CN107709272B - 用于连接至少两个部件的方法 - Google Patents
用于连接至少两个部件的方法 Download PDFInfo
- Publication number
- CN107709272B CN107709272B CN201680038955.3A CN201680038955A CN107709272B CN 107709272 B CN107709272 B CN 107709272B CN 201680038955 A CN201680038955 A CN 201680038955A CN 107709272 B CN107709272 B CN 107709272B
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- Prior art keywords
- layer
- metal
- component
- donor
- oxygen
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- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 126
- 229910052751 metal Inorganic materials 0.000 claims abstract description 125
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 93
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 91
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 61
- 239000001301 oxygen Substances 0.000 claims abstract description 61
- 238000002844 melting Methods 0.000 claims abstract description 21
- 230000008018 melting Effects 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000155 melt Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 53
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 20
- 229910052718 tin Inorganic materials 0.000 claims description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910001887 tin oxide Inorganic materials 0.000 claims description 14
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229910003437 indium oxide Inorganic materials 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 3
- 229910001882 dioxygen Inorganic materials 0.000 claims 3
- 230000005693 optoelectronics Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- -1 nitride compound Chemical class 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- UKGJZDSUJSPAJL-YPUOHESYSA-N (e)-n-[(1r)-1-[3,5-difluoro-4-(methanesulfonamido)phenyl]ethyl]-3-[2-propyl-6-(trifluoromethyl)pyridin-3-yl]prop-2-enamide Chemical compound CCCC1=NC(C(F)(F)F)=CC=C1\C=C\C(=O)N[C@H](C)C1=CC(F)=C(NS(C)(=O)=O)C(F)=C1 UKGJZDSUJSPAJL-YPUOHESYSA-N 0.000 description 1
- 229910004607 CdSnO3 Inorganic materials 0.000 description 1
- 229910005264 GaInO3 Inorganic materials 0.000 description 1
- 229910017902 MgIn2O4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910003107 Zn2SnO4 Inorganic materials 0.000 description 1
