JP2012231001A5 - - Google Patents

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JP2012231001A5
JP2012231001A5 JP2011098103A JP2011098103A JP2012231001A5 JP 2012231001 A5 JP2012231001 A5 JP 2012231001A5 JP 2011098103 A JP2011098103 A JP 2011098103A JP 2011098103 A JP2011098103 A JP 2011098103A JP 2012231001 A5 JP2012231001 A5 JP 2012231001A5
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Prior art keywords
substrate
unit
substrate support
processing chamber
heating
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JP2011098103A
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Japanese (ja)
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JP6012933B2 (en
JP2012231001A (en
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Priority to JP2011098103A priority Critical patent/JP6012933B2/en
Priority claimed from JP2011098103A external-priority patent/JP6012933B2/en
Priority to KR1020120014624A priority patent/KR101331420B1/en
Priority to US13/409,783 priority patent/US9236246B2/en
Publication of JP2012231001A publication Critical patent/JP2012231001A/en
Publication of JP2012231001A5 publication Critical patent/JP2012231001A5/ja
Priority to US14/958,517 priority patent/US9472424B2/en
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Claims (8)

基板を処理する処理室と、
前記処理室内に搬入された前記基板を一時的に支持する第１基板支持部と、
前記処理室内に設けられ、前記第１基板支持部から前記基板が移載される第２基板支持部と、
前記処理室内に搬入された前記基板を加熱する加熱部と、
前記第２基板支持部の上方に、前記処理室内に搬入された前記基板を前記第１基板支持部により前記第２基板支持部から離して支持させるステップと、
前記加熱部により前記基板を昇温させるステップと、
所定時間経過した後に、前記第１基板支持部から前記第２基板支持部へと前記基板を移載させるステップと、
前記加熱部により前記基板を加熱させながら前記基板を処理させるステップと、を実行するように前記第１基板支持部および前記加熱部を制御する構成を有する制御部と、
を有する基板処理装置。 A processing chamber for processing the substrate;
A first substrate support part for temporarily supporting the substrate carried into the processing chamber;
A second substrate support unit provided in the processing chamber and to which the substrate is transferred from the first substrate support unit;
A heating section for heating the substrate carried into the processing chamber;
Supporting the substrate carried into the processing chamber away from the second substrate support unit by the first substrate support unit above the second substrate support unit;
Raising the temperature of the substrate by the heating unit;
Transferring the substrate from the first substrate support to the second substrate support after a predetermined time has elapsed;
A step of processing the substrate while heating the substrate by the heating unit, and a control unit configured to control the first substrate support unit and the heating unit,
A substrate processing apparatus. 前記第１基板支持部に支持させた前記基板と前記第２基板支持部との距離は、搬入時の前記基板の温度と前記加熱部により所定温度に加熱された前記第２基板維持部の温度との差に応じて調整されるように構成される請求項１に記載の基板処理装置。   The distance between the substrate supported by the first substrate support unit and the second substrate support unit is the temperature of the substrate at the time of loading and the temperature of the second substrate maintenance unit heated to a predetermined temperature by the heating unit. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is configured to be adjusted according to a difference between the two. 前記処理室内にガスを供給するガス供給部を有し、
前記制御部は、
前記第１基板支持部に支持させた前記基板を昇温させる際、前記ガス供給部により前記処理室内に前記ガスを供給させ、前記処理室内の圧力を前記基板の搬入時の圧力より高めさせるよう、前記プラズマ生成部を制御する請求項１又は請求項２に記載の基板処理装置。 A gas supply unit for supplying gas into the processing chamber;
The controller is
When raising the temperature of the substrate supported by the first substrate support unit, the gas is supplied into the processing chamber by the gas supply unit so that the pressure in the processing chamber is higher than the pressure at the time of loading the substrate. The substrate processing apparatus according to claim 1, wherein the plasma generation unit is controlled. 前記加熱部は、
前記第１基板支持部の上方に設けられたランプ加熱装置を有し、
前記制御部は、
前記第１基板支持部に支持された前記基板を昇温させる際、前記ランプ加熱装置により前記基板を上方から加熱させるよう、前記ランプ加熱装置を制御する請求項１乃至請求項３のいずれか一項に記載された基板処理装置。 The heating unit is
A lamp heating device provided above the first substrate support;
The controller is
4. The lamp heating device is controlled such that when the temperature of the substrate supported by the first substrate support portion is raised, the lamp heating device heats the substrate from above. 5. The substrate processing apparatus described in the item. 基板を処理する処理室内に前記基板を搬入する工程と、
前記基板を一時的に支持する第１基板支持部により、前記処理室内に設けられた第２基板支持部の上方に、前記処理室内に搬入した前記基板を前記第２基板支持部から離して支持し、前記処理室内に搬入された前記基板を加熱する加熱部により前記基板を昇温する工程と、
所定時間経過した後に、前記第１基板支持部から前記第２基板支持部へと前記基板を移載する工程と、
前記加熱部により前記基板を加熱しながら前記基板を処理する工程と、
前記処理室内から前記基板を搬出する工程と、
を有する半導体装置の製造方法。 Carrying the substrate into a processing chamber for processing the substrate;
The first substrate support unit that temporarily supports the substrate is supported above the second substrate support unit provided in the processing chamber and separated from the second substrate support unit above the second substrate support unit. And heating the substrate by a heating unit that heats the substrate carried into the processing chamber;
Transferring the substrate from the first substrate support to the second substrate support after a predetermined time has elapsed;
Processing the substrate while heating the substrate by the heating unit;
Unloading the substrate from the processing chamber;
A method for manufacturing a semiconductor device comprising: 前記第１基板支持部が支持する前記基板と前記第２基板支持部との距離は、搬入時の前記基板の温度と前記加熱部により所定の温度に加熱された前記第２基板支持部の温度との差に応じて調整する請求項５に記載の半導体装置の製造方法。   The distance between the substrate supported by the first substrate support unit and the second substrate support unit is the temperature of the substrate at the time of loading and the temperature of the second substrate support unit heated to a predetermined temperature by the heating unit. The method of manufacturing a semiconductor device according to claim 5, wherein the semiconductor device is adjusted according to a difference between the semiconductor device and the semiconductor device. 前記第１基板支持部に支持した前記基板を昇温する工程では、
ガス供給部により前記処理室内にガスを供給し、前記処理室内の圧力を前記基板を搬入する工程における圧力より高める工程を有する請求項５又は請求項６に記載の半導体装置の製造方法。 In the step of raising the temperature of the substrate supported by the first substrate support part,
The method for manufacturing a semiconductor device according to claim 5, further comprising a step of supplying a gas into the processing chamber by a gas supply unit and increasing a pressure in the processing chamber to a pressure in a step of loading the substrate. 前記第１基板支持部に支持した前記基板を昇温する工程では、
ガス供給部により前記処理室内に水素含有ガスを供給し、前記加熱部が有するプラズマ生成部により前記水素含有ガスを励起する工程を有する請求項５乃至請求項７のいずれか一項に記載の半導体装置の製造方法。
In the step of raising the temperature of the substrate supported by the first substrate support part,
The semiconductor according to claim 5, further comprising a step of supplying a hydrogen-containing gas into the processing chamber by a gas supply unit and exciting the hydrogen-containing gas by a plasma generation unit included in the heating unit. Device manufacturing method.
JP2011098103A 2011-03-04 2011-04-26 Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method Active JP6012933B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011098103A JP6012933B2 (en) 2011-04-26 2011-04-26 Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method
KR1020120014624A KR101331420B1 (en) 2011-03-04 2012-02-14 Substrate processing apparatus and method of manufacturing semiconductor device
US13/409,783 US9236246B2 (en) 2011-03-04 2012-03-01 Substrate processing apparatus and a method of manufacturing a semiconductor device
US14/958,517 US9472424B2 (en) 2011-03-04 2015-12-03 Substrate processing apparatus and a method of manufacturing a semiconductor device

