5A的器件的区别在于,图5B的器件100具有附加的第一相31。借此,能够产生器件100,所述器件具有对称的构造。尤其,相应的第一相31与第二相32相比具有更大浓度c11的第一金属Me1。
图6A示出根据一个实施方式的用于制造器件的方法。图6A示出,例如在第一部件1的一侧上施加由第一金属Me1构成的层,随后施加由第四金属Me4构成的层,随后施加由第二金属Me2构成的层,和随后施加由第三金属Me3构成的层。在第二部件2的一侧上能够在其表面上施加由第一金属Me1构成的层,由第四金属Me4构成的层,由第二金属Me2构成的层,和由第三金属Me3构成的层。
随后,能够将二者连接并且暴露于第一温度,尤其最大180℃或200℃。在此,第二和第三金属Me2、Me3的层转变成液态的聚集态,并且与第四金属Me1和第一金属Me1的层反应。产生器件100,所述器件具有第一相31、第二相32和第一相31作为连接元件3的层序列。
图6B示出,第一层Me1例如在方法步骤C)之后不完全与第二金属Me2和/或第三金属Me3和/或第四金属Me4反应。在将温度例如提高到第二温度的情况下,体系能够完全反应并且第一金属层Me1能够在两侧消失。得到类似于图2B的器件100的器件100,除了在图6C中在连接元件3和各个部件1、2之间不存在附着层4。
图7A至7C示出器件的示意侧视图以及其制造。在该实施方式中,第一部件1通过承载晶片1形成。承载晶片1借助由第一金属Me1构成的层覆盖。第一金属Me1尤其是铂、镍或钯并且具有65nm的层厚度。由Me1构成的层能够借助于阴极溅射施加。在由Me1构成的层上在下游设置有至少两个第二部件2。在至少两个在下游设置的部件2之间分别设置有由第二金属Me2构成的层和由第三金属Me3构成的层(图7A)。换言之,在图7A中示出的器件100具有一个第一共同的部件1和两个第二部件2。
随后,对图7A的布置结构的处理借助最大为180℃或200℃的第一温度根据方法步骤C)进行。在此,构成连接元件3,所述连接元件具有第一相31和第二相32。第一相31和第二相32分别具有第一金属Me1、第二金属Me2和第三金属Me3或者由其构成(图7B)。在随后的在230℃和400℃之间的第二温度下的加热步骤中,能够产生连接元件3的彻底的完全反应,使得由第一金属Me1构成的层完全消失(图7C)。得到下述布置结构,所述布置结构具有第一部件1和第二部件2,其中分别在两个第二部件2和第一部件1之间设置有第一相31和第二相32,所述第一相和第二相是热力学稳定和机械稳定的。
图8A和8B示出根据一个实施方式的器件的制造。图8A示出,能够提供具有半导体层序列5和蓝宝石层54的第一部件。此外,能够提供第二部件2。随后,在第一部件1或第二部件2上能够分别施加至少一个层。在此,在图8A中示出,将由第一金属Me1构成的层施加到第一部件1上,并且随后施加由第二金属Me2构成的层。在第二部件2上施加由第三金属Me3构成的层。随后,将在步骤B)下产生的布置结构加热到最大180℃,在此第一部件和第二部件1和2能够彼此连接。形成连接元件3,所述连接元件具有第一相31和第二相32。每个相31、32包括不同浓度的第一金属Me1、第二金属Me2和第三金属Me3。
能够将例如由蓝宝石(6.1μm/mK)和氮化硅(1.2μm/mK)构成的两个部件1、2如下彼此连接。
在包括蓝宝石的第一部件1上能够施加由第一金属Me1、例如镍构成的层。层厚度例如能够为450nm。随后,在由第一金属Me1构成的所述层上施加由第二金属Me2、例如铟构成的层,所述层具有150nm的层厚度。在包括氮化硅的第二部件2上能够施加有第一金属Me1、例如镍构成的、层厚度为100nm的层连同由第三金属Me3、例如锡构成的、层厚度为700nm的层和由第二金属Me2、例如铟构成的、层厚度为300nm的层。为了抵抗由不同的热膨胀系数造成的应力,将第一和第二部件1、2在其接触之前加热到不同的温度上。例如,能够将包括氮化硅的第二部件2加热到220℃的温度上。包括蓝宝石的第一部件1能够加热到仅为105℃的温度上。在部件1、2接触时,更热的第二部件2至少加热由第一部件1的第二金属Me2构成的上部的层,这引起熔化进而触发等温凝固反应。在几秒之内将第一部件1接合到第二部件2上或者相反。因此,各个部件1、2的温度差在制造期间冻结。在冷却器件或布置结构的情况下,这与小的处理温度组合都产生被认为毫无疑问的翘曲。在随后的步骤D)中能够将布置结构加热到240℃,并且淬火10分钟。在此,连接元件3能够完全地反应完,其中翘曲在室温下不明显地改变。