- 229910007694 ZnSnO3 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
本发明涉及一种用于连接至少两个部件(1,2)的方法,所述方法具有步骤:A)提供至少一个第一部件(1)和至少一个第二部件(2),B)将至少一个施主层(3)施加到第一部件和/或所述第二部件(1,2)上,其中施主层(3)积聚有氧(31),C)将金属层(4)施加到施主层(3)、第一部件和/或第二部件(1,2)上,D)至少将金属层(4)加热到第一温度(T1),使得金属层(4)熔化并且第一部件(1)和第二部件(2)彼此连接,并且E)将该系统加热到第二温度(T2),使得氧(31)从施主层(3)转移到金属层(4)中,并且金属层(4)转化成稳定的金属氧化物层(5),其中金属氧化物层(5)具有比金属层(4)更高的熔化温度,其中至少施主层(3)和金属氧化物层(5)将第一部件(1)与第二部件(2)彼此连接。
Description
技术领域
本发明涉及一种用于连接至少两个部件的方法。
背景技术
迄今,部件借助连接技术,例如二氧化硅-二氧化硅直接键合、粘接和金属键合彼此连接。
发明内容
本发明的目的是提供一种用于连接至少两个部件的方法,所述方法产生在两个部件之间的稳定的连接。
所述目的通过根据用于连接至少两个部件的方法实现。本发明的有利的设计方案和改进方案是实施例的主题。
在至少一个实施方式中,用于连接至少两个部件的方法包括步骤:
A)提供至少一个第一部件和至少一个第二部件,
B)将至少一个施主层施加到第一部件和/或第二部件上,其中施主层积聚有氧,
C)将金属层施加到施主层、第一部件和/或第二部件上,
D)至少将金属层加热到第一温度,使得金属层熔化并且第一部件和第二部件彼此连接,并且
E)将该系统加热到第二温度,使得氧从施主层转移到金属层中,并且金属层转化成稳定的金属氧化物层,其中金属氧化物层具有比金属层更高的熔化温度,其中至少施主层和金属氧化物层将第一部件与第二部件彼此连接。
尤其,方法按字母顺序A)至E)进行。替选地或附加地,能够存在其他步骤,例如在步骤B)之前,氧能够借助注入方法来引入施主层中以在施主层中积聚氧。
根据至少一个实施方式,方法在步骤A)中提供第一部件和第二部件。
第一部件和/或第二部件能够选自不同数量的材料和元件。第一部件和/或第二部件例如能够分别选自:蓝宝石、氮化硅、半导体材料、陶瓷材料、金属和玻璃。
替选地或附加地,第一部件和/或第二部件也能够是硬管和/或软管。尤其,管是真空管。
例如,两个部件之一能够是半导体或陶瓷晶片,例如出自蓝宝石、硅树脂、锗、氮化硅、氧化铝、发光陶瓷,例如YAG中的成形的材料。此外,可行的是:至少一个部件成形为印刷电路板(PCB)、金属导体框或其他种类的连接载体。此外,所述部件中的至少一个例如能够包括电子芯片、光电子芯片、发光的发光二极管、激光器芯片、光电探测器芯片或晶片或具有多个这种芯片。尤其,第二部件和/或第一部件包括发光的发光二极管,简称LED。尤其,第二部件包括发光的发光二极管并且第一部件包括上述材料中的至少一种。
包括发光的发光二极管的部件优选设计用于:发射蓝光、红光、绿光或白光。
发光的发光二极管包括至少一个光电子半导体芯片。光电子半导体芯片能够具有半导体层序列。半导体芯片的半导体层序列优选基于III-V族化合物半导体材料。半导体材料优选是氮化物化合物半导体材料,如AlnIn1-n-mGamN,或也是磷化物化合物半导体材料,如AlnIn1-n-mGamP,其中分别适用0≤n≤1,0≤m≤1并且n+m≤1。半导体材料同样能够是AlxGa1- xAs,其中0≤x≤1。在此,半导体层序列能够具有掺杂材料以及附加的组成部分。然而,为简单起见,仅说明半导体层序列的晶格的主要组成部分、即Al、As、Ga、In、N或P,即使所述主要组成部分能够部分地通过少量其他材料替代和/或补充也如此。
半导体层序列包含具有至少一个pn结和/或具有一个或多个量子阱结构的有源层。在LED或半导体芯片运行中,在有源层中产生电磁辐射。辐射的波长或波长最大值优选位于紫外的和/或可见的和/或红外的光谱范围中,尤其在420nm和800nm之间的波长中,例如在440nm和480nm之间的波长中,其中包括端值。
根据至少一个实施方式,方法具有步骤B):将至少一个施主层施加到第一部件和/或第二部件上。施主层尤其是积聚有氧的层。
根据至少一个实施方式,施主层具有至少一种金属的氧化物和/或由至少一种金属的氧化物构成。施主层尤其具有氧化铟锡、氧化铟、氧化锌和/或氧化锡或由其构成。氧化铟锡、氧化铟、氧化锌或氧化锡尤其积聚有氧。
施主层积聚有氧在此和在下文中表示:施主层具有超化学计量份额的氧。氧在施主层中能够与施主层的材料共价结合。替选地或附加地,氧能够嵌入施主层、尤其施主层的主晶格的间隙中。换言之,因此氧不共价结合到施主层上。
根据至少一个实施方式,方法具有步骤C):将金属层施加到施主层上。替选地或附加地,金属层施加到第一部件和/或第二部件上。
