TW201708163A - 用於連接至少二組件之方法 - Google Patents
用於連接至少二組件之方法 Download PDFInfo
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- TW201708163A TW201708163A TW105120486A TW105120486A TW201708163A TW 201708163 A TW201708163 A TW 201708163A TW 105120486 A TW105120486 A TW 105120486A TW 105120486 A TW105120486 A TW 105120486A TW 201708163 A TW201708163 A TW 201708163A
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- Prior art keywords
- layer
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- oxide
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 124
- 239000002184 metal Substances 0.000 claims abstract description 124
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 90
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 88
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 63
- 239000001301 oxygen Substances 0.000 claims abstract description 63
- 230000008018 melting Effects 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims description 54
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052718 tin Inorganic materials 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 14
- 229910001887 tin oxide Inorganic materials 0.000 claims description 14
- 229910003437 indium oxide Inorganic materials 0.000 claims description 10
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 11
- 230000005693 optoelectronics Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- UKGJZDSUJSPAJL-YPUOHESYSA-N (e)-n-[(1r)-1-[3,5-difluoro-4-(methanesulfonamido)phenyl]ethyl]-3-[2-propyl-6-(trifluoromethyl)pyridin-3-yl]prop-2-enamide Chemical compound CCCC1=NC(C(F)(F)F)=CC=C1\C=C\C(=O)N[C@H](C)C1=CC(F)=C(NS(C)(=O)=O)C(F)=C1 UKGJZDSUJSPAJL-YPUOHESYSA-N 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Abstract
