JP2018018082A - 狭ベゼル平板表示装置 - Google Patents
狭ベゼル平板表示装置 Download PDFInfo
- Publication number
- JP2018018082A JP2018018082A JP2017145267A JP2017145267A JP2018018082A JP 2018018082 A JP2018018082 A JP 2018018082A JP 2017145267 A JP2017145267 A JP 2017145267A JP 2017145267 A JP2017145267 A JP 2017145267A JP 2018018082 A JP2018018082 A JP 2018018082A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- electrode
- gip
- tft
- pull
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 61
- 230000000903 blocking effect Effects 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- 238000005070 sampling Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- XBBRGUHRZBZMPP-UHFFFAOYSA-N 1,2,3-trichloro-4-(2,4,6-trichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=CC(Cl)=C1C1=CC=C(Cl)C(Cl)=C1Cl XBBRGUHRZBZMPP-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 2
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 1
- 102100040856 Dual specificity protein kinase CLK3 Human genes 0.000 description 1
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 1
- 101000749304 Homo sapiens Dual specificity protein kinase CLK3 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
- G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0262—The addressing of the pixel, in a display other than an active matrix LCD, involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependent on signals of two data electrodes
Abstract
【解決手段】本発明に係る狭いベゼルを有する表示装置は、基板、プルアップTFT及びブースト容量を含む。基板は、表示領域と非表示領域を備える。プルアップTFTは、非表示領域に配置され、第1ゲート電極、第1ソース電極及び第1ドレイン電極を備える。ブースト容量は、第1ゲート電極と第1ドレイン電極との間に配置される。ブースト容量は、第1ドレイン電極と重畳するものの、第1ソース電極とは重畳せず、第1ゲート電極と接続された光遮断層を含む。本発明は、薄膜トランジスタの下部に補助容量を形成することにより、ベゼル領域が占める大きさをさらに小さくすることができる。
【選択図】図10
Description
以下、図3及び4を参照して、本発明の第1の実施形態に係るGIP素子について説明する。図3は、オッドGIP回路またはイーブンGIP回路に含まれるGIP素子の1つの詳細構成を示す。
以下、図5及び6を参照して、本発明の第2実施形態に係るGIP素子について詳細に説明する。図5は、第2実施形態に係る、オッドGIP回路またはイーブンGIP回路に含まれたGIP素子の他の詳細構成を示す。図5のGIP素子は、図3と比較してCQキャパシタの接続構成のみが異なるだけで、残りの構成は同じである。したがって、図5のGIP素子は、図4において説明した動作手順を採用することができる。図5に示されたGIP素子の構成要素の内、図3と重複する部分については詳細な説明を省略する。図6は、第1実施形態と第2実施形態でおいてのQノード電位を比較するグラフである。
以下、図9及び10を参照して、本発明の第3実施形態について説明する。これまでに説明した第1及び第2実施形態は、GIP素子を構成する回路的な側面について説明した。以下においては、GIP素子を構成する回路を直接基板上に実現することにおいて、ベゼル領域をさらに減らすことができる構造について説明する。特に、第2実施形態において、ベゼル領域をさらに減らすことができる構造を中心に説明する。しかし、第3実施形態で提供するアイデアを第1実施形態にも同様に適用することができることは自明である。また、これまでは、ベゼル領域を極小化することをさらに容易にするようにイーブン/オッドに分け左/右側辺にGIPを配置した構造を中心に説明した。しかし、左側あるいは右側辺のいずれか1つにGIPを配置した構造においても、第3実施形態を適用することにより、ベゼル領域をさらに小さくすることができる。
Claims (5)
- 表示領域と非表示領域を備えた基板と、
前記非表示領域に配置され、第1ゲート電極、第1ソース電極、及び第1ドレイン電極を備えたプルアップTFTと、
前記第1ゲート電極と前記第1ソース電極との間に配置されたブースト容量と、
を含み、
前記ブースト容量は、前記第1ソース電極と重畳するものの、前記第1ドレイン電極とは重畳せず、前記第1ゲート電極と接続された光遮断層を含む、
平板表示装置。 - 前記光遮断層を覆うバッファ層と、
前記バッファ層の上で前記光遮断層と重畳するチャネル領域、前記チャネル領域の一側部から延長され前記光遮断層と重畳するソース領域、及び前記チャネル領域の他側部に延長され前記光遮断層と重畳しないドレイン領域を備えた半導体層と、
をさらに含み、
前記第1ゲート電極は、ゲート絶縁膜を挟んで前記チャネル領域と重畳し、
前記ブースト容量は、前記光遮断層を第1容量電極とし、前記ソース領域を第2容量電極とし、前記第1容量電極と前記第2容量電極の間に配置された前記バッファ層を用いて形成される、請求項1に記載の平板表示装置。 - 前記第1ゲート電極を覆う中間絶縁膜をさらに含み、
前記第1ドレイン電極は、前記中間絶縁膜の上で、前記ドレイン領域と接続され、
前記第1ソース電極は、前記中間絶縁膜の上で、前記ソース領域と接続される、請求項2に記載の平板表示装置。 - 前記第1ゲート電極は、前記ゲート絶縁膜及び前記バッファ層を貫通するゲートコンタクトホールを介して前記光遮断層と接続される、請求項1に記載の平板表示装置。
- 前記非表示領域に配置され、第2ゲート電極、第2ソース電極、及び前記第1ソース電極に接続された第2ドレイン電極を備えたプルダウンTFTをさらに含む、請求項1に記載の平板表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160097463A KR102489594B1 (ko) | 2016-07-29 | 2016-07-29 | 협 베젤을 갖는 표시장치 |
KR10-2016-0097463 | 2016-07-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019084064A Division JP2019191583A (ja) | 2016-07-29 | 2019-04-25 | 狭ベゼル平板表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018018082A true JP2018018082A (ja) | 2018-02-01 |
JP6763836B2 JP6763836B2 (ja) | 2020-09-30 |
Family
ID=59655868
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017145267A Active JP6763836B2 (ja) | 2016-07-29 | 2017-07-27 | 狭ベゼル平板表示装置 |