施主层尤其具有金属氧化物,例如氧化锌、氧化锡、氧化镉、氧化钛、氧化铟或混合的金属氧化物,如氧化铟锡(ITO)。术语“金属氧化物”包括二元金属氧化物,例如ZnO、SnO2或In2O3和三元金属氧化物,例如Zn2SnO4、CdSnO3、ZnSnO3、MgIn2O4、GaInO3、Zn2In2O5或In4Sn3O12或不同氧化物的混合物。在此,金属氧化物可以非强制性地具有化学计量的组分。施主层尤其由氧化铟锡(ITO)成形。
根据至少一个实施方式,金属层具有铟、锡、锌或铟和锡的组合。
根据至少一个实施方式,方法包括步骤D):将至少一个金属层加热到第一温度T1,使得金属层熔化并且第一部件和第二部件彼此连接。换言之,将第一温度提高至,使得超过金属层的金属或金属的混合物的熔化温度,以至于金属层的金属熔化。例如,铟具有156.6℃的熔化温度。锡具有231.9℃的熔化温度。金属层也能够具有多种金属或由多种金属构成。金属层尤其具有铟和锡的组合。铟和锡尤其形成共晶的混合物。由具有52重量%的铟和具有48重量%的锡构成的混合物具有117℃至118℃的熔化温度。通过熔化金属层,金属层表现如金属焊料。
金属层尤其具有延展(duktiv)特性。金属层将第一部件和第二部件彼此连接。例如,连接能够是第一部件和第二部件的机械连接。此外,经由金属层也能够将第一部件与第二部件电连接。金属层和施主层或金属氧化物层和施主层尤其形成连接元件,所述连接元件将第一部件与第二部件连接。连接元件尤其以与第一部件和第二部件的直接机械接触和/或电接触方式设置。
根据至少一个实施方式,方法具有步骤E):将该系统加热到第二温度,使得氧从施主层转移到金属层中,并且金属层转化成稳定的金属氧化物层。尤其,金属氧化物层具有比金属层更高的熔化温度。在此,至少施主层和金属氧化物层将第一部件与第二部件连接或反之亦然。
换言之,通过经由施主层和金属氧化物层将两个部件连接产生稳定的机械连接并且必要时附加地产生电连接。
根据至少一个实施方式,步骤E)中的第二温度大于步骤D)中的第一温度。尤其,第一温度和第二温度彼此相差至少1.5倍;1.8倍;1.9倍;2倍;2.5倍或3倍。通过将尤其包括金属层、第一部件、第二部件和施主层的系统加热到第二温度的方式,过量的氧从施主层转移到金属层中。在形成金属氧化物层的情况下进行金属层的氧化或自动氧化。金属层转化成固体的金属氧化物层。金属氧化物层尤其是机械稳定的。金属氧化物层具有比金属层更高的熔化温度或更高的再熔化温度。金属氧化物层由金属层和存在于施主层中的氧产生。借此,不需要输送其他外部的反应配对物来产生稳定的连接。
根据至少一个实施方式,金属层具有铟、锌、锡或铟和锡的组合。在铟作为金属层的情况下,氧化铟作为金属氧化物层形成。在锡作为金属层的情况下,氧化锡作为金属氧化物层形成。在锌作为金属层的情况下,氧化锌作为金属氧化物层形成。在铟和锡的混合物作为金属层的情况下,氧化铟锡作为金属氧化物层形成。
替选地或附加地,施主层能够是由氧化铟、氧化锡或氧化铟锡构成的。施主层尤其由氧化铟锡成形。氧化铟锡具有透明和能导电的优点。由此发生少量吸收可见波长范围中的光。此外,为了制造部件,尤其光电子半导体组件提供足够的热和机械稳定性。
与金属层对比,金属氧化物层具有更高的熔点并且可能是透明的。例如,由铟构成的金属层具有156.9℃的熔点,并且由氧化铟(In2O3)构成的金属氧化物层具有1910℃的更高的熔点。例如,由锡构成的金属层具有231.9℃的熔点并且由氧化锡构成的金属氧化物层具有1630℃的更高的熔点。例如,由铟和锡构成的金属层具有118℃的熔点并且由氧化铟锡(ITO)构成的金属氧化物层具有大约1900℃的更高的熔点。
方法类似于通常在半导体行业中使用的键合工艺,其中通过等温凝固反应构成连接。然而,主要区别是:金属氧化物层不通过多个合金元素的混合和反应形成,而是通过用来自施主层的氧来氧化金属层形成。因此,产生具有足够高的熔点的连接元件,所述连接元件例如适合于生产光电子半导体组件。
发明人认识到,借助在此提出的接合方法,尤其不透明的金属连接元件能够通过氧化转化成陶瓷的并且可能也传导性的并且透明的层。尤其包括施主层和金属氧化物层的所述连接元件具有与第一部件和第二部件的高的连接力或附着力。连接元件能够具有良好的光学特性,如对于可见光>80%或90%的高的透明度。此外,连接元件能够附加地具有电学特性,如高的导电性。
根据至少一个实施方式,施主层和金属氧化物层在步骤D)之后具有相同的金属氧化物。附加地,施主层和金属氧化物层能够仅仅通过其氧的份额区分。
根据至少一个实施方式,施主层和金属层通过溅射施加。替选地或附加地,金属氧化物层能够通过金属层的氧化产生。替选地,能够使用热蒸镀替代溅射。
根据至少一个实施方式,施主层借助在步骤B)溅射至少一种金属和氧在形成金属氧化物的情况下产生。金属层通过例如在相同设备中溅射至少一种金属来产生。尤其,金属层的金属对应于施主层的金属氧化物的金属。
