TWI401825B - 發光二極體晶片的固晶方法及固晶完成之發光二極體 - Google Patents

發光二極體晶片的固晶方法及固晶完成之發光二極體 Download PDF

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TWI401825B
TWI401825B TW098140702A TW98140702A TWI401825B TW I401825 B TWI401825 B TW I401825B TW 098140702 A TW098140702 A TW 098140702A TW 98140702 A TW98140702 A TW 98140702A TW I401825 B TWI401825 B TW I401825B
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Taiwan
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layer
metal
intermetallic
film layer
thin film
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TW098140702A
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English (en)
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TW201119079A (en
Inventor
Hsiu Jen Lin
Jian Shian Lin
Shau Yi Chen
Chieh Lung Lai
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Ind Tech Res Inst
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Priority to TW098140702A priority Critical patent/TWI401825B/zh
Priority to US12/854,278 priority patent/US8236687B2/en
Priority to EP10172857.4A priority patent/EP2328192A3/en
Priority to JP2010181719A priority patent/JP5415378B2/ja
Priority to KR1020100080822A priority patent/KR101138306B1/ko
Publication of TW201119079A publication Critical patent/TW201119079A/zh
Priority to US13/530,396 priority patent/US8716737B2/en
Application granted granted Critical
Publication of TWI401825B publication Critical patent/TWI401825B/zh

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Description

發光二極體晶片的固晶方法及固晶完成之發光二極體
本發明係關於一種發光二極體晶片的固晶方法及發光二極體，特別是一種能低溫固晶並得到耐高溫的介金屬層的固晶方法及具有此固晶結構的發光二極體。
將發光二極體(LED,Light Emitting Diode)晶片黏著於導線架上之技術已發展多年，依固晶材質的不同，大致上分為二類。第一類為高分子導電膠材，第二類為金屬銲接材料。