在将例如包括面积为4mm2的电子芯片的第一部件1焊接到例如包括导体框的第二部件2上时,第一部件和第二部件1、2之间的热膨胀系数的差异能够引起附着问题。为了避免所述问题,两个部件1、2的连接能够在尽可能低的温度下进行。包括导体框的第二部件2能够在该情况下用由第一金属Me1、例如铂构成、层厚度为350nm的层、随后的由第三金属Me3、例如锡构成的、层厚度为450nm的层和随后的由第二金属Me2、例如铟构成的、层厚度为200nm的层覆层。电子芯片的后侧金属化部通常由层厚度为150nm的第一金属Me1、尤其铂,层厚度为300nm的第二金属Me2、例如铟和层厚度为150nm的第三金属Me3、例如锡构成。在连接时,将包括导体框的第二部件2加热到135℃的温度上。将例如包括电芯片的部件1加热到145℃的温度上。随后,安放第一和第二部件1、2。安放能够借助例如为6N的力进行1.2s的持续时间。借此,在第一和第二部件1、2之间产生连接。随后的温度步骤能够在高于200℃、例如至少为260℃的温度下进行180分钟。
图9A和9B示出根据一个实施方式的用于制造器件的方法的示意侧视图。图9A示出第一部件1,所述第一部件包括半导体层序列5和基底54,所述基底例如由蓝宝石构成的基底。在所述第一部件1上施加由第一金属Me1构成的层,例如层厚度为150nm的镍层。随后,施加由第二金属Me2构成的层,例如层厚度为170nm的铟层。最后,施加由第三金属Me3构成的层,例如层厚度为250nm的锡层。在由第一金属Me1构成的层和第一部件1之间能够可选地设置有附着层4。替选地,在附着层4下游能够设置有包括p型半导体层53、有源层52和n型半导体层51的半导体层序列5和随后的基底54。
此外,提供例如由石英玻璃构成的第二部件2。
在第二部件2之后能够施加由第一金属Me1构成的层,例如层厚度为150nm的镍层。随后,能够施加由第二金属Me2构成的层,例如层厚度为170nm的铟层。随后,能够施加由第三金属Me3构成的层,例如层厚度为250nm的锡层。在由第一金属Me1构成的层和第一部件2之间能够可选地设置有附着层4。
随后,例如在142℃的温度和/或1MPa的压力下进行部件1、2的调温处理和/或连接,使得得到器件100,所述器件在第一和第二部件1、2之间具有层序列:第一部件1、(附着层4)、第一相31、第二相32、第一相31、(附着层4)、第二部件2。
为了将部件1、2尽可能柔和地连接或键合,首先将所述部件相对于彼此上下安置并且在该状态下以10K/min的加热速率从室温开始加热到用于键合的温度上。首先于是能够施加压力。尤其,保持压力120s。随后,能够将部件1、2再次以10K/min的冷却速率冷却到室温上。为了完全地产生连接元件3,即连接元件的金属完全反应,那么将器件在随后的步骤D)中加热到230℃的温度上。尤其,将所述温度保持120分钟。因此,产生根据图9B的器件。图9B的器件对应于图2B的器件。图9A和9B的器件能够具有其他金属,例如第四金属4。
结合附图描述的实施例和其特征也能够根据其他的实施例彼此组合,即使这种组合没有明确地在附图中示出。此外,结合附图描述的实施例能够具有根据概论部分的描述的附加的或替选的特征。
本发明不通过根据实施例进行的描述局限于此。更确切地说,本发明包括任意的新的特征以及特征的任意的新的组合,这尤其包含本文中的特征的任意组合,即使所述特征或所述组合本身没有明确地在本文或实施例中说明。
本专利申请要求德国专利申请10 2015 114 088.8的优先权,其公开内容通过参引的方式并入本文。
附图标记列表:
100 器件
1 第一部件
2 第二部件
3 连接元件
31 第一相
32 第二相
第一相的具有浓度(c11)的第一金属(Me1),
第一相的具有浓度(c12)的第二金属(Me2),
第一相的具有浓度(c13)的第三金属(Me3),
第一相的具有浓度(c14)的第四金属(Me4),
第二相的具有浓度(c25)的第一金属(Me1),
第二相的具有浓度(c26)的第二金属(Me2),
第二相的具有浓度(c27)的第三金属(Me3),
第二相的具有浓度(c28)的第四金属(Me4),
α1 第一热膨胀系数
α2 第二热膨胀系数
4 附着层
5 半导体层序列
51 n型半导体层
52 有源层
53 p型半导体层
54 基底
Claims (16)
1.一种电子器件(100),所述电子器件具有:
-第一部件(1),
-第二部件(2),
-连接元件(3),所述连接元件设置在所述第一部件(1)和所述第二部件(2)之间,其中所述连接元件(3)具有至少一个第一相(31)和第二相(32),
其中所述第一相(31)包括具有浓度(c11)的第一金属(Me1)、具有浓度(c12)的第二金属(Me2)和具有浓度(c13)的第三金属(Me3),
其中所述第二相(32)包括所述第二金属(Me2)、所述第三金属(Me3)和具有浓度(c25)的所述第一金属(Me1),其中所述第一金属(Me1)、所述第二金属(Me2)和所述第三金属(Me3)彼此不同,并且适合于在小于200℃的处理温度下反应,其中适用的是:c11≥c25并且c11≥c13≥c12。
2.根据权利要求1所述的电子器件(100),
