JP2017512379A5 - - Google Patents

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Publication number
JP2017512379A5
JP2017512379A5 JP2016552263A JP2016552263A JP2017512379A5 JP 2017512379 A5 JP2017512379 A5 JP 2017512379A5 JP 2016552263 A JP2016552263 A JP 2016552263A JP 2016552263 A JP2016552263 A JP 2016552263A JP 2017512379 A5 JP2017512379 A5 JP 2017512379A5
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JP
Japan
Prior art keywords
cooling
substrate
assembly
coupled
flow
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JP2016552263A
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English (en)
Japanese (ja)
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JP2017512379A (ja
JP6484642B2 (ja
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Priority claimed from PCT/US2015/011203 external-priority patent/WO2015122979A1/en
Publication of JP2017512379A publication Critical patent/JP2017512379A/ja
Publication of JP2017512379A5 publication Critical patent/JP2017512379A5/ja
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JP2016552263A 2014-02-14 2015-01-13 安定化された高温堆積のためのガス冷却式基板支持体 Active JP6484642B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461940215P 2014-02-14 2014-02-14
US61/940,215 2014-02-14
US201461943595P 2014-02-24 2014-02-24
US61/943,595 2014-02-24
PCT/US2015/011203 WO2015122979A1 (en) 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition

Publications (3)

Publication Number Publication Date
JP2017512379A JP2017512379A (ja) 2017-05-18
JP2017512379A5 true JP2017512379A5 (enExample) 2018-03-01
JP6484642B2 JP6484642B2 (ja) 2019-03-13

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ID=53797579

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JP2016552263A Active JP6484642B2 (ja) 2014-02-14 2015-01-13 安定化された高温堆積のためのガス冷却式基板支持体

Country Status (9)

Country Link
US (2) US9790589B2 (enExample)
EP (1) EP3105778B1 (enExample)
JP (1) JP6484642B2 (enExample)
KR (2) KR102299392B1 (enExample)
CN (1) CN105993062B (enExample)
IL (1) IL247032B (enExample)
SG (1) SG11201606361QA (enExample)
TW (1) TWI662596B (enExample)
WO (1) WO2015122979A1 (enExample)

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JP6918554B2 (ja) * 2017-04-06 2021-08-11 東京エレクトロン株式会社 可動体構造及び成膜装置
US11328929B2 (en) * 2018-05-01 2022-05-10 Applied Materials, Inc. Methods, apparatuses and systems for substrate processing for lowering contact resistance
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
US20210381101A1 (en) * 2020-06-03 2021-12-09 Applied Materials, Inc. Substrate processing system
JP7592410B2 (ja) * 2020-06-15 2024-12-02 東京エレクトロン株式会社 載置台及び基板処理装置
KR102424374B1 (ko) * 2020-06-17 2022-07-22 조중래 반도체 소자의 제조 방법 및 제조 장치
TWI888578B (zh) * 2020-06-23 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座及反應腔室
CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11699571B2 (en) * 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US20220127723A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. High heat loss heater and electrostatic chuck for semiconductor processing
CN112663014A (zh) * 2021-01-05 2021-04-16 德润特数字影像科技（北京）有限公司 一种镀膜基板的均匀控温装置及方法
US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
KR20220101566A (ko) * 2021-01-11 2022-07-19 에이에스엠 아이피 홀딩 비.브이. 정전기 척
CN114959620A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 薄膜沉积设备及其晶圆承载盘
US12091752B2 (en) * 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
KR102685208B1 (ko) 2021-04-21 2024-07-16 주식회사 피브이티 마그네트론 스퍼터링 장치
KR20240023670A (ko) * 2021-07-02 2024-02-22 어플라이드 머티어리얼스, 인코포레이티드 고전력 rf 애플리케이션들을 위한 고온 서셉터
JP7317083B2 (ja) * 2021-09-01 2023-07-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
US20240312770A1 (en) * 2023-03-16 2024-09-19 Applied Materials, Inc. Apparatus and methods for controlling substrate temperature during processing
CN121058082A (zh) * 2023-05-05 2025-12-02 朗姆研究公司 基座支柱冷却系统
KR102627143B1 (ko) * 2023-07-20 2024-01-23 (주)효진이앤하이 플라즈마 반응기용 온도 조절 시스템

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