前述第一類可見於台灣公告第463394號專利「晶片式發光二極體及其製造方法」。其主要係於一金屬基板表面鍍銀，經蝕刻後形成複數的線架，該線架於一端黏晶，並透過打線連接至相對另端，經進行封膠後並進行切割即構成一晶片式發光二極體，其裸露於底部的線架即構成電氣接點。此種做法，若在接合過程中未能均勻塗膠，將使得晶粒無法被固定在預定的位置，進而影響發光效率。其次，此類固晶方式，由於此高分子材料耐熱性極差，在高溫環境下操作時，銀膠接合層將較易劣化。再者，此高分子材料導熱不佳，LED晶粒也將因其難以導熱(銀膠熱導係數僅1W/M-K)而無法得到良好的散熱效果。LED晶粒的壽命與光電較換效率亦隨之下降。
前述第二類可見於台灣公開第200840079號專利申請案「發光二極體封裝之固晶材料與方法」。該專利申請案所採用的固晶方 法主要是利用基板的金屬材質而採用共晶接合。在封裝結構的金屬基座的上表面首先塗佈一層適當範圍的共晶接著材料。接著，將發光二極體晶粒設置於基座的共晶接著材料上。完成的成品再經由熱板、烤箱或隧道爐提供適當溫度而完成共晶接合。此技術採用共晶接著材料，其所形成的接合層為金屬材料，故在散熱性及耐熱性都較銀膠為佳。此專利技術所採用的部分共晶接著材料的熔點較高，使得在接合時容易在LED晶粒殘留熱應力，而損壞晶粒。而另一部分的共晶接著材料雖為低熔點合金，此類接著材料在接合完成後，若LED使用於70-80度C的環境時，接合層將產生軟化現象，其接點可靠度大打折扣。
除了上述技術外，美國公開第2007/0141749號專利申請案提出了在固晶製程中，導入超音波，以超音波使接合表面離子化，藉以降低加熱溫度，減少熱應力。此方式的需增加超音波設備，製造成本提昇，同時，若超音波動操作不當，可能直接震動到LED晶粒，造成晶粒裂片。
基於上述問題，本發明提出一種發光二極體晶片的固晶方法及應用此固晶方法的發光二極體，本發明的固晶方法可以在110度的低溫下完成固晶，並使固晶完成的接合合金具有高於200度的熔點，因此，得以解決上述各種方法的缺點及問題。
依據發光二極體(LED)晶片的固晶方法的一實施例，此固晶方法適於結合LED晶片及基體。LED晶片具有第一金屬薄膜層，固 晶方法包含：形成第二金屬薄膜層於基體的表面；形成固晶材料層於第二金屬薄膜層，固晶材料的熔點低於攝氏110度；置放LED晶片於固晶材料層上，使第一金屬薄膜層接觸固晶材料；以一液固反應溫度加熱固晶材料層一預固時間，以分別於第一金屬薄膜層、固晶材料層及第二金薄膜層之間形成第一介金屬層及第二介金屬層；以及以一固固反應溫度加熱固晶材料層一固化時間，以進行一固固反應，固固反應後之第一介金屬層及第二介金屬層之熔點高於200度C。
依據一實施例，前述的液固反應溫度係等於或高於該固晶材料熔點。固固反應溫度係低於該固晶材料熔點。前述第一金屬薄膜層之材料及第二金屬薄膜層之材料可為金(Au)、銀(Ag)、銅(Cu)或鎳(Ni)。固晶材料層之材料可為鉍銦、鉍銦鋅、鉍銦錫及鉍銦錫鋅。第一介金屬層及第二介金屬層之材料可選自於由銅銦錫(Cu-In-Sn)介金屬、鎳銦錫(Ni-In-Sn)介金屬、鎳鉍(Ni-Bi)介金屬、金銦(Au-In)介金屬、銀銦(Ag-In)介金屬、銀錫(Ag-Sn)介金屬及金鉍(Au-Bi)介金屬所構成的群組。
依據發光二極體的一實施例，發光二極體包含依序疊置的基體、第二金屬薄膜層、第二介金屬層、第一介金屬層、第一金屬薄膜層及發光二極體晶片。第一金屬薄膜層之材料及第二金屬薄膜層之材料可為金(Au)、銀(Ag)、銅(Cu)或鎳(Ni)。介金屬層的材質可以銅銦錫(Cu-In-Sn)、鎳銦錫(Ni-In-Sn)、鎳鉍(Ni-Bi)、金銦(Au-In)、銀銦(Ag-In)、銀錫(Ag-Sn)或金鉍(Au-Bi)介金屬。