本發明係關於一種用於連接至少二組件(1,2)的方法,其包含以下步驟:A)至少提供第一組件(1)及第二組件(2),B)將至少一個施體層(3)塗敷至該第一及/或該第二組件(1,2),其中該施體層(3)係富含氧(31),C)將金屬層(4)塗敷至該施體層(3)、該第一或該第二組件(1,2),D)至少將該金屬層(4)加熱至第一溫度(T1),使得該金屬層(4)得以熔化,並且該第一組件(1)及該第二組件(2)係彼此連接,以及E)將該配置加熱至第二溫度(T2),使得該氧(31)係由該施體層(3)傳遞到該金屬層(4),而該金屬層(4)係經轉換而形成穩定的金屬氧化物層(5),其中該金屬氧化物層(5)具有比該金屬層(4)更高的熔化溫度,其中該施體層(3)及該金屬氧化物層(5)將該第一組件(1)與該第二組件(2)彼此連接。
Description
本發明係關於一種用於連接至少二組件的方法。
到目前為止,已使用舉例如二氧化矽/二氧化矽直接接合法、黏著劑接合法及金屬性接合法等連接技術來將組件彼此連接。
本發明之一目的在於提供一種連接至少二組件的方法,在該二組件之間產生穩定的連接。
此目的是藉由一種如申請專利範圍獨立項第1項所述之用於連接至少二組件的方法來達成。本發明之有助益的組構及發展為附屬項之專利標的。
在至少一項具體實施例中,用於連接至少二組件的方法包含以下步驟;A)至少提供第一組件及第二組件,B)將至少一個施體層塗敷至該第一及/或該第二組件,其中該施體層係富含氧,
C)將金屬層塗敷至該施體層、該第一及/或該第二組件,D)至少將該金屬層加熱至第一溫度,使得該金屬層得以熔化,並且該第一組件及該第二組件係彼此連接,以及E)將該配置加熱至第二溫度,使得該氧係由該施體層傳遞到該金屬層,而該金屬層係經轉換而形成穩定的金屬氧化物層,其中該金屬氧化物層具有比該金屬層更高的熔化溫度,其中至少該施體層及該金屬氧化物層將該第一組件與該第二組件彼此連接。
特別的是,本方法係依字母順序A)至E)來實行。舉一替代方案或另外,可提供進一步的步驟;舉例來說,在步驟B)之前,可藉由佈植法將該氧引入該施體層以使該施體層中富含該氧。
根據至少一項具體實施例,本方法在步驟A)中提供第一及第二組件。
該第一組件及/或該第二組件可選自於各種數量之材料及元素。舉例來說,該第一及/或第二組件各可選自以下所組成之群組:藍寶石、氮化矽、半導體材料、陶瓷材料、金屬及玻璃。
舉替代方案或另外,該第一組件及/或該第二組件也可以是管路及/或管件。特別的是,該管路為真空管路。
舉例來說,該二組件其中一者可以是半導體或陶瓷晶圓,例如,由藍寶石、矽膠、鍺、氮化矽、氧
化鋁、發光陶瓷(舉例如YAG)所組成之塑形材料。此外,有可能形成至少一個組件作為印刷電路板(PCB),作為金屬性引線架或作為不同類型的連接載體。再者,該等組件其中至少一者舉例而言,可包含電子晶片、光電晶片、發光二極體、雷射晶片、光偵測器晶片或晶圓,或具有複數個此類晶片。特別的是,該第二組件及/或該第一組件包含發光二極體,簡稱LED。特別的是,該第二組件包含該發光二極體且該第一組件包含此等前述材料其中至少一者。
包含發光二極體之組件較佳係設計成放射藍光、紅光、綠光或白光。
該發光二極體包含至少一個光電半導體晶片。該光電半導體晶片可包含半導體層序列。該半導體晶片之該半導體層序列較佳是以III-V族化合物半導體材料為主。該半導體材料較佳為氮化物化合物半導體材料,例如:AlnIn1-n-mGamN,或者為磷化物化合物半導體材料,例如:AlnIn1-n-mGamP,適用於0n1、0m1及n+m1之各情況。類似的是,該半導體材料可以是AlxGa1-xAs,其中0x1。在這種情況下,該半導體層可包含摻質及附加組成物。然而,為了簡化,僅指明該半導體層序列之晶格的主要組成物,即Al、As、Ga、In、N或P,即使這些組成物可由少量其他物質來部分取代及/或補充亦然。
該半導體層序列含有主動層,具有至少一個pn接面及/或具有一個或複數個量子井結構。在該LED或該半導體晶片之運作期間,該主動層中產生電磁輻射。
該輻射的波長或波長最大值較佳為落於紫外線及/或可見光及/或紅外線光譜範圍內,尤其是介於420nm與800nm之間(包含420nm與800nm)的波長,例如,介於440nm與480nm之間(包含440nm與480nm)。
根據至少一項具體實施例,本方法包含步驟B),將至少一個施體層塗敷至該第一及/或該第二組件。特別的是,該施體層為富含氧的層件。
根據至少一項具體實施例,該施體層包含或由至少一種金屬之氧化物所組成。特別的是,該施體層包含或由氧化銦錫、氧化銦、氧化鋅及/或氧化錫所組成。特別的是,該氧化銦錫、氧化銦、氧化鋅或氧化錫係富含氧。
在這裡及下文中,該施體層富含著氧的這個事實意指該施體層具有超計量比例的氧。該氧可在該施體層中共價鍵結於該施體層之材料。舉替代方案或另外,該氧可併入該施體層,尤其是併入該施體層之該主晶格的格隙。換句話說,該氧從而未共價鍵結至該施體層。
