TWI476839B - 晶圓次微米接合方法及其接合層 - Google Patents

晶圓次微米接合方法及其接合層 Download PDF

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Publication number
TWI476839B
TWI476839B TW101124384A TW101124384A TWI476839B TW I476839 B TWI476839 B TW I476839B TW 101124384 A TW101124384 A TW 101124384A TW 101124384 A TW101124384 A TW 101124384A TW I476839 B TWI476839 B TW I476839B
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Taiwan
Prior art keywords
metal layer
wafer
bonding
layer
sub
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TW101124384A
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English (en)
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TW201403721A (zh
Inventor
Kuan Neng Chen
Yao Jen Chang
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Univ Nat Chiao Tung
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Priority to TW101124384A priority Critical patent/TWI476839B/zh
Priority to US13/605,849 priority patent/US8951837B2/en
Publication of TW201403721A publication Critical patent/TW201403721A/zh
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Publication of TWI476839B publication Critical patent/TWI476839B/zh

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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Description

晶圓次微米接合方法及其接合層
本發明係有關一種晶圓接合方法及其接合層，特別是指一種晶圓次微米接合方法及其接合層。
擁有傑出性能的三維積體電路(3D-ICs)技術已經被研究單位及工業界視為延續摩爾定律主要的方法。藉由晶圓的堆疊，TSV的內部垂直金屬連線，提供上下層元件更高速的資訊傳輸，將是為來晶片製作的趨勢。舉例來說晶圓接合(Wafer Bonding)為3D IC整合的關鍵步驟之一，此製程是將晶圓進行對準(Alignment)及接合(Bonding)，並藉由TSV實現層對層之導線連接(Layer to Layer Interconnections)。許多晶圓接合方法，都是從MEMS以及傳統封裝技術所演化而來，然而3D IC晶圓接合平台的精密度比MEMS及3D整合技術技術高出5~10倍，3D IC最終產品的對位精密度可達到微米(Micron)，甚至次微米(Sub-Micron)等級。