依據上述固晶方法之實施例，可以將LED晶片在低於110度C的溫度先行預固化(液固反應)約0.1至1秒。其後，再於低於80度C的溫度進行約30分鐘到3小時的固固反應，以完成將LED晶片及基體固晶之程序。由於所有固晶程序均在低溫下進行，故無熱應力產生於LED晶片中。其次，藉此固晶方法完成的發光二極體，在LED晶片與基體間的接合材質為金屬材質，其導熱與散熱效果佳。再者，因所生成之介金屬化合物具有高於200度C的熔點溫度，因此，此發光二極體即便工作在70到80度C的環境下，亦不致會有接合合金軟化的問題。
有關本發明的特徵與實作，茲配合圖示及實施例說明如下。
首先，請參閱「第1圖」、「第2A圖」及「第2B圖」。「第1圖」為依據本發明之發光二極體(LED)晶片的固晶方法一實施例的流程示意圖。「第2A圖」為依據本發明之固晶方法一實施例之LED晶片之結構示意圖。「第2B圖」為依據本發明之固晶方法一實施例之基體之結構示意圖。
此LED晶片的固晶方法適於結合LED晶片10及基體20。LED晶片10可以是具有p-i-n結構之LED，例如但不限於氮化鎵(GaN)、氮化鎵銦(GaInN)、磷化鋁銦鎵(AlInGaP)與氮化鋁銦鎵(AlInGaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵銦砷(GaInAsN)、磷氮化鎵銦(GaInPN)或其組合。
LED晶片10所發出之光線的光譜可以是任何可見光光譜(380nm(奈米)到760nm)，或其他光譜。LED晶片10型態可為水平式結構(Saphhire base)、垂直式結構(Thin-GaN LED)與覆晶(Flip-Chip)型態。
LED晶片10具有第一金屬薄膜層12。第一金屬薄膜層12的材料可以是金、銀、銅與鎳。第一金屬薄膜層12可藉由電鍍、濺鍍或蒸鍍等方式鍍於LED晶片10的表面。第一金屬薄膜層12的厚度可以是但不限於0.2um(微米)到2.0微米。例如厚度為0.5um(微米)到1.0微米。
前述具有第一金屬薄膜層12的LED晶片10通常並非是直接在切割好的晶片上鍍第一金屬薄膜層12，而是先在LED晶圓背面，以上述電鍍等方式鍍上第一金屬薄膜層12後，接著再將晶圓經過切割、分光等步驟而完成的。
前述的基體20可以是導線架、印刷電路板、具有塑膠反射杯的基材、或陶瓷基板。基體20的材質可以是銅(Cu)、鋁(Al)、鐵(Fe)、鎳(Ni)之純元素或添加少量其它元素之合金。基體20的材質亦可以是矽(Si)、氮化鋁(AlN)或低溫共燒多層陶瓷(LTCC,Low-Temperature Cofired Ceramics)。
關於LED晶片10的固晶方法請再參照「第1圖」並搭配「第2B圖」、「第2C圖」、「第2D圖」、「第2E圖」、「第2F圖」、閱覽之。從圖中可以見悉，LED晶片10固晶方法包含：
步驟S50：形成第二金屬薄膜層22於基體20的表面；(請見於「第2B圖」)
步驟S52：形成固晶材料層30於第二金屬薄膜層22，固晶材料層30的熔點低於攝氏100度；(請見於「第2C圖」)
步驟S54：置放LED晶片10於固晶材料層30上，使第一金屬薄膜層12接觸固晶材料層30；(請見於「第2D圖」)
步驟S56：以一液固反應溫度加熱固晶材料層30一預固時間，以分別於第一金屬薄膜層12、固晶材料層30及第二金薄膜層22之間形成第一介金屬層32及第二介金屬層34；以及(請見於「第2E圖」)
步驟S58：以一固固反應溫度加熱固晶材料層30一固化時間，以進行一固固反應，固固反應後之第一介金屬層32’及第二介金屬層34’之熔點高於200度C(請見於「第2F圖」)。
關於步驟S50，請見於「第2B圖」。其中，第二金屬薄膜層22係可採用電鍍、濺鍍或蒸鍍等製程而被形成於基體20上。第二金屬薄膜層22的材料可以是金(Au)、銀(Ag)、銅(Cu)或鎳(Ni)。第二金屬薄膜層22的厚度可以是但不限於0.2um(微米)到2.0um。例如厚度為0.5um到1.0um。