JP2019084064A Withdrawn JP2019191583A (ja) | 2016-07-29 | 2019-04-25 | 狭ベゼル平板表示装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019084064A Withdrawn JP2019191583A (ja) | 2016-07-29 | 2019-04-25 | 狭ベゼル平板表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10274796B2 (ja) |
EP (1) | EP3276410B1 (ja) |
JP (2) | JP6763836B2 (ja) |
KR (1) | KR102489594B1 (ja) |
CN (1) | CN107665659B (ja) |
TW (1) | TWI640815B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11869411B2 (en) | 2019-12-20 | 2024-01-09 | Hefei Boe Joint Technology Co., Ltd. | Display substrate, manufacturing method thereof, and display device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200013923A (ko) * | 2018-07-31 | 2020-02-10 | 엘지디스플레이 주식회사 | 게이트 구동부 및 이를 이용한 전계발광 표시장치 |
KR20200102607A (ko) * | 2019-02-21 | 2020-09-01 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN110010078B (zh) * | 2019-03-14 | 2022-02-08 | 合肥京东方卓印科技有限公司 | 移位寄存器单元、栅极驱动电路和显示装置 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001343668A (ja) * | 2000-05-30 | 2001-12-14 | Toshiba Corp | 表示装置用電極基板 |
JP2002149087A (ja) * | 2000-08-04 | 2002-05-22 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2002198537A (ja) * | 2000-09-29 | 2002-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2003315817A (ja) * | 2002-04-24 | 2003-11-06 | Sanyo Electric Co Ltd | 表示装置 |
JP2005141264A (ja) * | 2001-10-04 | 2005-06-02 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2007188936A (ja) * | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | 表示装置 |
JP2008165029A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置 |
JP2011242786A (ja) * | 2011-06-27 | 2011-12-01 | Semiconductor Energy Lab Co Ltd | 表示装置及びプロジェクター |
JP2015161945A (ja) * | 2014-02-25 | 2015-09-07 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
JP2015191105A (ja) * | 2014-03-28 | 2015-11-02 | Nltテクノロジー株式会社 | 液晶表示装置 |
KR20160009220A (ko) * | 2014-07-15 | 2016-01-26 | 엘지디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 이를 구비한 표시장치용 어레이 기판 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320204B1 (en) | 1997-12-25 | 2001-11-20 | Seiko Epson Corporation | Electro-optical device in which an extending portion of a channel region of a semiconductor layer is connected to a capacitor line and an electronic apparatus including the electro-optical device |
TW575777B (en) | 2001-03-30 | 2004-02-11 | Sanyo Electric Co | Active matrix type display device |
TW543145B (en) * | 2001-10-11 | 2003-07-21 | Samsung Electronics Co Ltd | A thin film transistor array panel and a method of the same |
JP4285551B2 (ja) | 2007-02-19 | 2009-06-24 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
KR101329791B1 (ko) * | 2007-07-16 | 2013-11-15 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
JP4835626B2 (ja) * | 2008-04-03 | 2011-12-14 | ソニー株式会社 | シフトレジスタ回路、表示パネル及び電子機器 |
KR101515382B1 (ko) * | 2008-08-26 | 2015-04-27 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 |
KR20130139474A (ko) * | 2012-06-13 | 2013-12-23 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 액정 표시 장치의 제조 방법 |
KR102167140B1 (ko) * | 2014-07-01 | 2020-10-20 | 엘지디스플레이 주식회사 | 네로우 베젤을 갖는 표시장치 |
KR101679252B1 (ko) * | 2014-09-30 | 2016-12-07 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 디스플레이 장치 |
JP6403000B2 (ja) | 2014-11-10 | 2018-10-10 | セイコーエプソン株式会社 | 電気光学装置、電子機器、及び電気光学装置の製造方法 |
-
2016
- 2016-07-29 KR KR1020160097463A patent/KR102489594B1/ko active IP Right Grant
-
2017
- 2017-07-26 US US15/659,898 patent/US10274796B2/en active Active
- 2017-07-27 JP JP2017145267A patent/JP6763836B2/ja active Active
- 2017-07-27 CN CN201710623470.7A patent/CN107665659B/zh active Active
- 2017-07-28 TW TW106125384A patent/TWI640815B/zh active
- 2017-07-28 EP EP17183852.7A patent/EP3276410B1/en active Active
-
2019
- 2019-04-25 JP JP2019084064A patent/JP2019191583A/ja not_active Withdrawn