晶圓接合方法包括：(1)矽的直接接合(Silicon Direct Bonding)、(2)金屬-金屬接合(Metal-Metal Bonding)、(3)聚合物黏着接合(Polymer Adhesive Bonding)等。其中，金屬-金屬接合方式之一是採金屬共晶接合(Metal Eutectic Bonding)，例如：銅錫共晶(Cu-Sn Eutectic)接合。但在此銅錫晶接合的方式下，接合層的厚度會被介金屬化合物物理限制在3微米，再者銅錫的介金屬化合物(IMC)表面過於粗糙，因此接合的可靠度也不佳。
有鑑於此，本發明遂針對上述習知技術之缺失，提出一種嶄新的晶圓 次微米接合方法及其接合層，以有效克服上述之該等問題。
本發明之主要目的在提供一種晶圓次微米接合方法及其接合層，其接合過程僅需在200℃低溫就可以完成100%接合良率，可減少接合溫度對晶圓上之元件的影響，提高可靠度。
本發明之另一目的在提供一種晶圓次微米接合方法及其接合層，其使用次微米厚度的接合，可以降低RC time delay。
本發明之再一目的在提供一種晶圓次微米接合方法及其接合層，其上方金屬層、中間擴散緩衝金屬層與底部金屬層可由濺鍍機或蒸鍍機一次沈積完成，因此具有高生產率之特性。
本發明之又一目的在提供一種晶圓次微米接合方法及其接合層，其可以減少克肯達效應(Kirkendall effect)，減少孔洞，提高可靠度。
為達上述之目的，本發明提供一種用以接合兩個晶圓的晶圓次微米接合方法，其步驟包含有首先提供一第一晶圓與一第二晶圓，然後於第一晶圓與第二晶圓之預接合表面上各形成一接合層，接合層是由一上方金屬層、一中間擴散緩衝金屬層與一底部金屬層所組成，中間擴散緩衝金屬層之熔點高於上方金屬層與底部金屬層，上方金屬層與底部金屬層是選自可相互反應成為共晶相位之金屬材料。最後，將第一晶圓之接合層與第二晶圓之接合層進行接合，接合過程中在中間擴散緩衝金屬層阻隔下，兩上方金屬層先液相接合，至中間擴散緩衝金屬層隨上層金屬熔融後均勻分布，底部金屬層與上方金屬層相互擴散，將上方金屬層完全消耗反應成為一共晶相位之金屬化合物，且中間擴散緩衝金屬層均勻分佈於化合物中。
本發明尚教示一種晶圓次微米接合層，其係形成於一晶圓之欲接合表面上。此接合層包含有一位於晶圓之欲接合表面上的底部金屬層，一位於底部金屬層上的中間緩衝層；一位於中間緩衝層上的上方金屬層，此中間擴散緩衝金屬層之熔點高於上方金屬層與底部金屬層，上方金屬層與底部金屬層是選自可相互反應成為共晶相位之金屬材料。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
本發明提出一種嶄新的晶圓次微米接合方法及其接合層，其利用一擴散緩衝金屬層來緩衝上方金屬層與底部金屬層擴散的速率，大幅下降兩晶圓接合後接合部分的厚度至次微米，以解決既有兩晶圓接合後之接合部分的厚度過高的問題，並解決上方金屬層與底部金屬層所形成之共晶化合物可靠度不良的問題。
請參閱第1圖，其係本發明之晶圓次微米接合層的結構剖視圖。如圖所示，本發明之晶圓次微米接合層10是形成於一晶圓12之欲接合表面上，此接合層10包含有一底部金屬層14，其係位於晶圓12之欲接合表面上；一位於底部金屬層14上的中間擴散緩衝金屬層16；一位於中間擴散緩衝金屬層16上的上方金屬層18，中間擴散緩衝金屬層16之熔點高於上方金屬層18與底部金屬層14，上方金屬層18與底部金屬層14是選自可相互反應成為有物性或化性改變的共晶相位之金屬材料。
上方金屬層18與底部金屬層14之材料體積比為20%至166%。中間擴散緩衝金屬層16之體積厚度是接合層10之體積厚度之0%以上至5%。 由上方金屬層18、中間擴散緩衝金屬層16與底部金屬層14所構成之次微米接合層的總厚度低於1.5微米。
此外，上方金屬層18可選自於錫、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，中間擴散緩衝金屬層16可選自於鎳、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，底部金屬層14可選自於銅、銀、鋁或金。
舉例來說，在低成本考量下，上方金屬層18可選用錫，中間擴散緩衝金屬層16可選用鎳，底部金屬層14可選用銅。
以下係用以說明本發明之晶圓次微米接合方法，在此係以上方金屬層選用錫，中間擴散緩衝金屬層選用鎳，底部金屬層選用銅為範例進行描述。
請一併參閱第2(a)至第2(c)圖，其係本發明之晶圓次微米接合方法的各步驟剖面示意圖。