接續步驟S50之後，請參見「第2C圖」，步驟S52係可藉由電鍍、蒸鍍或濺鍍的方式於第二金屬薄膜層22上形成一固晶材料層30。此固晶材料層30的材質可以是鉍銦(Bi-In)、鉍銦錫(Bi-In-Sn)、鉍銦錫鋅(Bi-In-Sn-Zn)與鉍銦鋅(Bi-In-Zn)。其中，Bi-In(鉍銦)的熔點約為110度C、Bi-25In-18Sn(鉍銦錫)的熔點約為82度C，Bi-20In-30Sn-3Zn(鉍銦錫鋅)的熔點約為90度C，Bi-33In-0.5Zn(鉍銦鋅)的熔點約為110度C。固晶材料層30的厚度可以是但不限於0.2um(微米)到2.0um。例如厚度為0.5um到1.0um。
其次，請參考「第2D圖」。步驟S54係將LED晶片10置放於固晶材料層30上，並使第一金屬薄膜層12接觸固晶材料層30。即如「第2D圖」所示。
接著，則進行步驟S56之以一液固反應溫度加熱固晶材料層30一預固時間，以分別於第一金屬薄膜層12、固晶材料層30及第二金薄膜層22之間形成第一介金屬層32及第二介金屬層34(請見於「第2E圖」)。其中，此液固反應溫度可以是等於或高於固晶材料層30的熔化溫度。若固晶材料層30的材質為鉍銦錫，則液固反應溫度可以是82度C或以上。加熱的方式可以採用雷射加熱、熱風加熱、紅外線加熱、熱壓接合、或超音波輔助熱壓接合。
加熱的位置則可以是直接將環境溫度提高到液固反應溫度，亦可以直接加熱於固晶材料層30或直接加熱於基體20再熱傳導至固晶材料層30。例如但不限於以雷射直接加熱於基體20底部(即加熱於「第2E圖」示的基體20的下方)。
加熱的時間(預固時間)則可以是但不限於0.1秒到2秒，例如0.2秒到1秒。此加熱的時間可視液固反應情形而適當調整。加熱時間可以是當第一金屬薄膜層12、固晶材料層30及第二金薄膜層22之間各別形成了第一介金屬層32及第二介金屬層34時所花的時間。此被形成的第一介金屬層32及第二介金屬層34的厚度可以是在非常薄的狀態下即視為完成了步驟S56之動作。意即，只要在第一金屬薄膜層12、固晶材料層30及第二金薄膜層22之間有形成了第一介金屬層32及第二介金屬層34即具有接合的效果，即可停止步驟S56而繼續進行下一步驟(S58)。當然，若在製程中，增加預固時間，使更多的第一介金屬層32及第二介金屬層34被形成，亦屬可實施的方式。
步驟S56之加熱動作亦可稱為是預固程序。其目的在於將LED晶片10與基體20依當前的對位關係(Alignment)進行預先固定，俾利後續製程之進行。由於此預固程序之溫度可以是等於或略高於固晶材料層30之熔點，且預固的時間可以相當短，故前述對位關係將能有效被維持，且不會對LED晶片10產生有任何類似熱應力的影響。
關於所形成的第一介金屬層32及第二介金屬層34的材質係與第一金屬薄膜層12及第二金薄膜層22有關，請容後詳述。
最後，進行步驟S58之以一固固反應溫度加熱固晶材料層30一固化時間，以進行一固固反應。此固固反應溫度係可低於固晶材料層30之熔點，可以是但不限於40度到80度C。前述固化時間可以依固固反應溫度而調整。例如，當固固反應溫度較高時，固化時間可以較短。當固固反應溫度較低時，固化時間可以較長。固化時間可以是30分鐘到3小時。
固固反應之目的在於讓固晶材料層30之合金元素與第一金屬薄膜層12及第二金屬薄膜層22的元素相互擴散。固固反應時間 的決定可以是讓大部分的固晶材料層30中的合金元素完成擴散所需的時間。
步驟S58之執行，在實際應用階段，可以採用批次作業的方式進行。意即，集合完成了步驟S56的多個半成品，統一以熱風式、烤箱、紅外線加熱或熱板加熱方式進行步驟S58。
由於步驟S58的固固反應溫度低於固晶材料層30之熔點，故對於步驟S56已完成之對位關係，並不致會有影響。
步驟S58後所形成之發光二極體之結構，有幾種可能。第一種發光二極體之結構請見於「第2F圖」。從圖中可以見悉，發光二極體包含依序疊置的基體20、第二金屬薄膜層22、第二介金屬層34’、第一介金屬層32’、第一金屬薄膜層12以及LED晶片10。其中第一金屬薄膜層12及第二金屬薄膜層22之材料係選自於由金(Au)、銀(Ag)、銅(Cu)及鎳(Ni)所構成群組。前述二個介金屬層32’,34’的材質包含Cu-In-Sn(銅銦錫)介金屬(熔點至少400℃以上)、Ni-In-Sn(鎳銦錫)介金屬(熔點約700℃以上)、Ni-Bi(鎳鉍)介金屬(熔點至少400℃以上)、Au-In(金銦)介金屬(熔點至少400℃以上)、Ag-In(銀銦)介金屬(熔點至少250℃以上)、Ag-Sn(銀錫)介金屬(熔點至少450℃以上)與Au-Bi(金鉍)介金屬(熔點至少350℃以上)。
