JP2012231001A5 - - Google Patents

Download PDF

Info

Publication number
JP2012231001A5
JP2012231001A5 JP2011098103A JP2011098103A JP2012231001A5 JP 2012231001 A5 JP2012231001 A5 JP 2012231001A5 JP 2011098103 A JP2011098103 A JP 2011098103A JP 2011098103 A JP2011098103 A JP 2011098103A JP 2012231001 A5 JP2012231001 A5 JP 2012231001A5
Authority
JP
Japan
Prior art keywords
substrate
unit
substrate support
processing chamber
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011098103A
Other languages
English (en)
Japanese (ja)
Other versions
JP6012933B2 (ja
JP2012231001A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011098103A priority Critical patent/JP6012933B2/ja
Priority claimed from JP2011098103A external-priority patent/JP6012933B2/ja
Priority to KR1020120014624A priority patent/KR101331420B1/ko
Priority to US13/409,783 priority patent/US9236246B2/en
Publication of JP2012231001A publication Critical patent/JP2012231001A/ja
Publication of JP2012231001A5 publication Critical patent/JP2012231001A5/ja
Priority to US14/958,517 priority patent/US9472424B2/en
Application granted granted Critical
Publication of JP6012933B2 publication Critical patent/JP6012933B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011098103A 2011-03-04 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法 Active JP6012933B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011098103A JP6012933B2 (ja) 2011-04-26 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法
KR1020120014624A KR101331420B1 (ko) 2011-03-04 2012-02-14 기판 처리 장치 및 반도체 장치의 제조 방법
US13/409,783 US9236246B2 (en) 2011-03-04 2012-03-01 Substrate processing apparatus and a method of manufacturing a semiconductor device
US14/958,517 US9472424B2 (en) 2011-03-04 2015-12-03 Substrate processing apparatus and a method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011098103A JP6012933B2 (ja) 2011-04-26 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法

Publications (3)

Publication Number Publication Date
JP2012231001A JP2012231001A (ja) 2012-11-22
JP2012231001A5 true JP2012231001A5 (enExample) 2014-05-15
JP6012933B2 JP6012933B2 (ja) 2016-10-25

Family

ID=47432333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011098103A Active JP6012933B2 (ja) 2011-03-04 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法

Country Status (1)

Country Link
JP (1) JP6012933B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6820717B2 (ja) 2016-10-28 2021-01-27 株式会社日立ハイテク プラズマ処理装置
WO2020110192A1 (ja) * 2018-11-27 2020-06-04 株式会社日立ハイテクノロジーズ プラズマ処理装置及びそれを用いた試料の処理方法
JP7628600B2 (ja) 2021-03-26 2025-02-10 株式会社Kokusai Electric 処理装置、プログラム及び半導体装置の製造方法
KR20250124292A (ko) * 2024-02-05 2025-08-19 주식회사 히타치하이테크 플라스마 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124424A (ja) * 1986-11-13 1988-05-27 Fujitsu Ltd 試料の加熱方法
JPS6379636U (enExample) * 1986-11-13 1988-05-26
JP2889926B2 (ja) * 1989-10-20 1999-05-10 東京エレクトロン株式会社 基板の加熱処理方法及び加熱処理装置
JPH04307734A (ja) * 1991-04-04 1992-10-29 Japan Storage Battery Co Ltd アッシング装置
JP2005538566A (ja) * 2002-09-10 2005-12-15 アクセリス テクノロジーズ， インコーポレイテッド 温度固定されたチャックを用いた温度可変プロセスにおける基板の加熱方法
JP4861208B2 (ja) * 2006-01-31 2012-01-25 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5465828B2 (ja) * 2007-10-01 2014-04-09 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP2010161350A (ja) * 2008-12-09 2010-07-22 Hitachi Kokusai Electric Inc 基板処理方法

Similar Documents

Publication Publication Date Title
JP2016051864A5 (enExample)
JP2013084898A5 (ja) 半導体装置の製造方法、基板処理装置及びプログラム
JP2012104720A5 (enExample)
EP1944793A3 (en) Temperature measurement and control of wafer support in thermal processing chamber
WO2010126902A3 (en) Temperature control of chemical mechanical polishing
JP2011155137A5 (enExample)
JP2009170822A5 (enExample)
JP2016213456A5 (enExample)
JP2010161350A5 (ja) 半導体装置の製造方法及び基板処理装置
JP2010034511A5 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置
JP2011168881A5 (enExample)
JP2011139068A5 (enExample)
JP2012212882A5 (enExample)
WO2011094142A3 (en) Apparatus for controlling temperature uniformity of a substrate
EP2355133A3 (en) Substrate heating apparatus, substrate heating method and substrate processing system
JP2011252221A5 (enExample)
JP2012231001A5 (enExample)
JP2013080907A5 (enExample)
WO2012058005A3 (en) Apparatus having improved substrate temperature uniformity using direct heating methods
JP2011029603A5 (enExample)
JP2013098271A5 (enExample)
JP2013102041A5 (enExample)
JP2012084574A5 (enExample)
JP2010219308A5 (ja) 半導体装置の製造方法、基板処理方法及び基板処理装置
JP2009141043A5 (enExample)