JP6012933B2 - 基板処理装置、半導体装置の製造方法および基板処理方法 - Google Patents

基板処理装置、半導体装置の製造方法および基板処理方法 Download PDF

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JP6012933B2
JP6012933B2 JP2011098103A JP2011098103A JP6012933B2 JP 6012933 B2 JP6012933 B2 JP 6012933B2 JP 2011098103 A JP2011098103 A JP 2011098103A JP 2011098103 A JP2011098103 A JP 2011098103A JP 6012933 B2 JP6012933 B2 JP 6012933B2
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Prior art keywords
substrate
processing chamber
wafer
gas
substrate support
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JP2011098103A
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Japanese (ja)
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JP2012231001A5 (enExample
JP2012231001A (ja
Inventor
雅之 富田
雅之 富田
晃生 吉野
晃生 吉野
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Kokusai Denki Electric Inc
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Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
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Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2011098103A priority Critical patent/JP6012933B2/ja
Priority to KR1020120014624A priority patent/KR101331420B1/ko
Priority to US13/409,783 priority patent/US9236246B2/en
Publication of JP2012231001A publication Critical patent/JP2012231001A/ja
Publication of JP2012231001A5 publication Critical patent/JP2012231001A5/ja
Priority to US14/958,517 priority patent/US9472424B2/en
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JP2011098103A 2011-03-04 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法 Active JP6012933B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011098103A JP6012933B2 (ja) 2011-04-26 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法
KR1020120014624A KR101331420B1 (ko) 2011-03-04 2012-02-14 기판 처리 장치 및 반도체 장치의 제조 방법
US13/409,783 US9236246B2 (en) 2011-03-04 2012-03-01 Substrate processing apparatus and a method of manufacturing a semiconductor device
US14/958,517 US9472424B2 (en) 2011-03-04 2015-12-03 Substrate processing apparatus and a method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011098103A JP6012933B2 (ja) 2011-04-26 2011-04-26 基板処理装置、半導体装置の製造方法および基板処理方法

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JP2012231001A JP2012231001A (ja) 2012-11-22
JP2012231001A5 JP2012231001A5 (enExample) 2014-05-15
JP6012933B2 true JP6012933B2 (ja) 2016-10-25

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6820717B2 (ja) 2016-10-28 2021-01-27 株式会社日立ハイテク プラズマ処理装置
WO2020110192A1 (ja) * 2018-11-27 2020-06-04 株式会社日立ハイテクノロジーズ プラズマ処理装置及びそれを用いた試料の処理方法
JP7628600B2 (ja) 2021-03-26 2025-02-10 株式会社Kokusai Electric 処理装置、プログラム及び半導体装置の製造方法
KR20250124292A (ko) * 2024-02-05 2025-08-19 주식회사 히타치하이테크 플라스마 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124424A (ja) * 1986-11-13 1988-05-27 Fujitsu Ltd 試料の加熱方法
JPS6379636U (enExample) * 1986-11-13 1988-05-26
JP2889926B2 (ja) * 1989-10-20 1999-05-10 東京エレクトロン株式会社 基板の加熱処理方法及び加熱処理装置
JPH04307734A (ja) * 1991-04-04 1992-10-29 Japan Storage Battery Co Ltd アッシング装置
JP2005538566A (ja) * 2002-09-10 2005-12-15 アクセリス テクノロジーズ， インコーポレイテッド 温度固定されたチャックを用いた温度可変プロセスにおける基板の加熱方法
JP4861208B2 (ja) * 2006-01-31 2012-01-25 東京エレクトロン株式会社 基板載置台および基板処理装置
JP5465828B2 (ja) * 2007-10-01 2014-04-09 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP2010161350A (ja) * 2008-12-09 2010-07-22 Hitachi Kokusai Electric Inc 基板処理方法

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