其次，必須說明的是在預固程序所形成的第一介金屬層32及第二介金屬層34(即「第2E圖」所示)與固固反應後的第一介金屬層32’及第二介金屬層34’的材質可能並不相同。在預固程序時，雖然液固反應溫度有達到固晶材料層30的熔點，但是由於步驟S56所執行的時間僅需在第一介金屬層32及第二介金屬層34形成後即可停止，因此，固晶材料層30中的部分合金元素並未產生擴散。舉例來說，通常固晶材料層30中若含有銦，則銦較容易在液固反應時先擴散而形成介金屬層。
以下茲列出三個例子顯示「第2E圖」所示的LED在固晶程序中步驟S54、S56到S58的第二金屬薄膜層22、第二介金屬層34’、第一介金屬層32’、及第一金屬薄膜層12的材質。
[「第2E圖」LED結構實施例一]
[「第2E圖」LED結構實施例二]
[「第2E圖」LED結構實施例三]
以前述「第2E圖」LED結構實施例一中的第一介金屬層32’與第二介金屬層34’之熔點均高於200度C以上。即便LED未來長時間被操作在80度C以上的溫度，接合介質亦無軟化之問題，而能持續維持製程中的對位關係，得到良好的出光效率。
關於步驟S58後所形成之發光二極體之另一種結構請見於「第2G圖」。從圖中可以見悉，發光二極體包含依序疊置的基體20、第二金屬薄膜層22、第二介金屬層34’、中介層36、第一介金屬層32’、第一金屬薄膜層12以及LED晶片10。中介層36之材質與固晶材料層30、第二介金屬層34’、及第一介金屬層32’之材質有關。若固晶材料層30的材質為鉍銦錫，則中介層36的材質即可能為錫(Sn)。也就是在固固反應後，固晶材料層30僅留下錫(Sn)。
由於錫(Sn)之熔點約為230度C，亦高於200度C，能夠達到上述不會於LED使用中軟化的目的。也就是說，固晶材料層30在經過固固反應之後，有可能會被反應而消失，也有可能會殘留而形成中介層36。
關於鉍銦錫與銀的結合狀態，請參閱「第3圖」。「第3圖」為依據本發明之固晶方法一實施例中的固晶材料層30與第一金屬薄膜層12接合的合金分析圖。此實驗係將Bi-25In-18Sn的鉍銦錫合金設置於銀板上，施以85度C的溫度一段時間後，再進行合金分析所得到的合金分析圖。圖中可以看出，鉍銦錫與銀板間形成了Ag2 In之接合層。藉此可以得知，本發明所使用之固晶材料層30可與銀在低溫形成接合層。
依據上述固晶方法之實施例及固晶後之LED結構可知，在固晶製程時，可以用低溫及相當短的時間將LED晶片10預固於基體20，且不致有對位偏移的問題。其後再用更低的溫度進行固固反應。反應後的第一介金屬層32’及第二介金屬層34’具有高熔點(大於200度C)。因此，固晶後之LED即便長時間被操作於80度以上的溫度時，仍不致使第一介金屬層32’及第二介金屬層34’軟化，進而影響其對位精確度。再者，由於製程中所使用的溫度均遠低於100度C，故在固晶過程，LED晶片10及其他零組件(如基體20、塑料反射杯等)不會有熱應力殘留或集中問題。得到具有良好可靠度的LED。最後，由於預固程序可採用雷射加熱方式進行，因此預固時間縮短相當多。再加上固固時間則可採批量作業。使得本固晶方法可以有相對於習知技術高出許多的產出(Throughput)。
雖然本發明以前述之較佳實施例揭露如上，然其並非用以限定本發明，任何熟習相像技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。
10．．．LED晶片
12．．．第一金屬薄膜層
20．．．基體
22．．．第二金屬薄膜層
30．．．固晶材料層
32,32’．．．第一介金屬層
34,34’．．．第二介金屬層
36．．．中介層