根據至少一項具體實施例,本方法包含步驟C),將金屬層塗敷至該施體層。舉替代方案或另外,該金屬層係塗敷至該第一及/或該第二組件。
特別的是,該施體層包含金屬氧化物,舉例如氧化鋅、氧化錫、氧化鎘、氧化鈦、氧化銦或混合金屬氧化物,例如:氧化銦錫(ITO)。「金屬氧化物」一詞含括舉例如ZnO、SnO2或In2O3等二元金屬-氧化合物、以及
舉例如Zn2SnO4、CdSnO3、ZnSnO3、MgIn2O4、GaInO3、Zn2In2O5或In4Sn3O12或不同氧化物之混合物等三元金屬-氧化合物。在這種情況下,此等金屬氧化物可能不必然具有化學計量組成。特別的是,該施體層是由氧化銦錫(ITO)所形成。
根據至少一項具體實施例,該金屬層包含銦、錫、鋅或銦與錫之組合。
根據至少一項具體實施例,本方法包含步驟D),至少將一個金屬層加熱至第一溫度T1,使得該金屬層得以熔化,並且該第一組件及該第二組件係彼此連接。換句話說,該第一溫度升高到超過該金屬層之該金屬或此等金屬混合物的熔化溫度,該金屬層之該等金屬因而熔化。舉例來說,銦具有156.6℃之熔化溫度。錫具有231.9℃之熔化溫度。該金屬層亦可包含或由複數種金屬所組成。特別的是,該金屬層包含銦與錫的組合。特別的是,銦與錫形成共晶混合物。重量百分比52%之銦與重量百分比48%之錫的混合物具有117℃至118℃之熔化溫度。透過該金屬層之熔化,該金屬層表現像是金屬性焊接材料。
特別的是,該金屬層呈現延性(ductile)行為。該金屬層將該第一與該第二組件彼此連接。舉例來說,該連接可以是介於該第一組件與該第二組件之間的機械連接。再者,該第一組件與該第二組件亦可經由該金屬層電連接。特別的是,該金屬層與該施體層、或該金屬氧化物層與該施體層形成將該第一組件連接至該第二組件的連接元件。特別的是,該連接元件係配置成與該第一組件且亦
與該第二組件直接機械及/或電接觸。
根據至少一項具體實施例,本方法包含步驟E),將該配置加熱至第二溫度,使得該氧係由該施體層傳遞到該金屬層,而該金屬層係經轉換而形成穩定的金屬氧化物層。特別的是,該金屬氧化物層具有比該金屬層更高的熔化溫度。在這種情況下,至少該施體層及該金屬氧化物層將該第一組件連接至該第二組件,反之亦然。
換句話說,穩定的機械連接及(另外若恰當的話)電連接係經由該施體層及該金屬氧化物層藉由這二組件的連接所產生。
根據至少一項具體實施例,步驟E)中之該第二溫度大於步驟D)中之該第一溫度。特別的是,該第一與該第二溫差彼此相差的倍數為至少1.5;1.8;1.9;2;2.5或3。藉由將尤其包含該金屬層、該第一組件、該第二組件及該施體層之配置加熱至第二溫度,過量的氧係由該施體層傳遞到該金屬層。該金屬層經受氧化作用或自氧化作用(autooxidation)而形成該金屬氧化物層。該金屬層係轉換成固體金屬氧化物層。特別的是,該金屬氧化物層為機械穩定。該金屬氧化物層比該金屬層具有更高的熔化溫度或更高的再熔溫度。該金屬氧化物層係由該金屬層及該施體層中存在的氧所產生。因此,不一定要供應其它外部反應伴子才能產生穩定連接。
根據至少一項具體實施例,該金屬層包含銦、鋅、錫或銦與錫之組合。在以銦作為該金屬層的情況
下,係形成氧化銦作為該金屬氧化物層。在以錫作為該金屬層的情況下,係形成氧化錫作為該金屬氧化物層。在以鋅作為該金屬層的情況下,係形成氧化鋅作為該金屬氧化物層。在以銦與錫混合物作為該金屬層的情況下,係形成氧化銦錫作為該金屬氧化物層。
舉替代方案或另外,該施體層可由氧化銦、氧化錫或氧化銦錫所組成。特別的是,該施體層是由氧化銦錫所形成。氧化銦錫的優點在於透明與導電。可見光波長範圍內的光吸收度因而低。另外,尤其是對於光電半導體組件而言,有足以產生此等組件的熱與機械穩定性。
該金屬氧化物層具有相較於該金屬層更高的熔點,而且若恰當,具有透明性。舉例來說,由銦所組成之該金屬層具有156.9℃之熔點,而由氧化銦(In2O3)所組成之該金屬氧化物層具有1910℃之更高熔點。舉例來說,由錫所組成之該金屬層具有231.9℃之熔點,而由氧化錫所組成之該金屬氧化物層具有1630℃之更高熔點。舉例來說,由銦所組成之該金屬層具有118℃之熔點,而由氧化銦錫(ITO)所組成之該金屬氧化物層具有大約1900℃之更高熔點。
本方法類似於常在半導體產業中使用的鍵結製程,其中該連接係由等溫固化反應作用所形成。然而,顯著差異在於該金屬氧化物層不是藉由使複數種合金元素混合並反應所形成,而是藉由該金屬層與出自該施體層之該氧的氧化作用所形成。這樣產生熔點夠高的連接元件,
