JP6484642B2 - 安定化された高温堆積のためのガス冷却式基板支持体 - Google Patents

安定化された高温堆積のためのガス冷却式基板支持体 Download PDF

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Publication number
JP6484642B2
JP6484642B2 JP2016552263A JP2016552263A JP6484642B2 JP 6484642 B2 JP6484642 B2 JP 6484642B2 JP 2016552263 A JP2016552263 A JP 2016552263A JP 2016552263 A JP2016552263 A JP 2016552263A JP 6484642 B2 JP6484642 B2 JP 6484642B2
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cooling
substrate
assembly
gas
flow
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JP2017512379A (ja
JP2017512379A5 (enExample
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ブライアン ウェスト
ブライアン ウェスト
マイケル エス コックス
マイケル エス コックス
ジョンフン オー
ジョンフン オー
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
JP2016552263A 2014-02-14 2015-01-13 安定化された高温堆積のためのガス冷却式基板支持体 Active JP6484642B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461940215P 2014-02-14 2014-02-14
US61/940,215 2014-02-14
US201461943595P 2014-02-24 2014-02-24
US61/943,595 2014-02-24
PCT/US2015/011203 WO2015122979A1 (en) 2014-02-14 2015-01-13 Gas cooled substrate support for stabilized high temperature deposition

Publications (3)

Publication Number Publication Date
JP2017512379A JP2017512379A (ja) 2017-05-18
JP2017512379A5 JP2017512379A5 (enExample) 2018-03-01
JP6484642B2 true JP6484642B2 (ja) 2019-03-13

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JP2016552263A Active JP6484642B2 (ja) 2014-02-14 2015-01-13 安定化された高温堆積のためのガス冷却式基板支持体

Country Status (9)

Country Link
US (2) US9790589B2 (enExample)
EP (1) EP3105778B1 (enExample)
JP (1) JP6484642B2 (enExample)
KR (2) KR102299392B1 (enExample)
CN (1) CN105993062B (enExample)
IL (1) IL247032B (enExample)
SG (1) SG11201606361QA (enExample)
TW (1) TWI662596B (enExample)
WO (1) WO2015122979A1 (enExample)

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CN105993062B (zh) * 2014-02-14 2020-08-11 应用材料公司 用于稳定化高温沉积的气冷式基板支撑件
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US9892956B1 (en) * 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
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US11328929B2 (en) * 2018-05-01 2022-05-10 Applied Materials, Inc. Methods, apparatuses and systems for substrate processing for lowering contact resistance
US11373890B2 (en) * 2018-12-17 2022-06-28 Applied Materials, Inc. Wireless in-situ real-time measurement of electrostatic chucking force in semiconductor wafer processing
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
US20210381101A1 (en) * 2020-06-03 2021-12-09 Applied Materials, Inc. Substrate processing system
JP7592410B2 (ja) * 2020-06-15 2024-12-02 東京エレクトロン株式会社 載置台及び基板処理装置
KR102424374B1 (ko) * 2020-06-17 2022-07-22 조중래 반도체 소자의 제조 방법 및 제조 장치
TWI888578B (zh) * 2020-06-23 2025-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基座及反應腔室
CN111850501B (zh) * 2020-07-20 2022-09-27 江苏集萃有机光电技术研究所有限公司 一种基片架结构及真空蒸镀装置
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11699571B2 (en) * 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US20220127723A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. High heat loss heater and electrostatic chuck for semiconductor processing
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US11598006B2 (en) * 2021-01-08 2023-03-07 Sky Tech Inc. Wafer support and thin-film deposition apparatus using the same
KR20220101566A (ko) * 2021-01-11 2022-07-19 에이에스엠 아이피 홀딩 비.브이. 정전기 척
CN114959620A (zh) * 2021-02-26 2022-08-30 鑫天虹(厦门)科技有限公司 薄膜沉积设备及其晶圆承载盘
US12091752B2 (en) * 2021-03-18 2024-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing interconnect structures
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KR20240023670A (ko) * 2021-07-02 2024-02-22 어플라이드 머티어리얼스, 인코포레이티드 고전력 rf 애플리케이션들을 위한 고온 서셉터
JP7317083B2 (ja) * 2021-09-01 2023-07-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
CN115305452B (zh) * 2022-07-06 2023-09-08 北京北方华创微电子装备有限公司 反应腔室
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Also Published As

Publication number Publication date
JP2017512379A (ja) 2017-05-18
EP3105778B1 (en) 2019-07-03
US9790589B2 (en) 2017-10-17
SG11201606361QA (en) 2016-09-29
CN105993062A (zh) 2016-10-05
TW201532126A (zh) 2015-08-16
US20180037987A1 (en) 2018-02-08
EP3105778A4 (en) 2017-11-01
KR20160120339A (ko) 2016-10-17
US20150232983A1 (en) 2015-08-20
KR20210110416A (ko) 2021-09-07
CN105993062B (zh) 2020-08-11
KR102299392B1 (ko) 2021-09-06
IL247032A0 (en) 2016-09-29
WO2015122979A1 (en) 2015-08-20
US10344375B2 (en) 2019-07-09
KR102397854B1 (ko) 2022-05-12
EP3105778A1 (en) 2016-12-21
TWI662596B (zh) 2019-06-11
IL247032B (en) 2022-07-01

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