SG11201606361QA - Gas cooled substrate support for stabilized high temperature deposition - Google Patents
Gas cooled substrate support for stabilized high temperature depositionInfo
- Publication number
- SG11201606361QA SG11201606361QA SG11201606361QA SG11201606361QA SG11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA SG 11201606361Q A SG11201606361Q A SG 11201606361QA
- Authority
- SG
- Singapore
- Prior art keywords
- high temperature
- substrate support
- gas cooled
- temperature deposition
- cooled substrate
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Drying Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461940215P | 2014-02-14 | 2014-02-14 | |
| US201461943595P | 2014-02-24 | 2014-02-24 | |
| PCT/US2015/011203 WO2015122979A1 (en) | 2014-02-14 | 2015-01-13 | Gas cooled substrate support for stabilized high temperature deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201606361QA true SG11201606361QA (en) | 2016-09-29 |
Family
ID=53797579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201606361QA SG11201606361QA (en) | 2014-02-14 | 2015-01-13 | Gas cooled substrate support for stabilized high temperature deposition |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US9790589B2 (en) |
| EP (1) | EP3105778B1 (en) |
| JP (1) | JP6484642B2 (en) |
| KR (2) | KR102397854B1 (en) |
| CN (1) | CN105993062B (en) |
| IL (1) | IL247032B (en) |
| SG (1) | SG11201606361QA (en) |
| TW (1) | TWI662596B (en) |
| WO (1) | WO2015122979A1 (en) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102397854B1 (en) * | 2014-02-14 | 2022-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas cooled substrate support for stabilized high temperature deposition |
| US10662529B2 (en) * | 2016-01-05 | 2020-05-26 | Applied Materials, Inc. | Cooled gas feed block with baffle and nozzle for HDP-CVD |
| US9892956B1 (en) * | 2016-10-12 | 2018-02-13 | Lam Research Corporation | Wafer positioning pedestal for semiconductor processing |
| JP6918554B2 (en) | 2017-04-06 | 2021-08-11 | 東京エレクトロン株式会社 | Movable body structure and film forming equipment |
| US11373890B2 (en) * | 2018-12-17 | 2022-06-28 | Applied Materials, Inc. | Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing |
| CN113053715B (en) * | 2019-12-27 | 2023-03-31 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| US20210381101A1 (en) * | 2020-06-03 | 2021-12-09 | Applied Materials, Inc. | Substrate processing system |
| JP2021197457A (en) * | 2020-06-15 | 2021-12-27 | 東京エレクトロン株式会社 | Placing table and substrate processing device |
| KR102424374B1 (en) * | 2020-06-17 | 2022-07-22 | 조중래 | Method and apparatus for fabricating semiconductor device |
| CN111850501B (en) * | 2020-07-20 | 2022-09-27 | 江苏集萃有机光电技术研究所有限公司 | Substrate frame structure and vacuum evaporation device |
| US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US20220127723A1 (en) * | 2020-10-23 | 2022-04-28 | Applied Materials, Inc. | High heat loss heater and electrostatic chuck for semiconductor processing |
| CN112663014A (en) * | 2021-01-05 | 2021-04-16 | 德润特数字影像科技（北京）有限公司 | Uniform temperature control device and method for coated substrate |
| US11598006B2 (en) * | 2021-01-08 | 2023-03-07 | Sky Tech Inc. | Wafer support and thin-film deposition apparatus using the same |
| TW202232656A (en) * | 2021-01-11 | 2022-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Electrostatic chuck, and method of forming electrostatic chuck |
| CN114959620A (en) * | 2021-02-26 | 2022-08-30 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment and wafer bearing disc thereof |
| US12091752B2 (en) * | 2021-03-18 | 2024-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of manufacturing interconnect structures |
| KR20240023670A (en) * | 2021-07-02 | 2024-02-22 | 어플라이드 머티어리얼스, 인코포레이티드 | High temperature susceptor for high power RF applications |
| JP7317083B2 (en) * | 2021-09-01 | 2023-07-28 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, substrate processing apparatus, program, and substrate processing method |