舉例而言,適用於製造光電半導體組件。
本案發明人已認為透過本文所提出的結合方法,可藉由氧化作用將非透明連接元件轉換成陶瓷並且還可能轉換成傳導與透明層。此連接元件特別包含該施體層及該金屬氧化物層,具有與該第一與第二組件有關的高連接力或黏著力。該連接元件可具有良好的光學特性,例如:對於可見光>80%或90%的高透明度。再者,該連接元件可另外具有諸如高導電率等電氣特性。
根據至少一項具體實施例,該施體層及該金屬氧化物層在步驟D)之後包含相同的金屬氧化物。另外,該施體層與該金屬氧化物層的差異可僅在於氧的比例。
根據至少一項具體實施例,該施體層及該金屬層是藉由濺鍍來塗敷。舉替代方案或另外,該金屬氧化物層可藉由該金屬層的氧化作用來產生。或者,可使用熱蒸鍍,而不是使用濺鍍。
根據至少一項具體實施例,該施體層係藉由在步驟B)中濺鍍至少一種金屬及氧來產生以形成金屬氧化物。該金屬層係例如在相同系統中,藉由濺鍍至少一種金屬來產生。特別的是,該金屬層之金屬對應於該施體層之該金屬氧化物之金屬。
根據至少一項具體實施例,該氧係於步驟B)中引進。特別的是,連續或不連續氧流是以速度k1及/或比例n1起作用進到該施體層以引進該氧。特別的是,步驟C)中的氧具有速率k2<k1及/或比例n2<n1,使得該金屬
層得以產生。換句話說,係塗敷諸如錫之金屬以及氧作為氧化錫,舉例而言,用來產生該施體層。氧流可持續流動而形成該氧化錫。隨著本方法繼續進行,可降低氧的比例,使得錫以金屬形式沉積而未形成氧化錫。該金屬層因此形成。接著,在方法步驟D)中,該金屬層可熔化且這二組件可連接。在第二溫度下執行後續加熱步驟時,該氧可接著由該富含氧之施體層傳遞到該金屬層,從而形成諸如氧化錫之金屬氧化物,如隨著該金屬層之舉例如錫的金屬源出的該金屬氧化物層。換句話說,除了氧外,這裡不需要進一步反應伴子便可形成穩定的連接元件。
根據至少一項具體實施例,該金屬層及該施體層各具有10nm至200nm的層厚,尤其是介於40nm與120nm之間,例如60nm。該金屬氧化物層可具有10nm至200nm的層厚,尤其是介於40nm與120nm之間,例如60nm。
根據至少一項具體實施例,該第一溫度係選自於25℃至250℃的溫度範圍,尤其是介於120℃與240℃之間,例如170℃。該第二溫度尤其具有比該第一溫度更高的溫度。特別的是,該第二溫度高於200℃,例如230℃。
根據至少一項具體實施例,該施體層之該氧是在步驟B)之後,藉由離子佈植法引入該施體層。該離子佈植法對於所屬技術領域中具有通常知識者為已知,因而不在此詳細說明。
或者,該施體層之該氧可在步驟B)期間,藉由氧流引入該施體層。
兩方法都能以超計量比率將該氧引入該施體層。特別的是,該施體層是由氧化銦錫所形成,因此,引進氧之後,出現具有超計量比例之氧的氧化銦錫。該氧尤其是引入宿主晶體的格隙或細孔。
根據至少一項具體實施例,該第一與該第二組件是在壓力下連接。特別的是,該壓力為至少1.8巴,例如2巴。
透過這裡所提出的方法,舉例而言,光電半導體組件有可能直接彼此連接。本方法舉例而言,可取代直接鍵結。直接鍵結的顯著挑戰為對於表面有高要求。這些表面必須幾乎沒有粒子且非常平滑。另外,此等組件僅可呈現非常小的偏差度及較低的總厚度變異(TTV)。因此,舉例來說,尺寸為10nm的粒子導致尺寸大約為100μm的凹穴(空洞)。在這裡所提出的方法中,可將尺寸為10nm的粒子壓入並使其嵌入連接期間為液體的該金屬層,但不會產生凹穴。這樣會帶來對此等組件之表面品質要求低有關的主要優點,以及可導致良率更高,並且可減少程序步驟的數目。
此外,本發明指明結構元件。此結構元件尤其包含至少該二組件、該施體層及該金屬氧化物層。特別的是,該結構元件是由上述方法所產生,用來連接至少二組件。也就是說,對於本方法所揭示的特徵全都針對該
結構元件予以揭示,反之亦然。
根據至少一項具體實施例,該結構元件包含至少二組件、該等第一與第二組件。施體層及金屬氧化物層係配置於此二組件之間。該金屬氧化物層是藉由金屬層所產生。該施體層係富含氧。該氧係引入該施體層,用來使該金屬層起氧化作用而產生該金屬氧化物層。特別的是,該施體層及該金屬氧化物層包含相同材料。該施體層及該金屬層較佳是由氧化銦錫、氧化錫或氧化銦所形成。
根據至少一項具體實施例,該結構元件包含作為該第一及/或第二組件的光電半導體組件。特別的是,該光電半導體組件至少為III-V族化合物半導體材料,並且包含pn接面。