根据至少一个实施方式,在步骤B)中进行氧的引入。尤其,具有速度k1和/或份额n1的连续的或不连续的氧气流用来将氧引入到施主层中。尤其,在步骤C)中的氧具有速率k2<k1和/或份额n2<n1,使得产生金属层。换言之,例如,金属、如锡和氧作为氧化锡施加来产生施主层。能够进行稳定的氧气流动,使得形成氧化锡。随着该方法的进行能够降低氧的份额,使得锡金属状地沉积并且不形成氧化锡。因此,形成金属层。紧接着,在方法步骤D)中,金属层能够熔化并且将两个部件连接。在紧接着具有第二温度的加热步骤中,氧随后能够从富含氧的施主层中转移到金属层中,从而例如由金属层的金属、如锡,金属氧化物、如氧化锡构成为金属氧化物层。换言之,在此,除氧之外,不需要其他反应配对物来形成稳定的连接元件。
根据至少一个实施方式,金属层和施主层分别具有10nm至200nm、尤其在40nm和120nm之间,例如60nm的层厚度。金属氧化物层能够具有10nm至200nm、尤其在40nm和120nm之间,例如60nm的层厚度。
根据至少一个实施方式,第一温度选自25℃至250℃的温度范围、尤其在120℃至240℃之间,例如170℃。第二温度尤其具有比第一温度更高的温度。尤其,第二温度大于200℃,例如230℃。
根据至少一个实施方式,施主层的氧借助离子注入方法在步骤B)之后引入到施主层中。离子注入方法是本领域技术人员已知的并且因此在此不详细阐述。
替选地,施主层的氧能够借助氧气流在步骤B)期间引入到施主层中。
氧在两种方法中能够以超化学计量的比例嵌入施主层中。尤其,施主层由氧化铟锡形成,使得在引入氧之后存在具有超化学计量份额的氧的氧化铟锡。氧尤其嵌入主晶格的孔或间隙中。
根据至少一个实施方式,第一部件和第二部件的连接在压力下进行。尤其,压力是最小1.8bar,例如2bar。
在此处提出的方法中,例如,光电子半导体器件能够彼此直接连接。方法例如能够替代直接键合。在直接键合中的主要挑战是对表面的高要求。所述表面必须尽可能地不含颗粒并且是非常光滑的。此外,部件仅允许非常小的弯曲并且具有总厚度变化(totalthickness variation,TTV)中小的波动。因此,具有10nm大小的颗粒产生具有大约100μm大小的空腔(缩孔(Lunker))。在此处提出的方法中,具有10nm大小的颗粒能够被压入并且嵌入到在连接时液态的金属层中,而不产生空腔。这提供在对表面质量低要求方面的大的优点,这能够产生更高的收益率并且降低工艺步骤的数量。
还提出一种器件。器件尤其包括至少两个部件、施主层和金属氧化物层。尤其,器件由上述用于连接至少两个部件的方法制造。这就是说,全部针对方法公开的特征也针对器件公开并且反之亦然。
根据至少一个实施方式,器件具有至少两个部件,第一部件和第二部件。在两个部件之间设置施主层和金属氧化物层。金属氧化物层通过金属层的氧化产生。施主层是积聚氧的。引入氧来氧化金属层,以在施主层中产生金属氧化物层。施主层和金属氧化物层尤其具有相同的材料。施主层和金属氧化物层优选由氧化铟锡、氧化锡或氧化铟成形。
根据至少一个实施方式,器件具有光电子半导体组件作为第一部件和/或第二部件。尤其,光电子半导体组件是至少一种III-V族化合物半导体材料并且具有pn结。
根据至少一个实施方式,器件具有至少两个或刚好两个半导体层序列,所述半导体层序列分别设计用于发射在相同或不同的波长范围中的辐射。在器件运行中,至少两个半导体层序列尤其发射不同的辐射,所述辐射选自蓝色的、红色的和绿色的波长范围。半导体层序列包括至少一个p掺杂的半导体层、至少一个n掺杂的半导体层和具有pn结的有源层。在至少两个半导体层序列之间设置至少一个施主层、尤其一个或两个施主层,和一个金属氧化物层。在两个施主层的情况下,一个施主层直接地、即以直接机械接触的方式设置在一个半导体层序列上,并且另一施主层直接地、即以直接机械接触的方式设置在另一半导体层序列上。在两个施主层之间设置金属氧化物层,所述金属氧化物层直接邻接于一个施主层上和直接邻接于另一施主层上。换言之,器件具有如下结构:半导体层序列-施主层-金属氧化物层-施主层-半导体层序列。因此,器件能够产生任意可行颜色的辐射。
附加地,在器件中也能够存在超过两个,例如三个、四个或五个半导体层序列。于是,相邻的半导体层序列通过两个施主层和一个金属氧化物层彼此分开。
根据至少一个实施方式,这两个施主层和这一个金属氧化物层分别由相同的材料成形,尤其由透明的和/或传导性的材料,如氧化铟锡成形。
附图说明
其他优点、有利的实施方式和改进形式从下文中结合附图描述的实施例中得出。
附图示出:
图1A至图5C分别示出根据一个实施方式的、用于连接至少两个部件的方法的示意侧视图。
在实施例和附图中,相同的、同类的或起相同作用的元件能够分别设置有相同的附图标记。示出的元件和其相互的大小比例不能够视为是符合比例的。更确切地说,为了更好的示出和/或为了更好的理解能够夸张大地示出各个元件,例如层、组件、器件和区域。
具体实施方式