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001343668A (ja) * | 2000-05-30 | 2001-12-14 | Toshiba Corp | 表示装置用電極基板 |
JP2002149087A (ja) * | 2000-08-04 | 2002-05-22 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP2002198537A (ja) * | 2000-09-29 | 2002-07-12 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
JP2005141264A (ja) * | 2001-10-04 | 2005-06-02 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2003315817A (ja) * | 2002-04-24 | 2003-11-06 | Sanyo Electric Co Ltd | 表示装置 |
JP2007188936A (ja) * | 2006-01-11 | 2007-07-26 | Epson Imaging Devices Corp | 表示装置 |
JP2008165029A (ja) * | 2006-12-28 | 2008-07-17 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置 |
JP2011242786A (ja) * | 2011-06-27 | 2011-12-01 | Semiconductor Energy Lab Co Ltd | 表示装置及びプロジェクター |
JP2015161945A (ja) * | 2014-02-25 | 2015-09-07 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 表示装置 |
JP2015191105A (ja) * | 2014-03-28 | 2015-11-02 | Nltテクノロジー株式会社 | 液晶表示装置 |
KR20160009220A (ko) * | 2014-07-15 | 2016-01-26 | 엘지디스플레이 주식회사 | 산화물 반도체 박막 트랜지스터 및 이를 구비한 표시장치용 어레이 기판 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11869411B2 (en) | 2019-12-20 | 2024-01-09 | Hefei Boe Joint Technology Co., Ltd. | Display substrate, manufacturing method thereof, and display device |
JP7416364B2 (ja) | 2019-12-20 | 2024-01-17 | 京東方科技集團股▲ふん▼有限公司 | 表示基板及びその製作方法並びに表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US10274796B2 (en) | 2019-04-30 |
CN107665659A (zh) | 2018-02-06 |
US20180031894A1 (en) | 2018-02-01 |
KR102489594B1 (ko) | 2023-01-18 |
JP6763836B2 (ja) | 2020-09-30 |
EP3276410B1 (en) | 2020-06-17 |
CN107665659B (zh) | 2020-08-28 |
JP2019191583A (ja) | 2019-10-31 |
TWI640815B (zh) | 2018-11-11 |
TW201804219A (zh) | 2018-02-01 |
EP3276410A1 (en) | 2018-01-31 |
KR20180014382A (ko) | 2018-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6632516B2 (ja) | ディスプレイ装置 | |
US8842061B2 (en) | Shifting register and apparatus for driving gate lines | |
KR102167140B1 (ko) | 네로우 베젤을 갖는 표시장치 | |
JP2019191583A (ja) | 狭ベゼル平板表示装置 | |
US9406272B2 (en) | Gate driving circuit having forward and reverse scan directions and display apparatus implementing the gate driving circuit | |
US20180138256A1 (en) | Display Panel and Organic Light-Emitting Diode Display Device Using the Same | |
CN106991948B (zh) | 栅极驱动电路 | |
EP3678124A1 (en) | Shift register unit, driving apparatus, display apparatus, and driving method | |
CN108010494B (zh) | 栅极驱动器和使用该栅极驱动器的显示装置 | |
KR102004912B1 (ko) | 쉬프트 레지스터 및 이를 포함하는 평판 표시 장치 | |
US9571089B2 (en) | Built-in gate driver | |
KR102118153B1 (ko) | 네로우 베젤을 갖는 표시장치 | |
KR101749755B1 (ko) | 게이트 쉬프트 레지스터와 이를 이용한 표시장치 | |
JP2002072233A (ja) | 液晶表示装置および携帯端末 | |
KR20200068509A (ko) | 표시 장치 | |
KR102455584B1 (ko) | Oled 표시패널과 이를 이용한 oled 표시 장치 | |
KR20170124425A (ko) | 게이트 구동회로와 이를 이용한 표시장치 | |
KR102496175B1 (ko) | 표시 장치 및 그 구동방법 | |
KR101696479B1 (ko) | 표시장치와 그 정전기 및 노이즈 차단 방법 | |
KR20140131448A (ko) | 스캔 구동부 및 이를 이용한 표시장치 | |
KR102156782B1 (ko) | 네로우 베젤을 갖는 표시장치 | |
KR20190036447A (ko) | 표시패널과 이를 이용한 oled 표시 장치 | |
KR102520698B1 (ko) | Oled 표시패널 | |
KR20200068508A (ko) | 표시 장치 및 데이터 출력 회로 | |
KR20200082972A (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170727 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180531 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180831 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20190110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190425 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20190510 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20190607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200512 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200910 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6763836 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |