SG11201609745RA - Cooling pedestal for dicing tape thermal management during plasma dicing - Google Patents

Cooling pedestal for dicing tape thermal management during plasma dicing

Info

Publication number
SG11201609745RA
SG11201609745RA SG11201609745RA SG11201609745RA SG11201609745RA SG 11201609745R A SG11201609745R A SG 11201609745RA SG 11201609745R A SG11201609745R A SG 11201609745RA SG 11201609745R A SG11201609745R A SG 11201609745RA SG 11201609745R A SG11201609745R A SG 11201609745RA
Authority
SG
Singapore
Prior art keywords
dicing
thermal management
during plasma
management during
cooling pedestal
Prior art date
Application number
SG11201609745RA
Inventor
Roy C Nangoy
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201609745RA publication Critical patent/SG11201609745RA/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
SG11201609745RA 2014-05-23 2015-05-13 Cooling pedestal for dicing tape thermal management during plasma dicing SG11201609745RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/286,424 US9034771B1 (en) 2014-05-23 2014-05-23 Cooling pedestal for dicing tape thermal management during plasma dicing
PCT/US2015/030613 WO2015179192A1 (en) 2014-05-23 2015-05-13 Cooling pedestal for dicing tape thermal management during plasma dicing

Publications (1)

Publication Number Publication Date
SG11201609745RA true SG11201609745RA (en) 2016-12-29

Family

ID=53054603

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SG11201609745RA SG11201609745RA (en) 2014-05-23 2015-05-13 Cooling pedestal for dicing tape thermal management during plasma dicing

Country Status (7)

Country Link
US (1) US9034771B1 (en)
JP (2) JP6602850B2 (en)
KR (2) KR102435723B1 (en)
CN (1) CN106463392B (en)
SG (1) SG11201609745RA (en)
TW (1) TWI662609B (en)
WO (1) WO2015179192A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5962921B2 (en) * 2013-05-09 2016-08-03 パナソニックIpマネジメント株式会社 Plasma processing apparatus and plasma processing method
US9236284B2 (en) * 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
US11195756B2 (en) * 2014-09-19 2021-12-07 Applied Materials, Inc. Proximity contact cover ring for plasma dicing
US10692765B2 (en) * 2014-11-07 2020-06-23 Applied Materials, Inc. Transfer arm for film frame substrate handling during plasma singulation of wafers
JP6655310B2 (en) 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ Plasma processing equipment
GB201518756D0 (en) * 2015-10-22 2015-12-09 Spts Technologies Ltd Apparatus for plasma dicing
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) * 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
JP6394641B2 (en) * 2016-04-25 2018-09-26 トヨタ自動車株式会社 Plasma device
GB201611652D0 (en) * 2016-07-04 2016-08-17 Spts Technologies Ltd Method of detecting a condition
JP6818351B2 (en) * 2017-04-14 2021-01-20 サムコ株式会社 Wafer processing equipment
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
US11164759B2 (en) 2018-05-10 2021-11-02 Micron Technology, Inc. Tools and systems for processing one or more semiconductor devices, and related methods
US11562890B2 (en) * 2018-12-06 2023-01-24 Applied Materials, Inc. Corrosion resistant ground shield of processing chamber
WO2021059900A1 (en) * 2019-09-27 2021-04-01 パナソニックIpマネジメント株式会社 Dicing system and dicing method
US11600492B2 (en) * 2019-12-10 2023-03-07 Applied Materials, Inc. Electrostatic chuck with reduced current leakage for hybrid laser scribing and plasma etch wafer singulation process
US11791192B2 (en) * 2020-01-19 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Workpiece holder, wafer chuck, wafer holding method
US20220108908A1 (en) * 2020-10-06 2022-04-07 Applied Materials, Inc. Shadow ring kit for plasma etch wafer singulation process

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4049944A (en) 1973-02-28 1977-09-20 Hughes Aircraft Company Process for fabricating small geometry semiconductive devices including integrated components
US4339528A (en) 1981-05-19 1982-07-13 Rca Corporation Etching method using a hardened PVA stencil
US4684437A (en) 1985-10-31 1987-08-04 International Business Machines Corporation Selective metal etching in metal/polymer structures
KR100215338B1 (en) 1991-03-06 1999-08-16 가나이 쓰도무 Method of manufacturing semiconductor device
DE69427882T2 (en) 1993-02-01 2002-04-11 Canon Kk liquid-crystal display
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
JPH09216085A (en) 1996-02-07 1997-08-19 Canon Inc Method and equipment for cutting substrate
ATE251341T1 (en) 1996-08-01 2003-10-15 Surface Technology Systems Plc METHOD FOR ETCHING SUBSTRATES
US6426484B1 (en) 1996-09-10 2002-07-30 Micron Technology, Inc. Circuit and method for heating an adhesive to package or rework a semiconductor die
US5920973A (en) 1997-03-09 1999-07-13 Electro Scientific Industries, Inc. Hole forming system with multiple spindles per station
JP3230572B2 (en) 1997-05-19 2001-11-19 日亜化学工業株式会社 Method for manufacturing nitride compound semiconductor device and semiconductor light emitting device
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
JP2001044144A (en) 1999-08-03 2001-02-16 Tokyo Seimitsu Co Ltd Semiconductor chip manufacturing process
JP2001110811A (en) 1999-10-08 2001-04-20 Oki Electric Ind Co Ltd Manufacturing method of semiconductor device
JP4387007B2 (en) 1999-10-26 2009-12-16 株式会社ディスコ Method for dividing semiconductor wafer
JP2001144126A (en) 1999-11-12 2001-05-25 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method
JP2001148358A (en) 1999-11-19 2001-05-29 Disco Abrasive Syst Ltd Semiconductor wafer and deviding method thereof
US6300593B1 (en) 1999-12-07 2001-10-09 First Solar, Llc Apparatus and method for laser scribing a coated substrate
US6887804B2 (en) 2000-01-10 2005-05-03 Electro Scientific Industries, Inc. Passivation processing over a memory link
US6574250B2 (en) 2000-01-10 2003-06-03 Electro Scientific Industries, Inc. Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
AU2001251172A1 (en) 2000-03-30 2001-10-15 Electro Scientific Industries, Inc. Laser system and method for single pass micromachining of multilayer workpieces
US6593542B2 (en) 2000-07-12 2003-07-15 Electro Scientific Industries, Inc. UV laser system and method for single pulse severing of IC fuses
US6676878B2 (en) 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6759275B1 (en) 2001-09-04 2004-07-06 Megic Corporation Method for making high-performance RF integrated circuits
US6642127B2 (en) 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
JP3910843B2 (en) 2001-12-13 2007-04-25 東京エレクトロン株式会社 Semiconductor element separation method and semiconductor element separation apparatus
US6706998B2 (en) 2002-01-11 2004-03-16 Electro Scientific Industries, Inc. Simulated laser spot enlargement
KR100451950B1 (en) 2002-02-25 2004-10-08 삼성전자주식회사 Sawing method for image sensor device wafer
WO2003071591A1 (en) 2002-02-25 2003-08-28 Disco Corporation Method for dividing semiconductor wafer
JP2003257896A (en) 2002-02-28 2003-09-12 Disco Abrasive Syst Ltd Method for dicing semiconductor wafer
ATE316691T1 (en) 2002-04-19 2006-02-15 Xsil Technology Ltd LASER TREATMENT
JP2004031526A (en) 2002-06-24 2004-01-29 Toyoda Gosei Co Ltd Manufacturing method of group iii nitride compound semiconductor element
US6582983B1 (en) 2002-07-12 2003-06-24 Keteca Singapore Singapore Method and wafer for maintaining ultra clean bonding pads on a wafer
JP4286497B2 (en) 2002-07-17 2009-07-01 新光電気工業株式会社 Manufacturing method of semiconductor device
JP3908148B2 (en) 2002-10-28 2007-04-25 シャープ株式会社 Multilayer semiconductor device
US20040157457A1 (en) 2003-02-12 2004-08-12 Songlin Xu Methods of using polymer films to form micro-structures
JP2004273895A (en) 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd Dividing method of semiconductor wafer
US7087452B2 (en) 2003-04-22 2006-08-08 Intel Corporation Edge arrangements for integrated circuit chips
JP2004322168A (en) 2003-04-25 2004-11-18 Disco Abrasive Syst Ltd Laser machining apparatus
JP4231349B2 (en) 2003-07-02 2009-02-25 株式会社ディスコ Laser processing method and laser processing apparatus
JP4408361B2 (en) 2003-09-26 2010-02-03 株式会社ディスコ Wafer division method
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
JP4471632B2 (en) 2003-11-18 2010-06-02 株式会社ディスコ Wafer processing method
JP2005203541A (en) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd Laser-processing method for wafer
US7459377B2 (en) 2004-06-08 2008-12-02 Panasonic Corporation Method for dividing substrate
US7804043B2 (en) 2004-06-15 2010-09-28 Laserfacturing Inc. Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser
US7687740B2 (en) 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7507638B2 (en) 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP4018088B2 (en) 2004-08-02 2007-12-05 松下電器産業株式会社 Semiconductor wafer dividing method and semiconductor element manufacturing method
US7199050B2 (en) 2004-08-24 2007-04-03 Micron Technology, Inc. Pass through via technology for use during the manufacture of a semiconductor device
JP4018096B2 (en) 2004-10-05 2007-12-05 松下電器産業株式会社 Semiconductor wafer dividing method and semiconductor element manufacturing method
US20060088984A1 (en) 2004-10-21 2006-04-27 Intel Corporation Laser ablation method
US20060086898A1 (en) 2004-10-26 2006-04-27 Matsushita Electric Industrial Co., Ltd. Method and apparatus of making highly repetitive micro-pattern using laser writer
US20060146910A1 (en) 2004-11-23 2006-07-06 Manoochehr Koochesfahani Method and apparatus for simultaneous velocity and temperature measurements in fluid flow
JP4288229B2 (en) 2004-12-24 2009-07-01 パナソニック株式会社 Manufacturing method of semiconductor chip
US7875898B2 (en) 2005-01-24 2011-01-25 Panasonic Corporation Semiconductor device
JP2006253402A (en) 2005-03-10 2006-09-21 Nec Electronics Corp Manufacturing method of semiconductor device
US7361990B2 (en) 2005-03-17 2008-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking of high-lead or lead-free bumps by matching sizes of contact pads and bump pads
JP4478053B2 (en) 2005-03-29 2010-06-09 株式会社ディスコ Semiconductor wafer processing method
JP2006300036A (en) * 2005-04-25 2006-11-02 Toyota Motor Corp Knocking determining device of internal combustion engine
JP4285455B2 (en) 2005-07-11 2009-06-24 パナソニック株式会社 Manufacturing method of semiconductor chip
JP4599243B2 (en) 2005-07-12 2010-12-15 株式会社ディスコ Laser processing equipment
US20070044914A1 (en) * 2005-08-30 2007-03-01 Katsuji Matano Vacuum processing apparatus
JP4769560B2 (en) 2005-12-06 2011-09-07 株式会社ディスコ Wafer division method
JP4942471B2 (en) * 2005-12-22 2012-05-30 京セラ株式会社 Susceptor and wafer processing method using the same
JP4935143B2 (en) * 2006-03-29 2012-05-23 東京エレクトロン株式会社 Mounting table and vacuum processing apparatus
JP4372115B2 (en) 2006-05-12 2009-11-25 パナソニック株式会社 Semiconductor device manufacturing method and semiconductor module manufacturing method
JP4480728B2 (en) 2006-06-09 2010-06-16 パナソニック株式会社 Method for manufacturing MEMS microphone
JP4906425B2 (en) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ Plasma processing equipment
JP4544231B2 (en) * 2006-10-06 2010-09-15 パナソニック株式会社 Manufacturing method of semiconductor chip
JP4840174B2 (en) 2007-02-08 2011-12-21 パナソニック株式会社 Manufacturing method of semiconductor chip
JP4840200B2 (en) 2007-03-09 2011-12-21 パナソニック株式会社 Manufacturing method of semiconductor chip
JP5348848B2 (en) * 2007-03-28 2013-11-20 東京エレクトロン株式会社 Plasma processing equipment
US7926410B2 (en) 2007-05-01 2011-04-19 J.R. Automation Technologies, L.L.C. Hydraulic circuit for synchronized horizontal extension of cylinders
JP5205012B2 (en) 2007-08-29 2013-06-05 株式会社半導体エネルギー研究所 Display device and electronic apparatus including the display device
JP4858395B2 (en) * 2007-10-12 2012-01-18 パナソニック株式会社 Plasma processing equipment
US7859084B2 (en) 2008-02-28 2010-12-28 Panasonic Corporation Semiconductor substrate
JP2009260272A (en) * 2008-03-25 2009-11-05 Panasonic Corp Method of processing substrate, method of manufacturing semiconductor chip and method of manufacturing semiconductor chip with resin adhesion layer
CN101990480A (en) 2008-04-10 2011-03-23 应用材料股份有限公司 Laser-scribing platform and hybrid writing strategy
JP5325457B2 (en) * 2008-05-22 2013-10-23 株式会社日立ハイテクノロジーズ Plasma processing equipment
US20100013036A1 (en) 2008-07-16 2010-01-21 Carey James E Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process
CN102160155A (en) * 2008-09-22 2011-08-17 应用材料公司 Etch reactor suitable for etching high aspect ratio features
US8609512B2 (en) 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
US8642448B2 (en) 2010-06-22 2014-02-04 Applied Materials, Inc. Wafer dicing using femtosecond-based laser and plasma etch
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5528394B2 (en) * 2011-05-30 2014-06-25 パナソニック株式会社 Plasma processing apparatus, carrier carrier, and plasma processing method
US8557682B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-layer mask for substrate dicing by laser and plasma etch
US20140057414A1 (en) * 2012-08-27 2014-02-27 Aparna Iyer Mask residue removal for substrate dicing by laser and plasma etch

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CN106463392B (en) 2019-07-23
JP6602850B2 (en) 2019-11-06

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