根據至少一項具體實施例,該結構元件包含至少兩個或精確地包含兩個各為了在相同或不同波長範圍內放射輻射而設計的半導體層序列。特別的是,在該結構元件運作期間,該至少兩個半導體層序列放射選自於藍色、紅色及綠色波長範圍的不同輻射。該半導體層序列包含至少一個p摻雜半導體層、至少一個n摻雜半導體層及具有pn接面之主動層。至少一個施體層(尤其是一個或兩個施體層)、以及金屬氧化物層係配置於這至少兩個半導體層序列之間。在2個施體層的情況下,一個施體層係直接配置於一個半導體層序列上,亦即與其直接機械接觸,而另一施體層係直接配置於另一半導體層序列上,亦即與其直接機械接觸。該金屬氧化物層係配置於這兩個施體層之
間,並且直接毗連該等第一及該第二施體層兩者。換句話說,該結構元件具有以下結構:半導體層序列-施體層-金屬氧化物層-施體層-半導體層序列。該結構元件因此可產生任何可能顏色的輻射。
另外,該結構元件中也可能出現超過兩個半導體層序列,例如三個、四個或五個。相鄰的半導體層序列接著是藉由兩個施體層及一金屬氧化物層彼上隔開。
根據至少一項具體實施例,該兩個施體層及該金屬氧化物層各由相同材料所形成,尤其是由諸如氧化銦錫之透明及/或傳導材料所形成。
搭配圖示並且經由下文所述的例示性具體實施例,進一步優點、有助益的具體實施例及開發將變為顯而易見。
1、2‧‧‧組件
3‧‧‧施體層
4‧‧‧金屬層
5‧‧‧金屬氧化物層
7‧‧‧切單
31‧‧‧氧
100‧‧‧結構元件
H1、H2、H3‧‧‧半導體層序列
W1、W2、W3‧‧‧生長基材
T1‧‧‧第一溫度
T2‧‧‧第二溫度
第1A至5C圖各展示根據一項具體實施例用於連接至少二組件之方法的示意側視圖。
在例示性具體實施例及圖示中,相同的元件、類似的元件或具有相同功效之元件各可設有相同的參考元件符號。彼此相關之所示元件及其尺寸比並未按照真實比例。反而,舉例如層件、組件、結構元件及區域等個別元件可以誇大尺寸展示而更便於說明及/或了解。
第1A及1B圖展示根據一項具體實施例用於連接或結合至少二組件之方法。第1A圖展示至少提供
第一組件1及第二組件2(步驟A))。施體層3尤其是以直接機械及/或電接觸的方式塗敷至第一組件1及/或第二組件2。施體層3尤其富含氧31。舉例來說,該施體層係由氧化銦錫所形成。該氧化銦錫中的氧31尤其是在混合氧化物氧化銦錫(ITO)之晶格的格隙中累積。特別的是,金屬層4係緊接施體層3之後配置。施體層3及金屬層4尤其是藉由出自相同系統的濺鍍來塗敷。特別的是,該金屬層包含與施體層3之金屬氧化物或混合金屬氧化物之金屬相同的金屬(步驟B)及C))。接著至少將金屬層4、或包含第一及/或第二組件、施體層3及金屬層4之整個配置加熱至第一溫度T1。特別的是,第一溫度T1高到使得金屬層4熔化,並且使第一組件1與第二組件2彼此連接。特別的是,此為機械及/或電連接(步驟D))。接著,可將此配置加熱至第二溫度T2,使得氧31由施體層3傳遞到金屬層4。金屬氧化物層5是透過氧化作用由包含金屬之金屬層4所形成。金屬氧化物層5尤其為機械穩定及/或透明。在這種情況下,金屬氧化物層5具有比金屬層4更高的熔化溫度。這樣在第一與第二組件1、2之間產生明顯的連接。
第1B圖展示此二組件彼此連接時的示意側視圖。在這種情況下,該配置包含第一組件1,接著為施體層3、接著為金屬氧化物層5、接著為第二組件2。舉一替代方案,施體層3亦可接在第二組件2之後配置。接著在施體層3之後配置金屬氧化物層5,進而在該金屬氧化物層之後配置第一組件1。
第2A及2B圖展示根據一項具體實施例之至少二組件1、2的連接。施體層3可塗敷至第一組件1。施體層3尤其富含氧31(圖未示)。金屬層4可塗敷至第二組件2。接著,可實行步驟D)及E)。這樣形成包含第一組件1、接著為施體層3、接著為金屬氧化物層5、接著為第二組件2之結構元件100。換句話說,金屬層4係藉由與該施體層中出現的氧31起氧化作用而轉換成金屬氧化物層5。
第3A至3B圖展示用於連接至少二組件1、2之方法。第3A圖展示組件1。或者,第3A圖展示第二組件2。組件1、2尤其是具有管件形狀。特別的是,此二組件1、2各為管路。施體層3係塗敷至各別組件1、2的截面區。接著,可塗敷金屬層4(第3B圖)。至少連接或結合兩條管路以便在這兩條管路之間產生固定連接(第3C圖)。
第4A及4B圖展示根據一項具體實施例用於連接至少二組件1、2的方法。特別的是,第二組件2包含光電半導體組件或LED。第4A及4B圖與第1A及2B圖的差別在於塗敷至第一組件1的第二組件2有兩個。舉替代方案或另外,塗敷至第一組件1的第二組件2可能超過兩個,反之亦然。富含氧31之施體層3可塗敷至第一組件1。接著塗敷金屬層4,然後塗敷第二組件2。第一與第二組件1、2是在步驟D)中彼此連接,金屬層4在該步驟中係加熱至第一溫度T1,以致超過熔化溫度。結果,金屬
層4呈熔融形式,並且可在該第一組件與各第二組件2之間產生連接。在以第二溫度T2進行進一步加熱步驟時,該金屬層可利用施體層3之氧31轉換成金屬氧化物層5。結果導致包含施體層3及金屬氧化物層5之連接元件,其在二組件1、2之間產生固定之機械及/或電連接。接著,位於公用之第一組件1上的第二組件2可進行切單7。舉例而言,這可藉由鋸切或雷射分離法來達成。
特別的是,還有可能在第一及/或第二組件1、2上配置III-V族半導體層。特別的是,接著形成第一及/或第二組件1、2作為生長基材。首先,由例如氧化銦錫之金屬氧化物所組成的施體層3可塗敷至此等III-V族半導體層的曝露面。
由氧化銦錫所組成的施體層3尤其包含超計量(superstoichiometric)比例之氧。特別的是,施體層3係沉積成具有60nm的厚度。施體層3具有反應性;亦即,舉例而言,例如銦及錫的金屬粒子與氧起反應以形成諸如氧化銦錫之金屬氧化物。
施體層3是藉由濺鍍來塗敷,其中氧係添加至製程氣體。特別的是,用於濺鍍之靶材的組成為重量百分比90%的銦及重量百分比10%的錫。在進一步製程中,中斷對製程氣體添加氧而至少使得塗敷的施體層3增加厚度,尤其是銦錫層的厚度,其中出現的氧量則減少。特別的是,濺鍍持續進行,直到尤其是由銦與錫所組成的金屬層4在表面上出現為止。
金屬層4尤其具有4nm至8nm的厚度,例如5nm。接著,第一與第二組件1、2可彼此連接,尤其是連接。此連接尤其能以<200℃的第一溫度T1來實行,例如180℃。從室溫開始,亦即從25℃開始,將組件1、2加熱至用於連接的第一溫度T1。達到第一溫度T1後,將此等層件彼此加壓,尤其是以>1.8巴的壓力來加壓,例如2巴。可使組件1、2保持此狀態大約五分鐘。
接著,可將此溫度進一步升高到第二溫度T2,例如高達350℃。可在此溫度將此二組件1、2燒製一個小時。在此製程中,情況特別是,氧31由施體層3擴散到尤其是由銦錫所組成的金屬層4,並且將金屬層4之金屬轉換成金屬氧化物層5。
特別的是,金屬氧化物層5為陶瓷。舉替代方案或另外,金屬氧化物層5具有透光性。舉替代方案或另外,金屬氧化物層5具有導電性。該金屬氧化物層較佳是由氧化銦錫所組成。第一與第二組件1、2之間經由施體層3及金屬氧化物層5構成的連接因此具有大幅高於前述金屬層4的熔點。另外,相較於金屬層4,金屬氧化物層5可具有透明形式。
第5A至5C圖展示根據一項具體實施例用於連接或結合至少二半導體層序列H1、H2之方法。第1A圖展示至少提供第一組件1,其包含半導體層序列H1及例如由藍寶石所組成的生長基材W1。第1A圖更展示至少提供第二組件2,其包含半導體層序列H2及例如由藍寶石所
組成的生長基材W2。施體層3尤其是以直接機械及/或電接觸的方式塗敷至第一組件1及第二組件2兩者,並在各情況中接著塗敷金屬層4。
然後將此二組件1、2連接,金屬層4係轉換成金屬氧化物層5(第5B圖)。這樣導致以下層件結構:生長基材W2-半導體層序列H2-施體層3-金屬氧化物層5-施體層3-半導體層序列H1-生長基材W1。
半導體層序列H1、H2尤其是直接毗連各別施體層3。
接著,如第5C圖中所示,可移除第一組件1的生長基材W1,並且可將施體層3及金屬層4塗敷至半導體層序列H1。第5A圖的步驟可接著依其他組件的需要而重複進行,例如第一、第二或第三組件3,這會導致包含例如三個半導體層序列H1、H2、H3的結構元件,在各情況中,相鄰的半導體層序列彼此是藉由至少一個施體層3(尤其是兩個施體層3)、以及金屬氧化物層5來隔開。特別的是,半導體層序列H1、H2、H3放射不同波長的輻射,例如出自紅色、黃色及藍色波長範圍的輻射,使得結構元件100的總放射可以在可見光範圍內具有任何波長,例如白色混合光。特別的是,各別施體層3及金屬氧化物層5是由氧化銦錫所形成。所放射輻射的吸收損耗能從而降低。
搭配圖示所述的例示性具體實施例及其特徵也可根據進一步例示性具體實施例互相組合,即使此類
組合未在圖示中明確展示亦然。再者,搭配圖示所述的例示性具體實施例可根據一般部分中的說明而具有附加或替代特徵。
本發明不因基於例示性具體實施例的說明而受限於該等例示性具體實施例。反而本發明含括任何新穎特徵,還含括任何特徵組合,其尤其包括本專利申請專利範圍中的任何特徵組合,即使此特徵或其本身的這種組合未在本專利申請專利範圍或例示性具體實施例中明確指明亦然。
本專利申請案主張德國專利申請案102015111040.7的優先權,其揭露內容係合併於本文中作為參考。
1、2‧‧‧組件
3‧‧‧施體層
5‧‧‧金屬氧化物層
Claims (15)
- 一種用於連接至少二組件(1,2)的方法,係包含以下步驟:A)至少提供第一組件(1)及第二組件(2),B)將至少一個施體層(3)塗敷至該第一及/或該第二組件(1,2),其中該施體層(3)係富含氧(31),C)將金屬層(4)塗敷至該施體層(3)、該第一或該第二組件(1,2),D)至少將該金屬層(4)加熱至第一溫度(T1),使得該金屬層(4)得以熔化,並且該第一組件(1)及該第二組件(2)係彼此連接,以及E)將該配置加熱至第二溫度(T2),使得該氧(31)係由該施體層(3)傳遞到該金屬層(4),而該金屬層(4)係經轉換而形成穩定的金屬氧化物層(5),其中該金屬氧化物層(5)具有比該金屬層(4)更高的熔化溫度,其中該施體層(3)及該金屬氧化物層(5)將該第一組件(1)與該第二組件(2)彼此連接。
- 如申請專利範圍第1項所述之方法,其中,該施體層(3)係由氧化銦錫、氧化銦、氧化鋅或氧化錫所組成,其中該氧化銦錫、該氧化銦或該氧化錫係富含氧(31)。
- 如申請專利範圍第1項或第2項所述之方法,其中,該金屬層(4)包含銦、錫、鋅或銦與錫之組合,其中,在以銦作為該金屬層(4)的情況下,係形成 氧化銦作為該金屬氧化物層(5),其中,在以錫作為該金屬層(4)的情況下,係形成氧化錫作為該金屬氧化物層(5),其中,在以鋅作為該金屬層(4)的情況下,係形成氧化鋅作為該金屬氧化物層(5),以及其中,在以銦與錫之混合物作為該金屬層(4)的情況下,係形成氧化銦錫作為該金屬氧化物層(5)。
- 如申請專利範圍第1項至第3項中任一項所述之方法,其中,該施體層(3)包含至少一種金屬之氧化物。
- 如申請專利範圍第1項至第4項中任一項所述之方法,其中,該施體層(3)及該金屬氧化物層(5)在步驟D)之後包含相同的金屬氧化物。
- 如申請專利範圍第1項至第5項中任一項所述之方法,其中,該施體層(3)及該金屬層係藉由濺鍍來產生,而該金屬氧化物層(5)係藉由該金屬層(4)的氧化作用來產生。
- 如申請專利範圍第6項所述之方法,其中,該施體層(3)係藉由在步驟B)中濺鍍至少一種金屬及氧來產生以形成金屬氧化物,其中,該金屬層(4)係藉由在相同系統中濺鍍至少一種金屬來產生,其中,該金屬層(4)之該金屬對應於該施體層(3)之該金屬氧化物之該金屬。
- 如申請專利範圍第7項所述之方法,其中,在步驟B)中,以速率k1及比例n1將連續 氧流(6)引入該施體層(3)以引進該氧(31),其中,步驟C)中之該氧流(6)具有速率k2<k1及比例n2<n1,使得該金屬層(4)得以產生。
- 如申請專利範圍第1項至第8項中任一項所述之方法,其中,該第二組件(2)包含發光二極體,以及其中,該第一組件(1)至少係由以下組成之群組所選出:藍寶石、氮化矽、半導體材料、陶瓷材料、金屬及玻璃。
- 如申請專利範圍第1項至第9項中任一項所述之方法,其中,該第一組件(1)及/或該第二組件(2)為管路及/或管件。
- 如申請專利範圍第1項至第10項中任一項所述之方法,其中,步驟E)中之該第二溫度(T2)大於步驟D)中之該第一溫度(T1),以及該第一與該第二溫度(T1,T2)彼此相差至少1.5倍。
- 如申請專利範圍第1項至第11項中任一項所述之方法,其中,該施體層(3)之該氧(31)係藉由離子佈植法在步驟B)之後引入該施體層(3),或其中,該施體層(3)之該氧(31)係藉由氧流(6)在步驟B)期間引入該施體層(3)。
- 如申請專利範圍第1項至第12項中任一項所述之方法,其中,該第一與該第二組件(1,2)係在至少1.8巴之壓力下連接。
- 一種結構元件,係包含各設計成在相同或不同波長範圍內放射輻射之至少兩個半導體層序列(H1,H2),其中至 少一個或兩個施體層(3)及金屬氧化物層(5)係配置於該至少兩個半導體層序列(H1,H2)之間,其中,在兩個施體層的情況下,一個施體層(3)係直接配置於一個半導體層序列(H1)上,而另一施體層(3)係直接配置於另一半導體層序列(H2)上,以及其中,該金屬氧化物層(5)係直接配置於該兩個施體層(3)之間。
- 如申請專利範圍第14項所述之結構元件,其中,該兩個施體層(3)及該金屬氧化物層(5)係各由相同的透明傳導材料所形成。
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JPS61222964A (ja) * | 1985-03-29 | 1986-10-03 | 三菱重工業株式会社 | セラミツクス/金属継手の製造法 |
GB8903425D0 (en) * | 1989-02-15 | 1989-04-05 | English Electric Co Ltd | Metal-ceramic-substrate bonding |
KR0179164B1 (ko) * | 1995-09-25 | 1999-04-01 | 문정환 | 위상 반전 마스크의 제조방법 |
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JP2000314975A (ja) * | 1999-04-30 | 2000-11-14 | Canon Inc | 電子写真感光体、プロセスカートリッジ及び電子写真装置 |
JP2001042553A (ja) * | 1999-08-04 | 2001-02-16 | Canon Inc | 電子写真感光体、プロセスカートリッジ及び電子写真装置 |
US7094301B2 (en) * | 2003-03-21 | 2006-08-22 | Air Products And Chemicals, Inc. | Method of forming a joint |
DE102007061479A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Überspannungsschutz |
US20100252103A1 (en) * | 2009-04-03 | 2010-10-07 | Chiu-Lin Yao | Photoelectronic element having a transparent adhesion structure and the manufacturing method thereof |
JP2011035158A (ja) * | 2009-07-31 | 2011-02-17 | Renesas Electronics Corp | 半導体装置の製造方法 |
US8797788B2 (en) * | 2011-04-22 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2013041637A (ja) * | 2011-08-12 | 2013-02-28 | Hitachi Ltd | 熱アシスト磁気記録ヘッド及びその製造方法 |
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US9105561B2 (en) * | 2012-05-14 | 2015-08-11 | The Boeing Company | Layered bonded structures formed from reactive bonding of zinc metal and zinc peroxide |
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US10043942B2 (en) * | 2013-10-17 | 2018-08-07 | Luminus Devices, Inc. | Vertical multi-junction light emitting diode |
DE102013113734B4 (de) * | 2013-12-10 | 2018-03-08 | Rogers Germany Gmbh | Verfahren zum Herstellen eines Metall-Keramik-Substrates |
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CN107709272B (zh) | 2021-04-16 |
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