图1A和图1B示出根据一个实施方式的、用于连接或接合至少两个部件的方法。图1A示出至少提供第一部件1和第二部件2(步骤A))。施主层3尤其以直接机械接触和/或电接触的方式施加到第一部件1和/或第二部件2上。施主层3尤其积聚有氧31。例如,施主层由氧化铟锡成形。氧化铟锡中的氧31尤其积聚到混合氧化物氧化铟锡(ITO)的晶格的间隙中。金属层4尤其直接设置在施主层3下游。施主层3和金属层4尤其通过溅射从相同的设备中施加。金属层尤其具有与施主层3的金属混合氧化物或金属氧化物的金属相同的金属(步骤B)和步骤C))。紧接着,至少将金属层4或具有第一部件和/或第二部件、施主层3和金属层4的整个系统加热到第一温度T1。尤其,第一温度T1大至,使得金属层4熔化并且第一部件1和第二部件2彼此连接。这尤其是机械连接和/或电连接(步骤D))。紧接着,该系统能够被加热到第二温度T2,使得氧31从施主层3转移到金属层4中。金属氧化物层5通过氧化由具有金属的金属层4形成。金属氧化物层5尤其是机械稳定的和/或透明的。在此,金属氧化物层5具有比金属层4更高的再熔化温度。由此,在第一部件和第二部件1、2之间产生出色的连接。
图1B示出当两个部件彼此连接时的示意侧视图。在此,该系统具有第一部件1、随后为施主层3、随后为金属氧化物层5和随后为第二部件2。替选地,施主层3也能够设置在第二部件2下游。随后将金属氧化物层5设置在施主层3下游,并且所述金属氧化物层又设置在第一部件1的下游。
图2A和图2B示出根据一个实施方式的至少两个部件1、2连接。施主层3能够施加到第一部件1上。施主层3尤其积聚有氧31(在此未示出)。金属层4能够施加在第二部件2上。紧接着,能够执行方法步骤D)和方法步骤E)。在此,形成器件100,所述器件具有第一部件1、随后为施主层3、随后为金属氧化物层5和随后为第二部件2。换言之,金属层4通过用存在于施主层中的氧31氧化转化成金属氧化物层5。
图3A至图3B示出用于连接至少两个部件1、2的方法。图3A示出部件1。替选地,图3A示出第二部件2。部件1、2尤其构成是硬管形的。尤其,两个部件1、2分别是硬管。施主层3施加在相应的部件1、2的横截面上。紧接着,能够施加金属层4(图3B)。连接或接合至少两个硬管,以便在两个硬管之间产生牢固的连接(图3C)。
图4A和图4B示出根据一个实施方式的、用于连接至少两个部件1、2的方法。第二部件2尤其具有光电子半导体组件或LED。图4A和图4B与图1A和图2B的区别在于:两个第二部件2施加到第一部件1上。替选地或附加地,也能够将超过两个第二部件2施加到第一部件1上或反之亦然。积聚有氧31的施主层3能够施加到第一部件1上。紧接着,施加金属层4并且施加第二部件2。第一部件和第二部件1、2在步骤D)中彼此连接,其中在那金属层4加热到第一温度T1,使得超过熔化温度。由此存在熔化形式的金属层4并且在第一部件和相应的第二部件2之间能够产生连接。在具有第二温度T2的另一加热步骤中,金属层能够借助施主层3的氧31转化成金属氧化物层5。产生具有施主层3和金属氧化物层5的连接元件,所述金属氧化物层在两个部件1、2之间产生牢固的机械连接和/或电连接。紧接着,存在于共同的第一部件1上的第二部件2能够被分割7。这例如能够借助锯割或激光分离方法进行。
尤其III-V族半导体层也能够设置在第一部件和/或第二部件1、2上。尤其,随后第一部件和/或第二部件1、2能够成形为生长衬底。首先,能够将由金属氧化物,例如氧化铟锡构成的施主层3施加到III-V族半导体层的暴露的表面上。
由氧化铟锡构成的施主层3尤其具有超化学计量份额的氧。尤其,沉积具有60nm厚度的施主层3。施主层3是反应性的,即例如金属微粒,例如铟和锡与氧反应成金属氧化物,如氧化铟锡。
施主层3的施加通过溅射进行,其中添加氧至工艺气体。尤其,用于溅射的靶的组分的90重量%是铟和10重量%是锡。在另一工艺中,中断将氧混合至工艺气体,使得至少随着施加的施主层3、尤其铟锡层的厚度的增加,在所述施主层中存在越来越少的氧。尤其进一步溅射,直至在表面上存在尤其由铟和锡构成的金属层4。
金属层尤其具有4nm至8nm,例如5nm的厚度。紧接着,第一部件和第二部件1、2能够彼此被连接、尤其被连接。连接尤其能够在<200℃的第一温度T1、例如180℃下执行。部件1、2从室温、即25℃起加热到用于连接的第一温度T1。在达到第一温度T1时,层尤其用>1.8bar,例如2bar的压力相互挤压。部件1、2在该状态下能够保持大约五分钟。
紧接着,温度能够进一步升高到第二温度T2,例如升高到直至350℃。在该温度下,两个部件1、2能够加热达一小时。在此,氧31尤其从施主层3扩散到尤其由铟-锡构成的金属层4中,并且金属层4的金属转化成金属氧化物层5。
尤其,金属氧化物层5是陶瓷的。替选地或附加地,金属氧化物层5是光学透明的。替选地或附加地,金属氧化物层5是导电的。金属氧化物层优选由氧化铟锡构成。经由施主层3和金属氧化物层5在第一部件和第二部件1、2之间的连接现在具有比先前的金属层4高得多的熔点。此外,与金属层4相比,金属氧化物层5能够成形为是透明的。
图5A至图5C示出根据一个实施方式的、用于连接或接合至少两个半导体层序列H1、H2的方法。图1A示出至少提供第一部件1,所述第一部件具有半导体层序列H1和例如由蓝宝石构成的生长衬底W1。图1A还示出至少提供第二部件2,所述第二部件具有半导体层序列H2和例如由蓝宝石构成的生长衬底W2。分别将施主层3尤其以直接机械连接和/或电连接的方式施加到第一部件1和第二部件2上并且紧接着分别施加金属层4。
紧接着,进行两个部件1、2的连接,其中金属层4转化成金属氧化物层5(图5B)。因此,产生如下层结构:生长衬底W2-半导体层序列H2-施主层3-金属氧化物层5-施主层3-半导体层序列H1-生长衬底W1。
半导体层序列H1、H2尤其直接邻接于相应的施主层3。
紧接着,如图5C中示出,能够移除第一部件1的生长衬底W1并且将施主层3和金属层4施加到半导体层序列H1上。于是,图5A的步骤能够任意用其他部件,例如,第一部件、第二部件或第三部件3重复,其中产生器件,所述器件例如具有三个半导体层序列H1、H2、H3,其中相邻的半导体层序列分别通过至少一个施主层3、尤其两个施主层3和一个金属氧化物层5彼此分开。半导体层序列H1、H2、H3尤其发射不同波长的辐射,例如出自红色的、黄色的和蓝色的波长范围中的辐射,使得器件100的总发射能够具有可见光范围的任意波长,例如白色的混合光。尤其,相应的施主层3和金属氧化物层5由氧化铟锡成形。因此,能够降低发射的辐射的吸收损失。
结合附图描述的实施例和其特征也能够根据其他实施例彼此组合,即使这些组合在附图中未明确示出也如此。此外,结合附图描述的实施例能够具有根据概述部分中的描述的附加的或替选的特征。
本发明不通过根据实施例进行的描述而限制于此。更确切地说,本发明包括每个新的特征以及特征的每个组合,这尤其是包含在权利要求中的特征的每个组合,即使该特征或者该组合本身未详细地在权利要求中或者实施例中说明时也是如此。
本专利申请要求德国专利申请10 2015 111 040.7的优先权,所述德国专利申请的公开内容通过参考并入本文。
附图标记列表
1 第一部件
2 第二部件
3 施主层
31 积聚氧的施主层
4 金属层
5 金属氧化物层
6 氧气流
7 分割
T1 第一温度
T2 第二温度
Claims (15)
1.一种用于连接至少两个部件(1,2)的方法,所述方法具有步骤:
A)提供至少一个第一部件(1)和至少一个第二部件(2),
B)将至少一个施主层(3)施加到所述第一部件(1)和/或所述第二部件(2)上,其中所述施主层(3)具有至少一种金属的氧化物并且积聚有氧(31),使得所述施主层具有超化学计量份额的氧,
C)将金属层(4)施加到所述施主层(3)、所述第一部件(1)或所述第二部件(2)上,
D)至少将所述金属层(4)加热到第一温度(T1),使得所述金属层(4)熔化并且所述第一部件(1)和所述第二部件(2)彼此连接,并且
E)将该系统加热到第二温度(T2),使得所述氧(31)从所述施主层(3)转移到所述金属层(4)中,并且所述金属层(4)转化成稳定的金属氧化物层(5),其中所述金属氧化物层(5)具有比所述金属层(4)更高的熔化温度,其中至少所述施主层(3)和所述金属氧化物层(5)将所述第一部件(1)与所述第二部件(2)彼此连接。
2.根据权利要求1所述的方法,
其中所述施主层(3)由氧化铟锡、氧化铟、氧化锌或氧化锡构成,其中氧化铟锡、氧化铟或氧化锡积聚有氧(31)。
3.根据权利要求1或2所述的方法,
其中所述金属层(4)具有铟、锡、锌或由铟和锡构成的组合,其中在铟作为金属层(4)的情况下氧化铟作为金属氧化物层(5)形成,其中在锡作为金属层(4)的情况下氧化锡作为金属氧化物层(5)形成,其中在锌作为金属层(4)的情况下氧化锌作为金属氧化物层(5)形成,并且其中在由铟和锡的混合物作为金属层(4)的情况下氧化铟锡作为金属氧化物层(5)形成。
4.根据权利要求1或2所述的方法,
其中所述施主层(3)和所述金属氧化物层(5)在步骤D)之后具有相同的金属氧化物。
5.根据权利要求1或2所述的方法,
其中所述施主层(3)和所述金属层(4)通过溅射产生,并且所述金属氧化物层(5)通过所述金属层(4)的氧化产生。
6.根据权利要求5所述的方法,
其中所述施主层(3)借助在步骤B)中溅射至少一种金属和氧在形成金属氧化物的情况下产生,其中所述金属层(4)通过在相同的设备中溅射至少一种金属来产生,其中所述金属层(4)的所述金属对应于所述施主层(3)的所述金属氧化物的所述金属。
7.根据权利要求6所述的方法,
其中在步骤B)中引入具有速率k1和份额n1的连续的氧气流(6),以将所述氧(31)引入到所述施主层(3)中,其中在步骤C)中所述氧气流(6)具有速率k2<k1和份额n2<n1,使得产生所述金属层(4)。
8.根据权利要求1或2所述的方法,
其中所述第二部件(2)包括发射光的发光二极管,并且其中至少所述第一部件(1)选自:蓝宝石、氮化硅、半导体材料、金属和玻璃。
9.根据权利要求1或2所述的方法,
其中所述第二部件(2)包括发射光的发光二极管,并且其中至少所述第一部件(1)包括陶瓷材料。
10.根据权利要求1或2所述的方法,
其中所述第一部件(1)和/或所述第二部件(2)是硬管和/或软管。
11.根据权利要求1或2所述的方法,
其中所述步骤E)中的所述第二温度(T2)大于所述步骤D)中的所述第一温度(T1),并且所述第一温度(T1)和所述第二温度(T2)彼此相差至少1.5倍。
12.根据权利要求1或2所述的方法,
其中所述施主层(3)的所述氧(31)借助离子注入方法在所述步骤B)之后引入到所述施主层(3)中,或其中所述施主层(3)的所述氧(31)借助氧气流(6)在所述步骤B)期间引入到所述施主层(3)中。
13.根据权利要求1或2所述的方法,
其中所述第一部件(1)和所述第二部件(2)的连接在至少1.8bar的压力下进行。
14.一种器件,所述器件具有至少两个半导体层序列(H1,H2),所述半导体层序列分别设计用于发射在相同或不同的波长范围中的辐射,其中在至少两个所述半导体层序列(H1,H2)之间设置两个施主层(3)和一个金属氧化物层(5),其中一个所述施主层(3)直接设置在一个所述半导体层序列(H1)上并且另一所述施主层(3)直接设置在另一所述半导体层序列(H2)上,并且其中所述金属氧化物层(5)直接设置在两个所述施主层(3)之间,所述施主层(3)和所述金属氧化物层(5)具有相同的材料,其中所述施主层(3)积聚有氧,使得所述施主层具有超化学计量份额的氧。
15.根据权利要求14所述的器件,
其中两个所述施主层(3)和所述金属氧化物层(5)分别由相同的透明导电材料成形。
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DE102015111040.7A DE102015111040A1 (de) | 2015-07-08 | 2015-07-08 | Verfahren zum Verbinden von zumindest zwei Komponenten |
DE102015111040.7 | 2015-07-08 | ||
PCT/EP2016/064454 WO2017005492A1 (de) | 2015-07-08 | 2016-06-22 | Verfahren zum verbinden von zumindest zwei komponenten |
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US (1) | US20180190610A1 (zh) |
JP (1) | JP6660965B2 (zh) |
CN (1) | CN107709272B (zh) |
DE (1) | DE102015111040A1 (zh) |
TW (1) | TWI607980B (zh) |
WO (1) | WO2017005492A1 (zh) |
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JP7360007B2 (ja) * | 2019-02-28 | 2023-10-12 | 日亜化学工業株式会社 | 発光装置の製造方法 |
KR102432233B1 (ko) * | 2019-12-13 | 2022-08-16 | 한국과학기술원 | 멤스 패키지 및 그 제조방법 |
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GB2231524A (en) * | 1989-02-15 | 1990-11-21 | English Electric Co Ltd | Metal and ceramic-substrate bonding |
WO2014129625A1 (ja) * | 2013-02-25 | 2014-08-28 | 京セラ株式会社 | 試料保持具 |
WO2015085991A1 (de) * | 2013-12-10 | 2015-06-18 | Rogers Germany Gmbh | Verfahren zum herstellen eines metall-keramik-substrates |
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JPS61222964A (ja) * | 1985-03-29 | 1986-10-03 | 三菱重工業株式会社 | セラミツクス/金属継手の製造法 |
KR0179164B1 (ko) * | 1995-09-25 | 1999-04-01 | 문정환 | 위상 반전 마스크의 제조방법 |
JP4184498B2 (ja) * | 1998-10-14 | 2008-11-19 | 株式会社アルバック | 亜鉛/インジウム系bm膜、及びbm膜製造方法 |
JP2000314975A (ja) * | 1999-04-30 | 2000-11-14 | Canon Inc | 電子写真感光体、プロセスカートリッジ及び電子写真装置 |
JP2001042553A (ja) * | 1999-08-04 | 2001-02-16 | Canon Inc | 電子写真感光体、プロセスカートリッジ及び電子写真装置 |
US7094301B2 (en) * | 2003-03-21 | 2006-08-22 | Air Products And Chemicals, Inc. | Method of forming a joint |
DE102007061479A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Überspannungsschutz |