首先，如第2(a)圖所示，提供一第一晶圓12’與一第二晶圓12”。第一晶圓12’與第二晶圓12”已經完成主動元件的製作，以及表面清洗，以去除微小粒子。於第一晶圓12’與第二晶圓12”之預接合表面上各形成一如先前所述之接合層10’、10”。舉例來說，使用金屬真空濺鍍系統一次緩慢依序沈積作為底部金屬層14’、14”之銅層3000埃(Å)，作為中間擴散緩衝金屬層16’、16”之鎳層100A，作為上方金屬層18’、18”之錫層2000Å。
接續，將接合層10’與接合層10”進行接合。舉例來說，此接合是使用晶圓接合機，施予10K牛頓，溫度上昇速率每秒大於3℃，升溫至250℃維持三十分鐘，並在氮氣中退火250℃三十分鐘。接合過程中在中間擴散緩衝金屬層16’、16”阻隔下，兩上方金屬層18’、18”先液相接合，形成如第2 (b)圖所示。
最後，隨上方金屬層18’、18”與底部金屬層14’、14”相繼熔融後，中間擴散緩衝金屬層16’、16”將分佈於熔融態之上方金屬層18’、18”與底部金屬層14’、14”中，此時因為中間擴散金屬層16’、16”相對於上方金屬層18’、18”與底部金屬層14’、14”是相當的薄，相對的微量，因此幾乎可以說是均勻分佈於熔融態之上方金屬層18’、18”與底部金屬層14’、14”中。隨後，底部金屬層14’、14”與上方金屬層18’、18”相互擴散，將上方金屬層18’、18”完全消耗反應成為一共晶相位之金屬化合物20，且中間金屬層熔化後之金屬離子均勻分佈於化合物20中，如第2(c)圖所示。此金屬化合物20為CuSn(ε-phase)IMC。
鎳層的厚度為50~100Å時可抵擋接合過程時機台上溫度約15分鐘，有助於底部金屬層擴散進去與上方金屬層反應成低電阻率之共晶相位化合物。
本發明具有下列幾項優點：
1.本發明之上方金屬層、中間擴散緩衝金屬層與底部金屬層可由濺鍍機或蒸鍍機一次沈積完成，因此具有高生產率之特性。
2.本發明接合過程僅需在200℃低溫就可以完成，可減少接合溫度對晶圓上之元件的影響，提高可靠度。
3.本發明使用次微米厚度的接合，可以降低RC time delay。
4.本發明可以減少克肯達效應(Kirkendall effect)，減少孔洞，提高可靠度。
再者，請一併參閱第3(a)圖至第3(b)圖，其係本發明之晶圓次微米接合方法的另一實施例各步驟剖面示意圖。此實施例與上述之實施例之 差異在於，將兩接合層前，先依據需求對接合層進行微影蝕刻與沈積，以定義出介電材料區域22，再進行混合接合(hybrid bonding)。接合過程中，上方金屬層、中間擴散緩衝金屬層與底部金屬層的階段過程如先前所述，因此於此不再進行贅述。
再者，更可於上述之接合層10之表面利用半導體製程技術形成一厚度約為50Å的表面金屬層24，以防止上方金屬層18的氧化。此表面金屬層24可選自於鈦、鉭、鈀或鉍，如第4圖所示。
請一併參閱第5圖、表一與表二，其係用以說明在上方金屬層選用錫，中間擴散緩衝金屬層選用鎳，底部金屬層選用銅為範例時，厚度限制上的緣由。考慮到元件的接合溫度限制，藉由銅錫相圖的分析，銅錫在0℃~250℃溫度範圍下有主要兩種晶相，如表一所示，其中較低電阻率之ε-phase可藉由增加銅錫間的比例來獲得，再者考慮為了達到次微米的需求，控制銅層與錫層的厚度分別為3000Å與2000Å可達到低電阻率之共晶化合物。
若固定銅層的厚度為3000Å，改變錫層的厚度由1000Å至5000Å，經過密度與體積的換算，1000Å與2000Å的錫層假設完全消耗而形成 ε-phase，殘餘的銅層厚度分別為1.7KA以及0.38KA。假若繼續提供金屬錫層的厚度，則無法完全將錫層消耗完，因此造成銅層的缺乏，在這種情況下所形成的IMC將是高電阻率的η-phase。
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。
10、10’、10”‧‧‧接合層
12、12’、12”‧‧‧晶圓
14、14’、14”‧‧‧底部金屬層
16、16’、16”‧‧‧中間擴散緩衝金屬層
18、18’、18”‧‧‧上方金屬層
20‧‧‧化合物
22‧‧‧介電材料區域
24‧‧‧表面金屬層
第1圖是本發明之晶圓次微米接合層的結構剖視圖。