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JP2011098103A JP6012933B2 (en) 2011-04-26 2011-04-26 Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing method

Publications (3)

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JP2012231001A JP2012231001A (en) 2012-11-22
JP2012231001A5 true JP2012231001A5 (en) 2014-05-15
JP6012933B2 JP6012933B2 (en) 2016-10-25

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JP6820717B2 (en) 2016-10-28 2021-01-27 株式会社日立ハイテク Plasma processing equipment
CN111492466A (en) * 2018-11-27 2020-08-04 株式会社日立高新技术 Plasma processing apparatus and sample processing method using the same
WO2022201546A1 (en) 2021-03-26 2022-09-29 株式会社Kokusai Electric Processing device, program, and method for manufacturing semiconductor device

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JPS6379636U (en) * 1986-11-13 1988-05-26
JPS63124424A (en) * 1986-11-13 1988-05-27 Fujitsu Ltd Heating method for sample
JP2889926B2 (en) * 1989-10-20 1999-05-10 東京エレクトロン株式会社 Heat treatment method and heat treatment apparatus for substrate
JPH04307734A (en) * 1991-04-04 1992-10-29 Japan Storage Battery Co Ltd Ashing apparatus
CN100437894C (en) * 2002-09-10 2008-11-26 亚舍立技术有限公司 Method of heating a substrate in a variable temperature process using a fixed temperature chuck
JP4861208B2 (en) * 2006-01-31 2012-01-25 東京エレクトロン株式会社 Substrate mounting table and substrate processing apparatus
JP5465828B2 (en) * 2007-10-01 2014-04-09 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP2010161350A (en) * 2008-12-09 2010-07-22 Hitachi Kokusai Electric Inc Substrate treating method

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