| CN115305452B (en) * | 2022-07-06 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| KR102627143B1 (en) * | 2023-07-20 | 2024-01-23 | (주)효진이앤하이 | Temperature control system for plasma reactor |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4190016A (en) * | 1979-03-13 | 1980-02-26 | The United States Of America As Represented By The United States Department Of Energy | Cryogenic target formation using cold gas jets |
| JPH05163096A (en) * | 1991-12-11 | 1993-06-29 | Applied Materials Japan Kk | Temperature control system for low-temperature of electrode in vacuum device using refrigerator in apparatus for producing semiconductor |
| JPH09157846A (en) * | 1995-12-01 | 1997-06-17 | Teisan Kk | Temperature controller |
| JP2951903B2 (en) * | 1997-01-09 | 1999-09-20 | 株式会社日立製作所 | Processing equipment |
| JP3934246B2 (en) * | 1997-10-27 | 2007-06-20 | 大日本スクリーン製造株式会社 | Substrate cooling device and substrate cooling method |
| US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
| US6811651B2 (en) | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
| US20050028436A1 (en) * | 2003-07-09 | 2005-02-10 | Viking Industrial Products, Inc. | Fluid mixing method and apparatus |
| US7429718B2 (en) | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
| US7259102B2 (en) * | 2005-09-30 | 2007-08-21 | Molecular Imprints, Inc. | Etching technique to planarize a multi-layer structure |
| US8343280B2 (en) * | 2006-03-28 | 2013-01-01 | Tokyo Electron Limited | Multi-zone substrate temperature control system and method of operating |
| US20080035306A1 (en) * | 2006-08-08 | 2008-02-14 | White John M | Heating and cooling of substrate support |
| KR100746231B1 (en) * | 2006-08-18 | 2007-08-03 | 삼성전자주식회사 | Cooling apparatus having auxiliary chiller and semiconductor fabricating method using the same |
| US20100243437A1 (en) * | 2009-03-25 | 2010-09-30 | Alliance For Sustainable Energy, Llc | Research-scale, cadmium telluride (cdte) device development platform |
| JP5195711B2 (en) | 2009-10-13 | 2013-05-15 | 東京エレクトロン株式会社 | Substrate cooling device, substrate cooling method, and storage medium |
| CN103155718B (en) * | 2010-09-06 | 2016-09-28 | Emd株式会社 | Plasma treatment appts |
| CN108359957A (en) * | 2010-10-29 | 2018-08-03 | 应用材料公司 | Deposition ring and electrostatic chuck for physical vapor deposition chamber |
| EP2649218B1 (en) * | 2010-12-08 | 2017-08-23 | Evatec AG | Apparatus and method for depositing a layer onto a substrate |
| TWI534341B (en) * | 2011-09-26 | 2016-05-21 | Hitachi Int Electric Inc | A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium |
| KR102397854B1 (en) * | 2014-02-14 | 2022-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Gas cooled substrate support for stabilized high temperature deposition |
-
2015
- 2015-01-13 KR KR1020217028046A patent/KR102397854B1/en active IP Right Grant
- 2015-01-13 IL IL247032A patent/IL247032B/en unknown
- 2015-01-13 EP EP15748638.2A patent/EP3105778B1/en active Active
- 2015-01-13 SG SG11201606361QA patent/SG11201606361QA/en unknown
- 2015-01-13 WO PCT/US2015/011203 patent/WO2015122979A1/en active Application Filing
- 2015-01-13 KR KR1020167025401A patent/KR102299392B1/en active IP Right Grant
- 2015-01-13 JP JP2016552263A patent/JP6484642B2/en active Active
- 2015-01-13 CN CN201580007946.3A patent/CN105993062B/en active Active
- 2015-01-28 US US14/607,359 patent/US9790589B2/en active Active
- 2015-02-09 TW TW104104251A patent/TWI662596B/en active
-
2017
- 2017-10-16 US US15/784,972 patent/US10344375B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6484642B2 (en) | 2019-03-13 |
| TWI662596B (en) | 2019-06-11 |
| CN105993062B (en) | 2020-08-11 |
| EP3105778A4 (en) | 2017-11-01 |
| KR20210110416A (en) | 2021-09-07 |
| JP2017512379A (en) | 2017-05-18 |
| IL247032A0 (en) | 2016-09-29 |
| US10344375B2 (en) | 2019-07-09 |
| US9790589B2 (en) | 2017-10-17 |
| KR102299392B1 (en) | 2021-09-06 |
| KR102397854B1 (en) | 2022-05-12 |
| EP3105778A1 (en) | 2016-12-21 |
| KR20160120339A (en) | 2016-10-17 |
| US20150232983A1 (en) | 2015-08-20 |
| WO2015122979A1 (en) | 2015-08-20 |
| TW201532126A (en) | 2015-08-16 |
| US20180037987A1 (en) | 2018-02-08 |
| EP3105778B1 (en) | 2019-07-03 |
| IL247032B (en) | 2022-07-01 |
| CN105993062A (en) | 2016-10-05 |
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