第1圖為依據本發明之發光二極體(LED)晶片的固晶方法一實施例的流程示意圖。
第2A圖為依據本發明之固晶方法一實施例之LED晶片之結構示意圖。
第2B圖為依據本發明之固晶方法一實施例之基體之結構示意圖。
第2C圖為依據本發明之固晶方法一實施例之進行步驟S52的基體的結構示意圖。
第2D圖為依據本發明之固晶方法一實施例之步驟S54之結構示意圖。
第2E圖為依據本發明之固晶方法一實施例之步驟S56之LED結構示意圖。
第2F圖為依據本發明之固晶方法一實施例之步驟S58之LED結構示意圖。
第2G圖為依據本發明之固晶方法一實施例之步驟S58之另一LED結構示意圖。
第3圖為依據本發明之固晶方法一實施例中的固晶材料層與第一金屬薄膜層接合的合金分析圖。

Claims (11)

  1. 一種發光二極體(LED)晶片的固晶方法，適於結合一LED晶片及一基體，該LED晶片具有一第一金屬薄膜層，該固晶方法包含：形成一第二金屬薄膜層於該基體的一表面；形成一固晶材料層於該第二金屬薄膜層，該固晶材料層的一熔點低於攝氏110度；置放該LED晶片於該固晶材料層上，使該第一金屬薄膜層接觸該固晶材料層；以一液固反應溫度加熱該固晶材料層一預固時間，以分別於該第一金屬薄膜層、該固晶材料層及該第二金薄膜層之間形成一第一介金屬層及一第二介金屬層；以及以一固固反應溫度加熱該固晶材料層一固化時間，以進行一固固反應，該固固反應後之該第一介金屬層及該第二介金屬層之一熔點高於200度C。
  2. 如請求項1所述之固晶方法，其中該液固反應溫度係等於或高於該固晶材料層之該熔點。
  3. 如請求項1所述之固晶方法，其中該固固反應溫度係低於該固晶材料層之該熔點。
  4. 如請求項1所述之固晶方法，其中該以該固固反應溫度加熱該固晶材料層，以進行該固固反應的步驟係為：以該固固反應溫度加熱該固晶材料層，以進行該固固反應，直到該固晶材料與 該第一金屬薄膜層及該第二金薄膜層的該固固反應完畢。
  5. 如請求項1所述之固晶方法，其中該第一金屬薄膜層之材料選自於由金、銀、銅及鎳所組成的群組，該第二金屬薄膜層之材料選自於由金、銀、銅及鎳所組成的群組。
  6. 如請求項5所述之固晶方法，其中該固晶材料層之材料選自於由鉍銦、鉍銦鋅、鉍銦錫及鉍銦錫鋅所組成的群組。
  7. 如請求項6所述之固晶方法，其中該液固反應溫度為攝氏85度，該預固時間為0.1秒到1秒。
  8. 如請求項6所述之固晶方法，其中該固固反應溫度為攝氏40度到80度，該固化時間為30分鐘到3小時。
  9. 如請求項6所述之固晶方法，其中該第一介金屬層及該第二介金屬層之材料係選自於由銅銦錫(Cu-In-Sn)介金屬、鎳銦錫(Ni-In-Sn)介金屬、鎳鉍(Ni-Bi)介金屬、金銦(Au-In)介金屬、銀銦(Ag-In)介金屬、銀錫(Ag-Sn)介金屬及金鉍(Au-Bi)介金屬所組成的群組。
  10. 一種發光二極體，包含：一基體；一第二金屬薄膜層，位於該基體上，該第二金屬薄膜層之材料係選自於金(Au)、銀(Ag)、銅(Cu)及鎳(Ni)所構成群組；一第二介金屬層，位於該第二金屬薄膜層上；一第一介金屬層，位於該第二介金屬層上；一第一金屬薄膜層，位於該第一介金屬層上，該第一金屬 薄膜層之材料係選自於金(Au)、銀(Ag)、銅(Cu)及鎳(Ni)所構成群組，該些介金屬層的材質係選自於由銅銦錫(Cu-In-Sn)介金屬、鎳銦錫(Ni-In-Sn)介金屬、鎳鉍(Ni-Bi)介金屬、金銦(Au-In)介金屬、銀銦(Ag-In)介金屬、銀錫(Ag-Sn)介金屬及金鉍(Au-Bi)介金屬所構成的群組；以及一發光二極體晶片，位於該第一金屬薄膜層上。
  11. 如請求項10所述之發光二極體，另包含：一中介層，被夾置於該第一介金屬層與該第二介金屬層之間，該中介層之材料係選自於由錫(Sn)、鉍(Bi)、銦(In)及鋅(Zn)所組成的群組。
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