US20100252103A1 (en) * | 2009-04-03 | 2010-10-07 | Chiu-Lin Yao | Photoelectronic element having a transparent adhesion structure and the manufacturing method thereof |
JP2011035158A (ja) * | 2009-07-31 | 2011-02-17 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP5946683B2 (ja) * | 2011-04-22 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2013041637A (ja) * | 2011-08-12 | 2013-02-28 | Hitachi Ltd | 熱アシスト磁気記録ヘッド及びその製造方法 |
WO2013080819A1 (ja) * | 2011-11-29 | 2013-06-06 | Tdk株式会社 | 液晶レンズ |
US9105561B2 (en) * | 2012-05-14 | 2015-08-11 | The Boeing Company | Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide |
US10043942B2 (en) * | 2013-10-17 | 2018-08-07 | Luminus Devices, Inc. | Vertical multi-junction light emitting diode |
FR3026403B1 (fr) * | 2014-09-30 | 2016-11-25 | Saint Gobain | Substrat muni d'un empilement a proprietes thermiques et a couche intermediaire sur stoechiometrique |
-
2015
- 2015-07-08 DE DE102015111040.7A patent/DE102015111040A1/de not_active Withdrawn
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2016
- 2016-06-22 CN CN201680038955.3A patent/CN107709272B/zh not_active Expired - Fee Related
- 2016-06-22 JP JP2017564377A patent/JP6660965B2/ja not_active Expired - Fee Related
- 2016-06-22 WO PCT/EP2016/064454 patent/WO2017005492A1/de active Application Filing
- 2016-06-22 US US15/740,785 patent/US20180190610A1/en not_active Abandoned
- 2016-06-29 TW TW105120486A patent/TWI607980B/zh not_active IP Right Cessation
Patent Citations (3)
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GB2231524A (en) * | 1989-02-15 | 1990-11-21 | English Electric Co Ltd | Metal and ceramic-substrate bonding |
WO2014129625A1 (ja) * | 2013-02-25 | 2014-08-28 | 京セラ株式会社 | 試料保持具 |
WO2015085991A1 (de) * | 2013-12-10 | 2015-06-18 | Rogers Germany Gmbh | Verfahren zum herstellen eines metall-keramik-substrates |
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TW201708163A (zh) | 2017-03-01 |
CN107709272A (zh) | 2018-02-16 |
TWI607980B (zh) | 2017-12-11 |
JP2018528599A (ja) | 2018-09-27 |
DE102015111040A1 (de) | 2017-01-12 |
WO2017005492A1 (de) | 2017-01-12 |
JP6660965B2 (ja) | 2020-03-11 |
US20180190610A1 (en) | 2018-07-05 |
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