其中在所述第二相(32)中,所述第二金属(Me2)具有浓度(c26)并且所述第三金属(Me3)具有浓度(c27),
其中适用的是:c11>c25并且c11>c13>c12并且c12<c26或者c11>c25并且c11>c13>c12并且c25=c27>c26。
3.根据权利要求1或2所述的电子器件(100),
其中所述第一金属(Me1)选自镍、铂和钯。
4.根据权利要求1或2所述的电子器件(100),
其中所述第二金属(Me2)是铟并且所述第三金属(Me3)是锡。
5.根据权利要求1或2所述的电子器件(100),
其中在所述第一相(31)中所述第一金属(Me1)的浓度(c11)在40原子%和65原子%之间,和/或在所述第二相(32)中所述第一金属(Me1)的浓度(c25)在20原子%和40原子%之间。
6.根据权利要求1或2所述的电子器件(100),
其中在所述第一相(31)中所述第二金属(Me2)的浓度(c12)在5原子%和25原子%之间,和/或在所述第二相(32)中所述第二金属(Me2)的浓度(c26)在20原子%和40原子%之间。
7.根据权利要求1或2所述的电子器件(100),
其中在所述第一相(31)中所述第三金属(Me3)的浓度(c13)在15原子%和40原子%之间,和/或在所述第二相(32)中所述第三金属(Me3)的浓度(c27)在30原子%和50原子%之间。
8.根据权利要求1或2所述的电子器件(100),
其中所述第二部件(2)包括发射光的发光二极管,并且其中至少所述第一部件(1)选自:蓝宝石、氮化硅、半导体材料、陶瓷材料、金属和玻璃。
9.根据权利要求1或2所述的电子器件(100),
其中所述第一金属(Me1)具有大于1400℃的熔点,所述第二金属(Me2)具有小于180℃的熔点,并且所述第三金属(Me3)具有小于250℃的熔点,其中所述第二金属和所述第三金属(Me2,Me3)形成熔点小于或等于120℃的共晶混合物。
10.根据权利要求1或2所述的电子器件(100),
所述电子器件在所述第一相(31)中具有带有浓度(c14)的第四金属(Me4)和/或在所述第二相(32)中具有带有浓度(c28)的第四金属(Me4),其中所述第四金属(Me4)具有小于1200℃的熔点,并且在所述第一相和/或所述第二相(31,32)中所述第四金属(Me4)的浓度(c14,c28)是全部金属(Me1,Me2,Me3)的最小浓度。
11.根据权利要求10所述的电子器件(100),
其中所述第四金属(Me4)是金。
12.根据权利要求10所述的电子器件,
其中在所述第一相(31)和/或所述第二相(32)中所述第四金属(Me4)的浓度(c14,c28)最大为5原子%。
13.根据权利要求1或2所述的电子器件(100),
其中所述第一相(31)和所述第二相(32)分别成型为层并且彼此直接接触地设置,其中所述第一相和第二相(31,32)的层相互堆叠,使得所述第一部件(1)的所述第一相(31)和所述第二部件(2)的所述第二相(32)相向。
14.根据权利要求1或2所述的电子器件(100),
其中具有第一热膨胀系数(α1)的所述第一部件(1)不同于具有第二热膨胀系数(α2)的所述第二部件(2),并且所述热膨胀系数彼此相差至少1.5倍。
15.一种用于制造根据权利要求1至14中任一项所述的电子器件(100)的方法,所述方法具有下述步骤:
A)提供第一部件(1)和第二部件(2),
B)将由第一金属(Me1)构成的层、由第二金属(Me2)构成的层和由第三金属(Me3)构成的层施加到所述第一部件和/或第二部件(1,2)上,
C)将在步骤B)下产生的布置结构加热到最大200℃,以构成具有第一相(31)和第二相(32)的连接元件(3),其中所述第一相(31)和所述第二相(32)分别包括所述第一金属(Me1)、所述第二金属(Me2)和所述第三金属(Me3),
D)将在步骤(C)下产生的布置结构加热到在200℃和400℃之间的温度上,以构成热力学稳定和机械稳定的第一和第二相(31,32),
其中至少在步骤D)之前将所述第一部件和第二部件(1,2)彼此连接,
其中所述第一相(31)至少在步骤D)之后包括具有浓度(c11)的所述第一金属(Me1)、具有浓度(c12)的所述第二金属(Me2)和具有浓度(c13)的所述第三金属(Me3),并且所述第二相(32)包括具有浓度(c25)的所述第一金属(Me1)、具有浓度(c26)的所述第二金属(Me2)和具有浓度(c27)的所述第三金属(Me3),其中适用的是:c11≥c25并且c11≥c13≥c12。
16.根据权利要求15所述的方法,
其中所述连接元件至少在步骤C)中构成与所述第一部件(1)和所述第二部件(2)的牢固的连接。
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