第2(a)至第2(c)圖是本發明之晶圓次微米接合方法的各步驟剖面示意圖。
第3(a)圖至第3(b)圖是本發明之晶圓次微米接合方法的另一實施例各步驟剖面示意圖。
第4圖是本發明之晶圓次微米接合層的另一實施例示意圖。
第5圖是銅錫相圖。
10‧‧‧接合層
12‧‧‧晶圓
14‧‧‧底部金屬層
16‧‧‧中間擴散緩衝金屬層
18‧‧‧上方金屬層

Claims (15)

  1. 一種晶圓次微米接合方法，其係用以接合兩個晶圓，該晶圓次微米接合方法包含有下列步驟：a.提供一第一晶圓與一第二晶圓；b.於該第一晶圓與該第二晶圓之預接合表面上各形成一接合層，該接合層是由一上方金屬層、一中間擴散緩衝金屬層與一底部金屬層所組成，該中間擴散緩衝金屬層之熔點高於該上方金屬層與該底部金屬層，該上方金屬層與該底部金屬層是選自可相互反應成為共晶相位之金屬材料，該中間擴散緩衝金屬層之體積厚度是該接合層之體積厚度之0%以上至5%；以及c.將該第一晶圓之接合層與該第二晶圓之接合層進行接合，接合過程中在該中間擴散緩衝金屬層阻隔下，兩該上方金屬層先液相接合，至該中間擴散緩衝金屬層隨該上方金屬層熔融後均勻分佈，該底部金屬層與該上方金屬層相互擴散，將該上方金屬層完全消耗反應成為一共晶相位之金屬化合物，且該中間金屬層均勻分佈於該化合物中。
  2. 如請求項1所述之晶圓次微米接合方法，其中該上方金屬層與該底部金屬層之材料體積比為20%至166%。
  3. 如請求項1所述之晶圓次微米接合方法，其中該共晶相位之化合物厚度低於1.5微米。
  4. 如請求項1所述之晶圓次微米接合方法，更包含有於步驟c前對該接合層進行微影蝕刻與沈積，以定義出介電材料區域以及垂直導線區域。
  5. 如請求項1所述之晶圓次微米接合方法，其中該共晶化合物佔接合後之 兩該接合層體積比為大於0%且小於等於76%。
  6. 如請求項1所述之晶圓次微米接合方法，其中該上方金屬層可選自於錫、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，該中間擴散緩衝金屬層可選自於鎳、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，該底部金屬層可選自於銅、銀、鋁或金。
  7. 如請求項6所述之晶圓次微米接合方法，其中該上方金屬層為錫，該中間擴散緩衝金屬層為鎳，該底部金屬層為銅。
  8. 如請求項7所述之晶圓次微米接合方法，其中該步驟c所使用之接合溫度為250℃，採用每秒3℃的升溫速度維持30分鐘。
  9. 如請求項1所述之晶圓次微米接合方法，其中該上方金屬層、該中間擴散緩衝金屬層與該底部金屬層由濺鍍機或蒸鍍機一次沈積完成。
  10. 如請求項1所述之晶圓次微米接合方法，其中該上方金屬層表面更形成有一表面金屬層，以防止該上方金屬層之表面產生氧化。
  11. 一種晶圓次微米接合層，其係形成於一晶圓之欲接合表面上，該接合層包含有：一底部金屬層，其係位於該晶圓之欲接合表面上；一中間緩衝層，其係位於該底部金屬層上；以及一上方金屬層，其係位於該中間緩衝層上，該中間擴散緩衝金屬層之熔點高於該上方金屬層與該底部金屬層，該上方金屬層與該底部金屬層是選自可相互反應成為共晶相位之金屬材料，該中間擴散緩衝金屬層之體積厚度是該接合層之體積厚度之0%以上至5%。
  12. 如請求項11所述之晶圓次微米接合層，其中該上方金屬層與該底部金屬 層之材料體積比為20%至166%。
  13. 如請求項11所述之晶圓次微米接合層，其中該上方金屬層可選自於錫、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，該中間擴散緩衝金屬層可選自於鎳、銦、鉛、鎘、鈷、鐵、鋅、鉻、錳、鈦、鉭、鈀或鉍，該底部金屬層可選自於銅、銀、鋁或金。
  14. 如請求項13所述之晶圓次微米接合層，其中該上方金屬層為錫，該中間擴散緩衝金屬層為鎳，該底部金屬層為銅。
  15. 如請求項11所述之晶圓次微米接合層，更包含有一表面金屬層，其係位於該上方金屬層表面上，以防止該上方金屬層之表面產生氧化。
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